Abstract: A sealing system includes a first seal, a second seal spaced apart from the first seal and a sealing chamber defined between the first and second seals. The sealing chamber is fluidly connected to a vacuum source. In operation, the sealing chamber is maintained at a pressure that is below atmospheric pressure. Contaminants that breach one of the first and second seals are pulled into the sealing chamber and removed by the vacuum source.

Abstract: A test leak device for functional testing of a leak detection device for the leak test of a test specimen (14) filled with a liquid (12) having an internal pressure that is lower than atmospheric pressure, comprising a reservoir (102) filled with a test liquid (104), wherein the test liquid (104) has a vapor pressure of less than 500 mbar at room temperature, and the reservoir (102) comprises an outlet (106), and a pump (100) cooperating with the reservoir (102) and configured to convey the test liquid (104) from the reservoir (102) in such a way that the test liquid (104) escapes from the pump (100) through the outlet (106) in liquid form from the reservoir (102).

Abstract: A particle detector includes at least one throttling element which defines an aerodynamic aperture. A light source illuminates a region of the aerodynamic aperture at about a focal point of an aerodynamic lens. A detector is configured to receive a light scattered from one or more particles which traverse the aerodynamic aperture. A method for detecting and measuring particles previously deposited on a surface of a semiconductor manufacturing chamber is also described.

Abstract: Method for adapting the concentration of a sample gas in a gas mixture to be analysed by a gas chromatograph assembly, the assembly comprising a sample gas inlet, a secondary gas inlet, a gas chromatograph sensor, a gas chromatograph column, and a gas chromatograph bypass parallel to the column, characterized by a) introducing sample gas through the sample gas inlet, b) introducing secondary gas through the secondary gas inlet, c) mixing the sample gas and the secondary gas to a gas mixture and conducting the mixture via the bypass, d) circulating the mixture in a gas conducting loop comprising the bypass and the sensor, e) repeating steps b), c) and d) without step a) to gradually reduce the concentration of sample gas within the mixture until the concentration reaches a desired predetermined level, f) analysing the mixture by means of gas chromatography employing the column and the sensor.

Abstract: A vacuum pressure sensor includes a vacuum-tight electrical feedthrough. The feedthrough has an electrically insulating insulator element with a through-opening, having a first boundary surface adjacent to the through-opening and a second boundary surface also adjacent to the through-opening and opposite to the first boundary surface, and an electrically conductive conductor element which extends through the through-opening and which is connected to the insulator element in a vacuum-tight manner along a circumferential line of the conductor element. The insulator element is transmissive to electromagnetic radiation in an optical wavelength range and the first boundary surface and/or the second boundary surface is formed as a curved surface.

Abstract: The invention relates to a film chamber (10) for testing the sealing tightness of a test specimen containing a test fluid, the film chamber comprising: at least one vacuum connection (20) which can be connected to a vacuum pump (32) and a gas detector (36); at least one flexible wall region (14) that defines a film chamber volume; and a frame (12) that surrounds the flexible wall region (14) on the outside in order to seal the film chamber volume. The film chamber is characterized in that: the vacuum connection (20) is located in a region arranged centrally with respect to the frame (12) and is radially outwardly surrounded by the frame (12); and at least one gas inlet (22, 30) for supplying a carrier gas is located in the region of the outer frame in such a way that the carrier gas flows through the gas inlet through the film chamber volume along the flexible wall region (14) radially from the outside inwardly to the vacuum connection (20).

Abstract: A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetically sealed via extends from the split-ring conductor to the second side of the support and connects to an electrical supply. A ground plane is formed on the second side of the support. A plasma is generated proximate to the first side of the support, and the support seals to a wall of the chamber such that the first side is exposed to the one or more gases inside the chamber and the second side is isolated from the plasma and the one or more gases inside of the chamber.

Abstract: A device for leak detection on a test specimen, comprising a mass spectrometer (12), an at least three-stage turbomolecular pump (14), the input stage (18) of which is connected to the mass spectrometer (12) and which has a first intermediate gas inlet arranged between the input pump stage and the intermediate pump stage (26) and a second intermediate gas inlet arranged between the intermediate pump stage (26) and the output pump stage (24), an at least two-stage booster pump, the input pump stage (46) of which can be connected to the test specimen to be examined and which has an intermediate gas outlet (54) arranged between the input pump stage (46) and the output pump stage (48) and a pre-vacuum pump (22) which is connected to the outlet (20) of the output pump stage (24) of the turbomolecular pump (14) and is configured to generate a pre-vacuum pressure of less than 50 mbar at the outlet (20) of the turbomolecular pump (14) and to evacuate it against atmospheric pressure, characterized in that the intermed

Abstract: A wide-range ion source for a mass spectrometer comprises a first portion and a second portion that is positioned downstream of the first portion. The first portion includes an anode and a first filament that is positioned proximate the anode and secured in place relative to the anode. The first filament is exposed to a pressure of a process chamber. A first electron repeller has at least a partially circular shape. The second portion includes a tubular anode, a second filament surrounding the tubular anode, an extraction lens defining an opening and a focus lens to conduct ions into a volume.

Abstract: A gas leak detection device for identifying a gas leak in a test object, comprising a connector (20) for the test object or a test chamber accommodating the test object, a vacuum pump (16, 18) connected to the connector (20) for evacuating the test object or the test chamber, a gas detector (12) connected to the vacuum pump (16, 18) and the connector (20) and configured for detection of a first test gas and for integral leak detection or for localized leak detection of a gas leak in the test object according to the spraying principle during continuous operation of the vacuum pump (16, 18), a gas pressure sensor (24) connected to the vacuum pump (16, 18) and the connector (20) and configured for integral measurement of the total pressure increase at the connector (20) according to the pressure increase method and/or the partial pressure increase of at least one second test gas different from the first test gas at the connector (20) according to the partial pressure increase method, and a blocking device (26) c

Abstract: A time-of-flight mass spectrometer assembly includes a flange with a vacuum chamber facing surface and an environment facing surface. The flange defines an opening that extends between the vacuum chamber facing surface and the environment facing surface. A plurality of stacked components are supported by the vacuum chamber facing surface of the flange. A secondary flange is removably secured within the opening of the flange. The secondary flange includes a vacuum chamber facing surface and an environment facing surface. A supported spectrometer component is supported by the vacuum chamber facing surface of the secondary flange such that removal of the secondary flange from the flange acts to remove the supported component from the plurality of stacked components supported by the vacuum chamber facing surface of the flange.

Abstract: Sniffing leak detector including a handheld device with a sniffer tip probe including a sample gas inlet, a reference gas inlet, a gas analyzer, and a switching valve adapted to alternatingly connect the sample gas inlet to the gas analyzer and the reference gas inlet to the gas analyzer in a gas conducting manner, such that either the gas drawn through the sample gas inlet or the gas drawn through the reference gas inlet is analyzed by the gas analyzer, characterized in that the reference gas inlet is arranged in a remote distance from the sniffer tip probe and a reference gas conduit connecting the reference gas inlet and the switching valve includes a buffer chamber adapted to homogeneously mix gas drawn into the buffer chamber through the reference gas inlet with the remaining gas in the buffer chamber.

Abstract: A method for displaying gas concentration values on a graphical display of a leak detector comprises detecting a presence of a gas using a gas sensor. A signal is generated by the gas sensor and transmitted from the gas sensor to a processor. The received signal is processed to determine a gas concentration value and a corresponding time stamp. The gas concentration values and corresponding time stamps are displayed graphically as they are determined and newly determined gas concentration values and corresponding time stamps are displayed in relation to previously determined gas concentration values and time stamps in streaming manner.

Abstract: A sniffer probe for a gas analyzer is provided herein, the sniffer probe designed to suction gas and can be connected to the gas analyzer and includes a sniffer tip with a suction opening, such that gas is suctioned through the suction opening along a central perpendicular to the suction opening, and the sniffer tip has at least one elongate gas-guiding element, which is arranged substantially parallel to the central perpendicular and distally protrudes beyond the suction opening.

Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: The disclosure provides a gas detector with an ionizing device for producing ions depending on a gas to be detected. The gas detector includes a catcher for receiving the electrical current produced by the ions, and a measuring device with an electrical measuring resistor. The electrical measuring resistor produces an electrical measuring potential from the current and is surrounded, at least in part, by an electrical shield resistor, denoted by RT. The same potentials, up to a deviation of at most 25%, are applied in the longitudinal direction of the electrical measuring resistor to mutually opposed regions of the electrical measuring resistor and the electrical shield resistor.

Abstract: A method 14 for the controlled removal of a protective layer 3 from a surface of a component 10, wherein the component comprises: a base body 1; an intermediate layer 2, which at least partially covers the base body; and said protective layer 3, which comprises an amorphous solid, in particular an amorphous nonmetal, in particular amorphous ceramic, and at least partially covers the intermediate layer; wherein the method comprises the following steps: bringing 11 the protective layer 3 into contact with an etching or solvent medium 4; and removing 12 the protective layer 3 under the action of the etching or solvent medium 4 until the intermediate layer 2 is exposed; and wherein the etching or solvent medium causes a first etching or dissolving speed of the protective layer and a second etching or dissolving speed of the intermediate layer and wherein the first etching or dissolving speed is greater than the second etching or dissolving speed.

Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: A time-of-flight mass spectrometer assembly includes a flange with a vacuum chamber facing surface and an environment facing surface. The flange defines an opening that extends between the vacuum chamber facing surface and the environment facing surface. A plurality of stacked components are supported by the vacuum chamber facing surface of the flange. A secondary flange is removably secured within the opening of the flange. The secondary flange includes a vacuum chamber facing surface and an environment facing surface. A supported spectrometer component is supported by the vacuum chamber facing surface of the secondary flange such that removal of the secondary flange from the flange acts to remove the supported component from the plurality of stacked components supported by the vacuum chamber facing surface of the flange.

Abstract: In a method for the detection of gas using a gas-selective membrane, a temperature device that is designed to change the temperature of the membrane, and a detector that is designed to acquire a measurement signal on the basis of the amount of gas passing through the membrane, provision is made for the following steps: changing the temperature of the membrane using the temperature device, acquiring at least one first measuring value (Hn, Hn+1, Hn+2) using the detector at a time at which the membrane temperature adopts a first temperature value, acquiring at least one second measuring value (Ln, Ln+1) using the detector at a time at which the membrane temperature adopts a second temperature value different from the first temperature value, calculating the difference between the two measuring values, and using the difference to assess whether a gas to be detected is present.