Patents Assigned to Lam Research Corporation
  • Patent number: 11508609
    Abstract: Some examples provide a vacuum wafer chuck assembly for supporting a wafer. An example chuck assembly comprises a chuck hub and a centering hub disposed within the chuck hub. Chuck arms are mounted to the chuck hub, with each chuck arm extending radially between a proximal end adjacent the chuck hub, and a distal end remote therefrom. A plurality of centering cams is provided, each cam mounted at or towards a distal end of a chuck arm and being movable radially inwardly or outwardly relative to the centering hub to engage or release an edge of a supported wafer in response to a rotational movement of the centering hub. At least one vacuum pad is provided for supporting the wafer during a wafer centering or wafer processing operation.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: November 22, 2022
    Assignee: Lam Research Corporation
    Inventors: Aaron Louis LaBrie, Claudiu Valentin Puha
  • Publication number: 20220365434
    Abstract: The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
    Type: Application
    Filed: October 1, 2020
    Publication date: November 17, 2022
    Applicant: Lam Research Corporation
    Inventors: Katie Lynn Nardi, Timothy William Weidman, Chenghao Wu, Kevin Li Gu, Boris Volosskiy
  • Publication number: 20220362803
    Abstract: Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.
    Type: Application
    Filed: October 15, 2020
    Publication date: November 17, 2022
    Applicant: Lam Research Corporation
    Inventors: Eric A. Hudson, Chia-Chun Wang, Sumit Agarwal, Ryan James Gasvoda
  • Patent number: 11495486
    Abstract: Semiconductor processing tools are provided that include an upper support framework, a plurality of semiconductor processing chambers arranged along a first axis, a linear guide system fixedly supported by the upper support framework and extending along a second axis substantially parallel to the first axis, and a carriage. Each chamber has a base portion fixedly mounted relative to the upper support framework and a removable top cover with one or more hoisting features. The carriage includes a hoist arm configured to pivot about a vertical axis that is substantially perpendicular to the second axis, the carriage is configured to movably engage with the linear guide system and translate along the second axis relative to the linear guide system. The carriage and hoist arm are movable such that a hoist feature engagement interface of the hoist arm can be moved engage with hoisting features of any of the removable top covers.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: November 8, 2022
    Assignee: Lam Research Corporation
    Inventors: Paul Albert Avanzino, Jerrel K. Antolik, Daniel Arthur Brown, Jason Lee Treadwell
  • Patent number: 11495441
    Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: November 8, 2022
    Assignee: Lam Research Corporation
    Inventors: Jon McChesney, Saravanapriyan Sriraman, Richard A. Marsh, Alexander Miller Paterson, John Holland
  • Patent number: 11488831
    Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: November 1, 2022
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ji Zhu, Mark Kawaguchi, Nathan Musselwhite
  • Patent number: 11488810
    Abstract: A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.
    Type: Grant
    Filed: December 10, 2021
    Date of Patent: November 1, 2022
    Assignee: Lam Research Corporation
    Inventors: Andrew Borth, Christopher Ramsayer
  • Publication number: 20220342301
    Abstract: Various embodiments herein relate to techniques for depositing photoresist material on a substrate. For example, the tin techniques may involve providing the substrate in a reaction chamber; providing a first and second reactant to the reaction chamber, where the first reactant is an organo-metallic precursor having a formula of M1aR1bL1c, where: M1 is a metal having a high patterning radiation-absorption cross-section, R1 is an organic group that survives the reaction between the first reactant and the second reactant and is cleavable from M1 under exposure to patterning radiation, L1 is a ligand, ion, or other moiety that reacts with the second reactant, a?1, b?1, and c?1, and where at least one of the following conditions is satisfied: the photoresist material comprises two or more high-patterning radiation absorbing elements, and/or the photoresist material comprises a composition gradient along a thickness of the photoresist material.
    Type: Application
    Filed: June 24, 2020
    Publication date: October 27, 2022
    Applicant: Lam Research Corporation
    Inventors: Timothy William Weidman, Kevin Li Gu, Katie Lynn Nardi, Chenghao Wu, Boris Volosskiy, Eric Calvin Hansen
  • Patent number: 11482436
    Abstract: A rotational indexer that is rotatable to allow semiconductor wafers or other items to be moved between various stations arranged in a circular array; the items being moved may be supported by arms of the indexer during such movement. The rotational indexer may be further configured to also cause the items being moved to rotate about other rotational axes to cause rotation of the items relative to the arms supporting them.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: October 25, 2022
    Assignee: Lam Research Corporation
    Inventors: Richard M. Blank, Karl Frederick Leeser
  • Patent number: 11479856
    Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: October 25, 2022
    Assignee: Lam Research Corporation
    Inventors: Purushottam Kumar, Adrien LaVoie, Hu Kang, Jun Qian, Tuan Nguyen, Ye Wang
  • Publication number: 20220334554
    Abstract: A large beam spot spectral reflectometer system for measuring a substrate is provided. Hardware components for collecting in situ large beam spot optical signals is disclosed. Machine learning models for denoising large beam spot optical signals are disclosed. Machine learning models for interpreting in situ optical data and facilitating process control are also disclosed.
    Type: Application
    Filed: April 15, 2022
    Publication date: October 20, 2022
    Applicant: Lam Research Corporation
    Inventors: Ye Feng, Seonkyung Lee, Rajan Arora, Jorge Luque
  • Publication number: 20220328236
    Abstract: A transformer includes a primary coil and a secondary coil. The primary coil includes: a first shield of a first coaxial cable; a second shield of a second coaxial cable; and a conductive interconnector connecting the first shield to the second shield. The secondary coil includes: a first core of the first coaxial cable; a second core of the second coaxial cable; and a pair of conductive lines connecting the first core to the second core.
    Type: Application
    Filed: September 28, 2020
    Publication date: October 13, 2022
    Applicant: Lam Research Corporation
    Inventor: Sunil Kapoor
  • Publication number: 20220328317
    Abstract: Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.
    Type: Application
    Filed: September 1, 2020
    Publication date: October 13, 2022
    Applicant: Lam Research Corporation
    Inventors: Jeong-Seok NA, Yao-Tsung HSIEH, Chiukin Steven LAI, Patrick A. VAN CLEEMPUT
  • Patent number: 11469084
    Abstract: A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: October 11, 2022
    Assignee: Lam Research Corporation
    Inventors: Timothy S. Thomas, Vince Burkhart, Joel Hollingsworth, David French, Damien Slevin
  • Patent number: 11469079
    Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: October 11, 2022
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Kwame Eason, Dengliang Yang, Pilyeon Park, Faisal Yaqoob, Joon Hong Park, Mark Kawaguchi, Ivelin Angelov, Ji Zhu, Hsiao-Wei Chang
  • Patent number: 11462390
    Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: October 4, 2022
    Assignee: Lam Research Corporation
    Inventors: Juline Shoeb, Alex Paterson, Ying Wu
  • Publication number: 20220299877
    Abstract: The present disclosure relates to post-application treatment of a radiation-sensitive film to provide a hardened resist film. In some instances, such films can be used to form a pattern by a positive tone wet development process.
    Type: Application
    Filed: October 8, 2020
    Publication date: September 22, 2022
    Applicant: Lam Research Corporation
    Inventors: Timothy William Weidman, Katie Lynn Nardi, Dries Dictus, Benjamin Kam, Chenghao Wu, Eric Calvin Hansen, Nizan Kenane, Kevin Li Gu
  • Patent number: 11450631
    Abstract: In one example, a method for redistribution layer (RDL) process is described. A substrate is provided. A dielectric layer is deposited on top of the substrate. The dielectric layer is patterned. A barrier and copper seed layer are deposited on top of the dielectric layer. A photoresist layer is applied on top of the barrier and copper seed layer. The photoresist layer is patterned to correspond with the dielectric layer pattern. Copper is electrodepositing in the patterned regions exposed by the photoresist layer. The photoresist layer is removed. The copper and seed barrier are etched.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: September 20, 2022
    Assignee: Lam Research Corporation
    Inventors: Justin Oberst, Bryan L. Buckalew, Stephen J. Banik
  • Patent number: 11450532
    Abstract: A method for selectively etching a first region of a structure with respect to a second region of the structure is provided. The method comprises at least one cycle. Each cycle comprises selectively depositing an inhibitor layer on the first region of the structure, providing an atomic layer deposition over the structure, wherein the atomic layer deposition selectively deposits a mask on the second region of the structure with respect to the inhibitor layer, and selectively etching the first region of the structure with respect to the mask. The selectively depositing an inhibitor layer on the first region of the structure comprises providing an inhibitor layer gas and forming the inhibitor layer gas into inhibitor layer radicals, wherein the inhibitor layer radicals selectively deposit on the first region of the structure with respect to the second region of the structure.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: September 20, 2022
    Assignee: Lam Research Corporation
    Inventors: Younghee Lee, Daniel Peter, Samantha SiamHwa Tan, Yang Pan
  • Patent number: 11450513
    Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: September 20, 2022
    Assignee: Lam Research Corporation
    Inventors: Wenbing Yang, Tamal Mukherjee, Mohand Brouri, Samantha Tan, Yang Pan, Keren Jacobs Kanarik