Abstract: A manufacturing method for an electrode material, the manufacturing method including, in a presence of an alkali metal supplying source and a solvent, dynamically pressurizing an amorphous aggregate including at least an active material in a dynamic pressurizer, sending out in a sending direction, and continuously discharging the aggregate in the sending direction from the dynamic pressurizer.

Abstract: A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL.

Abstract: A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK/MNa=1×10?1 to 1×104.

Abstract: A composition for pattern formation includes a first polymer, a second polymer and a solvent. The first polymer includes: a first block including a first structural unit derived from a substituted or unsubstituted styrene; and a second block including a second structural unit other than the first structural unit. The second polymer includes: the first structural unit; and a group bonding to at least one end of a main chain thereof and including a polar group. The polar group is preferably a hydroxy group or a carboxyl group. A number average molecular weight of the second polymer is preferably no greater than 6,000. A mass ratio of the second polymer to the first polymer is preferably no less than 0.15 and no greater than 0.4. The solvent preferably comprises a compound comprising a hydroxyl group and an alkyl ester group.

Abstract: An optical filter including a base member having a layer containing near-infrared absorbing fine particles and a dielectric multilayer film, the optical filter satisfying a requirement that, in a wavelength range of 400 nm to 650 nm, an average of transmittance of any of light incident from a direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees, and light obliquely incident at an angle of 60 degrees is 45% or higher and lower than 85%; and a requirement that, in a wavelength range of 800 nm to 1,200 nm, an average of optical density (OD value) of any of light incident from the direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees with respect to the perpendicular direction, and light obliquely incident at an angle of 60 degrees with respect to the perpendicular direction is 1.7 or higher.

Abstract: A composition includes two types of polymers each having a different weight average molecular weight. The two types of polymers are each a styrene polymer having a group which bonds to at least one end of a main chain and which includes at least one of a hydroxy group, a carboxy group, a sulfanyl group, an epoxy group, a cyano group, a vinyl group or a carbonyl group. A difference in weight average molecular weight between the two types of polymers is no less than 2,000 and no greater than 30,000.

Abstract: Provided is a doping system in which an active material in a strip-shaped electrode precursor having a layer including an active material is doped with alkali metal. The doping system includes a doping tank, a conveying unit, a counter electrode unit, a connection unit, and a porous insulating member. The doping tank accommodates a solution including alkali metal ions. The conveying unit conveys the electrode precursor along a path passing through the inside of the doping tank. The counter electrode unit is accommodated in the doping tank. The connection unit electrically connects the electrode precursor and the counter electrode unit. The porous insulating member is disposed between the electrode precursor and the counter electrode unit, and is not in contact with the electrode precursor.

Abstract: A novel polymer having high glass transition temperature and an excellent balance between heat resistance, high refractive index and mechanical properties, and a composition and molded article containing the polymer are provided. The polymer according to the invention has a first structural unit represented by at least one of formulae (1-1), (1-2) and (1-3) below and a second structural unit having either a secondary amino structure or a tertiary amino structure at two or more terminals.

Abstract: Provided is a cell adhesion inhibitor which exhibits low cytotoxicity and an excellent cell adhesion prevention effect; a tool and an apparatus each having a surface modified through application of the cell adhesion inhibitor thereto; a method for producing each of the surface-modified tool and apparatus; a biomedical structure and a production method therefor; and a microchannel device and a production method therefor. The invention provides a cell adhesion inhibitor comprising, as an active ingredient, a polymer comprising a repeating unit having a sulfinyl group in a side chain thereof.

Abstract: A binder composition for an electrode of an electric storage device is provided. The binder composition comprises (A) at least one polymer selected from the group consisting of polyamic acids and imidized polymers thereof having an imidization rate of 50% or less and (B) water. The ratio Ma/Mb of the content of the polymer (A), Ma (parts by mass), to the content of the water (B), Mb (parts by mass), ranges from 500 to 5,000. The binder composition for an electrode of the present invention provides an electric storage device having a large charge/discharge capacity and a low degree of capacity degradation due to repetition of a charge/discharge cycle.

Abstract: A radiation-sensitive resin composition includes: a first polymer having a first structural unit that includes an acid-labile group; a radiation-sensitive acid generator; and a first compound capable of forming a salt through a structural change in a molecule thereof upon irradiation with a radioactive ray. Basicity of the first compound preferably changes upon irradiation with a radioactive ray. The first compound preferably generates an acid upon irradiation with a radioactive ray. The first compound is preferably represented by formula (1). In formula (1), Ar1 represents a substituted or unsubstituted heteroarenediyl group having 4 to 30 ring atoms and having at least one nitrogen atom as a ring-constituting atom.

Abstract: Provided is a method for manufacturing an electrode material having a pressing step in which an irregularly shaped aggregate containing at least an active material is statically pressed in the presence of an alkali metal source and a solvent.

Abstract: Described herein are a method for manufacturing a three-dimensional object and a method for preparing data for a nozzle movement path(s) used in the same, and an apparatus for manufacturing the three-dimensional object and a computer for preparing data for nozzle movement paths used in the same. By repeating the step of forming an outer shell material portion constituting part of an outer shell of a three-dimensional object by ejecting a hard shaping material from a nozzle onto a stage, and the step of forming an inner core material portion constituting part of an inner core of the three-dimensional object by ejecting a soft shaping material from a nozzle to an inner region surrounded by the outer shell material portion, the three-dimensional object including the outer shell and the inner core respectively formed from the outer shell material portion and the inner core material portion in plural layers is formed.

Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

Abstract: The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.

Abstract: The present invention intends to provide a solid-state imaging device having minimum production costs and high detection accuracy.

Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.

Abstract: An optical filter including a base member having a layer containing near-infrared absorbing fine particles and a dielectric multilayer film, the optical filter satisfying a requirement that, in a wavelength range of 400 nm to 650 nm, an average of transmittance of any of light incident from a direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees, and light obliquely incident at an angle of 60 degrees is 45% or higher and lower than 85%; and a requirement that, in a wavelength range of 800 nm to 1,200 nm, an average of optical density (OD value) of any of light incident from the direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees with respect to the perpendicular direction, and light obliquely incident at an angle of 60 degrees with respect to the perpendicular direction is 1.7 or higher.

Abstract: A pattern-forming method includes forming a base pattern including a first polymer on a front face side. A composition is applied on at least a lateral face of the base pattern. The composition includes at least one polymer that is capable of interacting with the first polymer. The composition is heated such that a portion of the at least one polymer interacts with the first polymer and that a coating film is formed on the lateral face of the base pattern. Another portion of the at least one polymer not having interacted with the first polymer is removed to form a resist pattern. The base pattern in a planar view has a shape with a long axis and a short axis, and a ratio of lengths of the long axis to the short axis is no less than 1.5 and no greater than 10.