Abstract: The present invention relates a cooling device of the reverse Carnot cycle-type using a refrigerant, and an aerosol generation system including it. The cooling device includes a refrigerator of the reverse Carnot cycle-type, a cleaning medium conduit, a temperature sensor, and a heater. The intermediate portion of the cleaning medium conduit and the evaporator are wound like a coil in the same configuration so as to maximize the contacting area therebetween. The temperature sensor measures the temperature of the carbon dioxide discharged from the cooling device, and the heater is arranged to contact the evaporator of the refrigerator and the intermediate portion of the cleaning medium conduit so as to precisely adjust the liquefying rate of the carbon dioxide according to the temperature measured by the temperature sensor. The carbon dioxide is refrigerated at a temperature in the range of ?80° C. to ?100° C. through the cooling device, transformed into liquid phase.

Abstract: Disclosed is a nozzle for injecting sublimable solid particles, which is capable of minimizing consumption of the carrier gas and also maximizing cleaning efficiency. The nozzle comprises a base block having a space in which carrier gas is supplied through a gas supplying pipe; a sub-block having a space in which cleaning medium decompressed by a regulator is supplied through a cleaning medium supplying pipe; a first venturi block having a venturi path for adiabatically expanding the carrier gas supplied from the space of the base block, and a cleaning medium injection path communicating the venturi path and the space of the sub-block and the carrier gas passed through the venturi path; and a second venturi block having a venturi path for adiabatically expanding the mixed gas of the carrier gas and the cleaning medium.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: The present invention relates to a cooling device (30) of the reverse Carnot cycle-type using a refrigerant, and an areosol generation system including it. The cooling device (30) includes a refrigerator (310, 320) of the reverse Carnot cycle-type, a cleaning medium conduit (120), a temperature sensor (130), and a heater (140). The intermediate portion of the cleaning medium conduit and the evaporator are wound like a coil in the same configuration so as to maximize the contacting area therebetween. The temperature sensor (130) measures the temperature of the carbon dioxide discharged from the cooling device (30), and the heater (140) is arranged to contact the evaporator of the refrigerator and the intermediate portion of the cleaning medium conduit so as to precisely adjust the liquefying rate of the carbon dioxide according to the temperature measured by the temperature sensor. The carbon dioxide is refrigerated at a temperature in the range of ?80° C. to ?100° C.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snows containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 ?m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 ?m or less, particularly, the STI process.

Abstract: Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.