Abstract: A loading device of chemical mechanical polishing (CMP) equipment for processing semiconductor wafers is provided. The loading device includes a loading cup having a cup-like bath, a cup plate installed in the bath, and a loading plate supported on the cup plate for absorbing shock and seating the wafer. A driving device and a driving shaft horizontally pivot and vertically move the loading cup between a platen of a polishing apparatus and a spindle. An arm connects the loading cup and the driving shaft. At least one through hole is located in a mutually corresponding position of the bath, the cup plate, and the loading plate of the loading cup. A probe assembly optically detects a polished thickness at a polished point on the wafer.

Abstract: An atomic deposition apparatus is provided for simultaneously loading/unloading a plurality of substrates. The atomic deposition apparatus which may load/unload the plurality of substrates when transmitting the plurality of substrates to a process module, includes a loading/unloading module for loading/unloading a substrate, a process module including a plurality of process chambers for simultaneously receiving a plurality of substrates and performing a deposition process, each of the plurality of process chambers including a gas spraying unit having an exhaust portion by which an exhaust gas is drawn in from inside the process chamber and the drawn in gas is exhausted above the process chamber, and a transfer module including a transfer robot provided between the loading/unloading module and the process module, the transfer robot being adopted for simultaneously holding the plurality of substrates while transporting the substrate.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: A cleaning device for chemical-mechanical equipment, which includes: an irrotatable center shaft irrotatably coupled with a spindle which is rotated, the irrotatable center shaft including a first channel and a second channel formed in an interior of the irrotatable center shaft, cleaning liquid flowing into the first channel and compressed gas flowing into the second channel; and a nozzle block coupled with the spindle so as to revolve about the irrotatable center shaft above a polishing pad, the nozzle block mixing cleaning liquid supplied through the first channel with compressed gas supplied through the second channel so as to generate twin-fluid, and pressure-injecting the mixed twin-fluid on the polishing pad. Accordingly, cleaning liquid is pressurized so as to be rapidly injected on a polishing pad so that slurry particles and alien substances on the polishing pad are completely removed. Furthermore, wafer scratch can be prevented and the life of the polishing pad can also be increased.

Abstract: Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 ?m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 ?m or less, particularly, the STI process.

Abstract: An apparatus for measuring withwise ejection uniformity of a slit nozzle comprises a plurality of oil pressure measuring units that are arranged in parallel in a widthwise direction of the slit nozzle so as to measure ejection pressure of fluid to be ejected from an ejection port of the slit nozzle, each oil pressure measuring unit having an oil-pressure detection surface facing the ejection port of the slit nozzle; and a control unit that measures ejection pressure applied to the oil pressure measuring unit so as to calculate the uniformity to display.

Abstract: An apparatus for measuring ejection uniformity of a slit nozzle comprises a liquid distributor that distributes liquid for each predetermined interval with respect to a widthwise direction of the slit nozzle, the liquid being ejected from the slit nozzle; and a liquid measuring unit that measures an amount of liquid distributed by the liquid distributor.

Abstract: Disclosed are a method of manufacturing an electrode for generating plasma, which is capable of improving durability of the electrode and reducing production costs of the electrode, an electrode structure, and an atmospheric pressure plasma apparatus using the same. The plasma electrode structure comprises a pair of electrodes isolated from each other, a plasma generating space formed between the pair of electrodes, and an oxide coating layer formed uniformly on at least one of surfaces of the pair of electrodes.

Abstract: Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.

Abstract: The present invention relates a cooling device of the reverse Carnot cycle-type using a refrigerant, and an aerosol generation system including it. The cooling device includes a refrigerator of the reverse Carnot cycle-type, a cleaning medium conduit, a temperature sensor, and a heater. The intermediate portion of the cleaning medium conduit and the evaporator are wound like a coil in the same configuration so as to maximize the contacting area therebetween. The temperature sensor measures the temperature of the carbon dioxide discharged from the cooling device, and the heater is arranged to contact the evaporator of the refrigerator and the intermediate portion of the cleaning medium conduit so as to precisely adjust the liquefying rate of the carbon dioxide according to the temperature measured by the temperature sensor. The carbon dioxide is refrigerated at a temperature in the range of ?80° C. to ?100° C. through the cooling device, transformed into liquid phase.

Abstract: Disclosed is a nozzle for injecting sublimable solid particles, which is capable of minimizing consumption of the carrier gas and also maximizing cleaning efficiency. The nozzle comprises a base block having a space in which carrier gas is supplied through a gas supplying pipe; a sub-block having a space in which cleaning medium decompressed by a regulator is supplied through a cleaning medium supplying pipe; a first venturi block having a venturi path for adiabatically expanding the carrier gas supplied from the space of the base block, and a cleaning medium injection path communicating the venturi path and the space of the sub-block and the carrier gas passed through the venturi path; and a second venturi block having a venturi path for adiabatically expanding the mixed gas of the carrier gas and the cleaning medium.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: The present invention relates to a cooling device (30) of the reverse Carnot cycle-type using a refrigerant, and an areosol generation system including it. The cooling device (30) includes a refrigerator (310, 320) of the reverse Carnot cycle-type, a cleaning medium conduit (120), a temperature sensor (130), and a heater (140). The intermediate portion of the cleaning medium conduit and the evaporator are wound like a coil in the same configuration so as to maximize the contacting area therebetween. The temperature sensor (130) measures the temperature of the carbon dioxide discharged from the cooling device (30), and the heater (140) is arranged to contact the evaporator of the refrigerator and the intermediate portion of the cleaning medium conduit so as to precisely adjust the liquefying rate of the carbon dioxide according to the temperature measured by the temperature sensor. The carbon dioxide is refrigerated at a temperature in the range of ?80° C. to ?100° C.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snows containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.