Abstract: Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.

Abstract: A determination is made of a real-time azimuthal position of a notch alignment feature located on a support surface of a substrate holder relative to a fixed reference ray extending perpendicularly away from a rotational axis of the substrate holder as the substrate holder rotates about the rotational axis. A determination is made of an approach initiation azimuthal position of the notch alignment feature relative to the fixed reference ray at which vertical movement of the substrate holder should initiate in order to have the notch alignment feature located at a prescribed azimuthal position relative to the fixed reference ray when the substrate holder reaches a prescribed vertical position. A determination is made of a time delay required to have the notch alignment feature located at the approach initiation azimuthal position. Vertical movement of the substrate holder is initiated in accordance with the determined time delay.

Abstract: In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

Abstract: A substrate processing system includes a processing chamber. A pedestal is arranged in the processing chamber. An edge coupling ring is arranged adjacent to the pedestal and around a radially outer edge of the substrate. An actuator is configured to selectively move a first portion of the edge coupling ring relative to the substrate to alter an edge coupling profile of the edge coupling ring.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.

Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.

Abstract: Systems and techniques for determining and correcting inter-wafer misalignments in a stack of wafers transported by a wafer handling robot. An enhanced automatic wafer centering system is provided that may be used to determine a smallest circle associated with the stack of wafers, which may then be used to determine whether or not the stack of wafer meets various process requirements and/or if a centering correction can be made to better align the wafers with a receiving station coordinate frame.

Abstract: Localized stresses can be modulated in a film deposited on a bowed semiconductor substrate by selectively and locally curing the film by ultraviolet (UV) radiation. A bowed semiconductor substrate can be asymmetrically bowed. A UV-curable film is deposited on the front side or the backside of the bowed semiconductor substrate. A mask is provided between the UV-curable film and a UV source, where openings in the mask are patterned to selectively define exposed regions and non-exposed regions of the UV-curable film. Exposed regions of the UV-curable film modulate localized stresses to mitigate bowing in the bowed semiconductor substrate.

Abstract: Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. For instance, the techniques herein may involve providing a substrate in a process chamber, where the substrate includes a photoresist layer over a substrate layer, and where the photoresist includes metal, and treating the photoresist to modify material properties of the photoresist such that etch selectivity in a subsequent post-exposure dry development process is increased. In various embodiments, the treatment may involve exposing the substrate to elevated temperatures and/or to a remote plasma. One or more process conditions such as temperature, pressure, ambient gas chemistry, gas flow/ratio, and moisture may be controlled during treatment to tune the material properties as desired.

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

Abstract: In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

Abstract: A multi-signal radio frequency (RF) source includes an RF source; and a switch including an input in communication with an output of the RF source, a first output and a second output. The switch is configured to selectively connect the input to one of the first output and the second output. An RF generator in communication with the first output of the multi-signal RF source is configured to generate plasma in a processing chamber. A remote plasma generator in communication with the second output of the multi-signal RF source is configured to supply remote plasma to the processing chamber.

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.

Abstract: Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.

Abstract: An apparatus for processing stacks is provided. A first gas source is provided. A first gas manifold is connected to the first gas source. A first processing station has a first gas outlet, wherein the first gas outlet is connected to the first gas manifold. A first variable conductance valve is between the first gas source and the first gas outlet along the first gas manifold.

Abstract: A substrate processing system for treating a substrate includes a manifold and a plurality of injector assemblies located in a processing chamber. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. A dose controller is configured to communicate with the valve in each of the plurality of injector assemblies and adjust a pulse width supplied to the valve in each of the plurality of injector assemblies based on at least one of manufacturing differences between the valves in each of the plurality of injector assemblies and non-uniformities of the valves in each of the plurality of injector assemblies to cause a desired dose to be supplied from the valve in each of the plurality of injector assemblies.

Abstract: An apparatus for providing signals to a device may include one or more radiofrequency signal generators, and electrically-small transmission line, which couples signals from the one or more RF signal generators to the fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.