Abstract: In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target radiation onto an edge surface of a wafer, the radiation targeting assembly comprising a first expanded paraboloid or expanded ellipsoid reflector positioned adjacent the edge surface of the wafer, a reflected radiation collecting assembly that collects radiation reflected from the surface, a signal processing module to generate surface parameter data from the reflected radiation, and a defect detection module to analyze the surface parameter data to detect a defect on the surface.

Abstract: Disclosed is a semiconductor die having a plurality of dummy fillings positioned and sized to minimize defects during chemical mechanical polishing is disclosed. At least one of the dummy fillings is coupled to an underlying test structure. In a preferred embodiment, the semiconductor die also includes a plurality of conductive layers and a substrate. The underlying test structure includes a first layer portion formed from a first one of the plurality of conductive layer and a via coupling the first layer portion to the at least one dummy filling. In another aspect, the underlying test structure also has a via coupling the first layer portion to the substrate, and the underlying test structure comprises a plurality of layer portions and vias to form a multilevel test structure.

Abstract: Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

Abstract: A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract: Broadband radiation may be generated by supplying a gas mixture containing hydrogen and/or deuterium and/or helium and/or neon to an enclosure, generating a plasma inside the enclosure with the gas mixture. Broadband radiation generated as a result of the plasma discharge to a substrate may be optically coupled to a substrate located outside the enclosure.

Abstract: Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

Abstract: A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract: A relatively high spectral bandwidth objective employed for use in imaging a specimen and method for imaging a specimen is provided. The objective includes a lens group having at least one focusing lens configured to receive light energy and form focused light energy. The focused light energy forms an intermediate image. The objective further includes at least one field lens located in proximity to an intermediate image, and a catadioptric arrangement positioned to receive the intermediate light energy from the at and form controlled light energy. The catadioptric arrangement may include at least one Mangin element and can include a meniscus lens element.

Abstract: A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected from a group of defect level classifications that is specified by a recipe. Preferably, the at least one analysis method includes at least one of zonal defect distribution, automatic defect classification, spatial signature analysis, and excursion detection. The defect level classifications preferably include at least one of individual defect, defect cluster, and spatial signature analysis signature.

Abstract: Computer-implemented methods for detecting defects in reticle design data are provided. One method includes generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process. The method also includes generating second simulated images using the first simulated image. The second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process. The method further includes detecting defects in the reticle design data using the second simulated images. Another method includes the generating steps described above in addition to determining a rate of change in a characteristic of the second simulated images as a function of the different values. This method also includes detecting defects in the reticle design data based on the rate of change.

Abstract: Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample.

Abstract: A system for use with a reduced size catadioptric objective is disclosed. The system including the reduced size objective includes various subsystems to allow enhanced imaging, the subsystems including illumination, imaging, autofocus, positioning, sensor, data acquisition, and data analysis. The objective may be employed with light energy having a wavelength in the range of approximately 190 nanometers through the infrared light range, and elements of the objective are less than 100 mm in diameter. The objective comprises a focusing lens group and at least one field lens oriented to receive focused light energy from the focusing lens group and provide intermediate light energy. The objective also includes a Mangin mirror arrangement. The design imparts controlled light energy with a numerical aperture in excess of 0.65 and up to approximately 0.90 to a specimen for imaging purposes, and the design may be employed in various environments.

Abstract: A method and the instrument for characterization of the defects on a surface with Auger electron spectroscopy in a high vacuum environment are disclosed. Defects on the surface of a sample may be characterized with Auger electron spectroscopy in a high vacuum environment.

Abstract: Disclosed are methods and apparatus for inspecting a sub-resolution assist features (SRAF) on a reticle. A test flux measurement for a boundary area that encompasses a width and a length portion of a test SRAF is determined, and at least one reference flux measurement for one or more boundary areas of one or more reference SRAF's is determined. The test flux measurement is compared with the reference flux measurements. The comparison is used to then determine whether the test SRAF is undersized or oversized.

Abstract: A reduced size catadioptric inspection system employing a catadioptric objective and immersion substance is disclosed. The objective may be employed with light energy having a wavelength in the range of approximately 190 nanometers through the infrared light range, and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The objective comprises a focusing lens group, a field lens, a Mangin mirror arrangement, and an immersion substance or liquid between the Mangin mirror arrangement and the specimen. A variable focal length optical system for use with the objective in the catadioptric inspection system is also disclosed.

Abstract: A substrate processing apparatus and method are disclosed.

Abstract: A method comprises generating a data set comprising first surface roughness data from a first orientation and second surface roughness data from a second orientation and determining a roughness bias parameter from the first surface roughness data and the second surface roughness data.

Abstract: A wafer edge-defect detection system with a probe assembly having one or more capacitive plates conforming in edge shape to an edge shape of a wafer; and processing electronics for electronically driving the one or more capacitive plates and for sensing an electrical signal representing capacitance between each one or more plates and the wafer. Filtering and demodulation techniques enhance the signal to noise ratio.