Abstract: A condenser lens arrangement for an electron beam system is described. The condenser lens arrangement includes a magnetic condenser lens adapted for generating a magnetic condenser lens field, the condenser lens having a symmetry axis, and a magnetic deflector adapted for generating a magnetic deflector field. The deflector is configured so that the superposition of the magnetic condenser lens field and the magnetic deflector field results in an optical axis of the condenser lens arrangement being movable relative to the symmetry axis. Further, an electron beam optical system including a condenser lens arrangement and a method for moving a condenser lens are described.

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract: A method of pre-treating an ultra high vacuum charged particle gun chamber by ion stimulated desorption is provided. The method includes generating a plasma for providing a plasma ion source, and applying a negative potential to at least one surface in the gun chamber, wherein the negative potential is adapted for extracting an ion flux from the plasma ion source to the at least one surface for desorbing contamination particles from the at least one surface by the ion flux impinging on the at least one surface.

Abstract: An electron beam device 100 includes: a beam emitter 102 for emitting a primary electron beam 101; an objective electron lens 127 for focusing the primary electron beam 101 onto a specimen 130, the objective lens defining an optical axis 126; a beam tilting arrangement 103 configured to direct the primary electron beam 101 to the electron lens 127 at an adjustable offset from the optical axis 126 such that the objective electron lens 127 directs the electron beam 101 to strike the specimen 130 at an adjustable oblique beam landing angle, whereby a chromatic aberration is caused; a beam separator 115 having a first dispersion for separating a signal electron beam 135 from the primary electron beam 101; and a dispersion compensation element 104 adapted to adjust a compensation dispersion of the primary electron beam 101 so as to compensate for a beam aberration resulting from the first dispersion and from the chromatic aberration.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

Abstract: A method of compensating mechanical, magnetic and/or electrostatic inaccuracies in a scanning charged particle beam device is described. The method includes an alignment procedure, wherein the following steps are conducted: compensating 4-fold astigmatism with an element having at least 8-pole compensation capability, wherein the aligning and compensating steps of the alignment procedure act on a charged particle beam with beam dimensions in two orthogonal directions each of at least 50 ?m and coaxially aligned with at least the element having at least the 8-pole compensation capability.

Abstract: An electron beam wafer imaging system is described. The system includes an emitter for emitting an electron beam; a power supply for applying a voltage between the emitter and the column housing of at least 20 kV; an objective lens for focusing the electron beam on a wafer, wherein the magnetic lens component and the electrostatic lens component substantially overlap each other, wherein the electrostatic lens component has a first electrode, a second electrode and a third electrode; and a control electrode positioned along an optical axis from the position of the third electrode to the position of a specimen stage, wherein the control electrode is configured for control of signal electrons; a controller to switch between a first operational mode and a second operational mode, wherein the controller is connected to a further power supply for switching between the first operational mode and the second operational mode.

Abstract: A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Abstract: A charged particle detector arrangement is described. The detector arrangement includes a detection element and a collector electrode configured to collect charged particles released from the detection element upon impact of signal charged particles.

Abstract: A secondary charged particle detection system for a charged particle beam device is described. The detection system includes a beam splitter for separating a primary beam and a secondary beam formed upon impact on a specimen; a beam bender for deflecting the secondary beam; a focusing lens for focusing the secondary beam; a detection element for detecting the secondary beam particles, and three deflection elements, wherein at least a first deflector is provided between the beam bender and the focusing lens, at least a second deflector is provided between the focusing lens and the detection element, at least a third deflector is provided between the beam splitter and the detection element.

Abstract: A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap (G), a particle optics configured for separating the signal beam into a first portion of the signal beam and into at least one second portion of the signal beam, and configured for focusing the first portion of the signal beam and the at least one second portion of the signal beam. The particle optics includes an aperture plate and at least a first inner aperture openings in the aperture plate, and at least one second radially outer aperture opening in the aperture plate, wherein the aperture plate is configured to be biased to one potential surrounding the first inner aperture opening and the at least one outer aperture opening.

Abstract: A correction device for a charged particle beam device for decreasing, correcting or inverting (that is adjusting) the spherical aberration of a charged particle beam is described. The correction principle is similar to that of common multipole-Correctors. But unlike common devices of that kind this new correction device gets along entirely with plane apertures having specially shaped holes in order to supply the multipoles required for correction and is therefore predestined for miniaturization and the use in multi column devices.

Abstract: A method and a device for stabilizing the emission current of an emitter of a charged particle beam device are provided. In the method, the emitter is operated under predetermined operation parameters including at least one voltage with a predetermined value. The method includes determining a first value of the emission current under the predetermined operation parameters and flash cleaning the emitter while a first electric field is applied to the emitter. The first electric field is generated by the at least one voltage having a first value of the at least one voltage, wherein the first value of the at least one voltage is provided in dependence of the determined first value of the emission current.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap, a particle optics configured for separating the signal beam in a first portion of the signal beam and in at least one second portion of the signal beam, configured for focusing the first portion of the signal beam, and configured for deflecting and focusing the at least one second portion of the signal beam, wherein the particle optics includes a first electrode and at least one second electrode. Therein, the first electrode is an inner electrode and the at least one second electrode is provided radially outward of the first electrode.

Abstract: A condenser lens arrangement for an electron beam system is described. The condenser lens arrangement includes a magnetic condenser lens adapted for generating a magnetic condenser lens field, the condenser lens having a symmetry axis, and a magnetic deflector adapted for generating a magnetic deflector field. The deflector is configured so that the superposition of the magnetic condenser lens field and the magnetic deflector field results in an optical axis of the condenser lens arrangement being movable relative to the symmetry axis. Further, an electron beam optical system including a condenser lens arrangement and a method for moving a condenser lens are described.

Abstract: A charged particle detector arrangement is described. The detector arrangement includes a detection element and a collector electrode configured to collect charged particles released from the detection element upon impact of signal charged particles.

Abstract: A deflector system for fast magnetic deflection of a charged particle beam is described. The deflector system includes a tube for separating the beam from the magnetic deflector coil arrangement, the tube having a middle section, at least a first end section, and a second end section, wherein a wall thickness of the middle section is lower than a wall thickness of at least one of the first end section and the second end section.

Abstract: A shielding member for a charged particle beam apparatus includes a conductive substrate; and a through hole extending through the conductive substrate. The conductive substrate is comprised of a material having a specific electrical resistivity in a range from about 106 ?cm to about 1012 ?cm.