Abstract: An LED bulb with a screw base; a cover forming an accommodation space with the screw base; an LED filament located in the accommodation space including a substrate comprising a top surface, a side surface, and an extension direction; a plurality of LED chips disposed on the first top surface; a first electrode arranged on the top surface, electrically connected to the plurality of LED chips; and a first clamp including first and second projecting prongs. The first electrode is clamped by the first and second projecting prongs within the accommodation space. The LED bulb has an imaginary rotational axis not parallel to the extension direction.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A solid-state light-emitting device includes: a substrate; an epitaxial layer structure on the substrate and including a first-type area and a second-type area; a first current blocking layer disposed on the epitaxial layer structure and located in the first-type area; a current spreading layer covering the first current blocking layer so that the first current blocking layer is located between the current spreading layer and the epitaxial layer structure; a first adhesive reinforcing layer disposed on a side of the current spreading layer away from the first current blocking layer and including a plurality of first through holes; a first electrode disposed on a side of the first adhesion reinforcing layer away from the current spreading layer and filled into the plurality of first through holes to electrically contact with the current spreading layer. Therefore, the light-emitting efficiency of the solid-state light-emitting device is improved.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A light-emitting diode (LED) and a backlight-type display device are provided. The light-emitting diode includes: a multi-color light emitting chip, an emission spectrum thereof including a first peak in a wavelength range of a first primary-color light and a second peak in a wavelength range of a second primary-color light, and an absolute value of a wavelength difference between the first and second peaks being greater than 50 nm; and a phosphor-containing layer, disposed over the multi-color light emitting chip and used to be excited to emit a third primary-color light. Owing to the LED adopts the multi-color light emitting chip which has the first and second peaks in different wavelength ranges and the absolute valve of the wavelength difference is greater than 50 nm, RGB three-primary-color lights can be outputted by adopting a single-color light phosphor powder with relatively high reliability. The backlight-type display device can obtain a high NTSC level.

Abstract: A semiconductor light-emitting device includes: a substrate, an epitaxial layer structure disposed on the substrate, a first current blocking layer disposed on the epitaxial layer structure, a second current blocking layer disposed on the epitaxial layer structure, a current spreading layer disposed on the epitaxial layer structure and covering the first current blocking layer; a first electrode disposed on a side of the current spreading layer facing away from the epitaxial layer structure, and a second electrode disposed on the epitaxial layer structure and covering the second current blocking layer. The first current blocking layer includes a first main blocking portion and a first extended blocking portion. The second current blocking layer includes a second main blocking portion and a second extended blocking portion. The second extended blocking portion includes spacings. The first extended blocking portion is formed with convex structures. The convex structures are aligned with the spacings.

Abstract: A light emitting diode package structure is provided. The light emitting diode package structure includes first and second chips. A value of an intensity of a peak wavelength of a first shoulder wave of the first chip divided by an intensity of a peak wavelength of a first main wave of the first chip is defined as a first intensity ratio. A value of an intensity of a peak wavelength of a second shoulder wave of the second chip divided by an intensity of a peak wavelength of a second main wave of the second chip is defined as a second intensity ratio. The first and second chips satisfy “a difference between the intensities of the peak wavelengths of the first and second main waves being less than or equal to 2.5 nanometers” and “a difference between the first and second intensity ratios being greater than 0.1”.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from ?0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.

Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a substrate, light emitting chips disposed on the substrate and electrically connected to the substrate, a first annular structure disposed on the substrate and around the light emitting chips, a first wavelength conversion layer disposed in the first annular structure and covering the light emitting chips, a second annular structure disposed on the substrate and around the light emitting chips and further being in contact with the first annular structure, and a second wavelength conversion layer disposed in the second annular structure and covering the first wavelength conversion layer and the light emitting chips. Wavelength conversion substances contained in the first wavelength conversion layer and the second wavelength conversion layer respectively are different in material. Therefore, the optoelectronic device can achieve improved uniformity of luminescence as well as light output quality.

Abstract: Disclosed is an LED assembly having an omnidirectional light field. The LED assembly has a transparent substrate with first and second surfaces facing to opposite orientations respectively. LED chips are mounted on the first surface and are electrically interconnected by a circuit. A transparent capsule with a phosphor dispersed therein is formed on the first surface and substantially encloses the circuit and the LED chips. First and second electrode plates are formed on the first or second surface, and electrically connected to the LED chips.

Abstract: An LED bulb with an LED assembly, including a substrate having a first top surface, longer side surface and shorter side surface; a mount disposed on the first top surface, having a first inner side surface and second inner side surface facing the first inner side surface; a plurality of LED chips on the first top surface, arranged between the first and second inner side surfaces, having a second top surface; an electrode plate formed on the mount, electrically connected to the plurality of LED chips with a third top surface which does not extend beyond the shorter side surface in a top view; and a phosphor layer covering the plurality of LED chips, mount, and electrode plate, without covering the side surfaces; and a cover covering the LED assembly. The third top surface is higher than the second top surface in an elevation based on the first top surface.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A chip-on-board type photoelectric device exemplarily includes: a package substrate, provided with a chip mounting region, a first electrode and a second electrode, the first and second electrodes being arranged spaced from each other at a periphery of the chip mounting region; first photoelectric chips, arranged in the chip mounting region to form inwardly concave strip-shaped patterns as mutually spaced first color temperature regions, and electrically connected between the first and second electrodes to form at least one first photoelectric chip string; and second photoelectric chips, arranged in the chip mounting region to form second color temperature regions. A light-emitting color temperature of each the second color temperature region is higher than that of each the first color temperature region. The second photoelectric chips are electrically connected between the first and second electrodes to form second photoelectric chip strings. A good uniformity of light mixing can be achieved.

Abstract: An LED package structure and a carrier thereof are provided. The LED package structure includes a carrier, a plurality of LED chips, and an encapsulating colloid. The carrier includes a substrate, a ring-shaped first wall disposed on the substrate, and a ring-shaped second wall stacked on the first wall. A portion of the substrate surrounded by the first wall is defined as a die-bonding region, and the first wall, the second wall, and the die-bonding region jointly define an accommodating space. The LED chips are mounted on the die-bonding region and are arranged in the accommodating space. The encapsulating colloid is filled within the accommodating space, and the LED chips are embedded in the encapsulating colloid.

Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a transparent substrate, an optoelectronic chip, electrodes and a wavelength conversion layer. The transparent substrate is provided with a hollow structure and an installation area, the hollow structure penetrates through two opposite surfaces of the transparent substrate and is located at a periphery of the installation area. The optoelectronic chip is arranged in the installation area. The electrodes are arranged on the transparent substrate and electrically connected to the optoelectronic chip; and the wavelength conversion layer is arranged on the two opposite surfaces of the transparent substrate and filled in the hollow structure, wherein the optoelectronic chip is covered by the wavelength conversion layer. The effect of reducing leakage rate of blue light of an optoelectronic device such as a LED packaging structure can be achieved.

Abstract: An LED package structure includes a substrate and a light-emitting array. The substrate has a die bond area, and the light-emitting array is disposed in the die bond area. Each first light-emitting unit of the light-emitting array includes a first light-emitting chip and a first wavelength conversion layer of the light-emitting chip, each second light-emitting unit of the light-emitting array includes a second light-emitting chip and a second wavelength conversion layer covering the second light-emitting chip. A first light beam includes a first emission light generated by exciting the first wavelength conversion layer, and the second light beam includes a second emission light generated by exciting the second wavelength conversion layer, and the difference between the first and second emission light peak wavelengths is at least 30 nm.

Abstract: A display device and a manufacturing method thereof are provided. The display device includes a circuit substrate, multiple light-emitting elements and a packaging material. The circuit substrate includes a first surface, a second surface opposite the first surface, and multiple through slots penetrating through the first and second surfaces. The through slots each are in a stepped form, and the circuit substrate is divided into a chip mounting area, multiple anodes, and a common cathode. The light-emitting elements include multiple light-emitting elements mounted on the circuit substrate along a straight line and electrically connected with the anodes respectively through wires. The packaging material covers the circuit substrate, the light-emitting elements and the wires. The display device has an excellent performance while achieving a small size.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: The application relates to an LED module, an LED holder, and a method for manufacturing the LED holder. The LED holder includes an insulating carrier and a lead frame. The insulating carrier includes a first sidewall, a second sidewall opposite to the first sidewall, and a partition portion positioned between the first sidewall and the second sidewall. The lead frame includes a first electrode and a second electrode positioned at two sides of the partition portion respectively. The first electrode includes a first bottom portion and a first wing portion obliquely connected with the first bottom portion. The second electrode includes a second bottom portion and a second wing portion obliquely connected with the second bottom portion. The LED holder can improve the reflectivity of the insulating carrier and can prevent the insulating carrier from aging.

Abstract: LED assemblies and related LED light bulbs. An LED assembly has a flexible, transparent substrate, an LED chip on the first surface and electrically connected to two adjacent conductive sections, a first wavelength conversion layer, formed on the first surface to substantially cover the LED chip, and a second wavelength conversion layer formed on the second surface. The flexible, transparent substrate has first and second surfaces opposite to each other, and several conductive sections, which are separately formed on the first surface.