Abstract: Embodiments provide a method for removing a dielectric layer from a bottom of a trench while maintaining the dielectric layer on sidewalls of the trench. The method includes etching the dielectric layer at the bottom of the trench and generating a passivation layer on the dielectric layer at an upper portion of the trench by adjusting the conditions of a plasma etch process to a first mode; and a step of etching the dielectric layer at the bottom of the trench and etching the passivation layer at the upper portion of the trench by adjusting the conditions of the plasma etch process to a second mode before the dielectric layer at the bottom of the trench is completely removed.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a substrate having a first major surface and an opposite second major surface. A first chip is disposed in the substrate. The first chip includes a plurality of contact pads at the first major surface. A via bar is disposed in the substrate. An antenna structure is disposed within the via bar.

Abstract: Representative implementations of devices and techniques provide improved thermal performance of a chip die disposed within a layered printed circuit board (PCB). Passive components may be strategically located on one or more surfaces of the PCB. The passive components may be arranged to conduct heat generated by the chip die away from the chip die.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a semiconductor chip and a bump. The semiconductor chip has a contact pad on a major surface. The bump is disposed on the contact pad of the semiconductor chip. A solder layer is disposed on sidewalls of the bump.

Abstract: A method for resetting a so-called System on Chip SoC is described as well as a system adapted and configured to perform the method. A reset signal applied to the SoC resets the system but at the same time prevents loss and corruption of data that was processed at the time of signal application.

Abstract: A method for manufacturing an embedded chip package is provided. The method may include: forming electrically conductive lines over a substrate; placing the substrate next to a chip arrangement comprising a chip, the chip comprising one or more contact pads, wherein one or more of the electrically conductive lines are arranged proximate to a side wall of the chip; and forming one or more electrical interconnects over the chip arrangement to electrically connect at least one electrically conductive line to at least one contact pad.

Abstract: In various embodiments a method is provided for determining a demagnetization zero current time for a switched mode power supply having a transformer, a first side and a second side being galvanically separated from each other and a switched mode power supply controller, the method including: determining a first voltage being applied to one side of the transformer; determining a second voltage provided at the other side of the transformer; determining a time the first voltage is provided to a winding of the transformer; and determining, by a circuit located on the same side of the transformer as the switched mode power supply controller, the demagnetization zero current time using the determined first voltage, the determined second voltage and the determined time.

Abstract: Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.

Abstract: In various embodiments a method for determining a demagnetization zero current time, at which a transformer is substantially demagnetized, for a switched mode power supply comprising a transformer is provided, wherein the method may include: applying a first current through a winding of one side of the transformer; interrupting the current flow of the first current; measuring a time at which a voltage across a winding of another side of the transformer becomes substantially zero; and determining the demagnetization zero current time using the measured time.

Abstract: Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.

Abstract: In accordance with an embodiment of the present invention, a semiconductor device includes a lead frame having a die paddle and a lead. A chip is disposed over the die paddle of the lead frame. The semiconductor device further includes a clip, which is disposed over the chip. The clip couples a pad on the chip to the lead of the lead frame. The clip also includes a heat sink.

Abstract: A chip arrangement is provided. The chip arrangement includes: a first chip electrically connected to the first chip carrier top side; a second chip electrically connected to the second chip carrier top side; and electrically insulating material configured to at least partially surround the first chip carrier and the second chip carrier; at least one electrical interconnect configured to electrically contact the first chip to the second chip through the electrically insulating material; one or more first electrically conductive portions formed over and electrically contacted to at least one of the first chip carrier top side and second chip carrier top side, and one or more second electrically conductive portions formed over and electrically contacted to at least one of the first chip carrier bottom side and second chip carrier bottom side.

Abstract: According to one embodiment, a die package is provided comprising a first die structure with a first plurality of switching elements wherein controlled current input terminals of the first plurality of switching elements are electrically coupled by a common contact region and wherein controlled current output terminals of the first plurality of switching elements are insulated from each other; a second die structure with a second plurality of switching elements wherein controlled current output terminals of the second plurality of switching elements are coupled by a common contact region and wherein controlled current input terminals of the second plurality of switching elements are insulated from each other; and wherein, for each of the first plurality of switching elements, the output terminal of the switching element is coupled with the input terminal of at least one switching element of the second plurality of switching elements.

Abstract: A device for generating a session key which is known to a first communication partner and a second communication partner, for the first communication partner, from secret information which may be determined by the first and second communication partners, includes a first module operable to calculate the session key using a concatenation of at least a part of a random number and a part of the secret information. The device also includes a second module operable to use the session key for communication with the second communication partner.

Abstract: In one implementation an output signal of an oscillator is varied to be within a desired frequency band with respect to a reference signal, the output signal having a plurality of phases. The implementation may include comparing the output signal with the reference signal, counting falling edges about each phase of the number of phases in a predetermined time period and summing to define a count output; comparing the count output with a product of the number of phases of the output signal and the factor to define a comparison, generating a control signal based upon the comparison, and inputting the control signal to the oscillator to alter the output signal thereof.

Abstract: A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.

Abstract: Micro-electromechanical system (MEMS) substrates, devices, and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a workpiece having an isolation ring in a top portion thereof, and a moveable element disposed within the isolation ring.

Abstract: An integrated circuit includes a semiconductor die including a first magnetic field sensor. The integrated circuit includes an isolation material layer over the first magnetic field sensor and a sintered metal layer over the isolation material layer. The first magnetic field sensor is configured to sense a magnetic field generated by a current passing through the sintered metal layer.

Abstract: An electronic component and method of making an electronic component is disclosed. In one embodiment, the electronic component includes a frame having a base layer, a first layer, a second layer including palladium placed on the first layer, and a third layer including gold placed on the second layer. A semiconductor chip is positioned on the frame.

Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.