Abstract: The invention relates to a method and to a measurement cell assembly for determining a pressure in a pressure cell (2) are given, wherein the method consists in that a measurement signal (x) is determined, which is at least proportional to a measured pressure in the pressure cell (2), and in that the measurement signal (x) is filtered by means of a first filter unit (10) having a low-pass characteristic in order to produce an output signal (y), wherein the low-pass characteristics of the first filter unit (10) is defined by means of a first damping factor (?1).

Abstract: A method for displaying gas concentration values on a graphical display of a leak detector comprises detecting a presence of a gas using a gas sensor. A signal is generated by the gas sensor and transmitted from the gas sensor to a processor. The received signal is processed to determine a gas concentration value and a corresponding time stamp. The gas concentration values and corresponding time stamps are displayed graphically as they are determined and newly determined gas concentration values and corresponding time stamps are displayed in relation to previously determined gas concentration values and time stamps in streaming manner.

Abstract: A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.

Abstract: A system is disclosed for analyzing a gas sample. The system includes a sample collector structured to obtain a gas sample from an environment and a sample analyzer structured to removably couple with the sample collector. The sample analyzer is configured to: (i) measure an amount of internal standard and adsorb the measured amount of internal standard onto the sample collector; (ii) desorb the gas sample and the measured amount of internal standard from the sample collector; (iii) analyze the gas sample and the measured amount of internal standard; (iv) perform a quantitative analysis of the gas sample based on the analysis of the desorbed measured amount of internal standard; and (v) determine a type of the gas sample and an amount of the gas sample.

Abstract: A vacuum leak detector has a housing enclosing a suction chamber, a vacuum pump evacuating the suction chamber, and a gas detector connected to the suction chamber. The housing has a test leak with a selectively gas-permeable membrane. The test leak connects the outer atmosphere of the housing with the suction chamber.

Abstract: A system for monitoring thin film deposition is described. The system includes a quartz crystal and a synthesizer to generate a modulated signal. The modulated signal is to be grounded through the quartz crystal. The system also includes a phase detector to determine a phase of the modulated signal from the quartz crystal in order to monitor thin film deposition. A modulation index can be selected so that, at resonance, high frequency of the signal matches the crystal frequency.

Abstract: A chamber, for bounding a plasma generation area in a vacuum pressure sensor, includes an electrically conductive casing element located radially on an outside relative to a central axis. The chamber includes electrically conductive wall elements arranged substantially perpendicular to the central axis and connected to the electrically conductive casing element. At least one of the wall elements has a first opening, through which the central axis extends. The electrically conductive casing element comprises at least a first and a second region. The first region is located closer to the central axis than the second region. The electrically conductive casing element is conical at least in part.

Abstract: A photoionization sensor assembly includes a housing defining a chamber with a first end and an opposing second end and being permeable to the analyte gas and non-analyte gases. A radiation source is structured to emit photons into the chamber. A first, second and third electrode are positioned in the chamber. The photons ionize the analyte gas, are insufficient to ionize the non-analyte gases, and causing ejection of photoelectrons from the third electrode. A controller is structured to receive a measurement of a total pressure and electrically bias the electrodes to collect the photoelectrons on the first and second electrodes in a ratio dependent on the total pressure. The controller is structured to determine the ratio of photoelectrons that are collected on the first and second electrodes at the total pressure and determine an amount of electrical current due to ionization by correcting the measured current using the determined ratio.

Abstract: A method for leak testing a test specimen includes the following steps: placing the test specimen in a test chamber, testing a leak-tightness of the test specimen in the test chamber, opening the test chamber and removing the test specimen if the leak test has determined that the test specimen is leak-tight, and blocking the test chamber from opening to prevent a removal of the test specimen if the leak test has determined a leak in the test specimen. A leak testing device includes a test chamber receiving the test specimen, a leak detector connected to the test chamber, and a blocking device.

Abstract: A gas-specific vacuum leak detector has a multi-stage vacuum pump and a gas-specific gas sensor. The gas sensor is an integral part of the vacuum pump and is thereby adapted to detect a specific gas within the vacuum pump.

Abstract: A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetically sealed via extends from the split-ring conductor to the second side of the support and connects to an electrical supply. A ground plane is formed on the second side of the support. A plasma is generated proximate to the first side of the support, and the support seals to a wall of the chamber such that the first side is exposed to the one or more gases inside the chamber and the second side is isolated from the plasma and the one or more gases inside of the chamber.

Abstract: A quartz crystal microbalance (QCM) sensor, comprises a sensor housing and a crystal component supported within the sensor housing. The crystal component includes a quartz crystal substrate and a gasket seal disposed about the periphery of the quartz crystal substrate configured to prevent ingress of fluids into the sensor housing.

Abstract: Chamber (11, 12, 13) for bounding a plasma generation area (42) in a vacuum pressure sensor (40), wherein the chamber comprises an electrically conductive casing element (1, 1?, 1?) located radially on the outside relative to a central axis, wherein the chamber comprises electrically conductive wall elements (2, 2?, 2?) arranged substantially perpendicular to the central axis and connected to the casing element, wherein at least one of the wall elements has a first opening (3), through which the central axis extends, wherein the casing element comprises at least a first (B1) and a second region (B2), wherein the first region is located closer to the central axis than the second region. The invention further relates to a vacuum pressure sensor comprising the chamber.

Abstract: In a leak detection device comprising a gas analyzer, a vacuum pump, a first gas inlet, and a second gas inlet, it is provided that a first multi-way valve is connected to a first inlet and at least a first and a second outlet, wherein the inlet is connected to the first gas inlet, a second multi-way valve is connected to first inlet and at least a first and a second outlet, wherein the inlet is connected to the second gas inlet, wherein the two first outlets of the two multi-way valves are connected to the gas analyzer, and the two second outlets of the two multi-way valves are connected to the vacuum pump.

Abstract: An electron bombardment ion source assembly for use in a mass spectrometer and including an anode extending along an axis and surrounding an ionization volume. At least two filaments are each configured to thermionically emit electrons and are positioned outside the ionization volume and proximate to the anode. The at least two filaments each comprise an elliptically-shaped portion and non-elliptical portions on either end of the elliptically-shaped portion. The non-elliptically-shaped portions are configured to be mounted in a fixed position relative to the anode to maintain a constant distance between the elliptically-shaped portion and the anode. The elliptically-shaped portion extends along a plane that intersects a plane perpendicular to the axis of the anode at a non-zero angle.

Abstract: An improved Quartz Crystal Microbalance (QCM) sensor and method for fabrication thereof by one of: (i) increasing the quantity of surface defects to the quartz crystal surface and (ii) an adsorption of non-metal and/or metalloid elements to the quartz crystal surface. The improved sensor, and the method for its fabrication, significantly improves the registration response of the QCM sensor from minutes to several seconds.

Abstract: A wide-range ion source for a mass spectrometer comprises a first portion and a second portion that is positioned downstream of the first portion. The first portion includes an anode and a first filament that is positioned proximate the anode and secured in place relative to the anode. The first filament is exposed to a pressure of a process chamber. A first electron repeller has at least a partially circular shape. The second portion includes a tubular anode, a second filament surrounding the tubular anode, an extraction lens defining an opening and a focus lens to conduct ions into a volume.

Abstract: A semiconductor fabrication system includes a mixing bowl, a distribution system receiving a mixture of gases from the mixing bowl, and a process chamber in fluid communication with the distribution system for performing a variety of semiconductor processes, e.g., deposition and etch processes, on a substrate. A plurality of mixing bowl sensors are disposed within a cavity of the mixing bowl and issue gas signals indicative of the type and flow-rate of the detected gas. Further, at least one process chamber sensor is provided within the process chamber and disposed proximal to the substrate. The process chamber sensor has a resonance property which changes upon exposure to the semiconductor process, i.e., a build-up of deposited material on a surface of the sensor, and issues material process signals indicative of the anticipated material on the surface of the substrate.

Abstract: A vacuum feedthrough (10) which is constructed in radial layers comprises the following elements (from inwards to outwards): —a lens element (11), —a first ring (12) made of glass, —a first hollow cylinder (13) made of a first dielectric material, —a first electrically conductive layer (18), —a second hollow cylinder (14) made of glass, —a third hollow cylinder (15) made of ceramic, —a second ring made of glass (16), and—a frame (17) made of metal. On the basis of the vacuum feedthrough, the invention additionally relates to an electrode assembly, to a device for generating a DBD plasma discharge, to a measuring device for characterizing a pressure and/or a gas composition, and to a method for operating the measuring device.

Abstract: The invention relates to a method 100 for determining a pressure in a vacuum system, wherein the method comprises the steps of: a) generating 101 a plasma in a sample chamber which is fluid-dynamically connected to the vacuum system and which is in electrical contact with a first electrode and a second electrode; b) measuring 102 a current intensity of an electrical current flowing through the plasma between the first electrode and the second electrode; c) measuring 103 a first radiation intensity of electromagnetic radiation of a first wavelength range which is emitted from the plasma, wherein the first wavelength range contains at least a first emission line of a first plasma species of a first chemical element; d) measuring 104 a second radiation intensity of electromagnetic radiation of a second wavelength range which is emitted from the plasma, wherein the second wavelength range contains a second emission line of the first plasma species of the first chemical element or of a second plasma species of