Abstract: The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate.

Abstract: A Resistive Random Access Memory (RRAM) device and a method of its manufacture are disclosed. The RRAM device comprises a lower oxygen affinity bottom electrode, a hygroscopic solid-state dielectric layer, comprising hydroxyl groups, and a higher oxygen affinity top electrode. In some embodiments, the hygroscopic solid-state dielectric layer is a rare-earth metal oxide layer.

Abstract: The present disclosure relates to a tunable magnonic crystal device comprising a spin wave waveguide, a magnonic crystal structure in or on the spin wave waveguide, and a magneto-electric cell operably connected to the magnonic crystal structure. The magnonic crystal structure is adapted for selectively filtering a spin wave spectral component of a spin wave propagating through the spin wave waveguide so as to provide a filtered spin wave. The magneto-electric cell comprises an electrode for receiving a control voltage, and adjusting the control voltage controls a spectral parameter of the spectral component of the spin wave via an interaction, dependent on the control voltage, between the magneto-electric cell and a magnetic property of the magnonic crystal structure.

Abstract: The present disclosure relates to a digital frontend system for a radio device comprising a digital filter arranged for receiving digital quadrature signals and for filtering the digital quadrature signals and for outputting filtered quadrature signals; a conversion circuit arranged for receiving the filtered quadrature signals and for performing a rectangular to polar conversion of the filtered quadrature signals and for outputting a plurality of polar signals, characterized in that, the plurality of polar signals comprising an amplitude signal and quadrature phase signals.

Abstract: The present disclosure relates to a method for manufacturing pillar or hole structures in a layer of semiconductor device, and associated semiconductor structure. At least one embodiment relates to a method for manufacturing pillar structures in a layer of a semiconductor device. The pillar structures are arranged at positions forming a hexagonal matrix configuration. The method includes embedding alignment pillar structures in a backfill brush polymer layer. The method also includes providing a BCP layer on a substantially planar surface defined by an upper surface of the alignment pillar structures and the backfill brush polymer layer. Further, the method includes inducing polymer microphase separation of the BCP polymer layer into pillar structures of a first component of the BCP polymer layer embedded in a second component of the BCP polymer layer.

Abstract: Devices, systems, and methods for controlling acquisition of a signal representing a physiological measurement are described herein. An example device comprises: an input for receiving the signal in digital form, wherein the signal has been acquired by means of at least one electrode without galvanic contact between the electrode and the living being and has been processed by circuitry for acquisition of the signal in analog domain to refine the signal before the signal is converted from analog to digital domain; an adaptation decision module, being configured to determine whether a measure of signal quality indicates that an adaptation of the circuitry for acquisition of the signal in analog domain is beneficial for the robustness of the system and/or the quality of the obtained signals; wherein the adaptation decision module, is arranged to output a control signal for controlling a parameter affecting amplifier saturation in processing of the signal.

Abstract: Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force.

Abstract: The disclosure relates to wavelength-controlled directivity of all-dielectric optical nano-antennas. One example embodiment is an optical nanoantenna for directionally scattering light in a visible or a near-infrared spectral range. The optical nanoantenna includes a substrate. The optical nanoantenna also includes an antenna structure disposed on the substrate. The antenna structure includes a dielectric material having a refractive index that is higher than a refractive index of the substrate and a refractive index of a surrounding medium. The antenna structure includes a structure having two distinct end portions. The antenna structure is asymmetric with respect to at least one mirror reflection in a plane that is orthogonal to a plane of the substrate.

Abstract: The disclosure relates to a method for the fabrication of a thin-film solid-state battery with Ni(OH)2 electrode, battery cell, and battery. One example embodiment is a method for fabricating a thin-film solid-state battery cell on a substrate comprising a first current collector layer. The method includes depositing above the first current collector layer a first electrode layer. The first electrode layer is a nanoporous composite layer that includes a plurality of pores having pore walls. The first electrode layer includes a mixture of a dielectric material and an active electrode material. The method also includes depositing above the first electrode layer a porous dielectric layer. The method further includes depositing directly on the porous dielectric layer a second electrode layer. Depositing the second electrode layer includes depositing a porous Ni(OH)2 layer using an electrochemical deposition process.

Abstract: The present disclosure relates to systems and methods for cell recognition. At least one embodiment relates to a method for recognizing cell. The method includes receiving an image of the cell. The method also includes performing edge detection on the image of the cell. Further, the method includes detecting ridges within the image of the cell. In addition, the method includes quantifying an internal complexity of the cell by gauging a contrast of the ridges with an average of a Laplacian on the detected ridges.

Abstract: Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX2 layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.

Abstract: The present disclosure relates to a patterned structure, the structure comprising: i) a substrate, ii) a first layer on top of the substrate, comprising a filler material and a guiding material, wherein at least a top surface of the first layer comprises one or more zones of filler material and one or more zones of guiding material, and iii) a second layer on top of the first layer comprising a pattern of a first material, the pattern being either aligned or anti-aligned with the underlying one or more zones of guiding material; wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.

Abstract: A device and method for sorting objects immersed in a flowing medium are disclosed. An example device comprises a holographic imaging unit comprising one or more holographic imaging elements, a fluid handling unit comprising one or more microfluidic channels configured to conduct flowing medium along a corresponding holographic imaging element and at least one microfluidic switch arranged downstream of an imaging region in the microfluidic channel configured to direct objects in the flowing medium into a one of a plurality of outlets. The example device also comprises a processor configured to determine real-time characterizations of holographic diffraction images obtained for the moving objects. The processing unit is further configured to control the at least one microfluidic switch in response to the real-time characterizations.

Abstract: A method is provided for fabricating a thin film solid-state Li-ion battery comprising a first electrode layer, a solid electrolyte layer, and a second electrode layer. The method comprises depositing, on a substrate, an initial layer stack comprising a first layer comprising a first electrode material compound, and a second layer comprising an electrolyte material compound; and afterwards performing a lithiation step comprising incorporating Li in the first layer and in the second layer, thereby forming a stack of a first electrode layer and a solid electrolyte layer. The initial layer stack may further comprise a third layer comprising a second electrode material compound. By performing the lithiation step, Li is also incorporated in the third layer, such that a stack of a first electrode layer, a solid electrolyte layer, and a second electrode layer is formed. One or more of the first, second, or third layers may be Li-free.

Abstract: A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.

Abstract: Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force.

Abstract: A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same.

Abstract: A Conductive Bridge Random Access Memory (CBRAM) device comprising an insulating electrolyte element sandwiched between a cation supply electrode and a bottom electrode, whereby the conductivity ? of the cation provided by the cation supply electrode in the electrolyte element increases towards the bottom electrode.

Abstract: A method is provided for forming a feature of a target material on a substrate. The method including: forming a feature of a sacrificial material on the substrate; and forming the feature of the target material by a deposition process during which the feature of the sacrificial material is removed from the substrate by forming a volatile reaction product with a precursor of the deposition process, wherein the sacrificial material is replaced by the target material and the target material is selectively deposited on surface portions of the substrate, which portions were covered by the feature of the sacrificial material, to form the feature of the target material.

Abstract: A method is disclosed for operating a Conductive Bridge Random Access Memory (CBRAM) device that includes an electrolyte element sandwiched between a cation supply top electrode and a bottom electrode. The method comprises conditioning the CBRAM device by applying a forming current pulse having a pulse width (tf) of 100 ns or less and a pulse amplitude (If) of 10 uA or less, and when programming, setting the conditioned CBRAM device to a Low Resistance State (LRS) by applying a set current pulse having a pulse width (ts) of 100 ns or less and a pulse amplitude (Is) equal to or larger than the forming current pulse amplitude (If).