Abstract: A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.

Abstract: A composition includes: a metal compound; a compound having an oxymethylene structure; and a solvent. The metal compound is a metal salt or a metal complex. The compound having an oxymethylene structure is capable of generating an aldehyde structure when degraded through heating. A metal atom contained in the metal compound preferably belongs to any one of periods 3 to 7 among groups 2 to 14 in a periodic table.

Abstract: A culture method includes culturing a spheroid of a human neural cell-like cell in the presence of a tau protein aggregate and culturing a culture product in a culture medium containing 5 ?g/mL or greater of a lipid, in which the lipid is one or more selected from the group consisting of a glycerolipid, a glycerophospholipid, and a sphingolipid. The culture method includes culturing a spheroid of a human neural cell-like cell in the presence of a tau protein aggregate and culturing a culture product in a culture medium containing a neurotrophic factor.

Abstract: A composition includes a polymer and a solvent. The polymer includes: a structural unit including a ring structure; and a functional group capable of bonding to a metal atom. An atom chain constituting the ring structure constitutes a part of a main chain of the polymer. The polymer preferably includes at an end of the main chain or at an end of a side chain, a group including the functional group. The functional group is preferably a cyano group, a phosphono group, or a dihydroxyboryl group. The ring structure preferably includes an alicyclic structure.

Abstract: A chromatographic device, including a housing including an inlet and an outlet of a fluid, an inlet distribution plate positioned inside the housing such that the inlet distribution plate receives a fluid flowing through the inlet and distributes the flow inside the housing, an inlet frit plate positioned on the inlet distribution plate, a chromatography medium placed inside the housing, at least one multi-planar screen positioned inside the housing to receive the fluid to be separated from the inlet distribution plate and the inlet frit plate, the multi-planar screen being structured such that the chromatography medium is held inside thereof, and that the fluid to be separated from the inlet distribution plate and the inlet frit plate passes through the chromatography medium, an outlet distribution plate that receives the fluid separated, and an outlet frit plate positioned on the outlet distribution plate such that the outlet frit plate receives a force created by the flow of the fluid through the chromatog

Abstract: The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO4?), hypochlorite ions (CIO?), chlorite ions (CIO2?) and hypobromite ions (BrO?) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).

Abstract: A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

Abstract: A biomimetic system includes: a container; and a human cholangiocyte-like cell-containing membrane, in which the human cholangiocyte-like cell-containing membrane includes a permeable base plate and a two-dimensional tissue of human cholangiocyte-like cells stacked on one surface of the permeable base plate, the human cholangiocyte-like cell-containing membrane divides the container into a first compartment and a second compartment, a one surface side of the permeable base plate is exposed in the first compartment, the other surface side of the permeable base plate is exposed in the second compartment, the human cholangiocyte-like cells express P-gp, and an efflux ratio calculated by Formula (1) is 1.5 or more, efflux ratio=(permeation rate of rhodamine 123 that permeates from the second compartment to the first compartment)/(permeation rate of rhodamine 123 that permeates the second compartment from the first compartment) . . .

Abstract: A novel polymer having high glass transition temperature and an excellent balance between heat resistance, high refractive index and mechanical properties, and a composition and molded article containing the polymer are provided. The polymer according to the invention has a first structural unit represented by at least one of formulae (1-1), (1-2) and (1-3) below and a second structural unit having either a secondary amino structure or a tertiary amino structure at two or more terminals.

Abstract: A method for forming a resist underlayer film includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a coating film. The coating film is heated at a heating temperature of higher than 450° C. and 600° C. or lower in an atmosphere having an oxygen concentration of less than 0.01% by volume. The composition for forming a resist underlayer film includes: a compound including an aromatic ring; a polymer which thermally decomposes at the heating temperature in heating the coating film, and which is other than the compound; and a solvent. The compound has a molecular weight of 400 or more. A content of the polymer is less than a content of the compound in the composition for forming a resist underlayer film.

Abstract: An object of the present invention is to provide a photosensitive composition capable of producing a pattern having a precise shape without causing curing defects of a coating film even when the time is required from exposure of the coating film to the next step. A photosensitive composition of the present invention contains a polymer (A), a polymerizable compound (B), a photoacid generator (C), and a solvent (D), in which the polymerizable compound (B) includes an epoxy compound (B-1) containing two or more groups represented by the following Formula (1) and a specific epoxy compound (B-2) other than the epoxy compound (B-1), and an epoxy compound containing an epoxy group fused to an alicyclic group is contained in an amount of 50 mass % or more with respect to a total of 100 mass % of the polymerizable compound (B).

Abstract: Various examples are provided related to driving a light emitting display in which variations in image quality and brightness can be suppressed despite long-term use, without adding a complicated circuit configuration. In one example, a method includes applying a voltage based on image data to be displayed to a gate electrode of a vertical organic light emitting transistor and applying a voltage, having a polarity opposite to that of the voltage applied to the gate electrode of the vertical organic light emitting transistor, to the gate electrode of the vertical organic light emitting transistor based on a value of a voltage being applied to a source electrode of the vertical organic light emitting transistor.

Abstract: A composition includes a metal compound, a polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2), and a solvent. R1 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R2 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. R3 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L is a single bond or a divalent linking group; Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring members; R4 is a monovalent hydroxyalkyl group having 1 to 10 carbon atoms or a hydroxy group; and n is an integer of 0 to 8.

Abstract: A method is provided for evaluating excretion of a substance of interest by a human hepatocyte-like cell, the method including: preparing a sac-like-material-containing solution that contains a sac-like material which is produced in vitro and has a membrane of a human hepatocyte-like cell and 0% to 10% by volume of a suspended extracellular matrix; placing the substance of interest in the sac-like-material-containing solution to bring the substance of interest into contact with the sac-like material; and extracting the sac-like material from the sac-like-material-containing solution and measuring a concentration of the substance of interest or a metabolite thereof excreted into an inner cavity of the sac-like material.

Abstract: Various examples are provided related to compensating brightness of a display using a vertical organic light emitting transistor that suppresses variations in brightness over a long period of time and a display. In one example, a method includes applying a voltage for brightness inspection to a gate electrode of the vertical organic light emitting transistor to be corrected, measuring a current flowing through a current supply line through which the current is supplied to a source electrode of the vertical organic light emitting transistor by the application of the voltage for brightness inspection to the gate electrode of the vertical organic light emitting transistor to be corrected, and determining a corrected value of the voltage to be applied to the gate electrode of the vertical organic light emitting transistor based on a value of the current and characteristic information of the vertical organic light emitting transistor stored in the memory.

Abstract: In this liquid crystal display device, a plurality of pixels 30 are arranged in a display region. The liquid crystal display device comprises a first substrate 11 in which a pixel electrode 15 having slits 15a is provided, a second substrate disposed face to the first substrate 11, a liquid crystal layer 13 containing liquid crystal molecules that have negative dielectric anisotropy, a first alignment film 22, and a second alignment film 23. The slits 15a are positioned in each alignment region of a plurality of alignment regions in the pixels 30, and have oblique slit parts extending in an oblique direction with respect to sides of the pixels 30. The angle ? formed by the direction in which the oblique slit parts extends and a liquid crystal projection direction is 15 degrees or more and 85 degrees or less.

Abstract: A method for producing a chromatography carrier, including providing a solid phase support, where the solid phase support provided is formed of porous particles on which a ligand has or has not been immobilized, and subjecting the solid phase support to sieve classification. A coefficient of variation of a volume particle size distribution of the porous particles when a ligand has been immobilized is adjusted to 1% to 22%, and a ratio (d1/d50) of volume cumulative 1% particle size d1 to volume cumulative 50% particle size d50 in terms of the porous particles is adjusted to 0.55 to 1.0.

Abstract: A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); at least one onium salt each including an organic acid anion moiety and an onium cation moiety; and a solvent. At least part of the organic acid anion moiety in the at least one onium salt includes an iodine-substituted aromatic ring structure. R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Y1 is a divalent linking group, and X1 is an acid-dissociable group, and n is 0 or 1. When n is 0, X1 is represented by formula (s1) or (s2).

Abstract: A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).

Abstract: A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X), where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.