Patents Assigned to Lam Research
  • Method and apparatus for transporting a substrate using non-Newtonian fluid
    Publication number: 20060285930
    Abstract: A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.
    Type: Application
    Filed: June 15, 2005
    Publication date: December 21, 2006
    Applicant: LAM RESEARCH CORPORATION
    Inventors: John de Larios, Mike Ravkin, John Parks, Mikhail Korolik, Fred Redeker
  • Method and apparatus for cleaning a substrate using non-newtonian fluids
    Publication number: 20060283486
    Abstract: A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.
    Type: Application
    Filed: June 15, 2005
    Publication date: December 21, 2006
    Applicant: LAM RESEARCH CORPORATION
    Inventors: John de Larios, Mike Ravkin, Jeffrey Farber, Mikhail Korolik, Fred Redeker
  • Smart component-based management techniques in a substrate processing system
    Patent number: 7152011
    Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: December 19, 2006
    Assignee: Lam Research Corporation
    Inventors: Neil Benjamin, Richard Alan Gottscho, Nicolas Bright, Robert Steger
  • Tungsten silicide etch process with reduced etch rate micro-loading
    Publication number: 20060273072
    Abstract: The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15.
    Type: Application
    Filed: May 23, 2006
    Publication date: December 7, 2006
    Applicant: Lam Research Corporation
    Inventors: Sok Tan, Shenjian Liu, Harmeet Singh, Sam Lee, Linda Lee
  • High aspect ratio etch using modulation of RF powers of various frequencies
    Patent number: 7144521
    Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
    Type: Grant
    Filed: December 15, 2003
    Date of Patent: December 5, 2006
    Assignee: Lam Research Corporation
    Inventors: Camelia Rusu, Rajinder Dhindsa, Eric A. Hudson, Mukund Srinivasan, Lumin Li, Felix Kozakevich
  • System and method for modulating flow through multiple ports in a proximity head
    Patent number: 7143527
    Abstract: A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: December 5, 2006
    Assignee: Lam Research Corporation
    Inventors: James P. Garcia, Fred C. Redeker, John de Larios
  • Apparatus for developing photoresist and method for operating the same
    Publication number: 20060269877
    Abstract: A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.
    Type: Application
    Filed: August 15, 2005
    Publication date: November 30, 2006
    Applicant: Lam Research Corporation
    Inventors: John Boyd, Fritz Redeker, David Hemker
  • System, method and apparatus for self-cleaning dry etch
    Patent number: 7140374
    Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: November 28, 2006
    Assignee: Lam Research Corporation
    Inventors: Andrew D. Bailey, III, Shrikant P. Lohokare, Arthur M. Howald, Yunsang Kim
  • Method for bilayer resist plasma etch
    Patent number: 7141505
    Abstract: A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4 gas. Then the bilayer resist is etched.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: November 28, 2006
    Assignee: Lam Research Corporation
    Inventors: Wendy Nguyen, Chris Lee
  • Apparatus and method for depositing and planarizing thin films of semiconductor wafers
    Publication number: 20060260932
    Abstract: An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
    Type: Application
    Filed: July 28, 2006
    Publication date: November 23, 2006
    Applicant: Lam Research Corp.
    Inventors: Mike Ravkin, John Boyd, Yezdi Dordi, Fred Redeker, John deLarios
  • Enhanced process and profile simulator algorithms
    Patent number: 7139632
    Abstract: A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: November 21, 2006
    Assignee: Lam Research Corporation
    Inventors: David Cooperberg, Vahid Vahedi
  • Methods and apparatus for tuning a set of plasma processing steps
    Patent number: 7138067
    Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
    Type: Grant
    Filed: September 27, 2004
    Date of Patent: November 21, 2006
    Assignee: Lam Research Corporation
    Inventors: Vahid Vahedi, John Daugherty, Harmeet Singh, Anthony Chen
  • Apparatus and method for utilizing a meniscus in substrate processing
    Publication number: 20060254078
    Abstract: A method for processing a substrate is provided. The method includes applying an active agent to an active region of a surface of the substrate. Then, the method includes generating a fluid meniscus on the surface of the substrate with a proximity head, where the fluid meniscus is surrounding the active region. In one example, processing the surface of the substrate with the active agent includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation, and processing the surface of the substrate with the fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.
    Type: Application
    Filed: June 5, 2006
    Publication date: November 16, 2006
    Applicant: Lam Research Corp.
    Inventor: Robert O'Donnell
  • Method for resist strip in presence of regular low k and/or porous low k dielectric materials
    Publication number: 20060258148
    Abstract: A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.
    Type: Application
    Filed: May 10, 2005
    Publication date: November 16, 2006
    Applicant: Lam Research Corporation
    Inventors: Helen Zhu, Reza Sadjadi
  • Etch with ramping
    Patent number: 7135410
    Abstract: A method for etching a feature in an etch layer through a mask over a substrate. The substrate is placed in a process chamber. An etch plasma is provided to the process chamber, where the etch plasma begins to etch. A feature is etched in the etch layer with the etch plasma. At least one etch plasma parameter is ramped during the etching of the feature to optimize plasma parameters with the changing etch depth and the feature is etched with the ramped plasma until the feature is etched to a feature depth.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: November 14, 2006
    Assignee: Lam Research Corporation
    Inventors: Keren Jacobs, Aaron Eppler
  • Copper interconnect seed layer treatment methods and apparatuses for treating the same
    Patent number: 7135098
    Abstract: A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.
    Type: Grant
    Filed: July 1, 2002
    Date of Patent: November 14, 2006
    Assignee: Lam Research Corporation
    Inventor: Diane J. Hymes
  • Unitary slot valve actuator with dual valves
    Patent number: 7128305
    Abstract: A unitary slot valve actuator is in a vacuum body between process and transport modules. A separate valve is provided on the unitary actuator for each of two valve slots, each slot being closed or opened according to the position of the unitary actuator. The separate valves allow a vacuum condition to be maintained in the transport module while an adjacent process module is open to the atmosphere for servicing. Access to both open valves for servicing is by centering the unitary actuator to hold both valves open, but not vertically-spaced, relative to the slots. The open valves are easily reached by a service worker through an access port. A computer workstation operates a controller for the slot closure, and for moving the unitary actuator and the valves from the open and centered position, away from the slots to expose seal surfaces around the slots for cleaning.
    Type: Grant
    Filed: April 19, 2005
    Date of Patent: October 31, 2006
    Assignee: Lam Research Corporation
    Inventor: Gregory A. Tomasch
  • Method and apparatus for fluid delivery to a backside of a substrate
    Patent number: 7128279
    Abstract: A fluid delivery device for delivering fluid to the backside of a substrate while minimizing waste is provided. The device includes an inner cylindrical tube having a top opening and a bottom opening. An upper cap overlying a top portion of the inner cylindrical tube is included. The upper cap is moveably disposed over the inner cylindrical tube. The upper cap includes a top with at least one hole defined therein. The top includes a sidewall extending therefrom. A system and a method for reducing an amount of a cleaning chemistry applied to a backside of a wafer during a cleaning operation are also provided.
    Type: Grant
    Filed: January 14, 2004
    Date of Patent: October 31, 2006
    Assignee: Lam Research Corporation
    Inventors: John M. Boyd, Carl Woods
  • Methods and systems for a stress-free cleaning a surface of a substrate
    Patent number: 7129167
    Abstract: A method of cleaning a substrate includes receiving a substrate and applying a stress-free cleaning process to the top surface of the substrate. The substrate includes a top surface that is substantially free of device dependent planarity nonuniformities and device independent planarity nonuniformities. The top surface also includes a first material and a device structure formed in the first material, the device structure being formed from a second material. The device structure has a device surface exposed. The device surface has a first surface roughness. A system for stress-free cleaning a substrate is also described.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: October 31, 2006
    Assignee: LAM Research Corporation
    Inventors: Andrew D. Bailey, III, Shrikant P. Lohokare, Yunsang Kim, Simon McClatchie
  • Methods and systems for processing a substrate using a dynamic liquid meniscus
    Patent number: 7127831
    Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: October 31, 2006
    Assignee: LAM Research Corporation
    Inventors: James P. Garcia, John M. de Larios, Michael Ravkin, Fred C. Redeker, Carl Woods