Patents Assigned to K.C. Tech Co., Ltd.
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Patent number: 10435587Abstract: A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.Type: GrantFiled: July 20, 2016Date of Patent: October 8, 2019Assignees: Samsung Electronics Co., Ltd., K.C. Tech Co., Ltd.Inventors: Seung-Ho Park, Ki-Hwa Jung, Sang-Kyun Kim, Jun-Ha Hwang, Chang-Gil Kwon, Seung-Yeop Baek, Jae-Woo Lee, Ji-Sung Lee, Jae-Kwang Choi, Jin-Myung Hwang
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Patent number: 10428242Abstract: A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.Type: GrantFiled: February 15, 2018Date of Patent: October 1, 2019Assignees: SAMSUNG ELECTRONICS CO., LTD., K.C. TECH Co., Ltd.Inventors: Doo-sik Moon, Sang-hyun Park, Bo-un Yoon, Ho-young Kim, Se-jung Park, Jae-hak Lee, Jin-myung Hwang
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Publication number: 20180282581Abstract: A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.Type: ApplicationFiled: February 15, 2018Publication date: October 4, 2018Applicant: K.C. TECH Co., Ltd.Inventors: Doo-sik MOON, Sang-hyun PARK, Bo-un YOON, Ho-young KIM, Se-jung PARK, Jae-hak LEE, Jin-myung HWANG
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Patent number: 9991127Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.Type: GrantFiled: October 6, 2016Date of Patent: June 5, 2018Assignees: SAMSUNG ELECTRONICS CO., LTD., K.C. TECH CO., LTD.Inventors: Sang-hyun Park, Jae-hak Lee, Bo-hyeok Choi, Sang-kyun Kim, Won-ki Hur
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Publication number: 20170323807Abstract: Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a Chemical Mechanical Polishing (CMP) process on a substrate, a cleaning part for cleaning the substrate on which the polishing process is performed, and a substrate transferring part for transferring the substrate to the cleaning part before polishing the substrate in the polishing part. The substrate may be preparatorily cleaned in the cleaning part before the polishing process, and then enters the polishing part.Type: ApplicationFiled: November 29, 2016Publication date: November 9, 2017Applicant: K.C.Tech Co., Ltd.Inventors: Young Kyu Kweon, Joon Ho An, Byoung Chaul Son, Jin Sung Rho
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Publication number: 20170320188Abstract: A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.Type: ApplicationFiled: December 9, 2016Publication date: November 9, 2017Applicant: K.C.Tech Co., Ltd.Inventors: Young Kyu Kweon, Byoung Chaul Son, Moon Gi Cho, Joon Ho An
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Publication number: 20170207100Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.Type: ApplicationFiled: October 6, 2016Publication date: July 20, 2017Applicants: Samsung Electronics Co., Ltd., K.C. TECH Co., Ltd.Inventors: Sang-hyun Park, Jae-hak Lee, Bo-hyeok Choi, Sang-kyun Kim, Won-ki Hur
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Patent number: 9704729Abstract: Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.Type: GrantFiled: June 11, 2014Date of Patent: July 11, 2017Assignee: K.C. TECH CO., LTD.Inventors: Moon Gi Cho, Jun Ho Son
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Publication number: 20170183537Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to a first aspect of the present invention comprises abrasive particles and an oxidant, polishes tungsten having a thickness of 10-1,000 ?, and improves the topography of tungsten. Additionally, the polishing slurry composition according to a second aspect of the present invention comprises: at least two abrasive particles among first abrasive particles, second abrasive particles and third abrasive particles; and an oxidant, wherein the primary particle size of the first abrasive particles is 20 nm or more and less than 45 nm, the primary particle size of the second abrasive particles is 45 nm or more and less than 130 nm, and the primary particle size of the third abrasive particles is 130 nm or more and less than 250 nm.Type: ApplicationFiled: August 11, 2015Publication date: June 29, 2017Applicants: K.C. TECH CO., LTD, IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Joo Hyoung YOON, Seung Chul HONG, Young HO YOON, UnGyu PAIK, Ji Hoon SEO, Ki Jung KIM, Kang Cheon LEE
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Publication number: 20170183539Abstract: An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a second dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.Type: ApplicationFiled: December 21, 2016Publication date: June 29, 2017Applicant: K.C.Tech Co., Ltd.Inventors: Jang Kuk KWON, Sung Pyo LEE, Chang Gil KWON, Jun Ha HWANG
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Publication number: 20170183538Abstract: An additive composition and a positive polishing slurry composition including the additive composition are provided. The additive composition includes a cationic compound, an organic acid, a nonionic compound, and a pH adjuster.Type: ApplicationFiled: December 15, 2016Publication date: June 29, 2017Applicant: K.C.Tech Co., Ltd.Inventors: Jang Kuk KWON, Sung Pyo LEE, Chang Gil KWON, Jun Ha HWANG
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Publication number: 20170166780Abstract: An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one anionic compound among a copolymer with a functional group of a resonance structure, a carboxyl group-containing polymer and a carboxyl group-containing organic acid, a second dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a third dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.Type: ApplicationFiled: December 8, 2016Publication date: June 15, 2017Applicant: K.C. Tech Co., Ltd.Inventors: Jang Kuk KWON, Sung Pyo Lee, Chang Gil Kwon, Jun Ha Hwang
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Publication number: 20170051180Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.Type: ApplicationFiled: January 23, 2015Publication date: February 23, 2017Applicant: K.C. Tech Co., Ltd.Inventors: Jang Kuk KWON, Chan Un JEON, Ki Hwa JUNG, Jung Yoon KIM, Nak Hyun CHOI, Seong Pyo LEE, Bo Hyeok CHOI
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Publication number: 20170029664Abstract: A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.Type: ApplicationFiled: July 20, 2016Publication date: February 2, 2017Applicant: K.C. Tech Co., Ltd.Inventors: Seung-Ho PARK, Ki-Hwa JUNG, Sang-Kyun KIM, Jun-Ha HWANG, Chang-Gil KWON, Seung-Yeop BAEK, Jae-Woo LEE, Ji-Sung LEE, Jae-Kwang CHOI, Jin-Myung HWANG
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Publication number: 20170022391Abstract: A polishing slurry composition is provided. The polishing slurry composition includes at least two types of abrasive particles among first abrasive particles, second abrasive particles, and third abrasive particles, and an oxidizer. A peak-to-valley roughness Rpv decreases when a contact area between the abrasive particles and a tungsten-containing film increases.Type: ApplicationFiled: July 8, 2016Publication date: January 26, 2017Applicant: K.C. Tech Co., Ltd.Inventors: Dong Kyu CHOI, Young Ho YOON, Hyun Goo KONG, Jin Sook HWANG, Han Teo PARK
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Publication number: 20170009353Abstract: A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster.Type: ApplicationFiled: June 22, 2016Publication date: January 12, 2017Applicant: K.C. Tech Co., Ltd.Inventors: Jin Sook HWANG, Hyun Goo KONG, Han Teo PARK
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Patent number: 8968476Abstract: An atomic deposition apparatus is provided for simultaneously loading/unloading a plurality of substrates. The atomic deposition apparatus which may load/unload the plurality of substrates when transmitting the plurality of substrates to a process module, includes a loading/unloading module for loading/unloading a substrate, a process module including a plurality of process chambers for simultaneously receiving a plurality of substrates and performing a deposition process, each of the plurality of process chambers including a gas spraying unit having an exhaust portion by which an exhaust gas is drawn in from inside the process chamber and the drawn in gas is exhausted above the process chamber, and a transfer module including a transfer robot provided between the loading/unloading module and the process module, the transfer robot being adopted for simultaneously holding the plurality of substrates while transporting the substrate.Type: GrantFiled: December 29, 2009Date of Patent: March 3, 2015Assignee: K.C. Tech Co., Ltd.Inventors: In Chul Shin, Kyung Joon Kim
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Patent number: 8939817Abstract: Provided is a membrane assembly of a carrier head in a chemical-mechanical polishing apparatus. The membrane assembly includes a main membrane and a circular ring. The main membrane has a wafer contacting surface in contact with a wafer while a chemical-mechanical polishing process is being performed. The circular ring is disposed at an edge portion of the main membrane and receives an air pressure to downwardly apply the air pressure to the main membrane at the edge portion.Type: GrantFiled: May 29, 2012Date of Patent: January 27, 2015Assignee: K.C. Tech Co., Ltd.Inventor: Jun Ho Son
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Publication number: 20140366913Abstract: Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.Type: ApplicationFiled: June 11, 2014Publication date: December 18, 2014Applicant: K.C. TECH CO., LTD.Inventors: Moon Gi CHO, Jun Ho SON
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Patent number: 8882563Abstract: The invention relates to a chemical mechanical polishing system, comprising: at least one polishing platens rotatably installed with a platen pad mounted on its upper surface; a guide rail disposed along a predetermined path; a substrate carrier unit including a rotary union to downwardly press a substrate during a polishing process, the substrate carrier unit moving along the guide rail with loading the substrate; and a docking unit installed to be docked to the substrate carrier unit so as to supply air pressure to the rotary union which downwardly presses the substrate held by the substrate carrier unit, when the substrate carrier unit is positioned over the polishing platen, whereby even though the substrate carrier unit is moved to consecutively polish the substrate on the plural polishing platens, it substantially removes a phenomenon of the twisting of air pressure supply tubes due to the movement of the substrate carrier unit.Type: GrantFiled: April 27, 2011Date of Patent: November 11, 2014Assignees: Samsung Electronics Co., Ltd, K.C. Tech Co., Ltd.Inventors: Jae Phil Boo, Dong Soo Kim, Keon Sik Seo, Chan Woon Jeon, Jun Ho Ban, Ja Cheul Goo