Abstract: A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing temperature of greater than about 200 degrees C. A process gas is injected into the plasma zone to form a plasma and the substrate is processed.

Abstract: A method for cleaning and drying a front and a back surface of a substrate is provided. The method includes brush scrubbing the back surface of the substrate using a brush scrubbing fluid chemistry. The method further includes applying a front meniscus onto the front surface of the substrate upon completing the brush scrubbing of the back surface. The front meniscus includes a front cleaning chemistry that is chemically compatible with the brush scrubbing fluid chemistry.

Abstract: An invention is disclosed for backside particle removal during a semiconductor manufacturing process. Cleaning sites are defined on the backside of a wafer. The cleaning sites are regions of the backside of the wafer that physically contact a chuck during a semiconductor fabrication process. Once the cleaning sites are defined, the backside of the wafer is cleaned, where the cleaning is primarily directed to the cleaning sites. Typically, the contact regions can correspond to pin positions of a chuck pin array, or wafer contact areas on a vacuum chuck. A laser or a megasonic wand can be used to provide the site-specific cleaning of the wafer backside.

Abstract: A system and a method for cleaning and rinsing a wafer includes at least three rollers that are capable of supporting a wafer by an edge of the wafer. At least one of the rollers is driven and thereby capable of rotating the wafer. At least one of the rollers is a movable roller mounted on an actuator. The system and method also includes a first movable scrubbing roller capable of being moved away from and alternatively to the first side of the wafer. A second movable scrubbing roller capable of being moved away from and alternatively to a second side of the wafer is also included. The second side of the wafer opposes the first side of the wafer. The system and method also includes at least one first side nozzle directed toward the first side of the wafer and at least one second side nozzle directed toward the second side of the wafer.

Abstract: A semiconductor chip formed on a substrate is provided. An oxygen-doped silicon carbide etch stop layer is formed over the substrate. An organosilicate glass layer is formed over the oxygen-doped silicon carbide etch stop layer. A feature is selectively etched in the organosilicate glass layer using an etch with an organosilicate glass to oxygen-doped silicon carbide selectivity greater than 5:1.

Abstract: A system for cleaning a semiconductor substrate is provided. The system includes transducers for generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate and an acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate. Each orientation of the acoustic energy may be simultaneously or alternately generated.

Abstract: MOS transistor formed on a semiconductor substrate of a first conductivity type and method of fabrication are provided. The device includes (a) an interfacial layer formed on the substrate; (b) a high dielectric constant layer covering the interfacial layer that comprises a material that is selected from the group consisting of Ta2O5, Ta2(O1?xNx)5 wherein x ranges from greater than 0 to 0.6, a solid solution of (Ta2O5)r—(TiO2)1?r wherein r ranges from about 0.9 to less than 1, a solid solution (Ta2O5)s—(Al2O3)1?s wherein s ranges from 0.9 to less than 1, a solid solution of (Ta2O5)t—(ZrO2)1?t wherein t ranges from about 0.9 to less than 1, a solid solution of (Ta2O5)u—(HfO2)1?u wherein u ranges from about 0.9 to less than 1, and mixtures thereof wherein the interfacial layer separates the high dielectric constant layer from the substrate; (b) a gate electrode having a width of less than 0.

Abstract: Apparatus and methods control CMP to uniformly polish a series of wafers. Average motor current I(avg) drawn by, and related average work W(avg) performed by, motors during CMP on the wafers reliably indicate quality of a roughness polishing characteristic of a polishing surface of a polishing pad. A conditioner controller controls a rate at which the quality of the polishing surface is restored by conditioning in relation to a rate of change of the quality of the polishing surface due to the CMP. Motor current is measured and averaged over many CMP-processed wafers. The method defines a baseline range of values of average work and controls conditioning according to whether average work is within the baseline range. When the polishing surface moves at constant velocity relative to each of the wafers that are being polished, a control signal based on average motor current represents the quality of the polishing characteristic.

Abstract: A fluid delivery module for use in preparing a substrate is provided. The fluid delivery module includes a process bowl designed to contain a substrate to be prepared. The process bowl has a bottom wall and a sidewall. The fluid delivery module further includes a fluid delivery ring configured to be attached to the sidewall of the process bowl. The fluid delivery ring includes a plurality of inlet and outlet pairs. Each of the plurality of inlet and outlet pairs is defined in the fluid ring and is designed to receive a respective supply tube. Each respective supply tube has an end that terminates at each of the outlets of the fluid delivery ring and is configured to direct fluid onto a surface of the substrate.

Abstract: A system for cleaning a substrate includes a tank defining an inner cavity between a base and sidewalls extending therefrom. A source of acoustic energy affixed to an outer surface of one of the sidewalls. The tank is configured to decouple a direction associated with the acoustic energy from the source of acoustic energy and direct the acoustic energy toward the substrate.

Abstract: An apparatus and method for evenly distributing a polishing fluid onto a polishing pad during a chemical mechanical planarization process, wherein the polishing fluid is dispersed by way of a spray being emitted from a spray nozzle. The pattern of polishing fluid applied to the polishing pad can be modified by adjustment of geometric parameters of the spray nozzle. The apparatus is configured with actuating mechanisms for translating and rotating the spray nozzle relative to the polishing pad in order to adjust a pattern of distribution of the polishing fluid. The method of dispersing polishing fluid onto the polishing pad produces an even distribution of polishing fluid across a width of the polishing pad.

Abstract: A method for preventing de-lamination of semiconductor wafer film stacks during a linear belt-type chemical mechanical planarization (CMP) process is provided. The method implements a pulsed polishing head rotation during a CMP process to maintain a slurry distribution across the width of a belt pad. The slurry distribution is maintained in a manner that prevents de-lamination of a wafer film having weak adhesion characteristics. Thus, the pulsed polishing head rotation implemented by the method reduces de-lamination of low-K material film layers during the CMP process.

Abstract: A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described.

Abstract: Broadly speaking, an invention is provided for monitoring a plasma optical emission. More specifically, the present invention provides a method for monitoring the plasma optical emission through a variable aperture to detect an endpoint of a plasma etching process without interferences that could lead to false endpoint calls. The method includes collecting optical emission data from a plasma through an aperture defined by moveable members. The moveable members are capable of varying a configuration of the aperture. The method also includes holding the moveable members at a particular time to cause the aperture to maintain a fixed configuration. The method further includes detecting a specific perturbation in the plasma optical emission while holding the moveable members.

Abstract: A system and method of providing RF to a transducer includes an oscillator, an RF generator, and a voltage phase detector. The oscillator has a frequency control input and an RF signal output. The RF generator has an input coupled to the oscillator RF signal output and an RF generator output coupled to the transducer. The voltage phase detector includes a first phase input coupled to the RF signal output of the oscillator, a second phase input coupled to the RF generator output, and a frequency control signal output coupled to the oscillator frequency control voltage input.

Abstract: A substrate processing system is provided. The substrate processing system comprises a brush assembly that includes a core, a transducer, and a brush. The core is configured to include a plurality of orifices extending from a center of the brush core to an outer surface of the brush core. The transducer is configured to be disposed on an outer surface of the core. The transducer is capable of resonating at a high frequency. The brush includes a plurality of openings, and is configured to cover the transducer. When the transducer resonates at the high frequency, high energy acoustic energy is imparted from the transducer to a surface of a substrate to be prepared at a respective location of each opening of the plurality of openings.

Abstract: An invention is provided for a chemical mechanical planarization apparatus. The apparatus includes a cylindrical frame, a polishing membrane attached to an end of the cylindrical frame, and a pad support disposed within the cylindrical frame and below the polishing membrane that is capable of differentially flexing the polishing membrane. The pad support can be air bearing that provides air pressure to the polishing membrane to differentially flex the polishing membrane during a CMP process. In a further aspect, the pad support can be in contact with the polishing membrane, and include mechanical elements that are capable of differentially flexing the polishing membrane during a CMP process. In addition, the apparatus can include a conditioner element disposed above the polishing membrane, and a conditioner pad support disposed below the polishing membrane and the conditioner element, wherein the conditioner element is capable of eroding the polishing membrane.

Abstract: A system and method for processing an edge of a substrate includes an edge roller and a first proximity head. The first proximity head being mounted on the edge roller. The first proximity head capable of forming a meniscus and including a concave portion and multiple ports opening into the concave portion. The concave portion being capable of receiving an edge of a substrate and the ports including at least one process liquid injection port, at least one vacuum port and at least one surface tension control port.

Abstract: An apparatus is provided for polishing a substrate. The apparatus includes a polishing pad configured to traverse from at least a first point to a second point. A first sensor is located near the first point and oriented so as to sense an incoming temperature of the polishing pad. A second sensor is located near the second point and oriented so as to sense an outgoing temperature of the polishing pad. A difference between the incoming temperature and the outgoing temperature is then used to determine endpoint of a polishing operation.

Abstract: A method for processing a wafer in a spin, rinse, and dry (SRD) module is provided. The method includes engaging a wafer in a process plane, spinning the wafer in the process plane, and cleaning a top surface and a bottom surface of the wafer while spinning the wafer in the process plane. The process plane is configured to define a process angle with a horizontal plane. The process angle is configured to optimize the performance of the SRD module.