Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: The disclosure provides a gas detector with an ionizing device for producing ions depending on a gas to be detected. The gas detector includes a catcher for receiving the electrical current produced by the ions, and a measuring device with an electrical measuring resistor. The electrical measuring resistor produces an electrical measuring potential from the current and is surrounded, at least in part, by an electrical shield resistor, denoted by RT. The same potentials, up to a deviation of at most 25%, are applied in the longitudinal direction of the electrical measuring resistor to mutually opposed regions of the electrical measuring resistor and the electrical shield resistor.

Abstract: A method 14 for the controlled removal of a protective layer 3 from a surface of a component 10, wherein the component comprises: a base body 1; an intermediate layer 2, which at least partially covers the base body; and said protective layer 3, which comprises an amorphous solid, in particular an amorphous nonmetal, in particular amorphous ceramic, and at least partially covers the intermediate layer; wherein the method comprises the following steps: bringing 11 the protective layer 3 into contact with an etching or solvent medium 4; and removing 12 the protective layer 3 under the action of the etching or solvent medium 4 until the intermediate layer 2 is exposed; and wherein the etching or solvent medium causes a first etching or dissolving speed of the protective layer and a second etching or dissolving speed of the intermediate layer and wherein the first etching or dissolving speed is greater than the second etching or dissolving speed.

Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: A time-of-flight mass spectrometer assembly includes a flange with a vacuum chamber facing surface and an environment facing surface. The flange defines an opening that extends between the vacuum chamber facing surface and the environment facing surface. A plurality of stacked components are supported by the vacuum chamber facing surface of the flange. A secondary flange is removably secured within the opening of the flange. The secondary flange includes a vacuum chamber facing surface and an environment facing surface. A supported spectrometer component is supported by the vacuum chamber facing surface of the secondary flange such that removal of the secondary flange from the flange acts to remove the supported component from the plurality of stacked components supported by the vacuum chamber facing surface of the flange.

Abstract: In a method for the detection of gas using a gas-selective membrane, a temperature device that is designed to change the temperature of the membrane, and a detector that is designed to acquire a measurement signal on the basis of the amount of gas passing through the membrane, provision is made for the following steps: changing the temperature of the membrane using the temperature device, acquiring at least one first measuring value (Hn, Hn+1, Hn+2) using the detector at a time at which the membrane temperature adopts a first temperature value, acquiring at least one second measuring value (Ln, Ln+1) using the detector at a time at which the membrane temperature adopts a second temperature value different from the first temperature value, calculating the difference between the two measuring values, and using the difference to assess whether a gas to be detected is present.

Abstract: An ion source assembly for use in a mass spectrometer comprises a first anode defining a first ionization volume and a first electron source positioned proximate the first anode and configured to generate electrons that pass through the first anode and into the first ionization volume. The ions source assembly further includes a second anode defining a second ionization volume and a second electron source positioned proximate to the second anode and configured to generate to generate electrons that pass through the second anode and into the second ionization volume. At least one optical element is positioned proximate the first ionization volume and defines an aperture. The first and second anodes and the first and second ionization volumes are positioned along an ion optical axis of the mass spectrometer, and the first anode is positioned between the second anode and the aperture.

Abstract: A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.

Abstract: A method for testing a test specimen for the presence of a leak using a film chamber for accommodating the test specimen, wherein the film chamber comprises walls enclosing a film chamber volume, which walls include at least one flexible wall area, comprising the steps of: placing the test specimen into the film chamber, and closing the film chamber, characterized in that complete closing of the film chamber is determined on the basis of the signal of a position measuring device which detects the relative position of the film chamber walls with respect to each other.

Abstract: A gas analyzer and a method for performing mass spectrometry analysis includes a membrane configured to receive an input flow of carrier gas. The membrane defines a variable thickness region between first and second positions along an input face of the membrane and separates the analyte sample into an output flow of analyte molecules. A mass spectrometer is disposed downstream of the membrane and includes an input orifice for receiving the output flow. The mass spectrometer is configured to perform a response profile analysis of the analyte molecules in the sample analyte.

Abstract: A method for determining the relative orientation of a gas leak relative to a sniffer leak detector includes a handpiece with a sniffer probe and a test gas inlet, a reference gas inlet disposed at the handpiece remote from the test gas inlet, a gas analyzer, and a switching valve. The switching valve is configured to alternately connect the test gas inlet and the reference gas inlet with the gas analyzer. Either gas is analyzed by the gas analyzer. Steps include supplying gas sucked in through the test gas inlet to the gas analyzer, determining the test gas concentration, switching the switching valve, supplying gas sucked in through the reference gas inlet to the gas analyzer, analyzing the test gas concentration, forming a differential signal, changing the spatial orientation of the handpiece, repeating the first through sixth steps, and determining whether the differential signal has changed.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: An ion source assembly for use in a mass spectrometer comprises a first anode defining a first ionization volume and a first electron source positioned proximate the first anode and configured to generate electrons that pass through the first anode and into the first ionization volume. The ions source assembly further includes a second anode defining a second ionization volume and a second electron source positioned proximate to the second anode and configured to generate to generate electrons that pass through the second anode and into the second ionization volume. At least one optical element is positioned proximate the first ionization volume and defines an aperture. The first and second anodes and the first and second ionization volumes are positioned along an ion optical axis of the mass spectrometer, and the first anode is positioned between the second anode and the aperture.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: Method for testing a test piece for the presence of a leak using a foil chamber, wherein the foil chamber has walls having at least one flexible wall region to which a measurement volume adjoins and is arranged on that side of the flexible wall region opposite the foil chamber volume and is hermetically separated from the foil chamber volume, having the following steps: placing the test piece in the foil chamber, closing the foil chamber, evacuating the foil chamber and monitoring the measurement volume during evacuation of the foil chamber, using the result of the monitoring to reach a conclusion regarding the magnitude of a leak, characterized in that a venting valve connecting the measurement volume to the atmosphere is closed when the pressure in the measurement volume is below a predefined threshold value, and is opened as soon as the pressure exceeds the threshold value.

Abstract: Methods and systems for chemical analysis. For instance, a device for chemical analysis of a sample includes a housing, an inlet, a pump, multiple membranes and at least one detector. The housing contains an interior chamber of the device. The inlet on the housing introduces the sample into the interior chamber. The pump is connected to the housing to form a partial vacuum in the interior chamber. The multiple membranes have different response times to different constituents of the sample. The multiple membranes include at least a first membrane and a second membrane. The multiple membranes have different response times to different constituents of the sample. The detector is for detecting the different constituents of the sample after interaction with the multiple membranes. In addition, a method for chemical analysis of a sample. A first step includes introducing a sample to multiple membranes having different response times to different constituents of the sample.

Abstract: Disclosed is a connecting device for connecting a gas sensor to a gas leak detector. The gas sensor includes an elongate sensor housing. The gas leak detector includes at least one gas connector adapted to be connected to the gas sensor. A guide rail connects to the gas leak detector, engaging with the sensor housing such that the gas connectors engage with at least one complementary second gas connector. A fastening claw includes two elastic spring legs arranged at one of the sensor housing and the gas leak detector. Each of the two spring legs includes a latching boss engaging the frontal end of the gas sensor opposite the second gas connector and a spreading element having two retaining arms. Each retaining arm includes a pulling edge, an inclined insertion portion along which the latching boss grips and pivots the spring leg, and an inclined disengagement portion.

Abstract: A method for distinguishing a test gas escaping from a leak in a test object (21) from an interfering gas in the environment of the test object (21) during sniffing leak detection, having the steps: suctioning gas from the environment of the test object (21) in the region of the outer surface of the test object by means of a sniffing tip, which has a suction opening (14), which is connected, for gas conduction, to a sensor (18), which is designed to determine the test gas partial pressure of the test gas in the suctioned gas flow; varying, with periodic repetition, the flow intensity of the suctioned gas flow; setting a total pressure of the suctioned gas at the sensor (18) of at least 80 percent of the total pressure of the gas in the atmosphere (23) surrounding the test object (21); avoiding fluctuations of the total pressure of the suctioned gas at the sensor (18) of more than 10 percent; measuring the test gas partial pressure of test gas contained in the suctioned gas flow by means of the sensor (18); in

Abstract: A method for performing a leak-tightness test on a test object (16) in a foil chamber (10) which has at least one flexible wall region (12, 14), having the steps: using a gas or gas constituent contained in the test object as test gas for the leak-tightness test, introducing the test object into the foil chamber, evacuating the foil chamber to a pressure lower than the test gas pressure within the test object and than atmospheric pressure, introducing a carrier gas into the foil chamber into the region outside the test object, and measuring the test gas concentration of the gas mixture that forms in the foil chamber in the region outside the test object.