Abstract: A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).

Abstract: A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X), where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.

Abstract: A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof (excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×106. RO(CH2)2O(CH2)2OH??(1) ROH??(2) (In the formula (1) and the formula (2), R's represent the same hydrocarbon group.

Abstract: A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by MA [mass %] and the content of the (B) component is indicated by MB [mass %], MA/MB is 1.0×102 to 1.0×104. R2N(OH)??(1) R2NH??(2) (In the formula (1) and the formula (2), R's each independently represent an alkyl group having 1 to 4 carbon atoms.

Abstract: A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); at least one onium salt each including an organic acid anion moiety and an onium cation moiety; and a solvent. At least part of the organic acid anion moiety in the at least one onium salt includes an iodine-substituted aromatic ring structure. R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Y1 is a divalent linking group, and X1 is an acid-dissociable group, and n is 0 or 1. When n is 0, X1 is represented by formula (s1) or (s2).

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.

Abstract: A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A? represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

Abstract: A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1?); a resin including a structural unit having an acid-dissociable group; and a solvent. EA is a substituted or unsubstituted (?+?)-valent organic group having 1 to 40 carbon atoms; Z+ is a monovalent radiation-sensitive onium cation; and ? and ? are each independently 1 or 2.

Abstract: A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents ? each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X].

Abstract: A discerning device that discerns a cell mass includes: a storage unit that stores a trained model that has been subjected to machine learning on the basis of training data in which an index associated with a first cell mass out of a predetermined index including at least one index indicating a feature of a cell mass is correlated with information indicating whether a state of the first cell mass is a first state or a second state that is different from the first state; an image-analyzing unit that acquires an index associated with a second cell mass out of the predetermined index; and a discerning-processing unit that discerns whether a state of the second cell mass is the first state or the second state on the basis of the index associated with the second cell mass and the trained model.

Abstract: A liquid crystal display device includes: a substrate; a plurality of vertical organic light-emitting transistors; a data line that supplies a voltage to a gate electrode of the vertical organic light-emitting transistor; a thin-film transistor that is connected between the gate electrode of each of the vertical organic light-emitting transistors and the data line and controls supply of the voltage to the gate electrode of the vertical organic light-emitting transistor; a gate line that is connected to the gate electrode of the thin-film transistor and transmits a signal for switching the thin-film transistor; and a plurality of current supply lines that are wired in a first direction outside a formation region of the vertical organic light-emitting transistor, the current supply lines being in contact with a source electrode of the vertical organic light-emitting transistor to supply a current to the vertical organic light-emitting transistor.

Abstract: A chromatography carrier may exhibit high liquid permeability and an excellent pressure-resistant characteristic during liquid passage. A chromatography carrier production method may include: (1) providing a solid phase support, the solid phase support being formed of porous particles on which a ligand has or has not been immobilized; and (2) subjecting the solid phase support to sieve classification, the coefficient of variation of the volume particle size distribution of the porous particles when a ligand has been immobilized being adjusted to 1% to 22%. The skewness of the volume particle size distribution of the porous particles when a ligand has been immobilized may be adjusted to ?0.1 to 5.

Abstract: An embodiment of the present invention relates to a photosensitive resin composition, a method for manufacturing a resist pattern film, and a method for manufacturing a plated shaped article; the photosensitive resin composition comprises (A) an alkali-soluble resin, (B1) a polymerizable compound having at least two (meth)acryloyl groups and at least two hydroxy groups in one molecule and having a ring structure, (C) a photoradical polymerization initiator, (D) at least one compound selected from the group consisting of a nitrogen-containing heterocyclic compound (d1) containing two or more nitrogen atoms, a thiol compound (d2), and a polymerization inhibitor (d3), and (F) a solvent.

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.

Abstract: A radiation-sensitive resin composition contains: a first polymer having a first structural unit including a partial structure obtained by substituting a hydrogen atom of a carboxy group or of a phenolic hydroxy group with an acid-labile group represented by formula (1); and a compound including: a monovalent radiation-sensitive onium cation moiety including an aromatic ring structure which includes a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion moiety. Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic ring structure having 5 to 30 ring atoms; R 1 and R2 each independently represent a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a site bonding to an ethereal oxygen atom in the carboxy group or an oxygen atom in the phenolic hydroxy group.

Abstract: Various examples are provided related to compensating brightness of a display using a vertical organic light emitting transistor that suppresses variations in brightness over a long period of time and a display. In one example, a method includes applying a voltage for brightness inspection to a gate electrode of the vertical organic light emitting transistor to be corrected, measuring a current flowing through a current supply line through which the current is supplied to a source electrode of the vertical organic light emitting transistor by the application of the voltage for brightness inspection to the gate electrode of the vertical organic light emitting transistor to be corrected, and determining a corrected value of the voltage to be applied to the gate electrode of the vertical organic light emitting transistor based on a value of the current and characteristic information of the vertical organic light emitting transistor stored in the memory.

Abstract: Provided are a protein L-derived immunoglobulin binding protein having an increased antibody dissociation rate under acidic conditions, and an affinity support using the same. Disclosed are an immunoglobulin binding protein comprising at least one mutant of an immunoglobulin binding domain, and an affinity support comprising a solid-phase support having the immunoglobulin binding protein bound thereto. A mutant of the immunoglobulin binding domain consists of an amino acid sequence having an identity of at least 85% with the sequence set forth in any one of SEQ ID NO:1 to SEQ ID NO:9 and a predetermined mutation, and the mutant has immunoglobulin ? chain binding activity.

Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.

Abstract: One embodiment of the present invention relates to a polymer, a composition, a cured product, a laminate, or an electronic component, and the polymer has a repeating structural unit represented by Formula (1) and has a group Y represented by Formula (a) at a terminal: wherein X's are each independently —O—, —S—, or —N(R3)—, R3 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms, a monovalent halogenated hydrocarbon group having 1 to 20 carbon atoms, or a group obtained by substituting a part of the hydrocarbon group or the halogenated hydrocarbon group with at least one selected from an oxygen atom and a sulfur atom, R1 is a divalent organic group, and R2 is a divalent unsubstituted or substituted nitrogen-containing heteroaromatic ring; —Y??(a) wherein Y is a group containing an ethylenically unsaturated double bond and having 3 to 50 carbon atoms, an unsubstituted or substituted aromatic hydrocarbon group having 6 to 50 carbon atoms, an unsubstituted or substituted

Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.