Abstract: A metrology system configured to measure overlay errors on a sample is disclosed. The metrology system measures overlay error on the sample in a first direction and/or a second direction simultaneously or sequentially. The metrology system comprises an illumination sub-system configured to illuminate a hatched overlay target on the sample with one or more illumination lobes. The metrology system further comprises an objective lens and a detector at an image plane configured to image the hatched overlay target. A controller is configured to direct illumination source to generate the illumination lobes, receive images of the hatched overlay target, and calculate the overlay errors between a first layer of the sample and a second layer of the sample.

Abstract: A semiconductor review tool receives absolute Z-height values for the semiconductor wafer, such as a semiconductor wafer with a beveled edge. The absolute Z-height values can be determined by a semiconductor inspection tool. The semiconductor review tool reviews the semiconductor wafer within a Z-height based on the absolute Z-height values. Focus can be adjusted to within the Z-height.

Abstract: A broadband light source is disclosed. The broadband light source includes a rotatable gas containment structure. The broadband light source includes a rotational drive system configured to rotate the rotatable gas containment structure about the horizontal axis of rotation of the rotatable gas containment structure. The broadband light source includes a pump source configured to generate pump illumination and a reflector element configured to direct a portion of the pump illumination into the gas to sustain a plasma. The reflector is configured to collect a portion of broadband light emitted from the plasma.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: An auto-focusing system is disclosed. The system includes an illumination source. The system includes an aperture. The system includes a projection mask. The system includes a detector assembly. The system includes a relay system, the relay system being configured to optically couple illumination transmitted through the projection mask to an imaging system. The relay system also being configured to project one or more patterns from the projection mask onto a specimen and transmit an image of the projection mask from the specimen to the detector assembly. The system includes a controller including one or more processors configured to execute a set of program instructions. The program instructions being configured to cause the one or more processors to: receive one or more images of the projection mask from the detector assembly and determine quality of the one or more images of the projection mask.

Abstract: A system and method of measuring misregistration in the manufacture of semiconductor device wafers is disclosed. A first layer and the second layer are imaged in a first orientation with a misregistration metrology tool employing light having at least one first wavelength that causes images of both the first periodic structure and the second periodic structure to appear in at least two planes that are mutually separated by a perpendicular distance greater than 0.2 ?m. The first layer and the second layer are imaged in a second orientation with the misregistration metrology tool employing light having the at least one first wavelength that causes images of both the first periodic structure and the second periodic structure to appear in the at least two planes. At least one parameter of the misregistration metrology tool is adjusted based on the resulting analysis.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: A nonlinear crystal grating assembly including two integral nonlinear crystal grating structures having inverted crystal axes and having parallel spaced-apart mesas with predetermined mesa widths arranged such that, when assembled in an interdigitated configuration, the mesas of the two grating structures form an alternating grating pattern that is aligned with a propagation direction of input light, thereby creating a periodic structure for quasi-phase-matching (QPM). The nonlinear crystal grating structures are formed using strontium tetraborate, lithium triborate or another nonlinear crystal material. The nonlinear crystal grating assembly is utilized in a laser assembly in which fundamental wavelengths are doubled and/or summed using intermediate frequency conversion stages, and then a final frequency converting stage utilizes the nonlinear crystal grating assembly to double or sum one or more intermediate light beam frequencies to generate laser output light at high power and photon energy levels.

Abstract: An apparatus and method are provided. The apparatus includes an imaging device; a stage movable relative to the imaging device; an isolation plate provided between the imaging device and the stage, including a horizontal glass plate; and a plurality of interferometers in electronic communication with a processor. The plurality of interferometers include three interferometers disposed on the imaging device, configured to direct a first beam set in a first direction toward the horizontal glass plate; and three interferometers disposed on the stage, configured to direct a second beam set in a second direction toward the horizontal glass plate, the second direction being opposite to the first direction. The processor is configured to measure distances between the imaging device and the isolation plate and distances between the stage and the isolation plate based on the first beam set and the second beam set reflected from the horizontal glass plate.

Abstract: A system for monitoring one or more conditions of an automation system of a semiconductor factory includes one or more instrumented substrates, one or more sealable containers and one or more system servers. The one or more instrumented substrates include one or more sensors. The one or more sensors measure one or more conditions of the one or more instrumented substrates as the one or more sealable containers transport the one or more instrumented substrates through the semiconductor factory. The one or more sealable containers also receive sensor data from the one or more sensors included on the one or more instrumented substrates. The one or more system servers are configured to receive the sensor data from the one or more sealable containers. The one or more servers are configured to identify one or more deviations in the measured one or more conditions.

Abstract: A metrology system is disclosed. In one embodiment, the metrology system includes a controller communicatively coupled to a reference metrology tool and an optical metrology tool, the controller including one or more processors configured to: generate a geometric model for determining a profile of a test HAR structure from metrology data from a reference metrology tool; generate a material model for determining one or more material parameters of a test HAR structure from metrology data from the optical metrology tool; form a composite model from the geometric model and the material model; measure at least one additional test HAR structure with the optical metrology tool; and determine a profile of the at least one additional test HAR structure based on the composite model and metrology data from the optical metrology tool associated with the at least one HAR test structure.

Abstract: An optical inspection apparatus includes an illumination assembly, configured to direct optical radiation to illuminate a semiconductor wafer on which first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, such that at least one of the first and second target features has at least one dimension in the plane of the wafer that is less than an optical diffraction limit of the apparatus. An imaging assembly is configured to capture at least one image of the wafer, and a controller is configured to process the at least one image in order to identify respective locations of the first and second target features in the at least one image and to measure an overlay error between the first and second patterned layers responsively to a displacement between the respective locations.

Abstract: A reticle inspection system may include two or more inspection tools to generate two or more sets of inspection images for characterizing a reticle, where the two or more inspection tools include at least one reticle inspection tool providing inspection images of the reticle. The reticle inspection system may further include a controller to correlate data from the two or more sets of inspection images to positions on the reticle, detect one or more defects of interest on the reticle with the correlated data as inputs to a multi-input defect detection model, and output defect data associated with the defects of interest.

Abstract: A metrology system includes one or more through-focus imaging metrology sub-systems communicatively coupled to a controller having one or more processors configured to receive a plurality of training images captured at one or more focal positions. The one or more processors may generate a machine learning classifier based on the plurality of training images. The one or more processors may receive one or more target feature selections for one or more target overlay measurements corresponding to one or more target features. The one or more processors may determine one or more target focal positions based on the one or more target feature selections using the machine learning classifier. The one or more processors may receive one or more target images captured at the one or more target focal positions, the target images including the one or more target features of the target specimen, and determine overlay based thereon.

Abstract: A process chamber, such as for semiconductor processing equipment, is connected with a recovery unit. The recovery unit includes a first storage tank for buffer gas and a second storage tank for rare gas. Both storage tanks are connected with a column in the recovery unit. The recovery unit and process chamber can operate as a closed system. The rare gas can be transported at a variable flow rate while separation in the recovery unit operates at a constant flow condition.

Abstract: An inspection system may receive inspection datasets from a defect inspection system associated with inspection of one or more samples, where an inspection dataset of the plurality of inspection datasets associated with a defect includes values of two or more signal attributes and values of one or more context attributes. An inspection system may further label each of the inspection datasets with a class label based on respective positions of each of the inspection datasets in a signal space defined by the two or more signal attributes, where each class label corresponds to a region of the signal space. An inspection system may further segment the inspection datasets into two or more defect groups by training a classifier with the values of the context attributes and corresponding class labels for the inspection datasets, where the two or more defect groups are identified based on the trained classifier.

Abstract: A cantilever-type probe with multiple metallic coatings is disclosed. The cantilever-type probe includes at least one probe pin. A first metallic coating is disposed upon a tip of the probe pin, and a second metallic coating is disposed upon a root of the probe pin. The second metallic coating is in contact with the first metallic coating and comprises a softer (more flexible) metal than the first metallic coating.

Abstract: An optical element includes Strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency converting stage of a laser assembly to generate laser output light having a wavelength in the range of 125 nm to 183 nm. One or more fundamental light beams having fundamental wavelengths between 1 and 1.1 ?m are doubled and/or summed using multiple intermediate frequency conversion stages to generate one or more intermediate light beam frequencies (e.g., second through eighth harmonics, or sums thereof), and then the final frequency converting stage utilizes the optical element to either double a single intermediate light beam frequency or to sum two intermediate light beam frequencies to generate the desired laser output light at high power and photon energy levels. A method and inspection system incorporating the laser assembly is also described.

Abstract: A review system and operation method directs a beam of light toward a sample on a stage. The sample is a wafer level packaging wafer or a backend wafer. Defect review is performed based on the light reflected from the sample. The review system can use one or more of: a fluid supplied by an immersion subsystem that includes a fluid supply unit and a fluid removal unit; an illumination pattern for differential phase contrast; or ultraviolet or deep ultraviolet wavelengths.

Abstract: Systems for cleaning optical surfaces of overlay inspection systems are disclosed. In particular, systems for optical-path coupling of light for in-situ photochemical cleaning in projection imaging systems are disclosed. A system for cleaning optical surfaces of overlay inspection systems includes a first illumination source, a detector, a set of illumination optics, and a set of imaging optics. In some embodiments, the system may include at least one of a second illumination source and a third illumination source, each of which may be configured to cause or aid the removal of contaminants from one or more optical surfaces of the system.