Abstract: The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Abstract: A nanocrystal memory element and a method for fabricating the same are proposed. The fabricating method involves selectively oxidizing polysilicon not disposed beneath and not covered with a plurality of metal nanocrystals, and leaving intact the polysilicon disposed beneath and thereby covered with the plurality of metal nanocrystals, with a view to forming double layered silicon-metal nanocrystals by self-alignment.

Abstract: The invention provides methods of screening to identify compounds that modulate the ability of a protein to translocate to the mitochondria when a cell is subjected to cellular stress. Such compounds can be useful to modulate the level of apoptosis in a cell. For example, compounds identified according to the methods described herein can be used to treat disorders characterized by excessive apoptosis, e.g., a neurological disorder, or insufficient apoptosis, e.g., cancer.

Abstract: Novel structural forms of T cell costimulatory molecules are described. These structural forms comprise a novel structural domain or have a structural domain deleted or added. The structural forms correspond to naturally-occurring alternatively spliced forms of T cell costimulatory molecules or variants thereof which can be produced by standard recombinant DNA techniques. In one embodiment, the T cell costimulatory molecule of the invention contains a novel cytoplasmic domain. In another embodiment, the T cell costimulatory molecule of the invention contains a novel signal peptide domain or has an immunoglobulin variable region-like domain deleted. The novel structural forms of T cell costimulatory molecules can be used to identify agents which stimulate the expression of alternative forms of costimulatory molecules and to identify components of the signal transduction pathway which results in costimulation of T cells.

Abstract: High-speed optoetectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

Abstract: A field emission device (FED) includes a top substrate having a fluorescent layer and an anode electrode, a bottom substrate, at least one cathode electrode having a platform and at least one protrusion, an insulating layer having an opening-pattern or groove-pattern, at least one gate layer located on the insulating layer, and an electron emitter located on the protrusion of the cathode electrode, where the electron emitter can act as side emission of electrons. Each of the platform and the protrusion have a height different from each other, and that the protrusion is located in the opening of the insulating layer. Through the structure illustrated above, uniformity of emitting electron density can be improved and brightness and contrast of color for the FED can be enhanced.

Abstract: A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.

Abstract: Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device including an element including at least a portion of the monocrystalline silicon layer.

Abstract: The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.

Abstract: An optical signal optical path switching method comprising steps of using a thermal lens based on a distribution of refractive index produced reversibly caused by temperature increase generated in an area of the light-absorbing layer film of thermal lens forming devices 1, 2 and 3, that has absorbed control light beams 121, 122 and 123, and in the periphery thereof, causing the converged signal light beam to exit from the thermal lens forming device with an ordinary divergence angle when the control light beams 121, 122 and 123 have not been irradiated and no thermal lens has been formed, and causing the converged signal light beam to exit from the thermal lens forming device with a divergence angle larger than the ordinary divergence angle when the control light beams have been irradiated and a thermal lens has been formed, and causing the signal light beam to travel straight through holes 61, 62 and 63 of mirrors provided with the holes for the signal light beam to pass through when the control light beams

Abstract: Voltage applying means applies a pulse voltage between a nozzle and a substrate, the nozzle having a diameter ranging from 0.01 ?m to 25 ?m, an upper limit voltage (10) of the pulse voltage being equal to or greater than a discharge-inducing minimum voltage (30), that is a voltage required to start discharge of fluid. A lower limit first voltage (20a) is provided immediately before a rise of the pulse voltage, the lower limit first voltage (20a) having a same polarity as that of the upper limit voltage (10), an absolute value of the lower limit first voltage (20a) being set smaller than the discharge-inducing minimum voltage (30). A lower limit second voltage (20b) is provided immediately after a rise of the pulse voltage, the lower limit second voltage (20b) having an opposite polarity as that of the upper limit voltage (10), an absolute value of the lower limit second voltage (20b) being set smaller than the discharge-inducing minimum voltage (30).

Abstract: Aspects of the invention disclosed herein relate to devices that provide heat and/or ultraviolet light to fingernails or toenails that are afflicted by onychomycosis, as well as methods for treating onychomycosis by application of heat and/or ultraviolet light. The devices of the present invention may be used in connection with systemic and/or topical anti-fungal agents to treat onychomycosis.

Abstract: Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure also includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device comprising an element including at least a portion of the monocrystalline silicon layer.

Abstract: The present invention relates to a method for comparing and determining the gene expression level, which is very important in disease-related gene screening, early clinical diagnosis and medicine development. The present invention utilizes quantitative characteristics of bioluminescence analysis to compare gene expression levels of different individuals or samples in order to search for disease-related genes. The specific steps include: (i) labeling the mRNA of a given gene from different sources through a suitable method, and mixing the labeled fragments to obtain PCR templates; (ii) performing a polymerase chain reaction using source-specific primers and a gene-specific primer; and (iii) detecting the sequence of the amplified DNA fragments by bioluminescence analysis, the base sequence in the sequencing profile representing the gene source, and the signal intensity of each base representing the gene expression level from the corresponding source.

Abstract: A gene construct incorporating any of at least two luciferase genes which emit lights with different colors using an identical substrate such that the gene can be stably expressed in mammalian cells.

Abstract: A communication initialization method at a MAC layer in a CR wireless communication system is provided. The use or non-use of a frequency band is sensed over a broadband with a minimized sensing time in a non-interfering manner with existing communication systems.

Abstract: A nanocrystal memory element and a method for fabricating the same involves repeatedly and alternately depositing, by atomic layer deposition, conductive layers and dielectric layers on a substrate with a tunnel oxide layer formed thereon, forming multiple layers of nanocrystal groups as a result of crystallization of conductive layers in a rapid thermal annealing process, and forming a gate on the top dielectric layer. The nanocrystal groups disposed at any two neighboring levels are separated by one dielectric layer, thus a plurality of nanocrystals formed in an integration layer are disposed at the same level. Barrier widths between a channel and the nanocrystals of the nanocrystal groups disposed at the same level are equal. Therefore, the nanocrystals at the same level are subjected the same electric field when voltage is applied to the gate, resulting in improved transistor performance, enhanced control of threshold voltage, and avoidance of over-erasing.

Abstract: The invention relates, in part, to monovalent avidin and streptavidin compositions. The invention also relates to methods of preparing and using monovalent avidin and streptavidin compositions. In some aspects of the invention, the compositions are monovalent avidin or monovalent streptavidin with a single femtomolar biotin-binding site.

Abstract: High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

Abstract: A method for converting source data to a channel-modulated signal having a plurality of pairs of in-phase (I) and quadrature-phase (Q) data in a mobile station, wherein the mobile station uses at least one channel, includes the steps of: a) encoding the source data to generate at least one data part and a control part; b) generating at least one spreading code to be allocated to the channel, wherein each spreading code is selected on the basis of a data rate of the data part and the control part and spreading codes are selected so that two consecutive pairs of the I and Q data are correspondent to two points located on same point or symmetrical with respect to a zero point on a phase domain; and c) spreading the control part and the data part by using the spreading code, to thereby generate the channel-modulated signal. The method is capable of improving a power efficiency of a mobile station by reducing a peak-to-average power ratio in a mobile communication system.