Abstract: According to one embodiment, there is provided a data processing method. The method includes reading management information indicative of a playback and display procedure, acquiring a content from a certain storage position at a timing determined based on the management information, and performing playback and display of the content at a timing determined based on the management information.

Abstract: A video server controller has an instruction receiver, a command forming unit, and a command issuing unit. The instruction receiver receives the first instruction for recording the material data name of the program material data and the time code indicating the site of interruption of broadcasting of the program material data, and a second instruction for restarting broadcasting of the program material data from the interruption site. The command forming unit, upon receiving the first instruction, stores the material data name and the time code, and upon receiving the CUE UP WITH DATA command as the second instruction, which is standard to the VDCP protocol, the stored material data name and time code are read out. The command issuing unit issues the CUE UP WITH DATA command, the material data name, and the time code to the video server.

Abstract: In a memory cell array, memory cells each including a variable resistance element are arranged at crossing portions between a plurality of first wiring and a plurality of second wirings. A control circuit executes a set operation, a reset operation, and a training operation. In the set operation, a set pulse is applied to the variable resistance element to change the variable resistance element from a high resistance state to a low resistance state. In the reset operation, a reset pulse having an opposite polarity to the polarity of the set pulse is applied to the variable resistance element to change the variable resistance element from the low resistance state to the high resistance state. In the training operation, the set pulse and the reset pulse are continuously applied to the variable resistance element.

Abstract: A nonvolatile semiconductor memory device comprises a plurality of memory blocks, each including a plurality of cell units and each configured as a unit of execution of an erase operation. Each of the cell units comprises a memory string, a first transistor, a second transistor, and a diode. The first transistor has one end connected to one end of the memory string. The second transistor is provided between the other end of the memory string and a second line. The diode is provided between the other end of the first transistor and a first line. The diode comprises a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type.

Abstract: A medical image display apparatus according to an embodiment includes a display unit, a generating unit, and a display controlling unit. The display unit three-dimensionally displays a group of disparity images generated from three-dimensional medical image data. The generating unit determines a display position of the group of disparity images to be three-dimensionally displayed on the display unit in terms of a depth direction with respect to a display surface of the display unit and generates the group of disparity images from the three-dimensional medical image data so as to realize the determined display position. The display controlling unit three-dimensionally displays the group of disparity images and two-dimensionally displays a medical image different from the group of disparity images, on the display unit.

Abstract: According to one embodiment, an electronic apparatus includes: a presence determining module configured to determine at an interval whether a user is present based on image data output by a camera; a display power controller configured to turn on a display when the user is present and to turn off the display when the user is not present, based on a result of the presence determining module; and a detection interval controller configured to control the interval such that the interval is shorter when the display is off compared to when the display is on and the user is determined to be present.

Abstract: According to one embodiment, a nitride semiconductor device includes a first layer and a functional layer. The first layer is formed on an amorphous layer, includes aluminum nitride, and has a compressive strain or a tensile strain. The functional layer is formed on the first layer and includes a nitride semiconductor.

Abstract: A semiconductor device, comprising: a substrate; a plurality of gate finger electrodes which are arranged on the substrate; a plurality of source finger electrodes which are arranged on the substrate, each source finger electrode is close to the gate finger electrode; a plurality of drain finger electrodes which are arranged on the substrate, each drain finger electrode faces the source finger electrode via the gate finger electrode; a shield plate electrode which is arranged via an insulating layer over the drain finger electrode and the first surface of the substrate between the gate finger electrode and the drain finger electrode, is short-circuited to the source finger electrode, and shields electrically the gate finger electrode and the drain finger electrode from each other; and a slot VIA hole which is formed in the substrate under the source finger electrode and is connected to the source finger electrode.

Abstract: A head separated type imaging apparatus includes a head unit and a main unit which are separated, the main unit processing an image signal transmitted from the head unit. The main unit includes a first communication unit transmitting/receiving data to/from the head unit via wireless communication, a second communication unit transmitting/receiving data to/from the head unit via wired communication, and a control unit detecting whether the second communication unit is communicable, and continuing, when the first and second communication units are switched based on a detection result therefrom, transmission/reception of the data which is performed before the switching.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises memory cells in each of which are series-connected: a variable resistance element including a metal oxide; an electrode including a polysilicon layer and a SiGe layer formed between the polysilicon layer and the metal oxide; and a bipolar type current rectifying element.

Abstract: According to one embodiment, a semiconductor memory device includes semiconductor memory chips in which data requested to be written. The data has one or more pieces of first data in a predetermined unit. The device includes a write controller that writes the first data and redundancy information calculated by using a predetermined number of pieces of the first data and used for correcting an error in the predetermined number of pieces of the first data into different semiconductor memory chips; and a storage unit that stores identification information and region specifying information so as to be associated with each other. The identification information associates the first data and the redundancy information, and the region specifying information specifies a plurality of storage regions in the semiconductor memory chips to which the pieces of the first data and the redundancy information associated with each other are written.

Abstract: An ultrasound probe is provided that may improves specific desensitization of the frequency observed in the frequency characteristics and/or directional characteristics. The ultrasound probe related to this embodiment comprises an ultrasound transducer 10 and a plurality of acoustic matching layers 20 arranged in layers in the direction of irradiation irradiated from the ultrasound transducer 10, wherein, the plurality of acoustic matching layers 20 form a film and each of the adjacent acoustic impedance of longitudinal waves is substantially the same and has a different poisson's ratio.

Abstract: According to one embodiment, a solid-state imaging device includes an illuminance value calculating unit and an illuminance value output unit. The illuminance value calculating unit calculates an illuminance value based on an integration result of luminance values. The illuminance value output unit outputs the illuminance value calculated by the illuminance value calculating unit by setting, as a target, a subject image obtained through application of one of two or more illuminance measurement conditions. The two or more illuminance measurement conditions are set in advance by varying at least one of an electronic shutter time and an analog gain.

Abstract: A method for manufacturing a solid state image forming device in one embodiment includes forming a transparent resin layer on a semiconductor substrate having a plurality of photodiode layers formed thereon in a lattice, through R, G, and B color filters that are formed according to a Bayer arrangement; forming a plurality of first microlens mother dies on the transparent resin layer at the positions corresponding to the G color filters in such a manner that the outer peripheries thereof are separated from each other; forming a plurality of second microlens mother dies in such a manner that they are formed to fill the gap between the first microlens mother dies and the outer peripheries thereof are separated from each other; and etching the transparent resin layer with the plurality of first microlens mother dies and the plurality of second microlens mother dies being used as masks.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor chip, at least one second semiconductor chip, a first connector, and a second connector. The first semiconductor chip includes a first input pad, first protection circuit, and first internal circuit. The at least one second semiconductor chip includes a second input pad, second protection circuit, and second internal circuit. The first connector electrically connects the first and second input pads. The second connector connects the first protection circuit and first input pad of the first semiconductor chip. The second protection circuit of the at least one second semiconductor chip is not connected to the second input pad.

Abstract: According to one embodiment, a magnetic recording medium includes a data region and a servo region adjacent to the data region and including a magnetic recording layer, the magnetic recording layer including first and second patterned regions adjacent to each other, the first patterned region including a first nonmagnetic matrix and first magnetic particles dispersed in the first nonmagnetic matrix and having magnetization oriented in a first direction, the second patterned region includes a second nonmagnetic matrix and second magnetic particles dispersed in the second nonmagnetic matrix and having magnetization oriented in a second direction opposite to the first direction, sizes of the first magnetic particles being smaller than sizes of the second magnetic particles.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a first copper film in a first recess and a second recess having a width narrower than the first recess formed in an insulating layer above a substrate while the substrate is heated to a reflow temperature at which copper flows. The method includes forming a second copper film having an impurity concentration higher than the first copper film above the first copper film with lower flowability than the forming the first copper film.

Abstract: A semiconductor device includes: a substrate; a gate electrode which is arranged on a first surface of the substrate and has a plurality of gate finger electrodes, a source electrode which is arranged on the first surface of the substrate and has a plurality of source finger electrodes, the source finger electrode is close to the gate finger electrode; a drain electrode which is arranged on the first surface of the substrate and has a plurality of drain finger electrodes, the drain finger electrode faces the source finger electrode via the gate finger electrode; and a shield plate electrode which is arranged on the drain finger electrode and the first surface of the substrate between the gate finger electrode and the drain finger electrode via an insulating layer, is short-circuited to the source finger electrode, and shields electrically the gate finger electrode and the drain finger electrode from each other.

Abstract: A decoding device has a buffer configured in memory to store N code streams and N decoders connected in series. Each of N decoders decodes a corresponding code steam and sequentially generates partial symbols of M bit width each unit cycle. Among the N decoders, i (i>=2) stage decoders stores multiple probabilistic models in the memory. In each unit cycle, the decoder receives an input of i?1 partial symbols which contains partial symbols generated by the i?1 stage decoder in the former unit cycle, selects one probabilistic model among the multiple probabilistic models based on i?1 partial symbols which are entered previously, generates one partial symbol using previously selected probabilistic models, and outputs the previously generated one partial symbol along with previously entered i?1 partial symbols.

Abstract: A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.