Patents Assigned to HITACHI HIGH-TECH CORPORATION
  • Patent number: 10895579
    Abstract: Included are an analysis unit that performs an analysis process for analyzing a specimen, a storage unit that stores a result of the analysis process, cumulative information on an occurrence of an event such as registration, change or deletion of analysis parameters such as analysis conditions in the analysis process, and cumulative information on an occurrence of an event such as registration, deletion or replacement of reagent information on a reagent used for analysis of the specimen, for each analysis item, and a display unit that displays the analysis result of the specimen and information on an occurrence status of the event. An operation of the analysis process of the specimen by the analysis unit is controlled, and the information on the event of the analysis parameter and the information on the event of the reagent information is read from the storage unit and displayed in chronological order.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: January 19, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventor: Toshirou Nakano
  • Patent number: 10892158
    Abstract: A manufacturing process of a semiconductor device including a SiGe channel can form a Si segregation layer for protecting the SiGe channel without damaging the SiGe channel. A manufacturing method of a semiconductor device includes: a first step for performing plasma processing on a semiconductor substrate having a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and a second step for performing plasma processing on the semiconductor substrate under a second condition to segregate silicon on the surface of the exposed silicon germanium layer. The silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched under the first condition, hydrogen plasma processing is performed under the second condition, and the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: January 12, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Makoto Miura, Yohei Ishii, Satoshi Sakai, Kenji Maeda
  • Patent number: 10890594
    Abstract: The automated analyzer equalizes the temperature inside a reagent container storage apparatus. The automated analyzer is provided with a reagent container storage apparatus that cools a reagent container, the reagent container storage apparatus being provided with: a reagent storage chamber for storing the reagent container, the reagent storage chamber having at least one of the bottom surface and the side surface thereof cooled by a first cooling source; and a transfer member which is arranged to cover the reagent container stored in the reagent storage chamber, and which is thermally connected to the reagent storage chamber.
    Type: Grant
    Filed: April 28, 2016
    Date of Patent: January 12, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Yu Niiyama, Takenori Okusa
  • Patent number: 10886101
    Abstract: A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: January 5, 2021
    Assignee: Hitachi High-Tech Corporation
    Inventors: Ryo Hirano, Hideo Morishita, Toshihide Agemura, Junichi Katane, Tsunenori Nomaguchi
  • Patent number: 10886110
    Abstract: A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first thres
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: January 5, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Yoshito Kamaji, Masahiro Sumiya
  • Patent number: 10884009
    Abstract: In preparation for a case in which the time at which a first reagent probe comes into contact with cleaning liquid and the time at which a second reagent probe comes into contact with cleaning liquid are the same, an automated analyzer is provided with a charge accumulation unit that is provided between a supply port comprising a conductive material that is electrically connected to the cleaning liquids and a device housing and has a capacitance that is greater than or equal to that of the first reagent probe and second reagent probe. As a result, it is possible to prevent interference between the liquid-surface contact determination units of a plurality of probes.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: January 5, 2021
    Assignee: Hitachi High-Tech Corporation
    Inventors: Hidetsugu Tanoue, Yoichiro Suzuki
  • Patent number: 10886106
    Abstract: A plasma processing apparatus includes a processing chamber in which plasma processing is performed on a wafer, a DP that reduces a pressure in the processing chamber via an evacuating pipe connected to the processing chamber, a TMP that performs evacuation such that a degree of vacuum of the processing chamber becomes a high degree of vacuum, and a stage on which the wafer is placed. Further, the plasma processing apparatus includes a He evacuating pipe that is a flow channel of a heat-transfer gas that transfers heat of the stage subjected to temperature adjustment to the wafer, a first gas supplying mechanism that supplies a gas to a portion of the evacuating pipe which is exposed to atmosphere, during venting a processing chamber to atmosphere, and a control device that controls the first gas supplying mechanism. The control device is provided to communicate with the evacuating pipe.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: January 5, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Kazuyuki Ikenaga, Masaru Matsuzaki
  • Patent number: 10884008
    Abstract: Provided are: a device for storing biochemical reagents wherein an amount of a reagent can be hermetically stored and dropped from a storage site without coming into contact with the outside air; and a biochemical analyzer using the device. The device (10) is constituted by: sticking a top sheet (32) to a base sheet (31) provided with a convex-shaped hollow pocket (16) in which a reagent can be housed; a reagent container as a PTP packaging sheet (30) wherein an opening of the pocket in the base sheet (31), in which a reagent is preliminarily housed, is hermetically sealed with the top sheet (32); and sticking the film sheet surface as the top sheet (32) of the PTP packaging sheet (30), in which the reagent is hermetically packaged, to a cartridge surface of a device body (20) to thereby hermetically seal the inside of the device body too.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: January 5, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Taro Nakazawa, Motohiro Yamazaki, Tatsuya Yamashita, Yoshitaka Kodama
  • Patent number: 10879033
    Abstract: Provided is a stage apparatus that reduces thermal deformation and temperature rise in an upper table on which a sample is mounted and a charged particle beam apparatus including the stage apparatus. The stage apparatus includes: an upper stage that moves an upper table on which a sample is mounted in a first direction; a middle stage that moves a middle table on which the upper stage is mounted in a second direction orthogonal to the first direction; and a lower stage that moves a lower table on which the middle stage is mounted in a third direction orthogonal to the first direction and the second direction. The upper table and the middle table use a material having a smaller thermal expansion coefficient than in a material of the lower table, and the lower table uses a material having higher thermal conductivity than in the material of the upper table and the middle table.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: December 29, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Akira Nishioka, Masaki Mizuochi, Shuichi Nakagawa, Tomotaka Shibazaki, Hironori Ogawa, Naruo Watanabe, Motohiro Takahashi, Takanori Kato
  • Patent number: 10879037
    Abstract: To provide a charged particle beam device which enables observation and evaluation of the surface and the inside of a sample with low damage to the sample, the charged particle beam device has: a charged particle beam source 2; a sample table 9 in which the sample 210 is placed; a charged particle beam optical system which pulsates a charged particle beam 100 and irradiates the charged particle beam to the sample at an acceleration voltage within a range of 0 kV to 5 kV; a split distance selector 125 for selecting a measurement object of the sample; and a split distance setting unit 124 for setting a split distance in one line scanning of the charged particle beam on the sample.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: December 29, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Natsuki Tsuno, Naomasa Suzuki, Atsushi Okita, Muneyuki Fukuda
  • Publication number: 20200399581
    Abstract: The invention provides a technology for promptly determining bacterial identification or an antimicrobial susceptibility testing. In the invention, first, a state where the bacteria are divided is monitored by performing microscopic observation with respect to the shape or the number of bacteria in each of wells of a culture plate for bacterial identification culture or the antimicrobial susceptibility testing. In addition, the shape, the number or the area of the bacteria are interpreted from the image obtained by the microscopic observation whether or not the bacteria proliferate at a stage from an induction phase to a logarithmic phase, and the time-dependent changes thereof are made into a graph. From the graph, it is determined whether or not the bacteria proliferate for each measurement, the determination results are displayed on the screen, and accordingly, the result of the antimicrobial susceptibility is provided every time when the measurement is performed.
    Type: Application
    Filed: September 2, 2020
    Publication date: December 24, 2020
    Applicant: HITACHI HIGH-TECH CORPORATION
    Inventors: Chihiro UEMATSU, Muneo MAESHIMA
  • Patent number: 10872745
    Abstract: A charged-particle beam system comprises: a charged-particle beam device containing a detection unit for detecting electrons generated by irradiating a sample with a charged-particle beam released from a charged particle source; and a signal detection unit in which a detection signal from the detection unit is input through a wiring. The signal detection unit comprises: a separation unit for separating into a rising signal and a falling signal the detection signal from the detection unit; a falling signal processing unit for at least eliminating ringing in the falling signal; and a combination unit generating and delivering a combined signal produced by combining the rising signal, which has been separated by the separation unit, with the falling signal wherefrom the ringing has been eliminated by the falling signal processing unit.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: December 22, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Akio Yamamoto, Kazuki Ikeda, Wen Li, Hiroyuki Takahashi, Shahedul Hoque, Shunsuke Mizutani
  • Patent number: 10872750
    Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: December 22, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Ryoji Asakura, Shota Umeda, Daisuke Shiraishi, Akira Kagoshima, Satomi Inoue
  • Patent number: 10872742
    Abstract: A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.
    Type: Grant
    Filed: November 24, 2016
    Date of Patent: December 22, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Takafumi Miwa, Seiichiro Kanno, Go Miya
  • Patent number: 10872774
    Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: December 22, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Hao Xu, Hiroshige Uchida, Shigeru Nakamoto, Kousuke Fukuchi, Satomi Inoue
  • Patent number: 10871464
    Abstract: There is provided a solid-contact ion-selective electrode having a high potential stability and potential reproducibility. The ion-selective electrode includes an ion sensitive film having a Group-1 element ion, a Group-2 element ion, a hydronium ion or an ammonium ion as a target ion, an ion occluding material layer, and a conductive electrode, wherein the ion occluding material contained in the ion occludes material layer occluding the target ion, the ion occluding material being a Prussian blue analog represented by the structure formula AaMx[M?(CN)6]y?z.kH2O. Herein, A is one type or a plurality of types of Group-1 elements, Group-2 elements, hydronium, or ammonium; M and M? are one type or a plurality of types of transition metals; M or M? includes at least one of nickel, cobalt, copper, silver, and cadmium; ? is a vacancy in a porous coordination polymer; x and y are greater than zero; and a, z, and k are numbers equal to or greater than zero.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: December 22, 2020
    Assignee: Hitachi High-Tech Corporation
    Inventors: Yu Ishige, Wolfgang Schuhmann, Stefan Klink
  • Patent number: 10872411
    Abstract: A diagnostic imaging assistance apparatus according to the present invention performs a process of inputting images of a tissue and a cell, a process of extracting feature amounts of a wide view and a narrow view from a target image to be processed, a process of classifying whether the target images having different views are normal or abnormal from the feature amounts, and a process of classifying a lesion likelihood using a classification result.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: December 22, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Hideharu Hattori, Kenko Uchida, Sadamitsu Aso, Toshinari Sakurai, Yasuki Kakishita
  • Patent number: 10872744
    Abstract: In a charged particle beam apparatus is provided with an optical image capturing apparatus having an angle different from that of a column, a sample may collide with other components when the sample is faced toward the optical image capturing apparatus. The charged particle beam apparatus includes a stage configured to place a sample thereon and to move the sample inside a sample chamber; a column configured to observe the sample by irradiating a charged particle beam on the sample; a first image capturing apparatus configured to observe a surface of the sample irradiated with the charged particle beam from an angle different from that of the column; and a control unit configured to, when observing the sample via the first image capturing apparatus, separate the sample from the column and to tilt the sample through the stage to face toward the first image capturing apparatus.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: December 22, 2020
    Assignee: Hitachi High-Tech Corporation
    Inventors: Munekazu Koyanagi, Wataru Suzuki, Toshihide Agemura
  • Patent number: 10872779
    Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: December 22, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Nobuya Miyoshi, Hiroyuki Kobayashi, Kazunori Shinoda, Kohei Kawamura, Kazumasa Ookuma, Yutaka Kouzuma, Masaru Izawa
  • Patent number: D907593
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: January 12, 2021
    Assignee: Hitachi High-Tech Corporation
    Inventors: Nobuhide Nunomura, Keitarou Ogawa