Abstract: The present application discloses a new technique which reduces the dimensionality of a feature model by re-use of data that has been obtained by a prior measurement. The data re-used from the prior measurement may range from parameters, such as geometrical dimensions, to more complex data that describe the electromagnetic scattering function of an underlying layer (for example, a local solution of the electric field properties).

Abstract: Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.

Abstract: Embodiments of the invention include an electron beam lithography device using a dynamically controllable photocathode capable of producing a patterned electron beam. One such implementation includes a dynamic pattern generator configurable to produce an electron beam having a desired image pattern impressed thereon. Such an electron beam pattern being enabled by selectively activating programmable photoemissive elements of the pattern generator. The apparatus further including an illumination source arranged to direct a light beam onto the dynamic pattern generator to produce the electron beam having the desired pattern. The electron beam being directed through associated electron optics configured to receive the electron beam from the dynamic pattern generator and direct the electron beam onto a target substrate mounted on a stage.

Abstract: A method for forming high resolution patterns on a substrate surface is disclosed. A photolithographic patterning tool is loaded with a substrate having a photoimagable layer. Multiple exposures to using interference patterns and developments are performed on the photoimagable layer to define a composite line pattern in the photoimagable layer. The composite line pattern having a greater pitch density than possible with single exposure with the same photolithographic patterning tool. The lines of the composite line pattern are selectively cut or trimmed at a plurality of locations to define a desired pattern in the photoimageable layer. The cuts can themselves be achieved with a plurality of photomasks or exposure to direct write tools to achieve densities beyond that allowed by k1>0.25 limit.

Abstract: One embodiment pertains to an apparatus for reflection electron beam lithography, including at least illumination electron-optics, an electron-reflective pattern generator, projection electron-optics, a moving stage holding a target substrate, control circuitry, and a deflection system. The illumination electron-optics is configured to form an illumination electron beam. The electron-reflective pattern generator configured to generate an electron-reflective pattern of pixels and to reflect the illumination electron beam using the pattern to form a patterned electron beam. The projection electron-optics is configured to project the patterned electron beam onto the moving target substrate. The control circuitry is configured to shift the generated pattern in discrete steps in synchronization with the stage motion. The deflection system is configured to deflect said projected patterned electron beam so as to compensate for said stage motion in between discrete shifts of said generated pattern.

Abstract: A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.

Abstract: One embodiment pertains to a method for reviewing a potential defect on a substrate from one electron image. An image of an area containing the potential defect is obtained using a charged-particle apparatus. At least three image segments within the image are determined. The three segments are transformably identical to each other, and one of said three segments includes the potential defect. Another embodiment pertains to a method for reviewing a potential defect on a substrate by obtaining an electron-beam image of a relatively large field of view containing a first image segment. The first image segment is substantially smaller than the field of view and includes a location of the potential defect. A comparison image segment within the field of view is determined. The comparison image segment is transformably identical to the first image segment. Other embodiments and features are also disclosed.

Abstract: A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NIR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

Abstract: A reduced size catadioptric objective and system is disclosed. The objective may be employed with light energy having a wavelength in the range of approximately 190 nanometers through the infrared light range. Elements are less than 100 mm in diameter. The objective comprises a focusing lens group configured to receive the light energy, at least one field lens oriented to receive focused light energy from the focusing lens group and provide intermediate light energy, and a Mangin mirror arrangement positioned to receive the intermediate light energy from the field lens and form controlled light energy for transmission to a specimen. The Mangin mirror arrangement imparts controlled light energy with a numerical aperture in excess of 0.65 and up to approximately 0.90, and the design may be employed in various environments.

Abstract: A relatively high spectral bandwidth objective employed for use in imaging a specimen and method for imaging a specimen is provided. The objective includes a lens group having at least one focusing lens configured to receive light energy and form an intermediate image, at least one field lens oriented to receive the intermediate image and provide intermediate light energy, and a Mangin mirror arrangement positioned to receive the intermediate light energy and apply light energy to the specimen. The objective may provide, in certain instances, a spectral bandwidth up to approximately 193 to 266 nanometers and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The field lens may include more than one lens and may be formed of a material different from at least one other lens in the objective.

Abstract: The present invention is directed to novel metrology marks and methods for their use. The marks comprise cross hashed overlay metrology marks formed on a substrate including a plurality of target regions. The mark including a first grating structure formed in one layer of a target region and including a second grating structure formed in another layer of the target region. The periodic features of the first and second grating structures are oriented substantially orthogonal one another to form a cross-hatched metrology target in the target region. Additionally, the patent discloses methods of employing the metrology marks to obtain overlay metrology measurements.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb; target C is designed to have an offset Xc; and target D is designed to have an offset Xd. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

Abstract: An electrical test method and apparatus are disclosed. In the method one or more ring oscillators are formed in one or more layers prior to formation of a metal 1 layer of a semiconductor wafer. The one or more layers comprise the formulation of transistors and local interconnects. One or more test structures are formed in one or more interconnect layers at or after the metal 1 of the semiconductor wafer. Each test structure is coupled to a corresponding one or more ring oscillators. A voltage is applied to one or more non-precision contacts to cause the ring oscillators to oscillate. At-speed performance of one or more test structures is determined from one or more measured signals obtained from the test structures.

Abstract: Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract: A system for illuminating a specimen are disclosed herein. In general, the system may include an illumination source configured to generate light with an uneven distribution at a pupil plane and field stop of the system, a lightpipe coupled for redistributing the light across the pupil plane and field stop, and at least one optical element configured to direct the redistributed light onto a specimen. The lightpipe may generally include a cone-shaped portion and a rectangular-shaped portion. The cone-shaped portion is configured for modifying an angular distribution of the generated light, so that the redistributed light is uniformly distributed across the pupil plane of the system. The rectangular-shaped portion is formed contiguous with the cone-shaped portion and configured for modifying a spatial distribution of the generated light, so that the redistributed light is uniformly distributed across a field stop of the system.

Abstract: Broadband radiation may be generated by supplying a gas mixture containing hydrogen and/or deuterium and/or helium and/or neon to an enclosure, generating a plasma inside the enclosure with the gas mixture. Broadband radiation generated as a result of the plasma discharge to a substrate may be optically coupled to a substrate located outside the enclosure.

Abstract: A relatively high spectral bandwidth objective employed for use in imaging a specimen and method for imaging a specimen is provided. The objective includes a lens group having at least one focusing lens configured to receive light energy and form focused light energy. The focused light energy forms an intermediate image. The objective further includes at least one field lens located in proximity to an intermediate image, and a catadioptric arrangement positioned to receive the intermediate light energy from the at and form controlled light energy. The catadioptric arrangement may include at least one Mangin element and can include a meniscus lens element.