Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: A laser illuminator and illumination method for use in an inspection system, such as a semiconductor wafer inspection system or photomask inspection system is provided. The design comprises generating fundamental frequency laser energy at different fundamental wavelengths, such as 998 nm, converting a portion of the fundamental frequency laser energy to 2nd harmonic frequency laser energy, further converting the 2nd harmonic frequency laser energy to 4th harmonic frequency laser energy, and mixing the 4th harmonic frequency laser energy with a portion of the fundamental frequency laser energy to produce laser energy at a sum frequency. Mixing is accomplished by non-critical phase matching in a crystal of Cesium Lithium Borate (CLBO).

Abstract: A sensor module having a package substrate, a sensor disposed within and electrically connected to the package substrate, an amplifier disposed within and electrically connected to the package substrate, and electrical traces within the package substrate for routing sensor signals from the sensor to the amplifier, and then from the amplifier to external electrical connectors on the package substrate.

Abstract: One aspect of the present invention is a method of monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. Another aspect of the present invention is a system configured for monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. One embodiment of the present invention includes a software program that can be implemented in a computer for optimizing the performance of a process tool for processing a workpiece.

Abstract: Methods and systems for binning defects detected on a specimen are provided. One method includes comparing a test image to reference images. The test image includes an image of one or more patterned features formed on the specimen proximate to a defect detected on the specimen. The reference images include images of one or more patterned features associated with different regions of interest within a device being formed on the specimen. If the one or more patterned features of the test image match the one or more patterned features of one of the reference images, the method includes assigning the defect to a bin corresponding to the region of interest associated with the reference image.

Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.

Abstract: A surface and edge inspection system and the method for inspecting a substrate are disclosed. An edge inspection tool performs edge inspection of one or more substrates while a surface inspection tool performs surface inspection of a different substrate. A recipe for the surface inspection may be modified based on the results of the edge inspection.

Abstract: The invention relates to a method of learning a knowledge-based database used in automatic defect classification. According to this method, the user is spared a series of entries as the system carries out an automatic learn mode, which requires a reduced number of user entries.

Abstract: Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.

Abstract: A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable polarization a polarizing relay assembly arranged to selectively permit the scattered light having a selected polarization orientation to pass along a detector optical axis to a light detection unit in the detection subsystem. They system also features a collector output width varying subsystem for varying the width of an output slit in response to changes in the location of the location scanned on the workpiece.

Abstract: Systems and methods for inspecting wafers are provided. One system includes a detection subsystem configured to separately and simultaneously detect light scattered from different portions of a single spot obliquely, or normally, illuminated on a wafer and to separately generate output responsive to the separately detected light that can be used to detect defects on the wafer. The system can, therefore, effectively perform a multi-spot type of inspection of the wafer using only a single obliquely or normally illuminated spot on the wafer.

Abstract: Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb. Offset Xc is an opposite sign and differs from Xd. The offsets Xa, Xb, Xc and Xd are selected so that an overlay error, including the respective offset, is within a linear region of overlay values.

Abstract: In one embodiment, an interferometer system comprises two unequal path interferometers assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, a wafer holder to receive an object in the cavity such that an optical path remains open at an outer annual area between the first reference flat and the second reference flat and at least one wafer holder motor coupled to the wafer holder such that an object may be tilted in the cavity as to allow for measurements of local areas of interest, and a radiation targeting assembly to direct a collimated radiation beam to the interferometer assembly, a radiation collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the collimated radiation beam, record interferograms formed by a plur

Abstract: A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.

Abstract: Disclosed are methods and apparatus for determining overlay error. Radiation that is scattered from each of a plurality of cells of a target is measured. Each cell includes at least a first grating structure formed by a first process and a second grating structure formed by a second process and wherein each cell has a predefined offset between such each cell's first and second grating structures. The first and second grating structures of the different cells have different predefined offsets, and each predefined offset of each cell is selected to cause one or more terms to be cancelled from a periodic function that represents radiation scattered and measured from each cell. The scattered radiation of each cell is represented with a periodic function having a plurality of unknowns parameters, including an unknown overlay error, and the unknown overlay error is determined based on the plurality of periodic functions for the plurality of cells.

Abstract: Various systems for measurement of a specimen are provided. One system includes a first optical subsystem, which is disposed within a purged environment. The purged environment may be provided by a differential purging subsystem. The first optical subsystem performs measurements using vacuum ultraviolet light. This system also includes a second optical subsystem, which is disposed within a non-purged environment. The second optical subsystem performs measurements using non-vacuum ultraviolet light. Another system includes two or more optical subsystems configured to perform measurements of a specimen using vacuum ultraviolet light. The system also includes a purging subsystem configured to maintain a purged environment around the two or more optical subsystems. The purging subsystem is also configured to maintain the same level of purging in both optical subsystems.

Abstract: A spectrometer having an electron beam generator for generating an electron beam that is directed at a sample. An electron beam positioner directs the electron beam onto a position of the sample, and thereby produces a secondary emitted stream from the sample, where the secondary emitted stream includes at least one of electrons and x-rays. An secondary emitted stream positioner positions the secondary emitted stream onto a detector array, which receives the secondary emitted stream and detects both the amounts and the received positions of the secondary emitted stream. A modulator modulates the electron beam that is directed onto the sample, and thereby sweeps the electron beam between a first position and a second position on the sample. An extractor is in signal communication with both the modulator and the detector array, and extracts a differential signal that represents a difference between the signals that are received from the first position and the signals that are received from the second position.

Abstract: An electron microscope includes an electron beam source, which produces an electron beam. Scan deflectors direct the electron beam in a pattern across a sample, which thereby emits electrons. The pattern includes line portions and retrace portions. A main detector receives the electrons emitted by the sample, and produces a main signal. Blankers redirect the electron beam into a reference detector during at least a portion of the retrace portions of the pattern. The reference detector receives the electron beam and produces a reference signal. A mixing circuit receives the main signal and the reference signal and adjusts the main signal based at least in part on the reference signal, thereby producing an adjusted signal. An image computer receives the adjusted signal and produces an image of the sample based at least in part on the line portions of the adjusted signal.

Abstract: An optical measurement apparatus and method a method for performing modulation spectroscopy measurement of a sample comprising: delivering an incident probe beam to a sample at a known spot; modulating reflectance of the probe beam with a pump beam which periodically forms a pump beam spot on the sample coincident with the probe beam spot; and monitoring a reflected probe beam with a detector: wherein the incident probe and pump beams are collinear; and wherein the incident beams are directed to be collinear by reflecting a beam from a facet of an optical waveguide transmitting the other beam.

Abstract: Embodiments of the invention include a scatterometry target for use in determining the alignment between substrate layers. A target arrangement is formed on a substrate and comprises a plurality of target cells. Each cell has two layers of periodic features constructed such that an upper layer is arranged above a lower layer and configured so that the periodic features of the upper layer have an offset and/or different pitch than periodic features of the lower layer. The pitches are arranged to generate a periodic signal when the target is exposed to an illumination source. The target also includes disambiguation features arranged between the cells and configured to resolve ambiguities caused by the periodic signals generated by the cells when exposed to the illumination source.