Abstract: In an automatic analyzer, detection sensitivity in flow rate measurement in a cleaning system having a low pressure and a low flow rate is improved. The present disclosure proposes a control method for an automatic analyzer including a liquid feed pump that feeds, through a flow path, a cleaning liquid to a cleaning mechanism of a dispensing nozzle, and a control unit that controls an operation of the liquid feed pump. The control method includes: operating, by the control unit, the liquid feed pump to feed the cleaning liquid to a low-pressure flow path having a low pressure and a low flow rate, the low-pressure flow path constituting at least a part of the flow path; and operating, by the control unit, a flow rate estimation mechanism provided in the low-pressure flow path to obtain a flow rate estimation value in the low-pressure flow path.

Abstract: The present invention proposes a technique for enabling the execution of measurement processing without referring to a design drawing for which it is difficult to adjust or obtain parameters for image processing that requires knowhow. This measurement system according to the present disclosure refers to a learning model generated on the basis of teaching data, which is generated from a sample image of a semiconductor, and the sample image, generates a region-segmented image from an input image (measurement subject) of a semiconductor having a predetermined structure, and uses the region-segmented image to perform image measurement. Here, the teaching data is an image in which labels, which include a structure of the semiconductor in the sample image, are assigned to each pixel of the image, and the learning model includes parameters for deducing teaching data from the sample image (see indicator 1).

Abstract: Provided is an electrophoresis device that, by electrophoresis, feeds a sample into capillaries and optically detects the sample, the electrophoresis device being provided with capillaries, a capillary head provided at the distal end of the capillaries, a phoretic medium-filled container used for electrophoresis and filled with a phoretic medium, a guide member that covers the side surface of the phoretic medium-filled container, a seal member that seals from below the phoretic medium filled in the phoretic medium-filled container, and a plunger that presses the seal member.

Abstract: This far-infrared spectroscopy device comprises a holding mechanism that is capable of holding a sample in humid air, a detector for detecting light obtained by emitting far infrared light onto the sample, and a signal processing unit for calculating an absorption spectrum of the sample from a signal from the detector. The signal processing unit comprises a threshold processing unit that subjects the signal from the detector to threshold processing and removes the part of the signal influenced by the absorption by the water vapor in the humid air, a signal interpolation unit that carries out interpolation on the signal that has been subjected to the removal by the threshold processing unit, and an absorbance calculation unit for calculating an absorbance from the signal that has been subjected to the interpolation by the signal interpolation unit.

Abstract: Provided is an automatic analysis device, a cooling box, and a cooling method for a reagent in the automatic analysis device capable of suppressing dew condensation on the outside of the reagent cooling box without increasing an outer diameter of the cooling box and without affecting a reagent temperature. The automatic analysis device 100 is a device that is configured to measure physical properties of reaction liquid in which a sample and a reagent are dispensed respectively and reacted in a reaction container 30, and includes a reagent cooling box 24 that is configured to store a reagent container 106 housing the reagent, and a heating unit that is disposed on an outer peripheral part of the reagent cooling box 24 to heat the outer peripheral part.

Abstract: A method of setting a parameter of a charged particle beam device, for shortening the time required to adjust an ABCC parameter. An inverse conversion processing unit generates a simulator input signal corresponding to an electron emitted from a sample. A simulation detector uses an arithmetic model that simulates a detector and executes arithmetic processing on the simulator input signal in a state in which characteristic information is reflected in an arithmetic parameter. A simulated image conversion unit executes arithmetic processing corresponding to an image conversion unit and converts a signal from the simulation detector into a simulated image. An ABCC search unit searches for an ABCC parameter with respect to the simulation detector so that an evaluation value obtained from the simulated image becomes a specified reference value, and outputs the ABCC parameter as a search result to an ABCC control unit of the actual machine.

Abstract: A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

Abstract: A defect inspection apparatus includes a first objective lens having an optical axis is perpendicular to a wafer mounting surface of the stage, a second objective lens having an optical axis forms a predetermined acute angle with respect to the wafer mounting surface of the stage, and a dichroic mirror which reflects light having a first wavelength and transmits or reflects light having a second wavelength. Emitted light of a first optical path 111 from a first light source which is reflected from or transmitted through the dichroic mirror and first emitted light and second emitted light polarized and separated from a second light source which are transmitted through or reflected from the dichroic mirror are incident on the first objective lens, and emitted light of a second optical path from the first light source is incident on the second objective lens.

Abstract: A sample holder HL capable of efficiently applying a pressure to an observation surface of a sample SAM is provided. The sample holder HL includes a fixed electrode 4b, a movable electrode 5, and a pressure applying member 6 attached to the movable electrode 5 and having a function to move the movable electrode 5 in a horizontal direction. When the sample SAM is held between a side surface of the fixed electrode 4b and a side surface of the movable electrode 5, an upper surface of the sample SAM is located within a range of a width of the pressure applying member 6 at a position where the pressure applying member 6 is in contact with the movable electrode 5 in the Z direction.

Abstract: An object of the present invention is to provide a camera holding device for an automatic analysis apparatus, capable of easily adjusting tip positions of pipetting nozzles having different lengths, even with the use of a single single-focus camera. Therefore, the present invention is a camera holding device for an automatic analysis apparatus, which holds a camera to capture an image of the tip of a pipetting nozzle of the automatic analysis apparatus on a pipetting arm that moves the pipetting nozzle through rotational movement, the camera holding device including: an expansion/contraction part that expands and contracts in a vertical direction with respect to the pipetting arm; an arm-side fixing part that fixes one end of the expansion/contraction part to the pipetting arm; and a camera-side fixing part that fixes the camera to the other end of the expansion/contraction part.

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

Abstract: The present disclosure provides a technique enabling accurate ascertaining of a charged state of a resist pattern resulting from irradiation of a charged particle beam. The present disclosure provides a charged particle beam system provided with: a charged particle device provided with a charged particle source, deflectors for causing a primary charged particle beam emitted from the charged particle source to be scanned over a sample, an energy discriminator for performing energy discrimination for secondary electrons emitted when the primary charged particle beam has reached the sample, and a detector for detecting secondary electrons which have passed the energy discriminator; and a computer system for generating a scan image on the basis of signal amounts detected by the detector, which fluctuate during scanning of primary charged particles by the deflectors, and storing the scan image into an image storage unit.

Abstract: An automatic analyzer which accurately detects a liquid volume of a reagent irrespective of a shape of a reagent container is provided. The invention is directed to an automatic analyzer including: a reagent container that contains a reagent; an emission unit that is provided outside the reagent container and emits light so as to pass inside the reagent container; a light receiving unit that is provided outside the reagent container and receives the light emitted from the emission unit; and a determination unit that, based on the light received by the light receiving unit, detects a liquid level inside the reagent container, and determines whether a liquid volume in the reagent container becomes equal to or less than a predetermined value from the liquid level. A wavelength of the light is determined based on a material of the reagent container and a type of the reagent.

Abstract: An automatic analysis device including a container filled with a fluid, a pressure source, a probe which separates the fluid within the container, the probe associated with a probe position, a motor which moves the probe, a flow path which connects the probe and the pressure source, the flow path associated with a flow path position, a pressure sensor which measures pressure variations within the flow path corresponding with time series management data, and a sensor which detects a liquid level position within the container. A condition of flow generated within the flow path is estimated based on (i) the time series measurement data and (ii) a reference value of pressure according to fluid pressure based on gravitational acceleration in a position of the pressure sensor calculated based on (a) the probe position or the flow path position and (b) an immersion depth of the probe determined by the sensor.

Abstract: Provided is an automated analysis device with which sufficient reaction process data can be acquired irrespective of the scale of the device, and with which it is possible to ensure freedom of the device configuration. An automated analysis device 100 is provided with: a reaction disk 1 which circumferentially accommodates a plurality of reaction vessels 2; a specimen dispensing mechanism 11 which dispenses a specimen into the reaction vessels 2; a reagent dispensing mechanism 7 which dispenses a reagent into the reaction vessels 2; a measuring unit 4 which measures a reaction process of a mixture of the specimen and the reagent in the reaction vessels 2; and a cleaning mechanism 3 which cleans the reaction vessels 2 after measurement.

Abstract: A purpose of the present invention is to provide a wafer inspection apparatus wherein a solid contact area with the wafer is reduced, and the likelihood of dust emission due to abrasion is reduced. A wafer inspection device 10 comprises a turntable 200 having an annular wafer support part 202, and a clamping mechanism 206 including a holding claw 219 for clamping the wafer, wherein the wafer support part 202 has a contact portion 202a for contacting a lower surface of the wafer and a non-contact portion 202b that does not contact the lower surface of the wafer, the contact portion 202a and the non-contact portion 202b are alternately arranged in the circumferential direction of the turntable 200 so as to face the outer circumferential portion of the lower surface of the wafer 205, and are provided such that the length in the circumferential direction of the contact portion 202a is shorter than the length in the circumferential direction of the non-contact portion 202b.

Abstract: In the present invention, an overlay misalignment is quickly measured. An image generation unit generates an image on the basis of signals from a detector. A matching processing unit identifies, by means of matching processing with a template image, the position of an overlay measurement pattern in the image generated by the image generation unit. A line profile generation unit generates, by scanning the overlay pattern, a first line profile pertaining to a secondary electron signal and a second line profile pertaining to a backscattered electron signal. An overlay misalignment measurement unit identifies the position of a first pattern in the overlay measurement pattern from the first line profile, identifies the position of a second pattern in the overlay measurement pattern from the second line profile, and measures an overlay misalignment in a sample on the basis of the position of the first pattern and the position of the second pattern.

Abstract: The invention is to simplify operations performed when imaging an electron diffraction pattern by using a transmission electron microscope. As a solution to the problem, a transmission electron microscope includes a detector to which an electron diffraction pattern is projected, a mask for zero-order wave configured to be inserted into and pulled out from between a sample and the detector, and a current detector configured to be inserted into and pulled out from a detection region of the zero-order waves in a state where the mask is inserted. An amount of current of electron beams emitted to the mask is measured in real time, and the measurement result is automatically reflected in settings of imaging conditions of an imaging camera provided in the transmission electron microscope.

Abstract: By using a marker excellent in durability in a multi-leaf collimator, positions of the markers are accurately detected, and positions of the leaves are accurately controlled. The markers are plates containing a phosphor, and surfaces of the plates are fixed to surfaces of the leaves such that end surfaces of the plates are located on predetermined end surfaces of the leaves. An image of the end surfaces of the plates is captured by a camera, and positions of the end surfaces are recognized by image processing.

Abstract: A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.