Abstract: Various exemplary embodiments of this disclosure provide parallel to serial conversion apparatuses that includes a bit-swapping circuit that generates bit-swapped parallel data by swapping bits of input parallel data, and a parallel to serial conversion circuit that acquires M1 and M2 bits of the bit-swapped parallel data in a first and a second mode, respectively. The parallel to serial conversion circuit generates serial data by arranging the acquired bits of the bit-swapped parallel data in a first specified order in the first mode and in a second specified order in the second mode The bit-swapping circuit swaps the bits of the input parallel data such that the parallel to serial conversion circuit acquires 1st to M1-th and 1st to M2-th bits of the input parallel data in the first and second modes, respectively, and arranges the acquired bits of the input parallel data in the same order.

Abstract: Time-interleaved analog-to-digital (AD) conversion circuit, which includes first and second AD converters that generate first and second digital signal sequences by converting an analog input signal into first and second digital signals with a first frequency at first and second timings mutually different with each other is disclosed. The AD conversion circuit further includes a FIFO that receives the first and second digital signal sequences, and a correction filter including first and second portions that are supplied with a common clock signal. The correction filter generates a first corrected digital signal sequence by adding the first synchronized digital signal sequence and the second synchronized digital signal sequence passed through the first portion of the correction filter, and a second corrected digital signal sequence by passing the second synchronized digital signal sequence through the second portion of the correction filter.

Abstract: A semiconductor integrated circuit has an internal circuit having an input terminal connected to a connection terminal, a protection circuit that discharges an over-voltage supplied to the connection terminal to a power line. The protection circuit includes a first discharge circuit connected to the connection terminal, a second discharge circuit connected to the connection terminal and discharges the over-voltage to the power line, and an over-voltage detect circuit that detects a discharge current flowing through the second discharge circuit and generates an over-voltage detect signal when the discharge current is detected. The first discharge circuit is disabled to discharge the over-voltage when the over-voltage detect signal is supplied.

Abstract: An output driver circuit including a pre-driver stage that receives a first data signal, the pre-driver stage including a plurality of first differential pairs that perform current subtraction to output a second data signal based on the first data signal, and an output driver stage electrically coupled to the pre-driver stage that receives the second data signal from the pre-driver stage, the output driver stage including a plurality of second differential pairs that transmit an output signal along transmission lines.

Abstract: The method of manufacturing the semiconductor device that includes a high voltage MOS transistor with high operating voltage under both high and low gate voltages with low-cost is disclosed. When manufacturing the high voltage MOS transistor, a portion of a gate insulation film is removed to form an opening that exposes an outside area of the active area, which is outside of the central area where a gate electrode will be formed. A shallow grade layer is formed by implanting impurities into an opening with an energy that does not permit penetration of impurity ions through the gate insulation film.

Abstract: An output driver circuit including a pre-driver stage that receives a first data signal, the pre-driver stage including a plurality of first differential pairs that perform current subtraction to output a second data signal based on the first data signal, and an output driver stage electrically coupled to the pre-driver stage that receives the second data signal from the pre-driver stage, the output driver stage including a plurality of second differential pairs that transmit an output signal along transmission lines.

Abstract: Various exemplary embodiments provide methods of controlling frame memory, memory control circuits, and image processing apparatuses including the memory control circuits. Data representing values of pixels constituting each of a plurality of frames are received in an order of the frames, and data representing values of pixels constituting a previous frame are read from the frame memory and data representing values of pixels constituting a next frame are written to the frame memory. By reading first data representing values of a portion of the pixels constituting the previous frame from the frame memory before receiving of data representing values of pixels constituting the next frame starts, a delay time before starting to output data representing values of pixels of the previous frame can be shortened.

Abstract: Exemplary embodiments of color conversion circuits and color conversion methods convert input color data into output color data. The input color data is positioned in a three-dimensional color space, which is divided into a plurality of unit cubes each having a fixed dimension. The input color data is converted by performing interpolations using conversion coefficients at vertexes of the unit cube within which the input color data is positioned. When the input color data is positioned on a gray axis of the color space, a substitution circuit substitutes some of the conversion coefficients such that the interpolation becomes a linear interpolation. As a result, it is assured that input color data positioned on the gray axis is converted to gray output color data.

Abstract: A switching-type power-supply which enables the switching with little power loss and a method of switching the switching-type power-supply are provided. The switching-type power-supply unit includes a transformer with primary, secondary, winding and control windings, a switch which switches supply of a primary current from a dotted terminal to a non-dotted terminal through the primary winding, a rectifying diode connected the secondary winding, a monitoring signal generation circuit with a diode and a resistor, the diode between GND and a dotted terminal of the control winding, the resistor between GND and a non-dotted terminal of the control winding, the monitoring signal generation circuit generating a monitoring signal at the dotted terminal of the control winding, and a control unit with a zero-point detector and a controller. The zero-point detector monitoring the monitoring signal and supplying a detection signal to the controller.

Abstract: An access area is set within an address space of a dynamic random access memory by arranging two or more complete columns of blocks, in which blocks of memory cells are arranged within an entirety of a specified range of row addresses, along a direction of column addresses. Each of the blocks includes memory cells positioned at a same row address and a specified number of consecutive column addresses. The total number of blocks arranged in the access area is just capable of storing the number of words of the data to be stored. The two or more complete columns of blocks are successively accessed by successively accessing the blocks arranged in each of the columns of blocks. Thereby, a refresh operation of the dynamic random access memory is made unnecessary.

Abstract: Various exemplary embodiments provide methods and apparatuses for generating test conditions that efficiently detect delay faults while preventing overkill. According to an exemplary embodiment, i) test timing correcting block sets test timing faster than the actual operation timing of a logical circuit to be tested, ii) logical simulation block performs simulation by using delay times of signal paths corrected by adding minimum slack margin, and iii) when the simulation indicates that an end-side flip-flop cannot acquire data after an expected transition of logical value, masking block generates mask data that masks data held in the end-side flip-flop.

Abstract: An exemplary semiconductor integrated circuit is formed on a surface of a semiconductor chip includes a circuit region and a dummy region on the surface of the semiconductor chip. The circuit region includes a plurality of circuit patterns, which form circuit elements of the semiconductor integrated circuit, in a plurality of pattern layers. The dummy region includes a plurality of character dummies, which do not contribute to an operation of the semiconductor integrated circuit. The character dummies have a fixed shape and dimension, and arranged in a character pattern layer selected from the plurality of pattern layers with a fixed pitch. The dummy region further includes an identification sign formed by connecting selected ones of the character dummies chosen from the plurality of the character dummies.

Abstract: Standard cell libraries and methods of designing semiconductor integrated circuits are provided. At least one of delay-adjusting cell data and load-capacitor cell data is stored in the cell library for a specified type standard cell in addition to the standard cell data. The specified type standard cell may be utilized as a delay-adjusting cell or a load-capacitor cell. Accordingly, precise adjustment of delay times during designing a semiconductor integrated circuit is enabled without requiring registering a new standard cell in the cell library. Semiconductor integrated circuits are also provided that are configured to allow precise adjustment of delay times in the semiconductor integrated circuits.

Abstract: In an output driver circuit, a replica circuit includes seventh and eighth transistors corresponding to first and second transistors, respectively, ninth and tenth transistors corresponding to third or fifth, and fourth or sixth transistors in a driver circuit, respectively, and a resistor corresponding to a termination resistor. A reference voltage and a voltage of a node between the ninth transistor and the resistor are input to an operational amplifier, and an output signal of the operational amplifier is input to gates of the first and seventh transistors.

Abstract: Data conversion circuits and methods of data conversion that enable to keep the continuity in the converted data while reducing a required memory capacity are disclosed. An exemplary conversion circuit includes a LUT that stores representative correction values and an interpolation circuit that generates conversion data by interpolating from representative correction values stored in cells of the LUT that surround an address corresponding to the combination of input signal levels. When the cells that surround the address include a pair of adjacent cells arranged along both sides of a diagonal line of the LUT, the interpolation circuit substitutes one of the representative correction values with a substituted representative correction value that indicates an opposite direction and a same amount of correction as indicated by the other one of the representative correction values stored in the adjacent cells, and then generates the conversion data.

Abstract: The main surface of a quartz component is divided by an offset into a first region having a larger height around an inner perimeter and a second region adjacent to the outer perimeter of the first region. Repeated restoration of a damaged component by forming a bulge on the first region and machining the bulge to make a flat surface while maintaining the offset enables long term use of the component.

Abstract: A timing detection circuit including a first timing detection circuit, a second detection circuit, and an output circuit is disclosed. The first detection circuit detects, among multiphase clocks having n mutually different phases and a frequency of k times the frequency of a reference clock, a closest clock having a clock edge closest to a valid edge of the synchronizing signal and generates first detect signal DET_A indicating the detected clock. The second timing detection circuit detects within which of k successive cycles of the representative clock selected from the multiphase clocks the valid edge of the synchronizing signal is positioned and generates second detect signal DET_B indicating the detected cycle. The output circuit receives the first detect signal and the second detect signal and outputs first output signal OUT_A and second output signal OUT_B.

Abstract: A semiconductor integrated circuit having a multilayer wiring structure is provided which includes: a top metal wiring layer (MTOP) including a plurality of top layer power supply wirings and a next-to-top metal wiring layer (MTOP-1) directly below the top metal wiring layer MTOP including a plurality of next-to-top layer power supply wirings. Each of the top layer and the next-to-top layer power supply wirings also includes first potential wirings for supplying a first potential to the circuit elements and second potential wirings for supplying a second potential to the circuit elements. The top layer power supply wirings and the next-to-top layer power supply wirings cross each other and have a top layer insulating film disposed between them. First and second contacts are provided in the insulating film for connecting the first potential wirings and second potential wirings in the top and the next-to-top metal wiring layers with each other.

Abstract: A semiconductor integrated circuit has an active mode and a sleep mode. The semiconductor integrated circuit is constructed by alternately connecting a plurality of combinational logic circuits and a plurality of flip-flops. The flip-flops include a retention flip-flop that is supplied with electric power and retains the data in the sleep mode, and a non-retention flip-flop that is not supplied with electric power during the sleep mode. The non-retention flip-flop includes an initializing circuit that initializes the non-retention flip-flop when the semiconductor integrated circuit is switched from the sleep mode to the active mode.

Abstract: A semiconductor integrated circuit having connection pads arranged over active elements is disclosed. The connection pad is divided into a probing area and a bonding area, and reinforcing structures are formed separately under the respective areas. The reinforcing structure under the probing area is formed using a number of wiring layers less than the number of wiring layers used for forming the reinforcing structure under the bonding area. As a result, the wiring layers under the probing area are efficiently utilized to forms wires for realizing the logical function of the integrated circuit.