Abstract: A semiconductor device is disclosed that includes a substrate and at least a first, second, third, and fourth vertical transistor supported by the substrate. Each transistor comprises a vertical channel, a polarity gate electrode forming a polarity gate adapted to act on a first portion of the channel to affect a polarity of the channel, and a control gate electrode forming a control gate adapted to act on a second portion of the channel to control the electrical conductivity of the channel. The polarity gate electrode and the control gate electrode of each one of the transistors extend laterally from their respective gate and in mutually opposite directions, and the transistors are laterally spaced from each other and arranged such that the control gate electrodes of the first and third transistor face each other and the control gate electrodes of the second and fourth transistor face each other.

Abstract: The present disclosure relates to systems and methods for cell recognition. At least one embodiment relates to a method for recognizing cell. The method includes receiving an image of the cell. The method also includes performing edge detection on the image of the cell. Further, the method includes detecting ridges within the image of the cell. In addition, the method includes quantifying an internal complexity of the cell by gauging a contrast of the ridges with an average of a Laplacian on the detected ridges.

Abstract: Disclosed herein is a system for determining a subject's stress condition. The system includes a stress test unit configured for: receiving features defining the subject and physiological signals sensed from the subject when performing a relaxation and a stressful test task; extracting normalization parameters from the physiological signals; and identifying stress-responsive physiological features. The system also includes a storage unit configured for: storing a plurality of stress models; and storing the subject's features, normalization parameters, and the stress-responsive physiological features.

Abstract: A memory cell is disclosed, comprising a static random-access memory, SRAM, bit cell, a first resistive memory element and a second resistive memory element. The first resistive memory element is connected to a first storage node of the SRAM bit cell and a first intermediate node, and the second resistive memory element connected to a second storage node of the SRAM bit cell and a second intermediate node. Each one of the first intermediate node and the second intermediate node is configured to be supplied with a first supply voltage via a first transistor and a second supply voltage via a second transistor, wherein the first transistor and the second transistor are complementary transistors separately controllable by a first word line and a second word line, respectively. Methods for operating such a memory cell are also disclosed.

Abstract: The present disclosure relates to a patterned structure, the structure comprising: i) a substrate, ii) a first layer on top of the substrate, comprising a filler material and a guiding material, wherein at least a top surface of the first layer comprises one or more zones of filler material and one or more zones of guiding material, and iii) a second layer on top of the first layer comprising a pattern of a first material, the pattern being either aligned or anti-aligned with the underlying one or more zones of guiding material; wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.

Abstract: A system for compressed sensing comprising: a compressive sampling module configured for providing a CS-sampled signal and a signal reconstruction module configured for receiving and allocating a first plurality of measurement windows comprising a number of samples from the CS-sampled signal, calculating a corresponding first plurality of reconstruction windows based on the first plurality of measurement windows and calculating a first version of a reconstructed signal based on the first plurality of reconstruction windows.

Abstract: A solid-state device configured to generate an electric signal indicative of a presence or an absence of a magnetic topological soliton is disclosed. The solid-state device includes a storage element configured to store a magnetic topological soliton. The storage element includes a topological insulator. The storage element also includes a magnetic strip arranged on the topological insulator. The solid-state device also includes a magnetic topological soliton detector configured to generate the electric signal indicative of the presence or the absence of the magnetic topological soliton in a detection region of the storage element. The magnetic topological soliton detector is adapted for detecting a spin-independent difference in tunneling amplitude, a difference in electrical resistance, or a difference in electrical conductivity through the topological insulator in the detection region due to the presence or the absence of the magnetic topological soliton in the detection region.

Abstract: The present disclosure relates to secure broker-mediated data analysis and prediction. One example embodiment includes a method. The method includes receiving, by a managing computing device, a plurality of datasets from client computing devices. The method also includes computing, by the managing computing device, a shared representation based on a shared function having one or more shared parameters. Further, the method includes transmitting, by the managing computing device, the shared representation and other data to the client computing devices. In addition, the method includes, based on the shared representation and the other data, the client computing devices update partial representations and individual functions with one or more individual parameters. Still further, the method includes determining, by the client computing devices, feedback values to provide to the managing computing device.

Abstract: Example embodiments relate to extreme ultraviolet absorbing alloys. One example embodiment includes an alloy. The alloy includes one or more first elements selected from: a first list consisting of: Ag, Ni, Co, and Fe; and a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt. The alloy also includes one or more second elements selected from: the first list, if the one or more first elements are not selected from the first list; and a third list consisting of Sb and Te. An atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list.

Abstract: An example method for making a reticle includes providing an assembly. The assembly includes an extreme ultraviolet mirror and a cavity overlaying at least a bottom part of the extreme ultraviolet mirror. The method also includes at least partially filling the cavity with an extreme ultraviolet absorbing structure that includes a metallic material that includes an element selected from Ni, Co, Sb, Ag, In, and Sn, by forming the extreme ultraviolet absorbing structure selectively in the cavity.

Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

Abstract: A p-type Tunnel Field-Effect Transistor comprises a drain p-type semiconductor region, a source n-type semiconductor region, and at least one gate stack. The source n-type semiconductor region comprises a lowly doped section with a length of at least 10 nm and with a doping level of n-type dopant elements below 5×1018 at/cm3 and, in contact with the lowly doped section, a highly doped section with a length between 1 monolayer and 20 nm and with a doping level of n-type dopant elements above 5×1018 at/cm3.

Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include at least a first magnetic bus, a second magnetic bus, and an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus.

Abstract: A method is provided for calculating a performance of a photovoltaic module comprising at least a first photovoltaic cell and a second photovoltaic cell. The method comprises calculating a heat flow between the first photovoltaic cell and the second photovoltaic cell using a first thermal equivalent circuit of the first photovoltaic cell and a second thermal equivalent circuit of the second photovoltaic cell, wherein at least one node of the first thermal equivalent circuit is connected to a corresponding node of the second thermal equivalent circuit by a thermal coupling resistance. The method may be used for calculating the influence of spatial and temporal variations in the operation conditions on the performance, such as the energy yield, of a photovoltaic module or a photovoltaic system.

Abstract: A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound pre-cursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.

Abstract: In an aspect of the disclosure, a stimulation device includes a probe attached to a first support. The probe includes at least one grating coupler for coupling light into the probe. The device further includes at least one optical source for providing an optical stimulation signal mounted on a second support, and at least one means for detachably attaching the first support to the second support. The position of the at least one optical source is aligned with the position of the at least one grating coupler to allow light emitted from the at least one optical source to be received by the at least one grating coupler.

Abstract: A brain interaction apparatus is provided. The apparatus comprises a plurality of filaments; and a brain invasive launcher having a plurality of launching channels extending in a longitudinal direction between a proximal end and a distal end thereof. Each launching channel is configured for holding one of the plurality of filaments moveably arranged therein. At least one of the plurality of filaments is provided with a steering tip affixed to a distal end thereof. The steering tip comprises a portion tapering in a longitudinal direction of the at least one of the plurality of filaments thereby narrowing toward a distal end of the steering tip. The tapered portion is rotationally asymmetrical about a longitudinal axis of the at least one of the plurality of filaments.

Abstract: A method for directing a self-assembly of a block copolymer comprising a first and a second block is provided. The method including: providing a substrate comprising at least one concavity therein, the concavity comprising at least a sidewall and a bottom, the bottom having a preferential wetting affinity for the second block with respect to the first block; grafting a first grafting material onto the sidewall, selectively with respect to the bottom, the first grafting material having a preferential wetting affinity for the first block with respect to the second block; grafting a second grafting material onto the bottom and optionally onto the sidewall, the second grafting material having a preferential wetting affinity towards the first block with respect to the second block; and providing the block copolymer on the substrate, at least within the at least one concavity.

Abstract: Three transistor two junction magnetoresistive random-access memory (MRAM) bit cells provided. An example MRAM bit cell includes a first magnetic tunnel junction, MTJ, connected to a first bit line. The MRAM bit cell also includes a second MTJ connected to a second bit line. In addition, the MRAM bit cell includes a first transistor connected to the first MTJ and to a ground conductor. The MRAM bit cell further includes a second transistor connected to the second MTJ and to the ground conductor. Additionally, the MRAM bit cell includes a third transistor connected to the first transistor and to the second transistor.

Abstract: A fluidic device for mixing a reagent fluid with a fluid sample comprises a supply channel having a reagent inlet, a sample inlet and a first reagent storage, coupled to the supply channel; a mixer for mixing the reagent with the fluid sample, having a mixer inlet coupled to the supply channel at a position in between the sample inlet and the first reagent storage; In a first stage, when the reagent fluid is supplied in the reagent inlet, the reagent is provided in the supply channel and the first reagent storage, and such that the reagent is thereafter stationed in the supply channel and the first reagent storage until a fluid sample is provided in the sample inlet. When the fluid sample is supplied in the sample inlet, the supplied fluid sample and the stationed reagent flows into the mixer thereby mixing both fluids.