Patents Assigned to JSR Corporation
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Patent number: 11915644Abstract: Various examples are provided related to compensating brightness of a display using a vertical organic light emitting transistor that suppresses variations in brightness over a long period of time and a display. In one example, a method includes applying a voltage for brightness inspection to a gate electrode of the vertical organic light emitting transistor to be corrected, measuring a current flowing through a current supply line through which the current is supplied to a source electrode of the vertical organic light emitting transistor by the application of the voltage for brightness inspection to the gate electrode of the vertical organic light emitting transistor to be corrected, and determining a corrected value of the voltage to be applied to the gate electrode of the vertical organic light emitting transistor based on a value of the current and characteristic information of the vertical organic light emitting transistor stored in the memory.Type: GrantFiled: April 23, 2020Date of Patent: February 27, 2024Assignees: MATTRIX TECHNOLOGIES, INC., JSR CORPORATIONInventors: Hiromitsu Katsui, Bo Liu, Maxime Lemaitre
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Patent number: 11884705Abstract: Provided are a protein L-derived immunoglobulin binding protein having an increased antibody dissociation rate under acidic conditions, and an affinity support using the same. Disclosed are an immunoglobulin binding protein comprising at least one mutant of an immunoglobulin binding domain, and an affinity support comprising a solid-phase support having the immunoglobulin binding protein bound thereto. A mutant of the immunoglobulin binding domain consists of an amino acid sequence having an identity of at least 85% with the sequence set forth in any one of SEQ ID NO:1 to SEQ ID NO:9 and a predetermined mutation, and the mutant has immunoglobulin ? chain binding activity.Type: GrantFiled: September 25, 2018Date of Patent: January 30, 2024Assignees: JSR CORPORATION, JSR Life Sciences Corporation, JSR Life Sciences, LLC, JSR Micro N.V.Inventors: Jun-ichi Yasuoka, Kiichi Yoshimura, Tomoaki Haga
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Publication number: 20240030030Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.Type: ApplicationFiled: September 28, 2023Publication date: January 25, 2024Applicant: JSR CORPORATIONInventors: Ken MARUYAMA, Takayoshi ABE, Kazunori SAKAI
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Publication number: 20240026069Abstract: One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: wherein X's are each independently —O—, —S—, or —N(R3)—, R3 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, or a group obtained by substituting a part of the hydrocarbon group or the halogenated hydrocarbon group with at least one selected from an oxygen atom and a sulfur atom, R1 is a divalent organic group, and R2 is a divalent unsubstituted or substituted nitrogen-containing heteroaromatic ring; —Y??(a) wherein Y is a group containing an ethylenically unsaturated double bond and having 3 to 50 carbon atoms, an unsubstituted or substituted aromatic hydrocarbon group having 6 to 50 carbon atoms, an unsubstituted or substitutedType: ApplicationFiled: September 27, 2023Publication date: January 25, 2024Applicant: JSR CORPORATIONInventors: Naoyuki KAWASHIMA, Yuutoku YAMASHITA, Shoma ANABUKI, Takeru KAMEYAMA, Kenta NISHINO, Arata SHINOHARA, Shintarou FUJITOMI
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Patent number: 11880138Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.Type: GrantFiled: February 1, 2021Date of Patent: January 23, 2024Assignee: JSR CORPORATIONInventors: Shin-ya Nakafuji, Hiroki Nakatsu, Tomoaki Taniguchi, Tomohiro Oda
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Publication number: 20240021429Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. An exposed portion of the exposed metal-containing resist film is dissolved with a developer to form a resist pattern.Type: ApplicationFiled: September 25, 2023Publication date: January 18, 2024Applicant: JSR CORPORATIONInventors: Ken MARUYAMA, Takayoshi Abe, Kazunori Sakai
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Publication number: 20240011973Abstract: A method for producing a two-dimensional small intestinal organoid having a villus structure, the method including a step 1 of culturing a cell derived from a small intestinal epithelium in an extracellular matrix to obtain a three-dimensional small intestinal organoid, a step 2 of dispersing the three-dimensional small intestinal organoid and monolayer culturing on the extracellular matrix to obtain a two-dimensional small intestinal organoid, and a step 3 of further culturing the two-dimensional small intestinal organoid while letting a culture medium of the two-dimensional small intestinal organoid to flow so that the two-dimensional small intestinal organoid forms a villus structure.Type: ApplicationFiled: December 3, 2021Publication date: January 11, 2024Applicants: KEIO UNIVERSITY, JSR CORPORATIONInventors: Toshiro SATO, Shinya SUGIMOTO, Kazuya ARAI
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Publication number: 20240004297Abstract: A composition includes: a solvent; and a compound including: at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); and a structural unit represented by formula (2-1). X is a monovalent organic group other than an alkoxy group, the monovalent organic group having 1 to 20 carbon atoms and having at least one fluorine atom; Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; R0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is a monovalent organic group having 1 to 20 carbon atoms and having no fluorine atom, a hydroxy group, a hydrogen atom, or a halogen atom; and R2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms.Type: ApplicationFiled: July 5, 2023Publication date: January 4, 2024Applicant: JSR CORPORATIONInventors: Tatsuya KASAI, Ayaka Furusawa, Kazunori Sakai, Ryuichi Serizawa
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Publication number: 20240004288Abstract: Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains one or two or more onium salts containing an organic acid anion moiety and an onium cation moiety, a compound having a structure in which an alkoxycarbonyl group is bonded to a nitrogen atom, and a solvent, wherein at least part of the organic acid anion moiety in the onium salt contains an iodine-substituted aromatic ring structure, and at least part of the onium cation moiety contains a fluorine-substituted aromatic ring structure.Type: ApplicationFiled: August 3, 2021Publication date: January 4, 2024Applicant: JSR CORPORATIONInventor: Ken MARUYAMA
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Publication number: 20230416422Abstract: A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom.Type: ApplicationFiled: September 11, 2023Publication date: December 28, 2023Applicant: JSR CORPORATIONInventors: Hiroki NAKATSU, Shuhei Yamada, Shinya Abe, Takashi Tsuji, Kanako Ueda, Hiroyuki Miyauchi
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Publication number: 20230416451Abstract: A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).Type: ApplicationFiled: August 29, 2023Publication date: December 28, 2023Applicant: JSR CORPORATIONInventors: Shuhei YAMADA, Shinya ABE, Takashi TSUJI, Kanako UEDA, Hiroki NAKATSU, Hiroyuki MIYAUCHI
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Publication number: 20230400767Abstract: A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; R2, R3, and R4 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R5 represents a monovalent organic group having 1 to 20 carbon atoms; and L represents a single bond or a divalent organic group having 1 to 20 carbon atoms.Type: ApplicationFiled: August 29, 2023Publication date: December 14, 2023Applicant: JSR CORPORATIONInventors: Takuya OMIYA, Katsuaki NISHIKORI, Kazuya KIRIYAMA, Natsuko KINOSHITA, Tetsurou KANEKO
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Publication number: 20230400765Abstract: A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1). R1 is a monovalent hydrocarbon group having 1 to 20 carbon atoms; R2 and R3 are each independently a monovalent hydrocarbon group having 1 to 20 carbon atoms, or R2 and R3 taken together represent a cyclic structure having 3 to 20 ring atoms; R4 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms and L1 is a divalent linking group having 1 to 40 carbon atoms, or R4 and L1 taken together represent a group including a heterocyclic structure having 3 to 20 ring atoms; Rf1 and Rf2 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms.Type: ApplicationFiled: May 18, 2023Publication date: December 14, 2023Applicant: JSR CORPORATIONInventors: Ryuichi NEMOTO, Nozomi SAKANO
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Publication number: 20230400768Abstract: A radiation-sensitive composition includes: a polymer (A) including a structural unit having a hydroxyl group bonded to an aromatic ring; and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), in which, at least one compound selected from the group consisting of the polymer (A) and the acid-generating compound includes a radiation-sensitive onium cation structure [X] having two or more of at least one substituent ? selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded); and an organic anion structure [Y] having an iodo group, in the same compound or different compounds.Type: ApplicationFiled: November 15, 2021Publication date: December 14, 2023Applicant: JSR CORPORATIONInventor: Ken MARUYAMA
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Publication number: 20230393469Abstract: A radiation-sensitive resin composition includes a resin including a structural unit represented by formula (1), a radiation-sensitive acid generator, and a solvent. R1 is a hydrogen atom, a fluorine atom, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R4 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R5 and R6 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R7 and R8 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R9 and R10 each independently represent a monovalent organic group having 1 to 10 carbon atoms, or the like.Type: ApplicationFiled: August 18, 2023Publication date: December 7, 2023Applicant: JSR CORPORATIONInventors: Nozomi SAKANO, Ryuichi NEMOTO
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Patent number: 11837166Abstract: Various examples are provided related to compensating brightness of a display using a vertical organic light emitting transistor that suppresses variations in brightness over a long period of time and a display. In one example, a method includes applying a voltage for brightness inspection to a gate electrode of the vertical organic light emitting transistor to be corrected, measuring a current flowing through a current supply line through which the current is supplied to a source electrode of the vertical organic light emitting transistor by the application of the voltage for brightness inspection to the gate electrode of the vertical organic light emitting transistor to be corrected, and determining a corrected value of the voltage to be applied to the gate electrode of the vertical organic light emitting transistor based on a value of the current and characteristic information of the vertical organic light emitting transistor stored in the memory.Type: GrantFiled: April 23, 2020Date of Patent: December 5, 2023Assignees: JSR CORPORATION, MATTRIX TECHNOLOGIES, INC.Inventors: Hiromitsu Katsui, Bo Liu, Maxime Lemaitre
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Publication number: 20230384676Abstract: A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond or —COO-L-; L represents a substituted or unsubstituted alkanediyl group; R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; L2 represents a single bond or a divalent linking group; and Ar represents a group obtained by removing (n+1) hydrogen atoms from an aromatic ring. R3 is independently a halogen atom, a halogenated hydrocarbon group, a hydroxy group, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent alkyl ether group having 1 to 10 carbon atoms, and at least one R3 is a halogen atom or a halogenated hydrocarbon group.Type: ApplicationFiled: April 18, 2023Publication date: November 30, 2023Applicant: JSR CORPORATIONInventors: Takuya OMIYA, Katsuaki NISHIKORI, Kazuya KIRIYAMA, Yuushi MATSUMURA, Natsuko KINOSHITA
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Publication number: 20230345631Abstract: Provided is a prepreg for producing a multilayer printed wiring board having high reliability and being excellent in adhesiveness with respect to a base material or the like. The prepreg includes: a base material; and a polymer having a structural unit represented by at least one kind of the following formulae (1-1), (1-2), and (1-3).Type: ApplicationFiled: August 19, 2021Publication date: October 26, 2023Applicant: JSR CORPORATIONInventors: Nobuyuki MIYAKI, Naoyuki KAWASHIMA, Yuutoku YAMASHITA, Shouma ANABUKI, Kenta NISHINO, Takeru KAMEYAMA
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Publication number: 20230341772Abstract: A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).Type: ApplicationFiled: June 29, 2023Publication date: October 26, 2023Applicant: JSR CORPORATIONInventor: Ken MARUYAMA
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Publication number: 20230341778Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).Type: ApplicationFiled: June 14, 2023Publication date: October 26, 2023Applicant: JSR CORPORATIONInventors: Naoya NOSAKA, Kengo EHARA, Hiroki NAKATSU, Masato DOBASHI, Hiroyuki MIYAUCHI