Abstract: A method of inspection or metrology of four sides of a sample is disclosed. The method includes providing samples in a carrier at a first side of an imaging tool and moving the samples from the carrier to the imaging tool via a pick-and-place stage assembly. The method includes imaging first and second sides of the samples via first and second channels of the imaging tool and returning the samples to the carrier. The method includes rotating the carrier by 90 degrees and translating the carrier to an opposite side of the imaging tool and moving the samples individually from the carrier to the imaging tool. The method includes imaging a third and fourth side of the sample via the first and second channel of the imaging tool and returning the one or more samples from the imaging tool to the carrier.

Abstract: Methods and systems for providing weak pattern (or hotspot) detection and quantification are disclosed. A weak pattern detection and quantification system may include a wafer inspection tool configured to inspect a wafer and detect defects present on the wafer. The system may also include at least one processor in communication with the wafer inspection tool. The at least one processor may be configured to: perform pattern grouping on the detected defects based on design of the wafer; identify regions of interest based on the pattern grouping; identify weak patterns contained in the identified regions of interest, the weak patterns being patterns deviating from the design by an amount greater than a threshold; validate the weak patterns identified; and report the validated weak patterns or facilitate revision of the design of the wafer based on the validated weak patterns.

Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.

Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

Abstract: A system for characterizing a specimen is disclosed. In one embodiment, the system includes a characterization sub-system configured to acquire one or more images a specimen, and a controller communicatively coupled to the characterization sub-system. The controller may be configured to: receive from the characterization sub-system one or more training images of one or more defects of a training specimen; generate one or more augmented images of the one or more defects of the training specimen; generate a machine learning classifier based on the one or more augmented images of the one or more defects of the training specimen; receive from the characterization sub-system one or more target images of one or more target features of a target specimen; and determine one or more defects of the one or more target features with the machine learning classifier.

Abstract: A metrology target for use in measuring misregistration between layers of a semiconductor device including a first target structure placed on a first layer of a semiconductor device, the first target structure including a first plurality of unitary elements respectively located in at least four regions of the first target structure, the first plurality of elements being rotationally symmetric with respect to a first center of symmetry and at least a second target structure placed on at least a second layer of the semiconductor device, the second target structure including a second plurality of elements respectively located in at least four regions of the second target structure, the second plurality of elements being rotationally symmetric with respect to a second center of symmetry, the second center of symmetry being designed to be axially aligned with the first center of symmetry and corresponding ones of the second plurality of elements being located adjacent corresponding ones of the first plurality of e

Abstract: Defects of interest and nuisance can be separated into different segments which enables detection of the defects of interest in only one segment. A region of an image can be segmented into a plurality of segments. A range attribute of the segments can be determined. Thresholding can be used to select one of the segments from the range attribute. The segment that is selected can be dilated.

Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

Abstract: A semiconductor-inspection tool scans a semiconductor die using a plurality of optical modes. A plurality of defects on the semiconductor die are identified based on results of the scanning. Respective defects of the plurality of defects correspond to respective pixel sets of the semiconductor-inspection tool. The scanning fails to resolve the respective defects. The results include multi-dimensional data based on pixel intensity for the respective pixel sets, wherein each dimension of the multi-dimensional data corresponds to a distinct mode of the plurality of optical modes. A discriminant function is applied to the results to transform the multi-dimensional data for the respective pixel sets into respective scores. Based at least in part on the respective scores, the respective defects are divided into distinct classes.

Abstract: An inspection system is disclosed. In one embodiment, the inspection system includes an interferometer sub-system configured to acquire an interferogram of a sample. The inspection system may further include a controller communicatively coupled to the interferometer sub-system. The controller is configured to: receive the interferogram from the interferometer sub-system; generate a phase map of the sample based on the received interferogram, wherein the phase map includes a plurality of pixels; select a sub-set of pixels of the plurality of pixels of the phase map to be used for phase unwrapping procedures; perform one or more phase unwrapping procedures on the sub-set of pixels of the phase map to generate an unwrapped phase map; and generate a surface height map of the sample based on the unwrapped phase map.

Abstract: An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.

Abstract: A tunable filter may include an input focusing optic, an output focusing optic, a linearly-varying filter located at a back focal plane of the input focusing optic and a front focal plane of the output focusing optic, an input angular scanning component located at a front focal plane of the input focusing optic configured to receive an input beam, and an output angular scanning component located at a back focal plane of the output focusing optic. The input focusing optic may receive the input beam from the input angular scanning component and direct the input beam to the linearly-varying filter, where a position of the input beam on the linearly-varying filter is selectable based on an angle of the input angular scanning component. The output focusing optic may receive a filtered beam from the linearly-varying filter and direct the filtered beam to the output angular scanning component.

Abstract: Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.

Abstract: In some embodiments, a method is performed at a computer system of a manufacturer. The manufacturer operates a manufacturing facility that includes equipment from an equipment supplier. In the method, a request is received for electronic access by the equipment supplier to the manufacturing facility to perform a remote support activity for the equipment. The request is routed to predefined approvers. Approval of the request is received from the predefined approvers. In response to receiving approval of the request from the predefined approvers, a connection is automatically created between an electronic device in the manufacturing facility and a computer system for the equipment supplier. The connection is used for the remote support activity. Upon completion of the remote support activity, the connection is automatically terminated.

Abstract: A system and method for evaluating the reliability of semiconductor die packages are configured to sort a plurality of semiconductor dies with a Known Good Die (KGD) subsystem based on a comparison of an inline part average testing (I-PAT) score of each of the plurality of semiconductor dies to a plurality of I-PAT score thresholds, where the semiconductor die data includes the I-PAT score for each of the plurality of semiconductor dies, where the I-PAT score represents a weighted defectivity of the corresponding semiconductor die. The semiconductor dies may be filtered to remove at-risk semiconductor dies prior to sorting. The semiconductor die data may be received from a plurality of semiconductor die supplier subsystems. The KGD subsystem may transmit semiconductor die reliability data about the sorted plurality of semiconductor dies to a plurality of semiconductor die packager subsystems.

Abstract: An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.

Abstract: A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.

Abstract: A cleaning assembly is disclosed. The cleaning assembly includes a substrate. One or more patterns are formed on a bottom side of the substrate. One or more structures within the one or more patterns attract one or more particles from a chuck via at least one of electrostatic attraction or mechanical trapping when the substrate is positioned on the chuck.

Abstract: A misregistration measurement and region of interest selection system (MMRSS) for measuring misregistration between at least two layers on a wafer in the manufacture of semiconductor devices, the MMRSS including a set of misregistration metrology tools, including at least two misregistration metrology tools, and a misregistration analysis and region of interest selection engine operative to: analyze a plurality of misregistration measurement data sets associated with a set of regions of interest (ROIs) of at least one measurement site on the wafer and at least partially generated by at least one first misregistration metrology tool, and wherein each of the data sets is associated with a set of quality metrics, identify a recommended ROI and communicate the recommended ROI to at least one second misregistration metrology tool of the set of misregistration metrology tools, the second misregistration metrology tool being operative to generate misregistration metrology data associated with the recommended ROI.

Abstract: The present disclosure provides a magnetic immersion electron gun and a method of generating an electron beam using a magnetic immersion electron gun. The electron gun includes a magnetic lens forming a magnetic field, a cathode tip disposed in the magnetic field, and a multi-filament heater configured to directly heat the cathode tip to emit electrons through the magnetic lens. The multi-filament heater includes a first filament connected at each end to first and second positive terminals of a power source and a second filament connected at each end to first and second negative terminals of the power source. The first positive terminal, the second positive terminal, the first negative terminal, and the second negative terminal are arranged alternately around the cathode tip such that the first filament and the second filament intersect at the cathode tip and a resultant magnetic force applied to the cathode tip is reduced.