Abstract: The present invention relates to a chip sized integrated circuit package. A device package embodying the invention includes: an insulative substrate having a plurality of conductive first lands formed on an upper surface of the substrate and a plurality of conductive second lands formed on a lower surface of the insulating substrate; a plurality of via holes formed in the substrate adjacent the first and second lands; a conductive film formed on inner walls of the via holes and connecting corresponding ones of the first and second lands; and at least one cavity in the substrate that has an edge extending along a in centerline of a row of the via holes. A semiconductor chip having a plurality of bond pads is attached to a center portion of the upper surface of the substrate, and a plurality in of wires connect corresponding ones of the bond pads and the first lands. An insulation resin covers the integrated circuit chip, the wires, the first lands, and the upper surface of the substrate.

Abstract: A low power audio processor is disclosed which includes a bit stream processing unit for performing bit processing for an applied audio stream and for decoding the bit processed audio stream to have a format conducive to digital signal processing; a digital signal processing unit for receiving the decoded data from the bit stream processing unit to perform digital signal processing; a post processing unit for post processing audio data from the digital signal processing unit to output final audio data; and a host interface unit for interfacing with an external device to provide an audio parallel stream from the external device to the bit stream processing unit.

Abstract: A comparator according to the present invention can generate an output signal of low or high level by comparing a first and second input voltages that have a common voltage. An input stage circuit of a comparator according to the present invention receives a common voltage detection signal. The common voltage is supplied with a first offset voltage when the common voltage detection signal is on low level, and the common voltage is supplied with a second offset voltage when the common voltage detection signal is on high level. Then, the input stage circuit performs amplification to output a voltage difference between the first input voltage and the second input voltage to the comparator. Accordingly, the comparator with offset voltage according to the present invention can sufficiently amplify the input signal difference of low common voltage by selectively applying different offset voltages to a common voltage in accordance with the common voltage level of the input signal.

Abstract: A method for fabricating a CMOS image sensor having a characteristic of a reduced dark current includes the steps of: a) providing a semiconductor structure, wherein the semiconductor structure includes a photodiode and peripheral elements formed on a semiconductor substrate; b) forming an insulating layer on the semiconductor structure; c) forming a hydrogen containing dielectric layer on the insulting layer; d) diffusing hydrogen ions contained in the hydrogen containing dielectric layer into a surface of the photodiode, thereby removing a dangling bond; and e) removing the hydrogen containing dielectric layer.

Abstract: A transistor and a method for fabricating the same that involves a forming a device isolation oxide film semiconductor substrate, forming an opening in the device isolation oxide to open the substrate and define an active region, the junction between the oxide and the substrate having a rounded profile, and then forming a complex gate electrode structure in the active region. The preferred gate electrode structure comprises a gate oxide and a stacked conductor structure having a first and a second conductor, an optional hard mask layer formed on the second conductor, an oxide layer formed on the first conductor, and nitride spacers formed on the oxide layer on the sidewalls of the gate electrode. On either side of the gate electrode structure lightly doped drain (LDD) regions and source drain regions are then formed in the active region of the semiconductor substrate. The wafer is then planarized with one or more insulating films to condition the wafer for subsequent processing.

Abstract: An apparatus and method for processing a seamless handover in IMT-2000 system. The apparatus includes: a unit for performing an interface with a base station controller and an analog subscriber interface for a test; a unit, having a structure of a non-blocking common memory, for switching an asynchronous transfer mode cell; and a unit for performing a trunk interface.

Abstract: Disclosed is a capacitor for semiconductor device with a dielectric layer having low leakage current and high dielectric constant. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the dielectric layer is a TiON layer.

Abstract: The present invention is a high-voltage generation circuit configured to sequentially activate a plurality of high-voltage pump circuits to precisely pump a level of high voltage. In one embodiment, the high-voltage generation circuit includes a high-voltage level detection unit for outputting a high-voltage detected signal, a high-voltage pump control unit for generating a control signal responsive to a detected signal, an oscillator for generating a pulse signal for driving a plurality of high-voltage pumps, a sequential delay unit for sequentially delaying the pulse signal from the oscillator, and a plurality of high-voltage pumps for pumping the high voltage based on a delayed pulse signal and the control signal.

Abstract: A method for automatically controlling an exposure time in image sensor having a pixel array includes the steps of producing total pixel value of the green pixels from the pixel array, producing a mean value of the green pixels dividing the total pixel value of the green pixels by the number of the green pixels, producing a deviation value, wherein the deviation value is an absolute value of a difference between the mean value and a predetermined reference value, comparing the deviation value with a predetermined boundary value, in case where the deviation value is smaller than the predetermined boundary value, capturing a next image according to a current exposure time, and in case where the deviation value is larger than the predetermined boundary value, calculating an exposure control rate and determining whether an automatic exposure control mode is enabled, and in case where the automatic exposure control mode is disabled, capturing the next image according to the current exposure time, and in case where

Abstract: A call processing method capable of home-zone additional service in a mobile communication system, in particular, which gives subscribers a discount in accounting without an additional equipment if the subscribers call within previously registered areas. According to the call processing method capable of home-zone additional service in the mobile communication service of the invention, the subscriber can be provided with the home-zone additional service with low cost, thereby enhancing customer satisfaction.

Abstract: In the present invention, a forward direction power control method using a backward direction power control sub-channel for a mobile communication system is disclosed. The method according to the present invention is directed to rapidly and effectively controlling the power of a base station transmission signal using a power control, sub-channel in a backward direction pilot channel when performing an outer loop and inner loop in a mobile station of a mobile communication system which adapts an IS-2000 CDMA method and rapidly coping with a channel environment and forward direction wireless environment for thereby decreasing the power of a transmission signal of the base station and increasing the capacity of the system.

Abstract: The present invention provides a polymer that can be used as an anti-reflective coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching.

Abstract: A method of producing two domains within a liquid crystal layer by first forming two electrodes on a substrate, using a liquid crystal layer aligned vertically with respect to the substrate formed on the substrate where the substrate has two electrodes separated from each other with a selected distance. Finally, an electric field between the two electrodes is applied.

Abstract: A radio resource control (RRC) message is freely transmitted in an asynchronous mobile communication system regardless of an operating type of a core network. The method for transmitting a radio resource message from an asynchronous mobile station to an asynchronous radio network in an asynchronous mobile communication system, the method comprising the steps of: a) determining whether a core network is a synchronous core network or an asynchronous core network; b) if the core network is the synchronous core network, generating a RRC message having information related to the synchronous core network; and c) transmitting the RRC message to the asynchronous radio network.

Abstract: Disclosed are a capacitor for semiconductor capable of increasing storage capacitance as well as preventing leakage current and a method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate. The surface of the lower electrode is surface-treated so as to prevent a natural oxide layer from generating on the surface thereof. A (TaO)1−x(TiO)N layer as a dielectric is deposited on the upper part of the lower electrode. Afterwards, to crystallize the (TaO)1−x(TiO)N layer, a thermal-treatment is performed. Next, an upper electrode is formed on the upper part of the (TaO)1−x(TiO)N layer.

Abstract: The present invention relate to a method for the operation and maintenance of a base station (BS) using a remote procedure call (RPC) in an international mobile telecommunication-2000 (IMT-2000) system which includes a base station environment management system (BEMS), a RPC process, an access control processor (ACP), an ATM interference processor (AIP) and an access signaling processor (ASP).

Abstract: A frame synchronizing apparatus using a memory in which a frame synchronizing algorithm is embodied in an ASIC(application specific integrated circuit) so as to be used in a circuit for synchronizing a frame in framing/deframing method for improving a performance of ATM(asynchronous transfer mode) cell extraction in high-error wireless environment of WATM(wireless asynchronous transfer mode), and such an algorithm can be employed in a circuit for synchronizing the frame in a received data stream.

Abstract: NAND type non-volatile ferroelectric memory cell and non-volatile ferroelectric memory of the same, in which numbers of access to a main cell and a reference cell are made the same, to maintain bitline induced voltages by the reference cell and by the main cell constant, for improving operation characteristics, minimizing a layout area, and permits a high density device integration, the memory cell including an N number of transistors connected in series, a bitline having an input terminal of a first transistor and an output terminal of (N)th transistor among the N number of transistors connected thereto, wordlines respectively connected to gates of the transistors except the (N)th transistor, a WEC signal line connected to a gate of the (N)th transistor and adapted to have an enable signal applied thereto only in a write or re-store mode, and ferroelectric capacitors respectively connected both to the wordlines and output terminals of the transistors.

Abstract: Disclosed is an organic anti-reflective film composition suitable for use in submicrolithography, comprising a compound of Formula 13 and a compound of Formula 14. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.

Abstract: The present invention is about a method for assigning channels in a mobile communication system, having the function to analyze the marginal resources according to each operation mode and thereby to maximize the efficiency of a multi-channel DSP. The present invention includes the steps of: a) checking what an input call is among the three modes of vocoding, bypass and data service; b) deciding whether there is a usable channel for the same mode as the input call requires; c) if there is a usable channel for the same mode as the input call requires, assigning the input call to a dedicated channel for the same mode as the input call requires; and d) if there is no usable channel for the same mode as the input call requires, assigning the input call to a complex channel in case that there is a usable complex channel.