Abstract: There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a ?-BiNbO4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.

Abstract: An oxide all-solid-state battery excellent in lithium ion conductivity and joint strength between an anode active material layer and solid electrolyte layer thereof. In the oxide all-solid-state battery, the solid electrolyte layer is a layer mainly containing a garnet-type oxide solid electrolyte sintered body represented by the following formula (1): (Lix-3y-z, Ey, Hz)L?M?O?; a solid electrolyte interface layer is disposed between the anode active material layer and the solid electrolyte layer; the solid electrolyte interface layer contains at least a Si element and an O element; and a laminate containing at least the anode active material layer, the solid electrolyte interface layer and the solid electrolyte layer has peaks at positions where 2?=32.3°±0.5°, 37.6°±0.5°, 43.8°±0.5°, and 57.7°±0.5° in a XRD spectrum obtained by XRD measurement using CuK? irradiation.

Abstract: The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200° C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5° C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2° C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500° C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.

Abstract: An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.

Abstract: It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.

Abstract: The present invention provides a protein aggregation inhibitor for use in preventing aggregation of a protein, which contains a terminal sulfanyl group-containing sulfobetaine polymer having a repeat unit derived from a sulfobetaine monomer represented by the formula (II), and a noble metal particle, and in which the terminal sulfanyl group-containing sulfobetaine polymer is chemisorbed on the noble metal particle by the sulfanyl group (the groups in the following formula are as defined in the DESCRIPTION).

Abstract: An oxide all-solid-state battery excellent in lithium ion conductivity and joint strength between an anode active material layer and solid electrolyte layer thereof. In the oxide all-solid-state battery, the solid electrolyte layer is a layer mainly containing a garnet-type oxide solid electrolyte sintered body represented by the following formula (1): (Lix-3y-z, Ey, Hz)L?M?O?; a solid electrolyte interface layer is disposed between the anode active material layer and the solid electrolyte layer; the solid electrolyte interface layer contains at least a Si element and an O element; and a laminate containing at least the anode active material layer, the solid electrolyte interface layer and the solid electrolyte layer has peaks at positions where 2?=32.3°±0.5°, 37.6°±0.5°, 43.8°±0.5°, and 57.7°±0.5° in a XRD spectrum obtained by XRD measurement using CuK? irradiation.

Abstract: Provided are a vitrification stabilizer for animal cell cryopreservation fluid, and an animal cell cryopreservation fluid that exhibits superior vitrification capacity due to containing said vitrification stabilizer for animal cell cryopreservation fluid. The vitrification stabilizer for animal cell cryopreservation fluid contains an amphoteric polymer compound selected from the group consisting of: (a) an amphoteric polymer compound obtained by reacting ?-poly-L-lysine with butyl succinic acid anhydride and performing carboxylation; (b) an amphoteric polymer compound obtained by reacting ?-poly-L-lysine with butyl succinic acid anhydride and succinic acid anhydride, and performing carboxylation; and (c) an amphoteric polymer compound obtained by reacting ?-poly-L-lysine with a compound represented by formula (I) and performing carboxylation.

Abstract: It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 that covers a gate electrode layer 40 disposed above a semiconductor layer 20 with a gate insulator 30 being interposed between the gate electrode layer 40 and the semiconductor layer 20, and also covers the semiconductor layer 20, and has a dopant causing the semiconductor layer 20 to become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layer 20 and decomposition of the aliphatic polycarbonate layer 50.

Abstract: Provided is a protein aggregation inhibitor capable of inhibiting aggregation of a protein even when the protein is heated, and further, capable of inhibiting a decrease in the protein activity even when the protein is heated, which characteristically contains a sulfobetaine polymer obtained by polymerizing monomer components containing sulfobetaine monomer represented by the formula (I): wherein R1 is a hydrogen atom or a methyl group, R2 is an alkylene group having a carbon number of 1-4, R3 is an alkyl group having a carbon number of 1-4, R4 is an alkylene group having a carbon number of 1-4, and X is an —NH— group or an —O— group.

Abstract: The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Abstract: There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a ?-BiNbO4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.

Abstract: The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Abstract: Method for concentrating and collecting small quantities of fetal nucleated red blood cells contained in the maternal blood. The method for concentrating and collecting nucleated red blood cells from the maternal blood comprises: (i) subjecting the maternal blood to a first density-gradient centrifugation and collecting a cell fraction containing nucleated red blood cells; (ii) treating the cell fraction containing nucleated red blood cells so as to selectively changes the density of the nucleated red blood cells from that of the white blood cells; and (iii) subjecting the treated cell fraction containing the nucleated red blood cells to a second density-gradient centrifugation so as to collect a fraction containing nucleated red blood cells.

Abstract: The present invention provides a new photoreactive compound which can be used in technologies for photoreactions of nucleic acid, and also provides a photoreactive crosslinking agent comprising the above photoreactive compound. A photoreactive compound represented by the following formula I can be used.

Abstract: A method for evaluating the quality of a blood sample, comprising the steps of: mixing labeled anti-cortisol antibodies with a blood sample to be subjected, to conduct the antigen-antibody reaction of the labeled anti-cortisol antibody with cortisol contained in the blood sample, developing a mixture obtained in the above step on an immunochromatographic test strip having a substrate on which cortisol is immobilized to cause the antigen-antibody reaction of the labeled anti-cortisol antibodies which are free in the mixture with the cortisol immobilized on the substrate, thereby bonding the antibody to the cortisol, determining the amount of the labeled anti-cortisol antibodies bonded to the cortisol in the above step, and evaluating whether or not the blood sample has a quality suitable for suprarenal vein sampling test on the basis of the amount of the labeled anti-cortisol antibodies determined in the above step.

Abstract: The object is to provide a universal joint that, has a secure range of motion, does not deviate from the center of rotation, and does not generate bending moments between itself and a joint that links a plurality of movable members. A plurality of movable members (3A-3F and 3a-3f) and a spherical member (2) that links the plurality of movable members are provided, curved node sections (q) are formed on the movable members and are brought into contact with the spherical member (2), and by causing one of the plurality of movable members (3A) to rotate such that the curved node section thereof rotates along the surface of the spherical member (2), another one of the plurality of movable members (3B) is caused to rotate along the surface of the spherical member.

Abstract: To provide a polymer material having properties that allow the polymer material to replace a polyimide and a polyamide synthesized from a petroleum raw material, said polymer material being synthesized from a raw material derived from natural molecules. [Solution] This polymer material is obtained by polymerizing a polymer raw material comprising a dimer of 4-amino cinnamic acid or a dimer of a 4-amino cinnamic acid derivative, which are natural molecules, wherein the carboxyl group is protected by an alkyl chain. The TGA curve of a polyamide acid (PAA-1) and a polyimide (PI-1) according to the present invention is shown in FIG. 5.

Abstract: A digital watermark detection device includes a first chirp z-transform unit (202a) and a second chirp z-transform unit (202b) for estimating the cochlear delay characteristics simulated by cochlear delay filters that were used in embedding digital watermark data in an acoustic signal. The digital watermark data embedded in the acoustic signal is detected based on the cochlear delay characteristics estimated in accordance with the result of chirp z-transform applied by these first chirp z-transform unit (202a) and second chirp z-transform unit (202b).

Abstract: The present invention provides a method for detecting methylcytosine in DNA rapidly, conveniently, and with high sensitivity. The present invention relates to a method for detecting methylcytosine by using a methylcytosine photocoupling agent (a photoresponsive probe) consisting of nucleic acids having a group represented by the Formula (I), (II), (III) or (IV) as a base moiety.