Patents Assigned to Lam Research Corporation
  • Publication number: 20190153601
    Abstract: A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.
    Type: Application
    Filed: January 25, 2019
    Publication date: May 23, 2019
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Bin Luo, Timothy Scott Thomas, Damien Slevin, David Kamp
  • Patent number: 10297459
    Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in substantial preservation of a mask layer on the substrate. The protective coating may be deposited using particular reactants and/or reaction conditions that are unlikely to damage the mask layer. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: May 21, 2019
    Assignee: Lam Research Corporation
    Inventors: Eric A. Hudson, Nikhil Dole
  • Patent number: 10297422
    Abstract: A control system is provided and includes a memory and a conversion module. The memory is configured to store position data of first positions of a first variable capacitor of a first match network of a first plasma processing system. Each of the first positions of the first variable capacitor corresponds to a respective one of multiple loads experienced by the first match network. The conversion module is configured to: obtain the position data stored in the memory; determine reference capacitor positions based on the position data; determine a calibrated conversion model based on the reference capacitor positions, where the calibrated conversion model converts second positions of the first variable capacitor to comparable capacitor positions, and where the second positions are positions of the first variable capacitor existing subsequent to the determination of the calibrated conversion model; and store the calibrated conversion model.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: May 21, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventor: Arthur H. Sato
  • Patent number: 10296676
    Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion are described. By tuning the impedance matching network in a step-wise fashion instead of directly to achieve optimum values of a radio frequency (RF) and a combined variable capacitance, processing of a wafer using the tuned optimal values becomes feasible.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: May 21, 2019
    Assignee: Lam Research Corporation
    Inventors: Arthur M. Howald, John C. Valcore, Jr., Andrew Fong, David Hopkins
  • Patent number: 10297480
    Abstract: A buffer for use in semiconductor processing tools is disclosed. The buffer may be used to temporarily store wafers after processing operations are performed on those wafers. The buffer may include two side walls and a back wall interposed between the side walls. The side walls and the back wall may generally define an area within which the wafers may be stored in a stacked arrangement. Wafer support fins extending from the side walls and the back wall may extend into a wafer support region that overlaps with the edges of the wafers. Purge gas may be introduced in between each pair of wafers via purge gas ports located in one of the walls.
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: May 21, 2019
    Assignee: Lam Research Corporation
    Inventors: Martin Robert Maraschin, Richard Howard Gould, Derek John Witkowicki
  • Patent number: 10294560
    Abstract: A throttle valve includes a throttle body including a housing having an inner surface. The throttle body includes first and second stop surfaces arranged on the inner surface. A throttle plate is rotatable inside the housing of the throttle body about a shaft between closed and open positions. A first projection is located on a first surface of the throttle plate adjacent to a radially outer end of the throttle plate. A second projection is located on a second surface of the throttle plate adjacent to a radially outer end of the throttle plate. The second surface is opposite the first surface. The first and second projections extend outwardly from the throttle plate in opposite directions and in corresponding directions of rotational movement of the throttle plate during closing to bias against the second stop surface when the throttle valve is closed.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: May 21, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Dirk Rudolph, Antonio Xavier
  • Patent number: 10297442
    Abstract: Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber. Radicals of source gas in a substantially low energy state, such as radicals of hydrogen in the ground state, are provided from a remote plasma source into reaction chamber. In addition, co-reactant gas is flowed towards the reaction chamber. In some implementations, radicals of the co-reactant gas are provided from the remote plasma source into the reaction chamber. A flow rate of the co-reactant gas can be changed over time, incrementally or gradually, to form a multi-layered silicon carbide film or a graded silicon carbide film having a composition gradient from a first surface to a second surface of the graded silicon carbide film.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: May 21, 2019
    Assignee: Lam Research Corporation
    Inventors: Bhadri N. Varadarajan, Bo Gong, Guangbi Yuan, Zhe Gui, Fengyuan Lai
  • Publication number: 20190148118
    Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.
    Type: Application
    Filed: November 15, 2017
    Publication date: May 16, 2019
    Applicant: Lam Research Corporation
    Inventors: Yiting ZHANG, Richard MARSH, Saravanapriyan SRIRAMAN, Alexander PATERSON
  • Patent number: 10287683
    Abstract: A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: May 14, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Chunguang Xia, Ramesh Chandrasekharan, Douglas Keil, Edward J. Augustyniak, Karl Frederick Leeser
  • Patent number: 10283404
    Abstract: Provided are methods of forming diffusion barriers and adhesion layers for interconnects such as cobalt (Co) interconnects or ruthenium (Ru) interconnects. The methods involve selective deposition of tungsten carbon nitride (WCN) films on the oxide surfaces of a feature including a Co surface. The selective growth of WCN on oxide allows the contact resistance at an interface such as a Co—Co interface or a Co—Ru interface to be significantly reduced while maintaining good film coverage, adhesion, and/or barrier properties on the sidewall oxide surfaces.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: May 7, 2019
    Assignee: Lam Research Corporation
    Inventors: Jeong-Seok Na, Megha Rathod, Chiukin Steven Lai, Raashina Humayun
  • Patent number: 10283325
    Abstract: A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: May 7, 2019
    Assignee: Lam Research Corporation
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Patent number: 10283330
    Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: May 7, 2019
    Assignee: Lam Research Corporation
    Inventors: Alexei Marakhtanov, Felix Kozakevich, Michael C. Kellogg, John Patrick Holland, Zhigang Chen, Kenneth Lucchesi, Lin Zhao
  • Patent number: 10276348
    Abstract: A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: April 30, 2019
    Assignee: Lam Research Corporation
    Inventors: Alexei Marakhtanov, Eric A Hudson, Rajinder Dhindsa, Neil Benjamin
  • Patent number: 10276350
    Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion for each state transition are described. By tuning the impedance matching network in a step-wise fashion for each state transition instead of directly achieving an optimal value of a combined variable capacitance for each state, processing of a wafer using the tuned optimal values becomes feasible.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: April 30, 2019
    Assignee: Lam Research Corporation
    Inventors: Arthur M. Howald, John C. Valcore, Jr., Andrew Fong, David Hopkins
  • Patent number: 10276398
    Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: April 30, 2019
    Assignee: Lam Research Corporation
    Inventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
  • Patent number: 10269566
    Abstract: Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma at a first bias power to modify a surface of the substrate and exposing the modified surface to an inert plasma at a second bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate. ALE and selective deposition may be performed without breaking vacuum.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: April 23, 2019
    Assignee: Lam Research Corporation
    Inventors: Samantha Tan, Jengyi Yu, Richard Wise, Nader Shamma, Yang Pan
  • Patent number: 10269545
    Abstract: Methods for operating a plasma processing chamber are provided. One example method includes processing a substrate in the plasma processing chamber under vacuum. The processing of said substrate produces particulate residues that adhere to surfaces within an internal region of the plasma processing chamber. The method includes characterizing performance of the processing of the substrate and inspecting an internal region of the plasma processing chamber after processing said substrate without breaking said vacuum. The inspecting is configured to identify characteristics of said particulate residues on one or more surfaces of the internal region of the plasma processing chamber. The inspecting includes capturing optical data of said one or more surfaces. The method further includes generating a tool model to correlate the characterized performance of the processing of the substrate to the characterized particulate residues.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: April 23, 2019
    Assignee: Lam Research Corporation
    Inventor: Richard Alan Gottscho
  • Patent number: 10269559
    Abstract: Methods and apparatuses for depositing material into high aspect ratio features, features in a multi-laminate stack, features having positively sloped sidewalls, features having negatively sloped sidewalls, features having a re-entrant profile, and/or features having sidewall topography are described herein. Methods involve depositing a first amount of material, such as a dielectric (e.g., silicon oxide), into a feature and forming a sacrificial helmet on the field surface of the substrate, etching some of the first amount of the material to open the feature opening and/or smoothen sidewalls of the feature, and depositing a second amount of material to fill the feature. The sacrificial helmet may be the same as or different material from the first amount of material deposited into the feature.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: April 23, 2019
    Assignee: Lam Research Corporation
    Inventors: Joseph Abel, Pulkit Agarwal, Richard Phillips, Purushottam Kumar, Adrien LaVoie
  • Patent number: 10266947
    Abstract: A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. A showerhead assembly includes a stem, face plate and back plate wherein the stem is rotary friction welded to the back plate. A substrate pedestal assembly is configured to support a substrate on an upper surface thereof when a substrate is processed in the deposition apparatus.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: April 23, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Eric Madsen, Kurt Kern
  • Patent number: 10267728
    Abstract: A measurement system to measure a concentration of neutral gas species above a substrate includes a substrate support located in a chamber to support a substrate. A plasma source generates plasma in the chamber above the substrate. The plasma generates metastable species having higher ionization energy than a neutral gas species. The metastable species excite the neutral gas species located above the substrate. An optical emission spectrometer (OES) sensor measures spectra from a location above the substrate while the plasma is generated by the plasma source. A controller is configured to determine a concentration of the neutral gas species in a region above the substrate based on the measured spectra and to selectively process the substrate based on the concentration.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: April 23, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Dengliang Yang, Ilia Kalinovski, Haoquan Fang, David Cheung