Abstract: Provided with a pellicle inspection apparatus that inspects a pellicle film of a mask provided with a pellicle and used in EUV lithography. The pellicle inspection apparatus includes: an illumination optical system that projects a converging illuminating beam toward the pellicle film; a light collection optical system including an object lens having an optical axis substantially orthogonal to the pellicle film and that collects scattering light outgoing from a foreign substance present on the pellicle film; and a detection system that detects the scattering light collected by the light collection optical system, wherein an incident angle ?2 of the illuminating beam with respect to the pellicle film satisfies Expression ?2??0>?1+23°, where ?0 is a collecting angle (half angle) of the illuminating beam, and ?1 is a maximum light-receiving angle (half angle) of the object lens.

Abstract: Provided are a defect classifying method and an inspection apparatus which are capable of classifying a defect by distinguishing a basal plane dislocation, which is a killer defect in bipolar high-voltage elements, from other defects. The defect classifying method according to the present invention includes: projecting an illumination beam toward a silicon carbide substrate and forming a reflection image and a photoluminescence image; a first inspection step of detecting a defect image from the reflection image formed; a second inspection step of detecting a defect image from the photoluminescence image formed; and a defect classification step of classifying detected defects based on whether or not the defect image is detected and the shape of the detected defect image.

Abstract: Provided is a phase shift amount measuring apparatus and method capable of measuring a phase shift amount and a transmittance of a phase shift mask in one measurement step by using a miniaturized monitor pattern. The phase shift amount and transmittance of the monitor pattern are simultaneously measured using a shearing interferometer. The phase shift amount is obtained from a phase difference of interference light between light passing through the monitor pattern and light passing through a non-pattern area. The transmittance of the monitor pattern is obtained using an amplitude of interference light between light passing through the monitor pattern and light passing through the non-pattern area and an amplitude of interference light between light beams passing through the non-pattern area. The use of common interference images in measuring the phase shift amount and transmittance enables measurement of both the phase shift amount and the transmittance in one measurement operation.

Abstract: A defect inspection device according to one aspect of the present invention includes a light source, a detector that receives light from an illuminated region of a sample, a stage that changes a relative position between light from the light source and the sample in order to sequentially inspect a plurality of unit inspection regions, a comparator that compares a detection signal output from the detector with a threshold according to scanning in the stage, a mask position setting unit that sets a common position of the plurality of unit inspection regions as a mask position in order to mask the common position when the plurality of unit inspection regions are sequentially inspected, and a defect detection unit that detects a defect based on a comparison result in the comparison unit in another region than the mask position.

Abstract: A chucking device is provided, the chucking device having low dusting characteristics and high detergent properties, and being capable of vacuum-sucking even a substrate having a large warpage, and a chucking method using the chucking device is also provided. The chucking device vacuum-sucks and holds a wafer. The chucking device includes a perforated plate having a plurality of through-holes and being mounted with a wafer, the through-holes penetrating through both sides of the perforated plate; a porous plate that supports a surface other than a mounting surface of the perforated plate, on which the wafer is mounted, transmits a vacuum state to the wafer through the plurality of through-holes, and has a pore to limit a flow rate; and a vacuum pump that exhausts an air through the pore of the porous plate.

Abstract: A system including a microscope and an inspection apparatus in which an objective lens having a large numerical aperture is used for detecting a defect existing inside a sample. A light source apparatus produces linearly polarized light. The polarization maintaining fibers optically coupled to the light source apparatus project the linearly polarized light onto the sample surface as an illumination beam of P-polarized light at an incidence angle substantially equal to the Brewster's angle of the sample. The scattered light generated by the defect existing in the sample is emitted from the sample and is collected by the objective lens whose optical axis is perpendicular to the sample surface. Since the illumination beam of P-polarized light is projected at the incidence angle equal to the Brewster's angle of the sample, no surface reflection occurs and it is possible to use the objective lens having a large numerical aperture.

Abstract: The field of view of an objective lens is divided into two areas, and a transmission image of a photomask and a composite image obtained by optically synthesizing a transmission image and a reflection image of the photomask are picked up in parallel. A drop image generated at an edge portion of a pattern portion in the composite image is deleted by limiter processing or masking processing, or is deleted by using primary-differentiated signals of a composite image signal and a transmission image signal.

Abstract: The field of view of an objective lens is divided into two areas, and a transmission image of a photomask and a composite image obtained by optically synthesizing a transmission image and a reflection image of the photomask are picked up in parallel. A drop image generated at an edge portion of a pattern portion in the composite image is deleted by limiter processing or masking processing, or is deleted by using primary-differentiated signals of a composite image signal and a transmission image signal.

Abstract: Provided are a chucking device having low dusting characteristics and high detergent properties and capable of vacuum-sucking even a substrate having a large warpage, and a chucking method using the same. A chucking device according to an aspect of the present invention vacuum-sucks and holds a wafer. The chucking device includes: a perforated plate having a plurality of through-holes and being mounted with a wafer, the through-holes penetrating through both sides of the perforated plate; a porous plate that supports a surface other than a mounting surface of the perforated plate, on which the wafer is mounted, transmits a vacuum state to the wafer through the plurality of through-holes, and has a pore to limit a flow rate; and a vacuum pump that exhausts an air through the pore of the porous plate.

Abstract: Substrate inspection apparatus, in which the acquisition of the inspection data for a defect and the acquisition of the focus data of the objective lens are performed in parallel, includes an autofocus apparatus for controlling position of the objective lens along its optical axis. The autofocus apparatus includes a focus error detection unit and a focus control signal generation unit for generating a focus control signal for controlling the position of the objective lens for each scan line using a focus data signal composed of an objective position signal or the objective position signal to which a focus error signal is added. When “i” is assumed as a positive integer and “m” is as a natural number, the focus data signal which was acquired during the scanning period of i-th scan line is used to produce the focus control signal used to scan the (i+2m)-th scan line.

Abstract: Provided are an analysis apparatus and an analysis method which are capable of recognizing a local state change of an internal structure of a secondary battery. The analysis apparatus includes: an observation cell that houses a secondary battery; a charging and discharging controller that controls charging and discharging of the secondary battery; an image pickup device that captures color images of the secondary battery at a predetermined time interval; and a charging and discharging data detection unit that acquires charging and discharging data on the secondary battery during charging and discharging. Color image signals output from the image pickup device and charging and discharging data signals output from the charging and discharging data detection unit are supplied to a signal processing device. The signal processing device outputs a unit that temporally links time-series color image signals and time-series charging and discharging data signals, and designated analysis data.

Abstract: A defect inspection device according to one aspect of the present invention includes a light source, a detector that receives light from an illuminated region of a sample, a stage that changes a relative position between light from the light source and the sample in order to sequentially inspect a plurality of unit inspection regions, a comparator that compares a detection signal output from the detector with a threshold according to scanning in the stage, a mask position setting unit that sets a common position of the plurality of unit inspection regions as a mask position in order to mask the common position when the plurality of unit inspection regions are sequentially inspected, and a defect detection unit that detects a defect based on a comparison result in the comparison unit in another region than the mask position.

Abstract: A defect coordinates measurement method includes a step of detecting detected coordinates of a fiducial mark and a defect of a mask blank placed on support pins, a step of detecting detected coordinates of the alignment mark of a reference mask placed on the support pins, a step of extracting a reference mark near the detected coordinates of the defect among the plurality of reference marks based on the detected coordinates of the defect of the mask blank and the alignment mark of the reference mask, a step of detecting detected coordinates of the extracted reference mark, and a step of calculating coordinates of the defect based on the detected coordinates of the reference mark and the detected coordinates of the defect.

Abstract: The plasma shield device (13) comprises a hollow structure (40) made of monocrystal body of silicon carbide and having an inside space (40a) and a first and second openings (40b,40c) which are opposed to each other across the inside space. During operation of the plasma generation apparatus, the internal space of the hollow structure forms a discharge zone in which the plasma is generated. Discharge gas is supplied to the internal space of the hollow structure through the first opening and the EUV radiation is mainly emitted through the second opening.

Abstract: The present invention provides a radiation source apparatus which can generate a DUV radiation beam having a wavelength of 193.4 nm efficiently.

Abstract: A system including a microscope and an inspection apparatus in which an objective lens having a large numerical aperture is used for detecting a defect existing inside a sample. A light source apparatus produces linearly polarized light. The polarization maintaining fibers optically coupled to the light source apparatus project the linearly polarized light onto the sample surface as an illumination beam of P-polarized light at an incidence angle substantially equal to the Brewster's angle of the sample. The scattered light generated by the defect existing in the sample is emitted from the sample and is collected by the objective lens whose optical axis is perpendicular to the sample surface. Since the illumination beam of P-polarized light is projected at the incidence angle equal to the Brewster's angle of the sample, no surface reflection occurs and it is possible to use the objective lens having a large numerical aperture.

Abstract: Substrate inspection apparatus, in which the acquisition of the inspection data for a defect and the acquisition of the focus data of the objective lens are performed in parallel, includes an autofocus apparatus for controlling position of the objective lens along its optical axis. The autofocus apparatus includes a focus error detection unit and a focus control signal generation unit for generating a focus control signal for controlling the position of the objective lens for each scan line using a focus data signal composed of an objective position signal or the objective position signal to which a focus error signal is added. When “i” is assumed as a positive integer and “m” is as a natural number, the focus data signal which was acquired during the scanning period of i-th scan line is used to produce the focus control signal used to scan the (i+2m)-th scan line.

Abstract: The invention is directed to the provision of a wavelength conversion-type ultraviolet light source apparatus that can obtain a stable output. A light source apparatus according to one mode of the invention includes: a laser light source 1 which produces fundamental light L1; at least one nonlinear optical crystal 3 which takes the fundamental light L1 or a harmonic thereof as incident light and outputs wavelength-converted light L2; and polarization adjusting means 2 which is placed in an optical path of the incident light and causes an output of the wavelength-converted light L2 to change by changing its refractive index for a polarized component of the incident light. The polarization adjusting means 2 changes the amount of change of the refractive index in accordance with an electrical signal output from a photodetector 7.

Abstract: The present invention provides a radiation source apparatus which can generate a DUV radiation beam having a wavelength of 193.4 nm efficiently.

Abstract: A via hole depth measurement apparatus generates a light beam of white light, divides the light beam into a measurement and reference beams, focuses the measurement beam and projects it onto a sample, reflects the reference beam and advances it along the original optical path, continuously changes a relative optical path length difference between optical path lengths of the measurement and reference beams, combining reflected light from the sample and from the reflected reference beam and generates an interference beam, changes a relative distance between an objective lens which focuses the measurement beam and the sample, detects a relative position between the objective lens and the sample, receives the interference beam and outputs an interference signal, and, and outputs recessed portion depth information based on displacement information based on the interference signal and the relative position between the objective lens and the sample.