Abstract: Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample.

Abstract: A substrate processing apparatus and method are disclosed.

Abstract: A reduced size catadioptric inspection system employing a catadioptric objective and immersion substance is disclosed. The objective may be employed with light energy having a wavelength in the range of approximately 190 nanometers through the infrared light range, and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The objective comprises a focusing lens group, a field lens, a Mangin mirror arrangement, and an immersion substance or liquid between the Mangin mirror arrangement and the specimen. A variable focal length optical system for use with the objective in the catadioptric inspection system is also disclosed.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: A laser illuminator and illumination method for use in an inspection system, such as a semiconductor wafer inspection system or photomask inspection system is provided. The design comprises generating fundamental frequency laser energy at different fundamental wavelengths, such as 998 nm, converting a portion of the fundamental frequency laser energy to 2nd harmonic frequency laser energy, further converting the 2nd harmonic frequency laser energy to 4th harmonic frequency laser energy, and mixing the 4th harmonic frequency laser energy with a portion of the fundamental frequency laser energy to produce laser energy at a sum frequency. Mixing is accomplished by non-critical phase matching in a crystal of Cesium Lithium Borate (CLBO).

Abstract: Methods and systems for binning defects detected on a specimen are provided. One method includes comparing a test image to reference images. The test image includes an image of one or more patterned features formed on the specimen proximate to a defect detected on the specimen. The reference images include images of one or more patterned features associated with different regions of interest within a device being formed on the specimen. If the one or more patterned features of the test image match the one or more patterned features of one of the reference images, the method includes assigning the defect to a bin corresponding to the region of interest associated with the reference image.

Abstract: A surface and edge inspection system and the method for inspecting a substrate are disclosed. An edge inspection tool performs edge inspection of one or more substrates while a surface inspection tool performs surface inspection of a different substrate. A recipe for the surface inspection may be modified based on the results of the edge inspection.

Abstract: Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb. Offset Xc is an opposite sign and differs from Xd. The offsets Xa, Xb, Xc and Xd are selected so that an overlay error, including the respective offset, is within a linear region of overlay values.

Abstract: Embodiments of the invention include a scatterometry target for use in determining the alignment between substrate layers. A target arrangement is formed on a substrate and comprises a plurality of target cells. Each cell has two layers of periodic features constructed such that an upper layer is arranged above a lower layer and configured so that the periodic features of the upper layer have an offset and/or different pitch than periodic features of the lower layer. The pitches are arranged to generate a periodic signal when the target is exposed to an illumination source. The target also includes disambiguation features arranged between the cells and configured to resolve ambiguities caused by the periodic signals generated by the cells when exposed to the illumination source.

Abstract: Substrate processing method and apparatus are disclosed. The substrate processing apparatus includes a non-contact air bearing chuck with a vacuum preload.

Abstract: A system and method for inspecting a multi-layer sample, such as a silicon wafer, is disclosed. The design reduces variations in total reflected energy due to thin film interference. The design includes illuminating the sample at two incident angle ranges, where the two incident angle ranges are such that variation in total reflected energy at a first incident angle range may be employed to balance variation in total reflected energy at a second incident angle range. Defects are detected using die-to-die subtraction of the sample illuminated at the two incident angle ranges.

Abstract: A method and apparatus for propagating charge through a time division and integration (TDI) sensor is provided. The method and apparatus may be used with the TDI sensor to inspect specimens, the TDI sensor operating to advance an accumulated charge between gates of the TDI sensor. The design comprises controlling voltage waveform shapes for waveforms advancing the accumulated charge between gates in a substantially nonsquare waveform, such as a composite, sinusoidal, or other shaped waveform. Controlling voltage waveform shapes operates at different voltage phases in adjacent gates to provide a substantially de minimis net voltage.

Abstract: Equipment front end module (EFEM) systems and methods for handling workpieces at EFEMs are disclosed. An equipment front end module (EFEM) system has an enclosure and a robot within the enclosure. The enclosure has two or more load ports, each being adapted to receive a front opening unified pod (FOUP). The robot is configured to move work pieces between the FOUP(s) and one or more work piece processing tools proximate the enclosure. The load ports are positioned relative to said robot such that said robot can move the work pieces between the tool and a FOUP at each load port with a simple R-theta motion or pure linear motion with respect to two axes.

Abstract: Photolithography masks, systems and methods and more particularly to photolithography masks systems and methods for making and using silicon dioxide mask substrates are disclosed. The mask generally includes a silicon-dioxide mask substrate having a front surface, a patterned layer disposed on the front surface, and a coating of a fluoride of an element of group IIA that covers the patterned layer. The coating reduces undesired crystal growth on the silicon dioxide mask substrate. Such masks can be incorporated into photolithography systems and used in photolithography methods wherein a layer of photoresist is formed on a substrate and to radiation that impinges on the mask. Such a mask can be fabricated, e.g., by forming a patterned layer on a front surface of a silicon dioxide mask substrate and covering the patterned layer with a coating of a fluoride of an element of group IIA.

Abstract: A metrology recipe includes dynamic instructions that allow a metrology tool to perform a secondary metrology operation on a test wafer when previous measurement data indicates a process issue with that test wafer. The metrology recipe can instruct the metrology tool to perform an efficient default metrology operation on all test wafers, and perform a more in-depth secondary metrology operation on only those wafers that warrant additional scrutiny. In this manner, critical metrology data can be captured with a minimum of effect on metrology throughput. The metrology data used to determine whether or not the secondary metrology operation is to be performed can be generated from default metrology operations within the same tool, or can be generated by measurements taken by a completely different tool. Such “external” metrology data can be received via a communications network, either directly or from a server on the network for processing the metrology data.

Abstract: A method for improving throughput in review of images from a charged particle beam microscopy tool and a charged particle beam microscopy tool are disclosed.

Abstract: A method for calibration of a substrate inspection tool is disclosed. The tool is used to inspect a standard substrate having simulated contamination defects with known characteristics. Performance of the tool in detecting the simulated contamination defects is determined. The tool exposes the standard substrate and simulated contamination defects to radiation having a wavelength of about 260 nanometers or less. The simulated contamination defects are stable over time under exposure to radiation having a wavelength of about 260 nanometers or less.

Abstract: A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.

Abstract: Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry.

Abstract: Apparatus and method for reducing the load on an automated material handling system during processing of materials are disclosed. A materials processing tool with one or more load ports is equipped with at least one movable buffer attached to the tool front end. The buffer is configured to receive a materials pod from the automated material handling system at a storage location and move the pod to one or more of the one or more of the load ports and/or receive a pod from one or more of the one or more load ports and move the pod to the storage location. Any pod in the buffer is accessible either manually or by the material handling system.