Abstract: A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.

Abstract: Provided is a wavelength conversion plate having excellent luminous efficiency of a wavelength-converted light. The wavelength conversion plate includes a dielectric layer with nano pattern, a metal layer formed inside the nano pattern, and a wavelength conversion layer formed on the metal layer and having quantum dot or phosphor which wavelength-converts an excitation light to generate a wavelength-converted light.

Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.

Abstract: There is provided a light emitting device package, including: a package body; a first lead frame coupled to the package body and including a first recess having an exposed side, the first recess having a chip mounting area formed to be downwardly recessed therein, wherein at least a part of a bottom surface of the chip mounting area is exposed to a bottom surface of the package body; a second lead frame coupled to the package body so as to have a predetermined distance from the first lead frame and including a second recess having an exposed side opposed to the exposed side of the first recess; and at least one light emitting device mounted on the chip mounting area of the first lead frame and electrically connected with the first and second lead frames.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

Abstract: There is provided an LED driving circuit. The LED driving circuit according to an aspect of the invention may include: at least one ladder circuit including: (n?1) number (here, n is a positive integer satisfying n?2) of first branches provided between first and second junction points, and connected in-line with each other by n number of first middle junction points, (n?1) number of second branches arranged in parallel with the first branches, and connected in-line with each other by n number of second middle junction points between the first and second junction points, and n number of middle branches connecting m-th first and second middle junction points to each other, wherein at least one LED device is disposed on each of the first, second, and middle branches. Here, the number of LED devices included in each of the first and second branches is greater than the number of LED devices included in each of the middle branches.

Abstract: A light emitting diode module includes: a printed circuit board including an upper circuit layer, a lower metal layer, an insulating layer, and a plurality of through holes; a metallic heat sink formed with a plurality of chip-support portions and disposed below the printed circuit board; a thermal connection layer that has lower and upper surfaces respectively bonded to the heat sink and the lower metal layer of the printed circuit board; and a plurality of light emitting diode chips, each of which is placed in contact with and bonded to one of the chip-support portions and each of which is electrically connected to the upper circuit layer. A method for making the light emitting diode module is also disclosed.

Abstract: A semiconductor LED and a method manufacturing the semiconductor LED are disclosed. The method can include: forming a light emitting structure, which includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together, on a substrate; processing a division groove in the shape of a dotted line from the direction of the substrate or from the direction of the light emitting structure; and dividing the substrate and the light emitting structure along the division groove by applying pressure to at least one of the substrate and the light emitting structure. Embodiments of the invention can prevent total reflection for light emitted through the sides, and as a result, the light emitting efficiency can be improved.

Abstract: An LED display with a reduced thickness is described. In one embodiment, the LED display includes a second support plate between a front support plate and a back support plate. The second support plate enables the front support plate to be thinner than if the second support plate was not included. The second support plate increases the distance between an LED chip and a light exit surface thereby allowing the front support plate thickness to be reduced by about the thickness of the second support plate. In one embodiment, the second support plate allows the thickness of an LED display to be thinner. The second support plate adds structural integrity to a back support plate. Therefore, the back support plate can be thinner, and thickness of the LED display can be reduced.

Abstract: An apparatus for electrosurgery (1) comprising a plurality of adjacent electrodes (2-5) arranged aligned and an electrosurgical current generator (6), connected or connectable to the electrodes (2-5) to induce the flowing of an electrosurgical current through the tissue portions interposed thereamong, wherein said generator (6) powers the electrodes (2-5) so that each electrode lies at a potential (V3-V5) greater than that of the electrode preceding it in the sequence.

Abstract: Provided is a wavelength conversion plate having excellent luminous efficiency of a wavelength-converted light. The wavelength conversion plate includes a dielectric layer with nano pattern, a metal layer formed inside the nano pattern, and a wavelength conversion layer formed on the metal layer and having quantum dot or phosphor which wavelength-converts an excitation light to generate a wavelength-converted light.

Abstract: Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

Abstract: The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film.

Abstract: Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.

Abstract: Provided is a backlight unit including a plurality of light emitting diodes (LEDs) that emit light; a plurality of LED modules having a printed circuit board (PCB) which supports and drives the plurality of LEDs; a plurality of optical sheets that are attached to the top surfaces of the respective LED modules; and a plurality of heat radiating pads that are attached to the rear surfaces of the respective LED modules.

Abstract: A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion.

Abstract: Climate control unit with an interior section containing a storage space and with a closable access opening to the storage section whereby at least one part of the interior section is separated and sealed against the rest of the interior section thus forming a separate germ-proof section. The division takes place at least in part by a membrane that is permeable for water vapor and gas but impermeable for microorganisms.

Abstract: The present invention relates to a swing-out unit for a centrifuge, with the swing-out unit comprising sample vessel recesses and being insertable in a centrifuge rotor head to be swivelable about a swing-out axis, with the axes of at least two sample vessel recesses being arranged in a skewed manner with respect to one another. As a result, more sample vessels can be inserted in a swing-out unit than was previously possible with limited overall space.