Patents Assigned to K.C. Tech Co., Ltd.
  • Publication number: 20180282581
    Abstract: A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.
    Type: Application
    Filed: February 15, 2018
    Publication date: October 4, 2018
    Applicant: K.C. TECH Co., Ltd.
    Inventors: Doo-sik MOON, Sang-hyun PARK, Bo-un YOON, Ho-young KIM, Se-jung PARK, Jae-hak LEE, Jin-myung HWANG
  • Patent number: 9991127
    Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: June 5, 2018
    Assignees: SAMSUNG ELECTRONICS CO., LTD., K.C. TECH CO., LTD.
    Inventors: Sang-hyun Park, Jae-hak Lee, Bo-hyeok Choi, Sang-kyun Kim, Won-ki Hur
  • Publication number: 20170320188
    Abstract: A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.
    Type: Application
    Filed: December 9, 2016
    Publication date: November 9, 2017
    Applicant: K.C.Tech Co., Ltd.
    Inventors: Young Kyu Kweon, Byoung Chaul Son, Moon Gi Cho, Joon Ho An
  • Publication number: 20170323807
    Abstract: Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a Chemical Mechanical Polishing (CMP) process on a substrate, a cleaning part for cleaning the substrate on which the polishing process is performed, and a substrate transferring part for transferring the substrate to the cleaning part before polishing the substrate in the polishing part. The substrate may be preparatorily cleaned in the cleaning part before the polishing process, and then enters the polishing part.
    Type: Application
    Filed: November 29, 2016
    Publication date: November 9, 2017
    Applicant: K.C.Tech Co., Ltd.
    Inventors: Young Kyu Kweon, Joon Ho An, Byoung Chaul Son, Jin Sung Rho
  • Publication number: 20170207100
    Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.
    Type: Application
    Filed: October 6, 2016
    Publication date: July 20, 2017
    Applicants: Samsung Electronics Co., Ltd., K.C. TECH Co., Ltd.
    Inventors: Sang-hyun Park, Jae-hak Lee, Bo-hyeok Choi, Sang-kyun Kim, Won-ki Hur
  • Patent number: 9704729
    Abstract: Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: July 11, 2017
    Assignee: K.C. TECH CO., LTD.
    Inventors: Moon Gi Cho, Jun Ho Son
  • Publication number: 20170183538
    Abstract: An additive composition and a positive polishing slurry composition including the additive composition are provided. The additive composition includes a cationic compound, an organic acid, a nonionic compound, and a pH adjuster.
    Type: Application
    Filed: December 15, 2016
    Publication date: June 29, 2017
    Applicant: K.C.Tech Co., Ltd.
    Inventors: Jang Kuk KWON, Sung Pyo LEE, Chang Gil KWON, Jun Ha HWANG
  • Publication number: 20170183537
    Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to a first aspect of the present invention comprises abrasive particles and an oxidant, polishes tungsten having a thickness of 10-1,000 ?, and improves the topography of tungsten. Additionally, the polishing slurry composition according to a second aspect of the present invention comprises: at least two abrasive particles among first abrasive particles, second abrasive particles and third abrasive particles; and an oxidant, wherein the primary particle size of the first abrasive particles is 20 nm or more and less than 45 nm, the primary particle size of the second abrasive particles is 45 nm or more and less than 130 nm, and the primary particle size of the third abrasive particles is 130 nm or more and less than 250 nm.
    Type: Application
    Filed: August 11, 2015
    Publication date: June 29, 2017
    Applicants: K.C. TECH CO., LTD, IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Joo Hyoung YOON, Seung Chul HONG, Young HO YOON, UnGyu PAIK, Ji Hoon SEO, Ki Jung KIM, Kang Cheon LEE
  • Publication number: 20170183539
    Abstract: An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a second dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.
    Type: Application
    Filed: December 21, 2016
    Publication date: June 29, 2017
    Applicant: K.C.Tech Co., Ltd.
    Inventors: Jang Kuk KWON, Sung Pyo LEE, Chang Gil KWON, Jun Ha HWANG
  • Publication number: 20170166780
    Abstract: An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one anionic compound among a copolymer with a functional group of a resonance structure, a carboxyl group-containing polymer and a carboxyl group-containing organic acid, a second dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a third dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.
    Type: Application
    Filed: December 8, 2016
    Publication date: June 15, 2017
    Applicant: K.C. Tech Co., Ltd.
    Inventors: Jang Kuk KWON, Sung Pyo Lee, Chang Gil Kwon, Jun Ha Hwang
  • Publication number: 20170051180
    Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.
    Type: Application
    Filed: January 23, 2015
    Publication date: February 23, 2017
    Applicant: K.C. Tech Co., Ltd.
    Inventors: Jang Kuk KWON, Chan Un JEON, Ki Hwa JUNG, Jung Yoon KIM, Nak Hyun CHOI, Seong Pyo LEE, Bo Hyeok CHOI
  • Publication number: 20170029664
    Abstract: A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.
    Type: Application
    Filed: July 20, 2016
    Publication date: February 2, 2017
    Applicant: K.C. Tech Co., Ltd.
    Inventors: Seung-Ho PARK, Ki-Hwa JUNG, Sang-Kyun KIM, Jun-Ha HWANG, Chang-Gil KWON, Seung-Yeop BAEK, Jae-Woo LEE, Ji-Sung LEE, Jae-Kwang CHOI, Jin-Myung HWANG
  • Publication number: 20170022391
    Abstract: A polishing slurry composition is provided. The polishing slurry composition includes at least two types of abrasive particles among first abrasive particles, second abrasive particles, and third abrasive particles, and an oxidizer. A peak-to-valley roughness Rpv decreases when a contact area between the abrasive particles and a tungsten-containing film increases.
    Type: Application
    Filed: July 8, 2016
    Publication date: January 26, 2017
    Applicant: K.C. Tech Co., Ltd.
    Inventors: Dong Kyu CHOI, Young Ho YOON, Hyun Goo KONG, Jin Sook HWANG, Han Teo PARK
  • Publication number: 20170009353
    Abstract: A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster.
    Type: Application
    Filed: June 22, 2016
    Publication date: January 12, 2017
    Applicant: K.C. Tech Co., Ltd.
    Inventors: Jin Sook HWANG, Hyun Goo KONG, Han Teo PARK
  • Patent number: 8968476
    Abstract: An atomic deposition apparatus is provided for simultaneously loading/unloading a plurality of substrates. The atomic deposition apparatus which may load/unload the plurality of substrates when transmitting the plurality of substrates to a process module, includes a loading/unloading module for loading/unloading a substrate, a process module including a plurality of process chambers for simultaneously receiving a plurality of substrates and performing a deposition process, each of the plurality of process chambers including a gas spraying unit having an exhaust portion by which an exhaust gas is drawn in from inside the process chamber and the drawn in gas is exhausted above the process chamber, and a transfer module including a transfer robot provided between the loading/unloading module and the process module, the transfer robot being adopted for simultaneously holding the plurality of substrates while transporting the substrate.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: March 3, 2015
    Assignee: K.C. Tech Co., Ltd.
    Inventors: In Chul Shin, Kyung Joon Kim
  • Patent number: 8939817
    Abstract: Provided is a membrane assembly of a carrier head in a chemical-mechanical polishing apparatus. The membrane assembly includes a main membrane and a circular ring. The main membrane has a wafer contacting surface in contact with a wafer while a chemical-mechanical polishing process is being performed. The circular ring is disposed at an edge portion of the main membrane and receives an air pressure to downwardly apply the air pressure to the main membrane at the edge portion.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: January 27, 2015
    Assignee: K.C. Tech Co., Ltd.
    Inventor: Jun Ho Son
  • Publication number: 20140366913
    Abstract: Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.
    Type: Application
    Filed: June 11, 2014
    Publication date: December 18, 2014
    Applicant: K.C. TECH CO., LTD.
    Inventors: Moon Gi CHO, Jun Ho SON
  • Patent number: 8882563
    Abstract: The invention relates to a chemical mechanical polishing system, comprising: at least one polishing platens rotatably installed with a platen pad mounted on its upper surface; a guide rail disposed along a predetermined path; a substrate carrier unit including a rotary union to downwardly press a substrate during a polishing process, the substrate carrier unit moving along the guide rail with loading the substrate; and a docking unit installed to be docked to the substrate carrier unit so as to supply air pressure to the rotary union which downwardly presses the substrate held by the substrate carrier unit, when the substrate carrier unit is positioned over the polishing platen, whereby even though the substrate carrier unit is moved to consecutively polish the substrate on the plural polishing platens, it substantially removes a phenomenon of the twisting of air pressure supply tubes due to the movement of the substrate carrier unit.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: November 11, 2014
    Assignees: Samsung Electronics Co., Ltd, K.C. Tech Co., Ltd.
    Inventors: Jae Phil Boo, Dong Soo Kim, Keon Sik Seo, Chan Woon Jeon, Jun Ho Ban, Ja Cheul Goo
  • Patent number: 8662956
    Abstract: Provided are a conditioner of a chemical mechanical polishing apparatus for polishing a substrate over a platen pad that rotates and a method thereof. The conditioner includes a disk holder, a piston rod, a housing, and a load sensor. The disk holder secures a conditioning disk that finely cuts a surface of the platen pad. The piston rod delivers a normal force to the disk holder. The housing covers at least a portion of the piston rod. The load sensor is installed to receive the normal force that the piston rod delivers to the piston rod and measuring the normal force.
    Type: Grant
    Filed: May 3, 2011
    Date of Patent: March 4, 2014
    Assignees: Samsung Electronics Co., Ltd., K.C. Tech Co., Ltd.
    Inventors: Keon Sik Seo, Jae Phil Boo, Dong Soo Kim, Ja Cheul Goo, Chan Woon Jeon, Jnn Ho Ban
  • Patent number: 8491682
    Abstract: Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.
    Type: Grant
    Filed: December 27, 2008
    Date of Patent: July 23, 2013
    Assignee: K.C. Tech Co., Ltd.
    Inventors: Suk Min Hong, Myung Won Suh, Yong Kuk Kim, Joon Ha Hwang, Jeong Yun Kim, Dong Hyun Kim