Abstract: Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated mediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3. It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body 3. the wafers W are then loaded into the reactor furnace body 3.

Abstract: The present invention includes a receiver, an intermittent frame synchronizing method and a portable remote terminal which can reduce power consumption and cost, while the accuracy of generation of intermittent reception timings is maintained. For example, in the receiver, the intermittent frame synchronizing method and the portable remote terminal, averaging member, in which separate values are set in two decoders, divides clock signals transmitted from slow clock generating member as a time measuring clock with separate periods, and averages the clock signals to output slot timing signals. The slot timing signals are counted by a saving counter, which outputs a coincidence signal when the constant value is reached. Upon receiving the coincidence signal, receiving member performs reception.

Abstract: A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.

Abstract: There is disclosed a photoelectric conversion method, a light receiving circuit, and an optical communication system, in which even if an average received light level varies, a constant output level of demodulated signal can always be obtained. In the photoelectric conversion method, the light receiving circuit and the optical communication system of the present invention, a light signal is received by a light receiving diode and converted to an electric signal. An alternating component is removed and a direct current component is taken out by a low-pass filter to detect an average received light level of the light, a difference of the average received light level and a preset reference voltage is amplified by a differential amplifier to output a control voltage of a variable gain amplifier, and the electric signal is amplified with a gain corresponding to the control voltage by the variable gain amplifier to obtain a demodulated signal.

Abstract: To carry out very clean and low-cost fluid processing on both the front and rear surfaces of an object to be processed without generating rubbing particles and without leakage of fluid. A retention member for the object to be processed 18 that retains the object to be processed 17 and a rear shielding plate 15 that prevents the rear surface of the object to be processed from becoming contaminated by excessive fluid flow are mechanically separated. The rear shielding plate 15 is fixed in like manner to a front shielding plate 11, only the retention member for the object to be processed 18 is allowed to rotate making it possible to rigidly connect a supply pipe 22 (that supplies fluid through the rear shielding plate 15) to the rear shielding plate 15. Further, a circulation system is provided that collects fluid which underwent front surface processing in a collection tube 13, circulates that fluid and then supplies it to the rear surface of the object to be processed from a supply pipe.

Abstract: Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated immediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3. It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body 3, the wafers W are then loaded Into the reactor furnace body 3.

Abstract: Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated immediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3.

Abstract: There is disclosed a despreading circuit which can reduce a circuit scale and power consumption. In the despreading circuit of the present invention, A/D converter converts a CDMA modulated analog signal to a digital signal of N bits, a searcher detects a synchronization phase from high-order small bits of the N bits and outputs synchronization phase information to a control circuit, the control circuit transmits a signal for allowing despreading to be performed to a sliding correlator based on the phase information, and the sliding correlator despreads the N bit digital signal outputted by the A/D converter and transmits the resulting correlation output as a demodulated signal to the outside.

Abstract: To carry out very clean and low-cost fluid processing on both the front and rear surfaces of an object to be processed without generating rubbing particles and without leakage of fluid.

Abstract: Particles are prevented from clinging to the back of a water in the notch alignment of the wafer, and the problems encountered when a plurality of wafers were aligned all at once are solved. Three support poles 105 are erected on a turntable 103. The substrate outer periphery 104b of wafers 104 is supported by the tapered portions of support pins 107 protruding from the support poles 105. The turntable 103 is driven by a single motor 106, and all of the wafers 104 are rotated at once. During rotation, the notches 104a of al the wafers 104 are detected by an optical sensor 116 provided to a sensor pole 117, and the angular position thereof is stored. The wafers 104 are rotated an the basis of the angular position data, and notch alignment is performed successively, starting with the bottom wafer 104.

Abstract: The present invention is to provide a relay system capable of covering a wide silent zone, repeating various kinds of signals with a simple configuration, and facilitating the system management. In such a relay system, a fixed central station converts into a radio-frequency signal a signal input from a public telecommunication network through a radio modulator, and transduces the radio-frequency signal into an optical signal for output to a plurality of fixed relay stations distributed in a silent zone. On the other hand, each of the fixed relay stations transduces the optical signal into a radio-frequency signal for radiation into the silent zone through a leakage coaxial cable.

Abstract: There is disclosed a photoelectric conversion method, a light receiving circuit, and an optical communication system, in which even if an average received light level varies, a constant output level of demodulated signal can always be obtained. In the photoelectric conversion method, the light receiving circuit and the optical communication system of the present invention, a light signal is received by a light receiving diode and converted to an electric signal. An alternating component is removed and a direct current component is taken out by a low-pass filter to detect an average received light level of the light, a difference of the average received light level and a preset reference voltage is amplified by a differential amplifier to output a control voltage of a variable gain amplifier, and the electric signal is amplified with a gain corresponding to the control voltage by the variable gain amplifier to obtain a demodulated signal.

Abstract: A hemispherical grain (HSG) formation process for enlarging the surface area of a capacitor electrode, wherein stable, defect-free HSG, having outstanding selectivity, is formed. An amorphous silicon layer, which constitutes a capacitor electrode, is formed on an Si wafer, on which is formed a silicon-based dielectric layer, which constitutes an interlevel dielectric layer. An HSG layer, in which there exists practically no defects, is formed on the amorphous silicon layer at a crystal nuclei formation temperature of under 620° C. Further, in accordance with properly controlling the crystal nuclei formation temperature, and the flow rate of monosilane (SiH4), which is supplied for crystal nuclei formation, it is possible to furnish selectivity such that HSG nuclei are formed solely on the amorphous silicon layer, without being formed on a silicon-based dielectric layer.

Abstract: Radio communication systems, e.g. cellular telephones, have employed a space diversity antenna system which includes a plurality of antennas. In the space diversity antenna system for use in the cellular telephone, since two antennas are positioned adjoining each other, the space diversity effect cannot be adequately provided. To solve this problem, the polarization diversity antenna system according to this invention incorporates a first antenna, a second antenna, and a conductive board on which the second antenna is fixed at a given position, thus preventing the current flowing in the conductive board from causing the reception characteristic of the second antenna to deteriorate.

Abstract: A wavelength division multiplex optical star coupler comprises an input port which inputs a first optical signal, a first optical coupler which divides the first optical signal input from the input port into a plurality of first optical signals, a plurality of input/output ports, each of which outputs one of the plurality of first optical signals divided by the first optical coupler and inputs a second optical signal, an output port which outputs the second optical signal, and a second optical coupler, provided between the input port and the first optical coupler or between the first optical coupler and the input/output ports, which provides the first optical signal to the input/output ports and the second optical signal to the output port.

Abstract: A time division duplex (TDD) portable telephone relay device (and TDD system employing the same) for use with a radio base station and a portable telephone terminal within a terminal building, includes first and second distributors, a synthesizer, a predetermined-size (e.g., relatively small, internal) base station section, a position detecting unit, a synchronous receive section, and an exclusive telephone line connecting unit. With such a structure, transmission/reception using a frequency channel, other than frequency channels assigned to a radio zone where the terminal building exists, is conducted between the portable telephone terminal within the terminal building and the radio base station through the predetermined-size base station section. The predetermined-size base station section executes the operation adapted to TDD based on a synchronous signal from the synchronous receive section.

Abstract: A slot array antenna with a cavity of a simple construction having a plurality of slots formed on a dielectric substrate and capable of providing good directional characteristics while minimizing inter-slots coupling. The slot array antenna (1) includes a power supply line in the form of a micro-strip line formed on one surface of the dielectric substrate, a slot antenna portion (10) with a plurality of slots (14a, 14b, 14c, 14d) formed on the other surface of the dielectric substrate in an array-like fashion so as to extend perpendicularly to the micro-strip line with the dielectric substrate interposed therebetween, and a reflector (40) with a cavity (42) having an opening disposed in opposition to a plane on which the plurality of slots (14a, 14b, 14c, 14d exist). In this case, if the cavity has a width narrow enough to cut off a frequency of radio waves to be used, the directionality of the slot array antenna 1 can be optimized.

Abstract: The present invention provides an economic optical conversion relay amplification system avoiding a beat noise in an uplink line of an optical transmission line of multibranching and multinode multiplexing type.

Abstract: A metal-oxide semiconductor field-effect transistor (MOSFET) amplifier circuit includes a compensation circuit with a low cost MOSFET and a constant current circuit providing a constant drain current of the MOSFET, which maintains an operational point of the amplifier at an optimal state at all times. The MOSFET amplifier circuit includes a first MOSFET, a constant current circuit including a variable resistor, an operational amplifier, a power supply and a resistor, a second MOSFET having a constant current generated by the constant current circuit as a drain current thereof, and a voltage control circuit including operational amplifiers and resistors for applying a gate source voltage of the second MOSFET to the first MOSFET as a gate-source voltage thereof.

Abstract: A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.