Abstract: The present invention relates to a cesium borosilicate compound, a nonlinear optical crystal of cesium borosilicate, and a preparation method therefor and a use thereof. The cesium borosilicate compound has a chemical formula of Cs2B4SiO9 and a molecular weight of 481.15, and is prepared using a solid phase method. The nonlinear optical crystal of the cesium borosilicate compound has a chemical formula of Cs2B4SiO9 and a molecular weight of 481.15, does not have a center of symmetry, belongs to the tetragonal system with space group I4 and unit-cell parameters a=6.731(3) ?, c=9.871(9) ? and V=447.2(5) ?3, and has a wide transmittance range. The shortest ultraviolet cutoff edge is smaller than 190 nm, the frequency doubling effect of the crystal is 4.6 KDP, and the crystal is grown by a high-temperature solution spontaneous crystallization method and a flux method.

Abstract: A method for preparing stably dispersed cellulose nanofibers comprises the following steps: 1) mixing cellulose and an organic solvent, the percentage of the cellulose being 1% to 15% in weight; 2) adding an esterification agent into the resultant mixture of step 1), the molar ratio of the esterification agent to the cellulose being from 1:0.1 to 4; and 3) physically breaking the resultant mixture of step 2) until a suspension liquid with stably dispersed cellulose nanofibers of 2-1000 nm in diameter and 10-100 ?m in length is obtained, an esterification reaction of hydroxyl group(s) on the surface of cellulose fibers occurring at the time of the breaking. Also disclosed are dispersed cellulose nanofibers with improved compatibility to the matrix than the untreated cellulose and an improved strength of the composite materials.

Abstract: The present invention relates to a barium tetraborate compound and a barium tetraborate non-linear optical crystal, and a preparation method and use thereof, wherein the chemical formulae of the barium tetraborate compound and the non-linear optical crystal thereof are both BaB4O7, with a molecular weight of 292.58; the barium tetraborate non-linear optical crystal has a non-centrosymmetric structure, which belongs to a hexagonal system, and has a space group P65 and lattice parameters of a=6.7233(6) ?, c=18.776(4) ?, V=735.01(17) ?3, and Z=6, wherein the powder frequency-doubled effect thereof is two times that of KDP (KH2PO4), and the ultraviolet cut-off edge is lower than 170 nm.

Abstract: The micropump includes continuous cylindrical separating pipes having at least two alternating stages of pipes of small radius and large radius connected in succession. Each pipe of a large radius has one end as a hot zone, and the opposite end as a cold zone. The pipes alternate straight pipes with a large radius and U-shaped curved pipes with a small radius. The relationship of the large radius (R) to the small radius (r) is in a range of R/r=2 to 10000, while the relationship of the temperature (T2) of a hot zone to the temperature (T1) of a cold zone is T2/T1=1.1 to 3.0. The length and radius measurements of a straight pipe and a U-shaped pipe ensure a given change in temperature of the gas from the temperature of the hot zone to the temperature of the cold zone.

Abstract: A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.

Abstract: Provided area deep ultraviolet non-linear optical crystal of barium borate hydrate, a preparation method therefor and the use thereof. The chemical formula of the crystal is Ba2B11O22H7, belonging to monoclinic system, with the space group thereof being P21, the crystal cell parameters thereof being a=6.7719(10) ?, b=21.1195(4) ?, c=6.8274(10) ?, ?=119.3950(10) °, and the molecular weight thereof being 752.65. The non-linear optical crystal of borate is obtained by means of programmed cooling or natural cooling using a hydrothermal method. The crystal powder has a frequency-doubled effect of about 2 times that of KDP (KH2PO4) and an ultraviolet cut-off edge of below 175 nm and can be used as a deep ultraviolet non-linear optical crystal. The growth process of the crystal has advantages such as simple, a low cost, a low toxicity, a short growth cycle, stable physical and chemical properties, etc.

Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

Abstract: A measuring whispering-gallery-mode resonator includes: a dielectric resonating body with a rotation axis, a superconducting sample under test mounted to the resonating body and a coupling unit for coupling a measuring waveguide with the resonating body. One side of the resonating body connected with the coupling unit has a first endplate, in which m coupling holes penetrate through the first endplate, and centers of the m coupling holes are arranged to be evenly spaced along a circle whose center is on the rotation axis. The coupling unit has a feeder line which is a coaxial waveguide, and an axis of the coaxial waveguide coincides with the rotation axis. One end surface of the coaxial waveguide, which is perpendicular to the rotation axis, abuts the first endplate; and the azimuth index of operated whispering gallery mode in the resonator is an integer multiple of the number m of the coupling holes.

Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

Abstract: A band-pass filter having a body, a rectangular waveguide, and a dielectric insert, the dielectric insert has a dielectric plate and a high temperature superconductive film in line with a plurality of rectangular windows of the same height. The waveguide has a×b cross-section, a being length of the long side walls and b the length of the short side walls. Each long side wall has a fixing groove at the central portion and a rectangular recess in the fixing groove. The dielectric plate has two ends in the fixing grooves and is symmetric with a perpendicular bisecting plane of the long side wall. The rectangular recess is symmetric to the perpendicular bisecting plane and has the same length as that of the waveguide, with its width w satisfying t<w<a/2, and depth d satisfying d<?/4, t being total thickness of the dielectric plate and the high temperature superconductive film, and ? the wavelength of the central frequency of the pass-band of the band-pass filter.

Abstract: A type of High Magnetic Field Assisted PLD System consisting of pulsed laser and PLD cylindrical vacuum chamber inclusive of double-layer clip-sheath cylindrical chamber with water cooling located in the bore hole of superconducting magnet is disclosed. A flange plate in one side of the double-layer clip sheath is equipped with substrate heating table or laser heating table and rotating mechanism; the flange plate in another side is equipped with target components and moving/rotating mechanism. Either the substrate heating table or laser heating table is located in the center area of magnetic field of the superconducting magnet. A PLD (pulsed laser deposition) cylindrical vacuum chamber is located in the slide rail. A sealed laser leading-in chamber and a vacuum-sealed video-unit leading-in chamber is installed on the flange plate in one side of double-layer clip sheath cylindrical chamber.

Abstract: Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam (12) at a frequency to generate at least a light beam (16) at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal (13). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 ?m and 6.6-7.08 ?m), a relatively great 2nd-order nonlinear optical coefficient (d15=6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 Wm?1K?1), and a high chemical stability.

Abstract: A preparation method and application of a Na3Ba2(B3O6)2F birefringent crystal, the crystal having a chemical formula of Na3Ba2(B3O6)2F, and belonging to a hexagonal crystal system, the space group being P63/m, and the lattice parameters comprising a=7.3490(6) ?, c=12.6340(2) ?, V=590.93(12) ?3, Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, ne<no, the transmission range being 175-3,350 nm, the birefringence of 0.090 (3,350 nm)-0.240 (175 nm), and the crystal being grown by employing a melting method or a flux method; the crystal prepared via the method has a short growth cycle, high crystal quality and large crystal size, is easy to grow, cut, polish and store, is stable in the air, and difficult to deliquesce, and can be used for preparation of various polarization beam polarization beam splitter prism and infrared/deep ultraviolet waveband optical communication elements.

Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.

Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

Abstract: A differential polarization interferometer is provided. An interferometer performs direct measurement of phase shift of a light wave passed under an arbitrary angle through a sample composed of a transparent substrate holding a thin deposited test film, for metamaterial testing. An example apparatus has a laser source and a first polarizer, and two optically connected arms. A first arm creates orthogonally polarized components of a single output beam for a broadband non-polarizing beam splitter. A second arm has a controllable phase retarder to introduce a phase shift into one polarization component of the reflected single output beam, and a second polarizer to equalize and mix the polarization components of the reflected single output beam. This transforms the reflected single output beam into a beam resulting from interference of polarization components of the reflected single output beam. A photodetector transforms an intensity of the beam into an electric signal for output.

Abstract: A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.

Abstract: Construction of hyperbolic metamaterial for electromagnetic radiation in an optical spectral range is described. Example processes relate to the technical art of metamaterials of the optical region of wavelengths and can be applied for creation of artificial materials changing the features in optical region of wavelengths. An example process widens the working region of wavelengths due to periodic system of nanorods in a definite range of diameters and heights. An example construction is fulfilled of aluminum oxide ceramics with periodic system of nanoholes with the diameters from 30 till 50 nm are filled with the particles of noble metals forming metal nanorods with the height from 3 till 10 diameters of pores from the side of the surface of dielectric substrate turned toward the source of electromagnetic radiation. To provide mechanical strength the thickness of the substrate should be not less than 30 ?m.

Abstract: The present invention relates to a borate birefringent crystal applicable to ultraviolet (UV) or deep ultraviolet (DUV) range, with chemical formula of Ba2Mg(B3O6)2. The borate birefringent crystal belongs to a trigonal system, with space group of R-3 wherein a=0.70528(3) nm, c=1.65520(9) nm and Z=12. The barium magnesium borate birefringent crystal is negative uniaxial (ne<no) with a birefringence of 0.077-0.229 and a transmission range of 177-3000 nm. The crystal is easy to cut, grind, polish, and preserve, and is stable in air and is not easy to deliquesce. The barium magnesium borate birefringent crystal can be grown by the Czochralski method, flux method or the method of spontaneous crystallization from a melt, and has larger birefringence (no?ne=0.077-0.229). The crystal has important applications in the fields of optics and communications, e.g. for fabricating the polarizing beam splitter prism.

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm?2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.