Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

Abstract: An in situ protective coating is deposited on surfaces of chamber components of a reaction chamber at high temperatures. The in situ protective coating may be deposited at a temperature greater than about 200° C. to provide a high quality coating that is resistant to certain types of halogen chemistries, such as fluorine-based species, chlorine-based species, bromine-based species, or iodine-based species. Subsequent coatings or layers may be deposited on the in situ protective coating having different etch selectivities than the underlying in situ protective coating. The in situ protective coating may be deposited throughout the reaction chamber to deposit on surfaces of the chamber components, including on chamber walls.

Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

Abstract: Disclosed are apparatuses and methods for flowing a reactant process gas into a processing chamber containing a substrate, generating a plasma at a first power level in the processing chamber during the flowing of the reactant process gas, thereby depositing a layer of a material on the substrate by plasma-enhanced chemical vapor deposition, maintaining the plasma while ceasing flowing the reactant process gas into the processing chamber, thereby stopping the depositing, without extinguishing the plasma, adjusting the plasma to a second power level, flowing an inert process gas into the processing chamber, thereby modifying the layer of the material while the plasma is at the second power level, and extinguishing the plasma after the modifying.

Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.

Abstract: A substrate support includes: a first plate configured to support a substrate; and a second plate that is connected to the first plate. The second plate includes at least one of: an internal coolant channel configured to receive coolant; and an internal gas channel configured to receive gas. The at least one of the internal coolant channel and the internal gas channel includes one of: chamfered internal corners; and staired internal corners.

Abstract: A tubing assembly includes a plurality of tubing structures connected to each other in a configuration providing one or more fluid pathways through the plurality of tubing structures from a fluid entrance to a fluid exit of the plurality of tubing structures. An electrical resistance heating filament wire is wound around the plurality of tubing structures in an unbroken manner from the fluid entrance to the fluid exit. The electrical resistance heating filament wire has a first electrical lead located proximate to the fluid entrance of the plurality of tubing structures and a second electrical lead located proximate to the fluid exit of the plurality of tubing structures. An encapsulation layer of thermal insulating material is disposed over an entirety of the plurality of tubing structures and covers the electrical resistance heating filament wire wound around the plurality of tubing structures with the first and second electrical leads exposed.

Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.

Abstract: A method for providing a part with a plasma resistant ceramic coating for use in a plasma processing chamber is provided. A patterned mask is placed on the part. A film is deposited over the part. The patterned mask is removed. A plasma resistant ceramic coating is applied on the part.

Abstract: A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.

Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.

Abstract: A process module including a chamber body having a lower chamber and an upper chamber is provided. The lower chamber is configured to mate with the upper chamber along a diagonal interface. An electrode assembly having a substrate support is provided. The electrode assembly is coupled to the upper chamber. A hinge connect couples a first side of the lower chamber to a first side of the upper chamber. The upper chamber is configured to split and open along the diagonal interface and rotate about the hinge connect. The electrode assembly is configured to rotate with the upper chamber in a direction that is away from the lower chamber.

Abstract: A substrate is positioned in exposure to a plasma generation region within a plasma processing chamber. A first plasma is generated within the plasma generation region. The first plasma is configured to cause deposition of a film on the substrate until the film deposited on the substrate reaches a threshold film thickness. The substrate is then exposed to ultraviolet radiation to resolve defects within the film deposited on the substrate. The ultraviolet radiation can be supplied in-situ using either a second plasma configured to generate ultraviolet radiation or an ultraviolet irradiation device disposed in exposure to the plasma generation region. The ultraviolet radiation can also be supplied ex-situ by moving the substrate to an ultraviolet irradiation device separate from the plasma processing chamber. The substrate can be exposed to the ultraviolet radiation in a repeated manner to resolve defects within the deposited film as the film thickness increases.

Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include modifying one or more surface layers of material on the substrate and exposing the one or more modified surface layers on the substrate to an electron source thereby removing, without using a plasma, the one or more modified surface layers on the substrate. An apparatus may include a processing chamber, a process gas unit, an electron source, and a controller with instructions configured to cause the process gas unit to flow a first process gas to a substrate in a chamber interior, the first process gas is configured to modify one or more layers of material on the substrate, and to cause the electron source to generate electrons and expose the one or more modified surface layers on the substrate to the electrons, the one or more modified surface layers being removed, without using a plasma.

Abstract: A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

Abstract: A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. A replacement station is coupled to the second side of the isolation valve. The replacement station includes an exchange handler and a part buffer. The part buffer includes a plurality of compartments to hold new or used consumable parts. The process module includes a lift mechanism to enable placement of a consumable part installed in the process module to a raised position. The raised position provides access to the exchange handler to enable removal of the consumable part from the process module and store in a compartment of the part buffer. The exchange handler of the replacement station is configured to provide a replacement for the consumable part from the part buffer back to the process module.

Abstract: IR radiation may be used to examine substrates prior to a fabrication operation in order to adjust processing parameters of the fabrication operation, or to determine features of the substrate. A thermographic image may be collected and provided to a transfer function or machine learning model to determine processing parameters or features. The processing parameters may improve the uniformity of the wafer and/or achieve a desired target feature value.

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

Abstract: Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.