Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.

Abstract: A substrate support includes a disk having a disk shape to support at least one substrate, at least one pocket groove which is formed to be concave from an upper surface of the disk in a shape corresponding to the substrate such that at least an edge portion of the substrate is seated therein, a free space forming portion which is spaced inwardly at a predetermined distance from an edge of the pocket groove and formed to be concave from at least a part of a bottom surface of the pocket groove so as to define a stepped portion that supports at least the edge portion of the substrate and forms a free space below the substrate when the substrate is seated on the stepped portion, and an exhaust passage which connects an outer circumferential surface of the disk to at least a part of the free space forming portion.

Abstract: Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the proce

Abstract: Provided are a substrate transfer apparatus and a control method thereof. The substrate transfer apparatus includes a body having a gate through which a substrate passes; a substrate transfer robot provided inside the body and including an end effector that includes a first seating portion and a second seating portion horizontally spaced apart from each other; a sensing portion including a light emitting portion and a light receiving portion spaced apart from each other in a diagonal direction with respect to a longitudinal direction of the first and second seating portions with reference to the end effector, and detecting the position of at least one of the first seating portion and the second seating portion when the end effector moves; and a control unit for determining whether the end effector is misaligned or sagged by using a measured value measured by the sensing portion and a predetermined reference value.

Abstract: Provided is a substrate processing apparatus and substrate processing method for depositing a thin film on a substrate. The substrate processing apparatus may include a chamber, a susceptor rotatably mounted in the chamber, at least one satellite mounted on the susceptor, configured to place a substrate thereon, and capable of being floated and rotating due to pressure of a gas supplied through the susceptor, to rotate the substrate, and of revolving due to rotation of the susceptor, and a cart lifting module including a cart mounted on the susceptor around the satellite and supporting an edge of the substrate to take over the substrate and place the substrate on the satellite, and a cart lifting device capable of lifting and lowering the cart.

Abstract: Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.

Abstract: Provided are a substrate processing apparatus and a substrate processing method using the same and, more particularly, a substrate processing apparatus capable of controlling deposition of a reactive-metal-containing precursor in an exhaust line, and a substrate processing method using the same.

Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.

Abstract: Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the proce

Abstract: Provided is a method of forming an amorphous silicon layer, the method including supplying a reaction gas and an inert gas onto a substrate having an underlayer thereon, and stabilizing the gases while power for generating plasma is not being applied to a chamber, depositing an amorphous silicon layer on the underlayer by using plasma of the reaction gas, which is generated by applying a high-frequency (HF) power of 500 W to 700 W and, at the same time, applying a low-frequency (LF) power lower than the HF power to the chamber, providing a purge gas into the chamber, and pumping the chamber.

Abstract: Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.

Abstract: A substrate processing system and substrate processing method. The substrate processing system includes: a chamber; a susceptor disposed inside the chamber and allowing a substrate to be seated thereon; a mask member disposed over the substrate; and a controller for controlling an arrangement height of the mask member with respect to the substrate. Here, an encapsulation layer covering a device formed on the substrate is formed using the mask member adjusted in height by the controller. The substrate processing method includes disposing a substrate inside a chamber; disposing a mask member over the substrate inside the chamber; and forming an encapsulation layer covering a device formed on the substrate by adjusting an arrangement height of the mask member with respect to the substrate.

Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.

Abstract: Provided is a method of forming an amorphous silicon layer, the method including supplying a reaction gas and an inert gas onto a substrate having an underlayer thereon, and stabilizing the gases while power for generating plasma is not being applied to a chamber, depositing an amorphous silicon layer on the underlayer by using plasma of the reaction gas, which is generated by applying a high-frequency (HF) power of 500 W to 700 W and, at the same time, applying a low-frequency (LF) power lower than the HF power to the chamber, providing a purge gas into the chamber, and pumping the chamber.

Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.

Abstract: A substrate processing system and substrate processing method. The substrate processing system includes: a chamber; a susceptor disposed inside the chamber and allowing a substrate to be seated thereon; a mask member disposed over the substrate; and a controller for controlling an arrangement height of the mask member with respect to the substrate. Here, an encapsulation layer covering a device formed on the substrate is formed using the mask member adjusted in height by the controller. The substrate processing method includes disposing a substrate inside a chamber; disposing a mask member over the substrate inside the chamber; and forming an encapsulation layer covering a device formed on the substrate by adjusting an arrangement height of the mask member with respect to the substrate.

Abstract: An apparatus for processing a substrate may include a chamber, a substrate support, a showerhead structure and a purge ring structure. The purge ring structure may be arranged at an edge portion of the substrate support to inject a deposition-preventing gas, which may be supplied from the substrate support, to an edge portion of an upper surface of the substrate. The purge ring structure may include a purge ring and a plurality of bosses. The purge ring may be configured to surround the substrate. The bosses may be protruded from an inner surface of the purge ring in a radius direction of the substrate to form a gap between the inner surface of the purge ring and the edge portion of the substrate. The deposition-preventing gas may be supplied to the upper surface of the substrate through the gap.

Abstract: Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode.

Abstract: Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate.