Patents Assigned to Lam Research Corporation
  • Patent number: 11028482
    Abstract: A method for controlling temperature of a substrate support includes receiving first and second currents corresponding to first and second heater elements, respectively, of a substrate support, receiving first and second voltages corresponding to the first and second heater elements, respectively, calculating a first resistance of the first heater element based on the first voltage and the first current, calculating a second resistance of the second heater element based on the second voltage and the second current, calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures, calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data, and selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: June 8, 2021
    Assignee: Lam Research Corporation
    Inventors: Aaron Durbin, Ramesh Chandrasekharan, Dirk Rudolph, Thomas G. Jewell
  • Patent number: 11031244
    Abstract: A method for improving EUV lithographic patterning of SnO2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO2 layer. The modification increases the hydrophobicity of the SnO2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO2 layer via spin coating. The modification of the surface of the SnO2 layer enhances adhesion of contact between the photoresist and the SnO2 layer during and after spin coating.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: June 8, 2021
    Assignee: Lam Research Corporation
    Inventors: Akhil Singhal, Nader Shamma, Dustin Zachary Austin
  • Patent number: 11031215
    Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: June 8, 2021
    Assignee: Lam Research Corporation
    Inventors: John Stephen Drewery, Tom A. Kamp, Haoquan Yan, John Edward Daugherty, Ali Sucipto Tan, Ming-Kuei Tseng, Bruce Edmund Freeman
  • Patent number: 11029668
    Abstract: A system includes sensors, an interface and a controller. The interface receives feedback signals from the sensors. At least some of the sensors are disposed in an electrostatic chuck. The feedback signals are indicative respectively of fields of a heating plate of the electrostatic chuck. The controller, based on the fields and sets of calibration values, estimates values of a first field respectively for multiple points on a substrate. Each of the sets of calibration values corresponds respectively to one of multiple actuators. The calibration values, in each of the sets of calibration values, define amounts of contribution provided by a respective one of the actuators to the first field for the points. The controller changes physical states of the actuators based on the estimated values of the first field of the points to provide a predetermined temperature distribution profile across the electrostatic chuck.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: June 8, 2021
    Assignee: Lam Research Corporation
    Inventors: Marcus Musselman, Andrew D. Bailey, III
  • Patent number: 11024531
    Abstract: A mechanical indexer for a substrate processing tool includes first and second arms each having first and second end effectors. The first arm is configured to rotate on a first spindle to selectively position the first end effector of the first arm at a plurality of processing stations of the substrate processing tool and selectively position the second end effector of the first arm at the plurality of processing stations of the substrate processing tool. The second arm is configured to rotate on a second spindle to selectively position the first end effector of the second arm at the plurality of processing stations of the substrate processing tool and selectively position the second end effector of the second arm at the plurality of processing stations of the substrate processing tool. The first arm is configured to rotate independently of the second arm.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: June 1, 2021
    Assignee: Lam Research Corporation
    Inventors: Michael Nordin, Karl Leeser, Richard Blank, Robert Sculac
  • Patent number: 11024532
    Abstract: A wafer support structure for use in a chamber used for semiconductor fabrication of wafers is provided. The wafer support structure includes a dielectric block. A first electrode is embedded in a top half of the dielectric block. The first electrode is configured for connection to a direct current (DC) power source. A second electrode is embedded in a bottom half of the dielectric block. A vertical connection is embedded in the dielectric block for electrically coupling the second electrode to the first electrode.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: June 1, 2021
    Assignee: Lam Research Corporation
    Inventors: Alexander Matyushkin, Alexei Marakhtanov, John Patrick Holland, Keith Gaff, Felix Kozakevich
  • Patent number: 11021792
    Abstract: A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: June 1, 2021
    Assignee: Lam Research Corporation
    Inventors: Eli Jeon, Adrien LaVoie, Purushottam Kumar, Jeffrey Kersten, Gautam Dhar
  • Publication number: 20210157228
    Abstract: Computer implemented methods and computer program products have instructions for generating transfer functions that relate segments on lithography photomasks to features produced by photolithography and etching using such segments. Such methods may be characterized by the following elements: (a) receiving after development inspection metrology results produced from one or more first test substrates on which resist was applied and patterned using a set of design layout segments; (b) receiving after etch inspection metrology results produced from one or more second test substrates which were etched after resist was applied and patterned using said set of design layout segments; and (c) generating the transfer function using the set of design layout segments together with corresponding after development inspection metrology results and corresponding after etch inspection metrology results.
    Type: Application
    Filed: April 8, 2019
    Publication date: May 27, 2021
    Applicant: Lam Research Corporation
    Inventors: Saravanapriyan Sriraman, David M. Fried
  • Patent number: 11015247
    Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: May 25, 2021
    Assignee: Lam Research Corporation
    Inventors: Rachel Batzer, Zhe Gui, Galbokka Hewage Layan Savithra
  • Patent number: 11011355
    Abstract: A system for controlling a temperature of a substrate during treatment in a substrate processing system includes a substrate support defining a center zone and a radially-outer zone. The substrate is arranged over both the center zone and the radially-outer zone during treatment. A first heater is configured to heat the center zone. A second heater is configured to heat the radially-outer zone. A first heat sink has one end in thermal communication with the center zone. A second heat sink has one end in thermal communication with the radially-outer zone. A temperature difference between the center zone and the radially-outer zone is greater than 10° C. during the treatment.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: May 18, 2021
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Norman Mertke, Himanshu Chokshi
  • Patent number: 11011379
    Abstract: Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: May 18, 2021
    Assignee: Lam Research Corporation
    Inventors: Reza Arghavani, Samantha Tan, Bhadri N. Varadarajan, Adrien LaVoie, Ananda K. Banerji, Jun Qian, Shankar Swaminathan
  • Patent number: 11011351
    Abstract: Systems and methods for generating monoenergetic ions are described. A duty cycle of a high parameter level of a multistate parameter signal is maintained and a difference between the high parameter level and a low parameter level of the multistate parameter signal is maintained to generate monoenergetic ions. The monoenergetic ions are used to etch a top material layer of a substrate at a rate that is self-limiting without substantially etching a bottom material layer of the substrate.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: May 18, 2021
    Assignee: Lam Research Corporation
    Inventors: Juline Shoeb, Alexander Miller Paterson, Ying Wu
  • Patent number: 11011388
    Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: May 18, 2021
    Assignee: Lam Research Corporation
    Inventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
  • Patent number: 11008655
    Abstract: A pedestal for a plasma processing system includes a substrate supporting surface. An annular edge ring is arranged around a periphery of the substrate supporting surface. A chemical vapor deposition (CVD) diamond coating is arranged on a plasma-exposed surface of the annular edge ring. The CVD diamond coating includes sp3 bonds. A purity of the sp3 bonds in the diamond coating is greater than 90%.
    Type: Grant
    Filed: February 9, 2017
    Date of Patent: May 18, 2021
    Assignee: Lam Research Corporation
    Inventor: Justin Charles Canniff
  • Patent number: 11011353
    Abstract: A substrate support in a substrate processing system includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller. The controller at least one of raises the edge ring to selectively cause the edge ring to engage the substrate and lowers the inner portion to selectively cause the edge ring to engage the substrate. The controller determines when the edge ring engages the substrate and calculates at least one characteristic of the substrate processing system based on the determination of when the edge ring engages the substrate.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: May 18, 2021
    Assignee: Lam Research Corporation
    Inventors: Marcus Musselman, Andrew D. Bailey, III, Jon McChesney
  • Patent number: 11004662
    Abstract: A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: May 11, 2021
    Assignee: Lam Research Corporation
    Inventors: Taide Tan, Huatan Qiu, Ryan Senff
  • Patent number: 11001934
    Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: May 11, 2021
    Assignee: Lam Research Corporation
    Inventors: Stephen J. Banik, II, Bryan L. Buckalew, Aaron Berke, James Isaac Fortner, Justin Oberst, Steven T. Mayer, Robert Rash
  • Publication number: 20210130976
    Abstract: Methods and electroplating systems for controlling plating electrolyte concentration on an electrochemical plating apparatus for substrates are disclosed. A method involves: (a) providing an electroplating solution to an electroplating system; (b) electroplating the metal onto the substrate while the substrate is held in a cathode chamber of an electroplating cell of electroplating system; (c) supplying the make-up solution to the electroplating system via a make-up solution inlet; and (d) supplying the secondary electroplating solution to the electroplating system via a secondary electroplating solution inlet. The secondary electroplating solution includes some or all components of the electroplating solution. At least one component of the secondary electroplating solution has a concentration that significantly deviates from its target concentration.
    Type: Application
    Filed: January 11, 2021
    Publication date: May 6, 2021
    Applicant: Lam Research Corporation
    Inventors: Zhian He, Shantinath Ghongadi, Quan Ma, Hyungjun Hur, Cian Sweeney, Quang Nguyen, Rezaul Karim, Jingbin Feng
  • Patent number: 10998187
    Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: May 4, 2021
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Kapu Sirish Reddy, Meliha Gozde Rainville, Nagraj Shankar, Dennis M. Hausmann, David Charles Smith, Karthik Sivaramakrishnan, David W. Porter
  • Patent number: 10998167
    Abstract: Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: May 4, 2021
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill