Abstract: Approaches to a suspension for a hard disk drive include having an adhered one or more piezo actuating device driven by a negative bias driving voltage. The negative bias driving voltage is lower than ground, therefore such voltage inhibits the migration of ions of an electrically conductive adhesive to an electrically conductive flexure layer, and inhibits the degradation of the resistance of an insulating material positioned between the conductive adhesive and the conductive flexure layer.

Abstract: The embodiments of the present invention generally relate to a method for forming a trench in which a write pole is deposited therein. The trench is formed with a single mask and multiple reactive ion etching (RIE) processes and has substantially straight side walls and a consistent bevel angle along the length of the write pole. The consistent bevel angle along the length of the write pole allows the bevel angle at the ABS to be consistent regardless of where the cut is when defining the ABS.

Abstract: A three-dimensional (3D) scalable magnetic memory array and a method for implementing the three-dimensional (3D) scalable magnetic memory array for use in Solid-State Drives (SSDs) are provided. A three-dimensional (3D) scalable magnetic memory array includes an interlayer dielectric (IDL) stack of word planes separated by a respective IDL. A plurality of pillar holes is formed in the IDL stack in a single etch step; each of the pillar holes including an oxide barrier coating, and a first conductor M1, and a second conductor M2 forming magnetic pillar memory cells. The first conductor M1 is formed of a magnetic material, and the second conductor M2 is more electrically conductive than the conductor M1; and each of the magnetic pillar memory cell inside the pillar holes have a programmable area using unpatterned programmable magnetic media proximate to a respective one of the word planes.

Abstract: According to one embodiment, a magnetic medium includes a plasmonic underlayer having an Au alloy, where the Au alloy includes one or more alloying components that are substantially immiscible in Au; and a magnetic recording layer above the plasmonic underlayer. According to another embodiment, a magnetic medium, includes a multilayered plasmonic underlayer; and a magnetic recording layer above the multilayered plasmonic underlayer.

Abstract: A segregated media based magnetic memory pillar cell and a method for implementing the segregated media based magnetic memory pillar cell for use in Solid-State Drives (SSDs) are provided. The segregated media based magnetic memory pillar cell includes a first conductor M1 and a second conductor M2 with the second conductor M2 surrounded by the first conductor M1. The first conductor M1 is formed of a segregated magnetic media material defining multiple domains.

Abstract: Techniques for improving memory page allocation are disclosed. In some embodiments, the techniques may be realized as a method for improving memory page allocation including generating, using a compression unit, compressed grains associated with compressed blocks, identifying a write page allocation unit to query, receiving, at the write page allocation unit, a query for a flash memory location to store the compressed grains, determining a flash memory location for the compressed grains, determining a parity location for the compressed grains, returning offsets indicating the flash memory location and the parity location, sending the compressed grains to the free grain location and a parity bit to the parity location as part of an atomic transaction, and recording a start location of compressed grains in a mapping.

Abstract: A hard disk drive is adapted to take the most recent estimated read head positions (the position error signal or PES values) that are obtained during writing and write those values into the data sectors as written PES (WPES) values. The WPES values are available on readback for use as a predictor of the positions in which subsequent data sectors were written and are also available for use in a data recovery procedure should a particular data sector fail to be recovered. In two-dimensional magnetic recording, the difference between the WPES value and the read PES value is a quantity required to rapidly select the best 2D equalizer. The PES values may be encoded prior to being written into the data sectors. The WPES values are appended to the data sectors after the preamble and sync fields, which occur after every servo sector.

Abstract: A magnetic oscillator for use in Microwave Assisted Magnetic Recording (MAMR). The magnetic oscillator can be a spin torque oscillator and includes a magnetic spin polarization layer, a magnetic field generation layer and a non-magnetic intermediate layer sandwiched between the magnetic spin polarization layer and the magnetic field generation layer. The non-magnetic intermediate layer is constructed of a material that provides improved performance, increased lifespan and thermal robustness. The magnetic intermediate layer is constructed of an alloy of Ag and an element X. More preferably the element X can be Sn or Zn.

Abstract: A memory device including at least one memory location for storing information representing data written using a first encryption/decryption method, and a read channel using a second encryption/decryption method for reading and decrypting information as written. The memory device also includes an apparatus that prevents the reading of the at least one memory location using the second encryption/decryption method, in response to an indication that the at least one memory location was written using the first encryption/decryption method. In another embodiment, a reading of all zeroes is returned in response to an indication of another encryption/decryption method.

Abstract: Embodiments disclosed herein generally relate to a magnetic write head including a media facing surface and a surface opposite the media facing surface. The magnetic write head further includes a reflector extending from the surface opposite the media facing surface toward the media facing surface. A semiconductor laser diode gain region protrudes out of the surface opposite the media facing surface, and the reflector helps optimizing the optical energy generated in the semiconductor laser diode gain region to be a single mode over a large current and temperature range.

Abstract: A magnetic sensor that utilizes Rashba effect to generate spin polarization. The sensor eliminates the need for a pinned layer structure and therefore, greatly reduces the gap thickness of the sensor allowing for greatly improved data density. The sensor includes a two dimensional conductor adjacent to a magnetic free layer, that can also be separated from the free layer by a non-magnetic, electrically insulating barrier layer and that can also be constructed with or without side shields. A current flow through the two-dimensional conductor in a direction parallel with the air bearing surface causes a spin polarization oriented perpendicular to the air bearing surface. The voltage output of the sensor changes with changing magnetization direction of the free layer relative to spin polarization in the two dimensional conductor.

Abstract: Methods for writing multiple codewords having multiple sizes to a solid-state device are provided. In one aspect, a method includes receiving a plurality of host data units for storage in a solid-state non-volatile memory. The method includes dividing the plurality of host data units among a plurality of data payloads, wherein a first data payload comprises a first host data unit and a second data payload comprises a portion of a second host data unit. The method includes encoding the first data payload into a first codeword having a first codeword size. The method includes encoding the second data payload into a second codeword having a second codeword size, the second codeword size being different from the first codeword size. The method includes writing the first codeword and the second codeword to a first page in the solid-state non-volatile memory. Systems and machine-readable media are also provided.

Abstract: A magnetic memory array and a method for implementing the magnetic memory array for use in Solid-State Drives (SSDs) are provided. A plurality of magnetic pillar memory cells is formed using a deposition and/or growth process to produce a magnetic memory array substantially avoiding milling of magnetic materials.

Abstract: Disclosed herein is one embodiment of an apparatus that includes a housing that defines an interior cavity. The housing also includes a spring aperture. The apparatus further includes a spring coupled to the housing over the spring aperture, with the spring having a deflection portion and a feedthrough aperture. The apparatus also has an electrical connector coupled to the spring and extending through the feedthrough aperture and the spring aperture. The electrical connector may have a plurality of electrical traces extending from a location external to the housing to a location within the interior cavity of the housing.

Abstract: A perpendicular magnetic recording (PMR) disk has a patterned template layer for the growth of the magnetic grains and the nonmagnetic material surrounding the grains. The template layer is a substantially planar platinum (Pt) or palladium (Pd) layer that is patterned to have Pt or Pd regions arranged in a hexagonal-close-packed (hcp) pattern with the Pt or Pd regions surrounded by Pt-oxide or Pd-oxide regions. The two separate regions of the template layer have different surface chemistries and energies, which provide a “chemical contrast” to impinging atoms during deposition of the metallic magnetic material and nonmagnetic (typically oxide) material, effectively guiding the deposition. The metallic magnetic material is preferentially deposited on the pristine, epitaxial Pt or Pd regions to form the magnetic grains, while the oxide migrates to the oxidized Pt or Pd regions due to the matching of lower surface energy.

Abstract: A method that uses both electron beam (e-beam) lithography and directed self-assembly (DSA) of block copolymers (BCPs) makes guiding lines with oxidized sidewalls for use in subsequent DSA of BCPs. A series of films is deposited on a substrate including a first cross-linked polymer mat layer, a layer of resist, an etch stop layer resistant to oxygen reactive-ion-etching, a second cross-linked polymer mat layer, and an e-beam resist. After patterning and etching the second mat layer, a BCP self-assembles onto the patterned second mat layer and one of the BCP components is removed. Then the second mat layer is etched, using the remaining BCP component as an etch mask. Additional etching steps then create guiding lines of the first mat layer with oxidized sidewalls. The resulting guiding lines have better quality and lower roughness than guiding lines made with just e-beam lithography.

Abstract: Techniques for improved copy on write functionality within an SSD are disclosed. In some embodiments, the techniques may be realized as a method for providing improved copy on write functionality within an SSD including providing, in memory of a device, an indirection data structure. The data structure may include a master entry for cloned data, the master entry having a reference to one or more indexes and a clone entry for the cloned data, the cloned entry having at least one of: a reference to a master index, a reference to a next index, and a value indicating an end of a data structure. The techniques may include traversing, using a computer processor, one or more copies of the cloned data using one or more of the references.

Abstract: Techniques for encoding data for non-volatile memory storage systems are disclosed. In one particular embodiment, the techniques may be realized as a method including determining whether the memory includes a defective memory cell, receiving a message to be written to the memory, sub-dividing the message into a plurality of sub-messages, generating a first error correction code for the sub-messages, the first error correction code being a first type, generating a plurality of second error correction codes for the sub-messages, the second error correction codes being a second type different from the first type, generating a combined message comprising the sub-messages, the first error correction code, and the plurality of second error correction codes, and writing the combined message to the memory, at least a portion of the combined message being written to the defective memory cell.

Abstract: A method for annealing a metal antenna of a near field optical transducer of a magnetic write element without inadvertently heat damaging the read element. A heating element is placed within a write head build in a cerf region outside of the active area of the read and write heads. A layer of thermally conductive, electrically insulating material is formed over the heating element to separate the heating element from the antenna. The thermally conductive, electrically insulating layer is preferably in contact with the antenna. A current can be applied to the heating element to heat the antenna to a temperature that is at or above the operating temperature of the optical transducer. After annealing, the heater element can be removed by the lapping process that is used to define the media facing surface of the head.

Abstract: Techniques for implementing a hybrid non-volatile memory storage system are disclosed. The hybrid memory system may include a first non-volatile memory; a second non-volatile memory; and a memory controller to analyze a type of an operation and a characteristic of the operation, to determine a state of the second non-volatile memory, and to determine whether another operation is being implemented on the second non-volatile memory, the memory controller selectively implementing an operation on one of the first non-volatile memory and the second non-volatile memory segment based on the type of the operation, the characteristic of the operation, the state of the second non-volatile memory, and whether another operation is being implemented on the second non-volatile memory such that the memory controller implements the operation on the first non-volatile memory concurrently with the other operation being implemented on the second non-volatile memory based on the type of the operation.