Abstract: The invention relates to a fluid circulation device comprising a casing containing an electric machine, a cycle-gas circuit subjecting the cycle gas to a change between a minimum pressure and a maximum pressure, a cycle-gas drive member rotationally coupled to the electric machine, an electrical junction box through which there passes electric circuitry having one end connected to the electric machine and one end connected to an electrical coupling open to the outside, the device comprising a cycle-gas conveying pipe connected to a portion of the circuit in which the cycle gas is at a pressure higher than the minimum pressure and to the inside of the junction box, the junction box comprising a passage for communicating with the inside of the casing, the conveying pipe, the passage and the return pipe being configured to bleed a fraction of the cycle gas from the circuit and pass it through the junction box with a view to cooling same before returning to the circuit.

Abstract: A method of the vapor-phase deposition of a sulfide layer of a transition metal by ALD according to the following cycle: exposing a substrate to a precursor of the transition metal, whereby an intermediate layer is formed, purging the reactor, exposing the intermediate layer to a precursor of sulfur, purging the reactor, the substrate being at a temperature in the range from 20° C. to 250° C. during the cycle, where the cycle can be repeated several times with the same precursors or with different precursors, the precursor of the transition metal being selected from among molybdenum oxyhalides, tungsten oxyhalides, vanadium halides, niobium halides, and tantalum halides.

Abstract: Method for manufacturing an aluminium alloy part by additive manufacturing that includes a step in which a layer of a mixture of powders is locally melted then solidified, wherein the mixture of powders includes: first particles that include at least 80 wt. % aluminium and up to 20 wt. % one or more additional elements, and second particles of ZrSi2, the mixture of powders including 1.8 wt. % to 4 wt. % second particles.

Abstract: A decontamination paste comprising at least one inorganic viscosifier selected from clays, at least one compound in the form of fibers and optionally further one or more optional components, the remainder being of solvent. A method for decontaminating a substrate made of a solid material using the paste, the substrate being contaminated by at least one contaminant species referred to as the labile contaminant species and/or by at least one contaminant species referred to as the surface contaminant species located on one of the surfaces thereof, and/or by at least one contaminant species referred to as the subsurface contaminating species located just below said surface, and/or by at least one contaminant species located under the surface in the depth of the substrate.

Abstract: A method of polishing a semiconductor substrate, including: a) a step of multiple implantations of ions from an upper surface of the substrate, to modify the material of an upper portion of the substrate, the multiple implantation step comprising a plurality of successive implantations under different respective implantation orientations; and b) a step of selective removal of the upper portion of the substrate.

Abstract: An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Abstract: A garment arrangement includes a garment having an elongated garment portion provided with at least one garment connection portion, and an attachment means configured to be releasably connected to said garment connection portion. The attachment means is configured to be movable along the extension of said elongated garment portion. A method is also provided.

Abstract: A light-emitting diode is provided, including: a first layer of n-doped AlX1Ga(1-X1-Y1)InY1N, with X1>0 and X1+Y1?1; a second layer of p-doped AlX2Ga(1-X2-Y2)InY2N, with X2>0 and X2+Y2?1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

Abstract: An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2: (R1)C?N ??[Formula 1] wherein in Formula 1, R1 is a C2 to C3 linear or branched perfluoroalkyl group, (R2)(R3)C?NH ??[Formula 2] wherein in Formula 2, each of R2 and R3 is independently a C1 to C2 linear perfluoroalkyl group.

Abstract: Methods, apparatus and technique embodiments localize objects using antialiasing such as for rendering an object with an effect for a virtual try on (VTO) experience. An example system comprises a nail localization engine including computational circuitry to localize one or more nail objects in an input image of a hand or foot via one or more deep neural networks, wherein the one or more deep neural networks is configured for antialiasing in each of the encoder and decoder components; and a rendering component including computational circuitry to render an output image simulating a nail product or nail service applied to the one or more nail objects, responsive to the localizing by the nail localization engine, to provide a virtual try on (VTO) experience. In an embodiment, respective blur operators in each of the encoders and decoders disperse values to neighboring regions to counteract shift variance.

Abstract: Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MS2 with M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.

Abstract: A method for depositing a film on a substrate, which includes the steps of forming a film using a liquid composition that includes a neutral surfactant and a charged lamellar compound, placing the film in contact with the substrate and depositing the film on substrate. Also, a process for analyzing a substrate onto which a film has been deposited by the method.

Abstract: A method including generating an initialization vector, then producing a new mask using the generated initialization vector and using a secret key, masking a datum to be written to an internal cache memory using the constructed new mask, to obtain a masked datum, storing, in a given word of the internal cache memory, the masked datum and the generated initialization vector, and unmasking the masked datum, this including extracting the initialization vector contained in the word, reconstructing the mask using the extracted initialization vector and using the secret key, then unmasking the masked datum using the new mask thus reconstructed.

Abstract: Optoelectronic device including: a plurality of diodes each including a portion of a stack of first and second semiconductor layers doped according to opposite types, a portion of the first layer of each diode being coupled to a first electrode; trenches running through the stack; a conductive layer arranged against side walls of the trenches, insulated from the stack, coupled to the second electrodes and which is interrupted in such a way that portions of the conductive layer arranged around each of the diodes are insulated from other portions of the conductive layer arranged around the other diodes; conductive portions arranged in the trenches, insulated from the electrically conductive layer and coupled to one another and to a third electrode; bottom walls of the trenches being formed at least by the second electrodes.

Abstract: Modulation system 10 configured to control modulation of a signal, the system comprising: an optical modulator configured to receive: an input signal formed by a carrier SOE, SOE1, SOE2, and a modulation signal SM, SM1, SM2, a cooling device 12, 12-1, 12-2 configured to cool the optical modulator to a temperature greater than or equal to 10 K, preferably greater than or equal to 40 K, and to cool the optical modulator to a temperature less than or equal to 90 K, preferably less than or equal to 80 K.

Abstract: A method for solid-phase extraction and/or separation of one or more compounds of interest from a liquid sample which including: integrating a self-supporting porous monolith in a fluid duct wherein the self-supporting porous monolith is stationary in the fluid duct during the method and forms a filter in the fluid duct; passing the sample at least once through the porous monolith in the fluid duct over at least one portion of the porous monolith, the self-supporting porous monolith having a largest dimension less than or equal to 3 mm transverse to the fluid duct, the fluid duct having one or more open ends prior to integration, the or at least one of the ends remaining open during the step of integrating the porous monolith.