Abstract: In one embodiment, the disclosed apparatus is an in-situ, closed-loop bubble and foam detection and reduction system that includes a liquid-level sensor to determine a volume of a liquid in a fluid reservoir, a mass-detection device to determine a mass of the fluid reservoir and any liquid contained within the fluid reservoir, a processor electrically coupled to the liquid-level sensor and the mass-detection device to determine an actual volume of the liquid within the fluid reservoir, and a showerhead coupled to the processor and positioned above the fluid reservoir. The showerhead is activated by the processor when a volume of the liquid determined by the liquid-level sensor exceeds the actual volume of the liquid by a predetermined amount. Other apparatuses and methods are disclosed.

Abstract: A method for evacuating a volume below a substrate in a substrate processing system includes arranging the substrate on a lift mechanism of a substrate support to define the volume below the substrate between the substrate and an upper surface of the substrate support. An evacuation step is initiated to evacuate the volume below the substrate. The evacuation step includes pumping down the volume below the substrate at least one of through and around the lift mechanism. The lift mechanism is lowered during the evacuation step to position the substrate on the upper surface of the substrate support and the evacuation step is terminated.

Abstract: A robot system for servicing a semiconductor tool includes a cart frame. An arm support frame is fixed to the cart frame and is coupled to a robot arm. An arm frame is connected by hinges to the arm support frame at a first end and to a fixture connect interface at a second end. The fixture connect interface connects to a docking fixture of the semiconductor tool. An arm locking mechanism is attached to the arm support frame for locking the arm frame, when rotated, to an extended position or a folded position. The fixture connect interface connects the cart frame to the semiconductor tool, when the arm frame is locked in the extended position.

Abstract: A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal plane, and a plurality of channels to carry a fluid. The plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate.

Abstract: A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A gas delivery apparatus having a heating block assembly, a heating element, a gas line, and a temperature-sensing switch. The heating block assembly includes a pair of heating blocks. Individual ones of the pair of heating blocks comprise a planar surface. The planar surface comprises first and second grooves that are substantially parallel. The first and second grooves extend along a length of the heating block. The planar surfaces of the individual ones of the pair of heating blocks are in mechanical contact with each other. The heating element is within the first groove. The first groove and the heating element extend along a length of the heating block assembly. A gas line is within the second groove. The second groove is adjacent to the first groove within the heating block assembly. The temperature-sensing switch is mechanically coupled to the heating block assembly and electrically coupled to the heating element.

Abstract: Various embodiments include heat and volatile-organic-compounds detecting systems. In one example, the heat-detecting system includes at least one heat sensor mounted externally to a device, such as a local power-box (LPB). The heat sensor has an area-of-detection to detect heat emitted from at least one face of the LPB at one or more locations. The heat-detecting system also includes a high-absorptance infrared-collector (HAIC) formed within the LPB to collect excessive heat generated by a component within the LPB. The excessive heat is correlated to a pre-determined temperature level, and a temperature of the collected excessive heat is measured by the heat sensor. Each of the heat sensor and the HAIC are coupled to a control module. Other apparatuses, designs, and methods are disclosed.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

Abstract: Various embodiments herein relate to a Mixed Reality (MR) control platform to operate a semiconductor manufacturing tool in an MR environment and to display data associated with the semiconductor manufacturing tool. In son embodiments, the MR control platform comprises an MR control system and an MR headset. The MR control system can obtain sensor data representative of sensor output from a semiconductor manufacturing tool. The MR control system can determine operational information associated with the semiconductor manufacturing tool and based on the sensor data. The MR control system can cause the operational information to be transmitted to the MR headset. The MR headset can receive the operational information associated with the semiconductor manufacturing tool from the MR control system. The MR headset can cause content associated with the operational information and one or more control features to be rendered in an MR environment.

Abstract: Method for tuning a voltage setpoint for a multi-state pulsed RF signal in a plasma processing system, including: applying RF power from a first generator to an ESC, the RF power from the first generator defining a first multi-state pulsed RF signal; applying RF power from a second generator to an edge electrode that surrounds the ESC and is disposed below an edge ring that surrounds the ESC, the RF power from the second generator defining a second multi-state pulsed RF signal having a first state and a second state, wherein for each state of the second multi-state pulsed RF signal, the second generator automatically introduces a phase adjustment to substantially match phase with a corresponding state of the first multi-state pulsed RF signal; adjusting a voltage setpoint for the second state of the second multi-state pulsed RF signal to tune the phase adjustment to a target phase adjustment setting.

Abstract: An electrochemical deposition system includes: an electrochemical deposition chamber including an electrolyte for electrochemical deposition; a substrate holder configured to hold a substrate and including a first cathode that is electrically connected to the substrate; a first actuator configured to adjust a vertical position of the substrate holder within the electrochemical deposition chamber; an anode submerged in the electrolyte; a second cathode arranged between the first cathode and the anode; a first optical probe configured to measure a first reflectivity of the substrate at a first distance from a center of the substrate while the substrate is submerged within the electrolyte during the electrochemical deposition; and a controller configured to, based on the first reflectivity, selectively adjust at least one of power applied to the first cathode, power applied to the second cathode, power applied to the anode, and the vertical position of the substrate holder.

Abstract: A middle ring configured to be arranged on a bottom ring and to support a moveable edge ring and further configured to be raised and lowered relative to a substrate support includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, a guide feature in the upper surface defining the annular outer diameter, an inner annular rim in the upper surface defining the annular inner diameter, and a groove defined in the upper surface between the guide feature and the inner annular rim.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: Early warning systems and methods for determining capacitor failures are described. One of the methods includes controlling a motor to further control a variable capacitor that is coupled to the motor to facilitate achieving a hard stop position or a home position of the variable capacitor for multiple times. Each time the motor is controlled to facilitate achieving the home position or the hard stop position, a number of steps that are taken by the motor are recorded. The numbers of steps are compared with each other to determine whether the variable capacitor has failed.

Abstract: Methods of mitigating line bending during feature fill include deposition of an amorphous layer and/or an inhibition treatment during fill.

Abstract: A valve manifold for use in a semiconductor processing tool comprises a manifold body, a purge gas inlet, a process gas inlet, a manifold outlet, a divert outlet, a first valve interface, a second valve interface, and a third valve interface. The first valve interface and the third valve interface each includes a first port, and a second port. The second valve interface includes a first port, a second port, a third port, and a fourth port.

Abstract: A robot calibration system includes a calibration fixture configured to be mounted on a substrate processing chamber. The calibration fixture includes at least one camera arranged to capture an image including an outer edge of a test substrate and an edge ring surrounding the test substrate. A controller is configured to receive the captured image, analyze the captured image to measure a distance between the outer edge of the test substrate and the edge ring, calculate a center of the test substrate based on the measured distance, and calibrate a robot configured to transfer substrate to and from the substrate processing chamber based on the calculated center of the test substrate.

Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.