Abstract: A method for calibrating a gas flow metrology system for a substrate processing system includes a) measuring temperature using a first temperature sensor and a reference temperature sensor over a predetermined temperature range and determining a first transfer function; b) measuring pressure using a first pressure sensor and a reference pressure sensor over a predetermined pressure range using a first calibration gas and determining a second transfer function; c) performing a first plurality of flow rate measurements in a predetermined flow rate range with a first metrology system and a reference metrology system, wherein the first metrology system and the reference metrology system use a first orifice size and the first calibration gas; and d) scaling temperature and pressure using the first transfer function and the second transfer function, respectively, and determining a corresponding transfer function for the first calibration gas based on the first plurality of flow rate measurements.

Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

Abstract: An assembly used in a process chamber for depositing a film on a wafer. A pedestal assembly includes a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal assembly. A raising mechanism separates the lift pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft extending from the lift pad, and a lever rotatably attached to the lift pad bracket. The lever rests on the roller when not engaged with the upper hard stop. When the pedestal assembly moves upwards, the lever rotates about a pin when engaging the upper hard stop and roller, and separates the lift pad from the pedestal by a process rotation displacement.

Abstract: Various embodiments herein relate to systems, methods, and media for matching pre-processing and post-processing substrate samples.

Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

Abstract: An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: Systems and methods for cleaning an edge ring pocket are described herein. One of the methods includes providing one or more process gases to a plasma chamber, supplying a low frequency (LF) radio frequency (RF) power to an edge ring that is located adjacent to a chuck of the plasma chamber. The LF RF power is supplied while the one or more process gases are supplied to the plasma chamber to maintain plasma within the plasma chamber. The supply of the LF RF power increases energy of plasma ions near the edge ring pocket to remove residue in the edge ring pocket. The LF RF power is supplied during the time period in which a substrate is not being processed within the plasma chamber.

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

Abstract: Systems and methods for tuning a megahertz radio frequency (RF) generator within a cycle of operation of a kilohertz (kHz) RF generator are described. In one of the methods, a predetermined periodic waveform is provided to a processor. The processor uses a computer-based model to determine plurality of frequency parameters for the predetermined periodic waveform. The frequency parameters are applied to the megahertz RF generator to generate an RF signal having the frequency parameters during one or more cycles of operation of the kilohertz RF generator.

Abstract: Imaging layers on the surface of a substrate may be patterned using next generation lithographic techniques, and the resulting patterned film may be used as a lithographic mask, for example, for production of a semiconductor device.

Abstract: A sealing interface includes a first tube having an end with a convex surface and a second tube having an end with a convex surface. A spacer is disposed between the respective ends of the first and second tubes. One side of the spacer has a concave surface that substantially matches the convex surface of the end of the first tube, and another side of the spacer has a concave surface that substantially matches the convex surface of the end of the second tube. The spacer includes a through hole in fluid communication with a fluid passageway of the first tube and a fluid passageway of the second tube. Tying elements are respectively coupled to the first tube and the second tube, with the tying elements applying a compressive force between the first tube and the spacer, and applying a compressive force between the second tube and the spacer.

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.

Abstract: A metrology system may include an optical metrology tool configured to produce an optical metrology output for one or more features on a processed substrate, and a metrology machine learning model that has been trained using a training set of (i) profiles, critical dimensions, and/or contours for a plurality of features, and (ii) optical metrology outputs for the plurality of features. The metrology machine learning model may be configured to: receive the optical metrology output from the optical metrology tool; and output the profile, critical dimension, and/or contour of the one or more features on the processed substrate.

Abstract: A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a capping layer on the HfO2 layer, annealing the HfO2 layer and the capping layer to form ferroelectric hafnium HfO2, and selectively etching the capping layer to remove the capping layer without removing the HfO2 layer.

Abstract: A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a hafnium nitride (HfN) layer on the HfO2 layer; and annealing the HfO2 layer and the HfN layer to form ferroelectric hafnium HfO2.

Abstract: A plasma processing system is provided. The system includes a hydrogen gas supply and a hydrocarbon gas supply and a processing chamber. The system includes a first mass flow controller (MFC) for controlling hydrogen gas flow into the processing chamber and a second MFC for controlling hydrocarbon gas flow into the processing chamber. The system includes a plasma source for generating plasma at the processing chamber. The plasma is for etching SnO2. The system includes a controller for regulating the first MFC and the second MFC such that a ratio of hydrocarbon gas flow to the hydrogen gas flow into the processing chamber is between 1% and 60% so that when SnH4 is produced during said etching SnO2. The SnH4 is configured to react with hydrocarbon gas to produce an organotin compound that is volatilizable in a reaction that is more kinetically favorable than SnH4 decomposition into Sn powder.

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

Abstract: A method for processing a substrate is provided, wherein the substrate is located below a showerhead in a processing chamber. A deposition layer is deposited on the substrate, wherein at least one deposition gas is provided through the showerhead. A secondary purge gas is flowed during the depositing the deposition layer from a location outside of the showerhead in the processing chamber forming a flow curtain around an outer edge of the showerhead, wherein the secondary purge gas comprises at least one component gas. A partial pressure of the at least one component gas is changed over time during the depositing the deposition layer, wherein the depositing the deposition layer has a non-uniformity, wherein the changing the partial pressure changes the non-uniformity over time during the depositing the deposition layer.