Abstract: A multi-port packet processor on an integrated circuit provides an efficient means to interface multiple high-speed packet-based communications channels. The multi-port packet processor includes multiple port processors. Each port processor can include a channel interface for coupling to a respective communications channel, a channel processor for processing the data packets received through the channel interface, and an interprocessor communications interface for providing communication between the port processors. The channel interface can be designed to process data packets using a particular set of packet-based protocols. Alternatively, the channel interface can be designed having programmable controls to allow processing of data packets using a selected set, from a number of possible sets, of packet-based protocols.

Abstract: A multi-port packet processor on an integrated circuit provides an efficient means to interface multiple high-speed packet-based communications channels. The multi-port packet processor includes multiple port processors. Each port processor can include a channel interface for coupling to a respective communications channel, a channel processor for processing the data packets received through the channel interface, and an interprocessor communications interface for providing communication between the port processors. The channel interface can be designed to process data packets using a particular set of packet-based protocols. Alternatively, the channel interface can be designed having programmable controls to allow processing of data packets using a selected set, from a number of possible sets, of packet-based protocols.

Abstract: Instead of using a common substrate (101) for each sector of a flash memory, trenches are used to isolate columnar active substrate regions (304) of the substrate (101), and independent access to each of these columnar regions (304) is provided. First, the independent access to each of these columnar regions (304) provides a capability for achieving more precise control over the voltage on the floating gates (106). For example, flash memory in accordance with the present invention is better suited for multi-level storage (storing of more than 1 bit of information per cell). Second, the independent access to each of these columnar regions (304) also provides a capability for areas of flash memory smaller than an entire sector to be erased at one time. Finally, since both programming and erasing is achieved by way of cold electron tunneling from the columnar active substrate region (304), no high voltages need to be applied to either the drain (102) or source (104).

Abstract: The present invention provides a CDMA receiver which uses less expensive, more manufacturable digital filters in combination with noise cancellation circuitry to attenuate highly correlated signals. In addition, the CDMA receiver employs digital IF sampling in the baseband conversion process to remove superimposed DC voltages from the baseband data, obviating the need for DC offset voltage generators.

Abstract: A method of programming an electrically programmable memory cell which cell includes a transistor formed in a semiconductor substrate of first conductivity type having a surface a first well region of second conductivity type is disposed in the substrate adjacent the surface thereof. A second well region of first conductivity type is disposed in the first well region adjacent the surface. The transistor has a source region, a drain region, a floating gate, and a control gate. The method includes raising the control gate to a first selected potential no greater than 9.0 volts, raising the drain to a potential to no more than 5.0 volts, coupling the source region to ground potential, coupling the first well region of second conductivity type to ground potential, and placing the second well region at a potential below ground potential.

Abstract: A method of erasing electrically a programmable memory cell which cell includes a transistor formed in a region of semiconductor material. The transistor has a source region, a drain region, a floating gate, and a control gate. The method includes lowering the control gate to a potential no more negative than 6.5 volts, disconnecting the source and drain regions from any potential source, and placing the region of semiconductor material at a potential no more positive than 8.0 volts.

Abstract: A semiconductor structure for a flash memory has memory cells which are formed in a first conductivity type well, which in turn is formed within an opposite conductivity type well. The opposite conductivity type well is formed in the substrate. Additional regions within each of the first and opposite conductivity type wells are used to provide electrical connections to the corresponding well. This structure is particularly advantageous because it provides the ability to operate the flash memory with considerably lower operating potentials than prior art flash memories.

Abstract: A method and apparatus for producing an electronic circuit which allows a device to be connected to a bus, such as a system bus in a computer. The invention accepts user specified parameters for configuring a device adapter which interfaces the device to the bus, and thereafter generates a customized device adapter based on such user specified parameters. By using a common design macro, which is programmable, a user can easily specify and generate custom device adapters for a plurality of dissimilar devices to be connected to the bus. A resulting adapter architecture allows for multiple, dissimilar devices to interface to a computer bus with a single device adapter integrated circuit or card.

Abstract: The invention relates to data transfers between devices having asynchronous clocks. A FIFO having multiple levels holds the data while en route from a sender to a receiver. The invention monitors the FIFO. When all levels become full, the invention issues a FIFO_FULL signal. When all levels become empty, the invention issues a FIFO_EMPTY signal. In these signals, there are four events whose timing is important. (1) The ACTUATION of the FIFO_FULL is immediate; (2) the ACTUATION of the FIFO_EMPTY signal is immediate; (3) the DE-ACTUATION of the FIFO_FULL signal is synchronous with the clock of the computer reading the FIFO; (4) the DE-ACTUATION of the FIFO_EMPTY signal is synchronous with the clock of the computer writing to the FIFO. The invention allows throughput through the FIFO to proceed at a very high speed, even though the sender and receiver are asynchronous.

Abstract: Memory transactions are carried out in an order that maximizes concurrency in a memory system such as a multi-bank interleaved memory system. Read data is collected in a buffer memory to be presented back to the bus in the same order as read transactions were requested. An adaptive algorithm groups writes to minimize overhead associated with transitioning from reading to writing into memory.

Abstract: A method for improving the timing performance of a standard cell ASIC layout. The method is operable at any phase of the ASIC design cycle including following the completion of layout phase placement and routing. The method compares post-layout timing values with pre-layout timing targets for each timing arc associated with each standard cell component of the ASIC design. For each timing arc, a functionally equivalent cell having higher or lower output drive is selected which optimally improves the timing slack on each timing arc. To assure that the method converges and terminates, a list of timing slack values, one for each timing arc of the ASIC design, is constructed in sorted order from worst timing slack to best timing slack. The swap method determines in order from worse timing slack to best a functionally equivalent standard cell which may be swapped to improve the timing slack on the timing arc.

Abstract: The invention concerns integrated circuits in which a MACRO is embedded in a standard cell array. One level of metal is devoted exclusively to non-local interconnect, and a layer of polysilicon is devoted to local interconnect, thereby saving significant space.

Abstract: An expansion board architecture and method for configuring the board. The board comprises a controller chip, a parallel bus, a memory for storing a plurality of configuration data bits, and a control line. The controller chip controls the operation of the board and has an internal register for storing a plurality of data bits. The parallel bus transfers data bits between the controller chip and other components on the board and is connected to the memory. The control line is connected between the controller and the memory for enabling the output of the memory to transfer the configuration bits to the register over the bus.

Abstract: A process for fabricating a bipolar transistor on a silicon-on-insulator substrate which includes etching a bipolar transistor area into the substrate, wherein the bipolar transistor area has substantially vertical sidewalls and a bottom, and forming a buried collector in bottom of the bipolar transistor area. Polysilicon sidewalls are formed adjacent to the vertical sidewalls in the bipolar transistor area, wherein the polysilicon sidewalls are connected to the buried collector. The polysilicon sidewalls are oxidized to form a layer of oxidized polysilicon. Oxide sidewalls are formed on the oxidized polysilicon sidewalls, and epitaxial silicon is formed to fill the bipolar transistor area. A base and an emitter are formed for the bipolar transistor, within the epitaxial barrier.

Abstract: The invention concerns the use of spin-on-glass (SOG) to bond two layers of semiconductor together, in order to form a Silicon-on-Insulator (SOI) structure. One type of SOG is a cross-linked siloxane polymer, preferably of the poly-organo-siloxane type, comprising a carbon content of at least 5 atomic weight percent.

Abstract: Instead of using a common substrate (101) for each sector of a flash memory, trenches are used to isolate columnar active substrate regions (304) of the substrate (101), and independent access to each of these columnar regions (304) is provided. First, the independent access to each of these columnar regions (304) provides a capability for achieving more precise control over the voltage on the floating gates (106). For example, flash memory in accordance with the present invention is better suited for multi-level storage (storing of more than 1 bit of information per cell). Second, the independent access to each of these columnar regions (304) also provides a capability for areas of flash memory smaller than an entire sector to be erased at one time. Finally, since both programming and erasing is achieved by way of cold electron tunneling from the columnar active substrate region (304), no high voltages need to be applied to either the drain (102) or source (104).

Abstract: A low dielectric material is applied, as by spinning on, over the passivation layer of a semiconductor chip to fill the gaps which may exist between the top layer metal lines, and thereby minimize the possibility of cross talk which might otherwise be present between those lines.

Abstract: Instead of using a common substrate (101) for each sector of a flash memory, trenches are used to isolate columnar active substrate regions (304) of the substrate (101), and independent access to each of these columnar regions (304) is provided. First, the independent access to each of these columnar regions (304) provides a capability for achieving more precise control over the voltage on the floating gates (106). For example, flash memory in accordance with the present invention is better suited for multi-level storage (storing of more than 1 bit of information per cell). Second, the independent access to each of these columnar regions (304) also provides a capability for areas of flash memory smaller than an entire sector to be erased at one time. Finally, since both programming and erasing is achieved by way of cold electron tunneling from the columnar active substrate region (304), no high voltages need to be applied to either the drain (102) or source (104).

Abstract: The invention concerns a stylus for use with a digitizing tablet. The stylus stores information which identifies characteristics of a user's handwriting. These characteristics are transmitted to a computer when the user interfaces with the computer, and are used by the computer to recognize the user's handwriting.

Abstract: An erase method provides for self-converging erase on a flash memory cell by rapidly switching a bias on a control gate while a lateral field is present in a channel region. Preferably, the lateral field is provided by differentially biasing the source and drain of the cell and the change in bias of the control gate is sufficiently fast to induce a transient response at the floating gate. The net transient vertical field formed across a tunneling oxide between the channel region and the floating gate causes moderate hot carrier injection between the channel region and the floating gate. This method is self-converging, since carrier injection to the floating gate will not happen unless a sufficient number of carriers are removed from the floating gate during the array step. Since the bulk of the self-converging effect occurs as the control gate voltage is transitioning and shortly thereafter, very little time is needed at the end of an erase pulse to effect this response.