Abstract: Technologies and techniques associated with cross-layer quality of service (QOS) indication for sidelink communications are provided. In particular, mechanisms to handle priority and/or communication range requirements for medium access control (MAC) protocol data units (PDUs) with multiple logical channels (LCHs) are described. Other technologies and techniques may be described and/or claimed.

Abstract: An semiconductor manufacturing apparatus and method to smooth surfaces of discrete pads on a substrate. The method includes placing a surface of one of the discrete pads in registration with a first chamber of a set of chambers of a smoothing tool, the set corresponding to a smoothing cycle of the smoothing tool; etching, within the first chamber, a surface of one of the discrete pads to form an etch layer on the surface; placing the surface in registration with a second chamber of the set; after the etch, pumping gas and vapor from the surface within the second chamber; placing the surface in registration with a third chamber of the set; and applying heating to the surface in the third chamber to smooth the surface.

Abstract: In one embodiment, a processor includes: at least one core; and a power controller coupled to the at least one core. The power controller may include: a workload monitor circuit to calculate a background task ratio based on a first amount of time that the at least one core executed background tasks during an active duration; and a control circuit to dynamically apply a power management policy for a background mode when the background task ratio exceeds a background mode threshold, the power management policy for the background mode to reduce power consumption of the processor. Other embodiments are described and claimed.

Abstract: An embodiment of an electronic apparatus may include one or more substrates, and logic coupled to the one or more substrates, the logic to maintain a respective lookup table for each of two or more persistent storage devices in a persistent memory outside of the two or more persistent storage devices with a first indirection granularity that is smaller than a second indirection granularity of each of the two or more persistent storage devices, buffer write requests to the two or more persistent storage devices in the persistent memory in accordance with the respective lookup tables, and perform a sequential write from the persistent memory to a particular device of the two or more persistent storage devices when a portion of the buffer that corresponds to the particular device has an amount of data to write that corresponds to the second indirection granularity. Other embodiments are disclosed and claimed.

Abstract: Systems, methods, and apparatuses for low-latency page efficient chained decryption and decompression acceleration are described.

Abstract: A method comprises receiving an image of an update for a software module, a rate parameter, an index parameter, and a public key, generating a 32-byte aligned string, computing a state parameter using the 32-byte aligned string, generating a modified message representative, computing a Merkle Tree root node, and in response to a determination that the Merkle Tree root node matches the public key, forwarding, to a remote device, the image of the update for a software module, the state parameter; and the modified message representative.

Abstract: Technologies for providing selective offload of execution of an application to the edge include a device that includes circuitry to determine whether a section of an application to be executed by the device is available to be offloaded. Additionally, the circuitry is to determine one or more characteristics of an edge resource available to execute the section. Further, the circuitry is to determine, as a function of the one or more characteristics and a target performance objective associated with the section, whether to offload the section to the edge resource and offload, in response to a determination to offload the section, the section to the edge resource.

Abstract: A scheme for measuring AC and DC load-line (LL) using voltage and current monitoring apparatus. During calibration for LL measurement, a tested or known workload is executed on a processor or system-on-chip (SoC). The calibration can be done when the processor is first used in a real-time system (customer) scenario, or repeated whenever necessary to compensate silicon aging or other effects that affect the LL values. LL is estimated, determined, and/or calculated for each power supply rail in the processor or SoC. The measured LL is used in calculations that determine the operating voltage of an input voltage regulator (VR) at run time, thereby optimizing the power/performance characteristics of that specific system.

Abstract: Low resistance approaches for fabricating contacts, and semiconductor structures having low resistance metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor structure above a substrate. A gate electrode is over the semiconductor structure, the gate electrode defining a channel region in the semiconductor structure. A first semiconductor source or drain structure is at a first end of the channel region at a first side of the gate electrode. A second semiconductor source or drain structure is at a second end of the channel region at a second side of the gate electrode, the second end opposite the first end. A source or drain contact is directly on the first or second semiconductor source or drain structure, the source or drain contact including a barrier layer and an inner conductive structure.

Abstract: Disclosed herein are structures and techniques related to singulation of microelectronic components with direct bonding interfaces. For example, in some embodiments, a microelectronic component may include: a surface, wherein conductive contacts are at the surface; a trench at a perimeter of the surface; and a burr in the trench.

Abstract: An integrated circuit memory includes a first memory block and an adjacent second memory block. The first memory block comprises a first memory pillar around which a first memory cell is formed. The second memory block comprises a second memory pillar around which a second memory cell is formed. An isolation or slit area between the first and second memory blocks electrically isolates the first and second memory blocks. In an example, the slit area comprising a slit pillar around which no memory cells are formed. The slit pillar is a dummy pillar, and insulator material electrically isolates the slit pillar from a Word Line (WL) through which it passes. The isolation layer electrically can also isolate a (WL) of the first memory block from a corresponding WL of the second memory block. In an example, the slit pillar and the memory pillars have at least in part similar structures.

Abstract: For example, a Bluetooth (BT) device may include a first BT radio; a second BT radio; and a BT controller configured to control BT activities of the first and second BT radios, the BT controller configured to process a Host Controller Interface (HCI) command from a host processor of the BT device to setup a BT activity, the BT controller configured to identify one or more scheduling requirements of the BT activity based on the HCI command, and, based on the scheduling requirements of the BT activity, to dynamically schedule the BT activity to a selected BT radio from the first and second BT radios.

Abstract: Examples described herein relate to configuring a target network interface to recognize packets that are to be written directly from the network interface to multiple memory destinations. A packet can include an identifier that a portion of the packet is to be written to multiple memory devices at specific addresses. The packet is validated to determine if the target network interface is permitted to directly copy the portion of the packet to memory of the target. The target network interface can perform a direct copy to multiple memory locations of a portion of the packet.

Abstract: Systems, methods, and apparatuses associated with an approximate majority based data bus inversion technique are disclosed. A method comprises obtaining, at a first device connected by a plurality of lanes to a second device, original data comprising first bits and second bits, where the first bits are to be transmitted in a new clock cycle via first lanes of the plurality of lanes, and the second bits are to be transmitted in the new clock cycle via second lanes of the plurality of lanes. The method further includes determining whether a first criterion associated with the first bits is met, determining whether a second criterion associated with the second bits is met, and transmitting an inverted version of the original data via the plurality of lanes based, at least in part, on determining that the first criterion and the second criterion are met.

Abstract: Technologies for controlling operation of a compute node coupled to a computer network via a computing device that includes communications for communicating with the computer network and persistent instructions such as firmware for providing control functions to the computing device, wherein the control functions being defined at least in part by protocol data. An update control module of the computing device may receive update data from a remote node in the computer network via the communications, wherein the update data comprising new protocol data for the persistent instructions. A protocol parser module may parse the update data and generate metadata relating to the update data. A classifier module may receive rules for the control functions, wherein the rules are based at least in part on the update data and metadata. A compiler may compile the parsed update data to the persistent instructions for providing new control functions to the computing device based at least in part on the received rules.

Abstract: Multi-layer etch stop layers are described. In an example, an integrated circuit structure includes a conductive line in a first interlayer dielectric material above a substrate. A first dielectric etch stop layer, a second dielectric layer and a third dielectric layer are on the conductive line and the first interlayer dielectric material. A second interlayer dielectric material is on the third dielectric etch stop layer. An opening is in the second interlayer dielectric material, in the third dielectric etch stop layer, and in the second dielectric etch stop layer, in the first dielectric etch stop layer. A conductive structure is in the opening, the conductive structure in direct contact with the conductive line.

Abstract: Monolithic two-dimensional (2D) arrays of double-sided DRAM cells including a frontside bit cell over a backside bit cell. Each double-sided cell includes a stacked transistor structure having at least a first transistor over a second transistor. Each double-sided cell further includes a first capacitor on a frontside of the stacked transistor structure and electrically coupled to a source/drain of the first transistor. Each double-sided cell further includes a second capacitor on a backside of the stacked transistor structure and electrically coupled to a source/drain of the second transistor. Frontside cell addressing interconnects are electrically coupled to other terminals of at least the first transistor while one or more backside addressing interconnects are electrically coupled to at least one terminal of the second transistor or second capacitor.

Abstract: A printed circuit board (PCB), comprising a first layer, the first layer comprising a first dielectric material substantially exclusively. The PCB also comprises a second layer, the second layer comprising the first dielectric material within a first region and a second dielectric material within a second region adjacent to first region. The first dielectric material has a first dielectric constant, a first coefficient of thermal expansion (CTE) and a first glass transition temperature (Tg). The second dielectric material has a second dielectric constant, a second CTE and a second Tg. The first dielectric constant is greater than the second dielectric constant. The first CTE is substantially equal to the second CTE; and the first Tg and the second Tg are greater than 150° C.

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.

Abstract: An electronic device may comprise a first chassis, a second chassis, and a hinge assembly configured to rotatably couple the first and second chassis together. The hinge assembly may include a guide unit including a first guide member and a second guide member disposed on opposite sides of a hinge plane and spaced to define a passage area therebetween. The hinge assembly may further include a biasing member configured to move the guide unit such that the passage area of the guide unit traverses the hinge plane in a first direction as the first chassis rotates from a closed position to a fully rotated position. The electronic device may also include a heat carrying member having one end disposed in the first chassis, a second end disposed in the second chassis, and a middle portion extending through the passage area. The size of the passage area may remain fixed.