Abstract: Method and apparatus for semiconductor device fabrication using a reconstituted wafer is described. In one embodiment, diced semiconductor chips are placed within openings on a frame. A reconstituted wafer is formed by filling a mold compound into the openings. The mold compound is formed around the chips. Finished dies are formed within the reconstituted wafer. The finished dies are separated from the frame.

Abstract: The disclosure relates to methods and systems for trace solutions in a computer processing system. More specifically, the disclosure relates to methods and systems for a multi-tier trace architecture. A method for separating raw trace data includes receiving raw trace data from one of more CPUs and/or busses in the system, separating the raw trace data into high bandwidth trace information (HBTI) and low bandwidth trace information (LBTI), recording the HBTI on an on-chip trace buffer until a specific event is triggered, and providing in parallel the LBTI over an off-chip trace interface. In one embodiment, the raw trace data are provided to a separate HBTI trace unit and a separate LBTI respectively. The HBTI trace unit processes the HBTI and generates a HBTI message, and the LBTI trace unit processes the LBTI and generates a LBTI message.

Abstract: A semiconductor device has a source metallization, drain metallization, and semiconductor body. The semiconductor body includes a drift layer of a first conductivity contacted with the drain metallization, a buffer (and field-stop) layer of the first conductivity higher in maximum doping concentration than the drift layer, and a plurality of compensation regions of a second conductivity, each forming a pn-junction with the drift and buffer layers and in contact with the source metallization. Each compensation region includes a first portion between a second portion and the source metallization. The first portions and the drift layer form a first area having a vanishing net doping. The second portions and the buffer layer form a second area of the first conductivity. A space charge region forms in the second area when a reverse voltage of more than 30% of the device breakdown voltage is applied between the drain and source metallizations.

Abstract: In an embodiment, a method of testing a radio frequency integrated circuit (RFIC) includes generating high frequency test signals using the on-chip test circuit, measuring signal levels using on-chip power detectors, and controlling and monitoring the on-chip test circuit using low frequency signals. The RFIC circuit is configured to operate at high frequencies, and an on-chip test circuit that includes frequency generation circuitry configured to operate during test modes.

Abstract: A processor arrangement is provided. The processor arrangement includes: a first processor; a plurality of second processors, each second processor including a bit-mask generator configured to generate a processor-specific bit-mask sequence; wherein the first processor includes a bit-mask generator configured to generate the processor-specific bit-mask sequences of the second processors; wherein the first processor is configured to bit-mask a data bit sequence to be transmitted to one second processor of the plurality of second processors using a processor-specific bit-mask sequence specific to the one second processor, to thereby generate a processor-specific bit-masked data sequence to be transmitted to the one second processor.

Abstract: In accordance with an embodiment of the present invention, a semiconductor device has a substrate having a first surface and a second surface opposite the first surface. Also, the substrate has a first hole. A plurality of leads is disposed over the first surface of the substrate and a die paddle is disposed in the first hole. Additionally, an encapsulant is disposed on the die paddle and the plurality of leads.

Abstract: A magnetic-field sensor and a method of calibrating a magnetic-field sensor are disclosed. In one embodiment the method includes supplying the measurement arrangements with an excitation signal to generate a tappable measuring signal at each measurement tap of the measurement arrangements, detecting the measuring signals, evaluating the detected measuring signals by comparing the detected measuring signals with a comparison value, determining the measurement arrangement with a smallest difference, in terms of magnitude, between the detected measuring signals and the comparison value, and choosing the measurement arrangement with the smallest difference for a measurement operation of the magnetic-field sensor. The magnetic-field sensor includes a plurality of magnetoresistive sensor elements connected to form measurement arrangements each measurement arrangement including a measurement tap, wherein the magnetoresistive sensor elements are laterally distributed on a chip of the magnetic field sensor.

Abstract: A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone.

Abstract: An integrated circuit as described herein includes an upper interconnect level including a continuous upper interconnect area, the continuous upper interconnect area including a plurality of upper contact openings. The integrated circuit further includes a lower interconnect level including a continuous lower interconnect area, the continuous lower interconnect area including a plurality of lower contact openings. First contacts extend through the lower contact openings to the upper interconnect area and second contact openings extend through the upper contact openings to the lower interconnect area.

Abstract: A semiconductor device includes a workpiece and a first material layer disposed over the workpiece. The first material layer has a first number of atoms at a surface. A seed layer is disposed over the first material layer. The seed layer includes a chemisorbed monolayer of a second number of atoms at the surface having a surface coverage of at least 0.5 such that the ratio of the number of first atoms at the surface to the number of second atoms at the surface is no more than 2:1. The second atoms of the seed layer include oxygen or nitrogen.

Abstract: A method for manufacturing a metal pad structure of a die is provided, the method including: forming a metal pad between encapsulation material of the die, wherein the metal pad and the encapsulation material are separated from each other by a gap; and forming additional material in the gap to narrow at least a part of the gap.

Abstract: A module including a micro-electro-mechanical microphone is disclosed. One embodiment provides a substrate having a trough-shaped depression and a micro-electro-mechanical microphone. The micro-electro-mechanical microphone is mounted into the trough-shaped depression of the substrate.

Abstract: Semiconductor devices, capacitors, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a capacitor includes forming a first material over a workpiece, and patterning the first material, forming a first capacitor plate in a first region of the workpiece and forming a first element in a second region of the workpiece. A second material is formed over the workpiece and over the patterned first material. The second material is patterned, forming a capacitor dielectric and a second capacitor plate in the first region of the workpiece over the first capacitor plate and forming a second element in a third region of the workpiece.

Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.

Abstract: A pulse-width modulator (PWM) includes a plurality of comparators for comparing an input signal with a plurality of reference signals and for providing a plurality of corresponding comparison signals. The pulse-width modulator also includes a combinational logic for receiving the plurality of comparison signals and for generating a plurality of binary pulse-width modulation signals on the basis of the plurality of comparison signals. At most only a currently selected binary pulse-width modulation signal of the binary pulse-width modulation signals is at a first signal level at a time. The currently selected binary pulse-width modulation signal is associated to a specific reference signal of the plurality of reference signals which is currently closest to the input signal among the plurality of reference signals in terms of a given amplitude relation between the plurality of reference signals and the input signal.

Abstract: In accordance with an embodiment of the present invention, a semiconductor module includes a first semiconductor device having a first plurality of leads including a first gate/base lead, a first drain/collector lead, and a first source/emitter lead. The module further includes a second semiconductor device and a circuit board. The second semiconductor device has a second plurality of leads including a second gate/base lead, a second drain/collector lead, and a second source/emitter lead. The circuit board has a plurality of mounting holes, wherein each of the first plurality of leads and the second plurality of leads is mounted into a respective one of the plurality of mounting holes. At the plurality of mounting holes, a first distance from the first gate/base lead to the second gate/base lead is different from a second distance from the first source/emitter lead to the second source/emitter lead.

Abstract: In accordance with an embodiment, a method of calibrating a circuit includes coupling a first reference voltage to a first input of the circuit, coupling a programmable reference voltage to a reference node of a digital-to-analog converter (DAC), such that the gain of the DAC is dependent on an input value at the reference node. The method further includes providing a first predetermined input code to the DAC, summing an output of the DAC with the first reference voltage to produce a summed output, comparing the summed output to a threshold, and adjusting the programmable reference voltage until the summed output is within a predetermined range of the threshold.

Abstract: A method for manufacturing a chip arrangement in accordance with various embodiments may include: placing a chip on a carrier within an opening of a metal structure disposed over the carrier; fixing the chip to the metal structure; removing the carrier to thereby expose at least one contact of the chip; and forming an electrically conductive connection between the at least one contact of the chip and the metal structure.

Abstract: A semiconductor device includes a chip, at least one element electrically coupled to the chip, an adhesive at least partially covering the at least one element, and a mold material at least partially covering the chip and the adhesive.

Abstract: An embodiment discloses a sensor arrangement comprising disc shaped structure with a plurality of magnetic elements which are at least provided on end faces of the disc shaped structure. The sensor arrangement includes a hollow disc structure, the hollow disc structure comprising two end faces, wherein each of the two end faces of the second structure comprises a plurality of teeth spaced apart from each other, the teeth on the two end faces are arranged in opposing positions. Teeth on a respective same end face of the hollow disc structure are spaced from each other. The disc shaped structure is rotatable with respect to the hollow disc structure. A magnetic field sensor is provided to sense a magnetic field generated by the plurality magnetic elements.