Abstract: There is provided a light emitting module including: a printed circuit board; a plurality of light emitting diode chips disposed at a distance from one another on a conductive pattern formed on a top of the printed circuit board; and a connector formed on a bottom of the printed circuit board and electrically connected to the plurality of light emitting diode chips. The light emitting diode chips and the connector are optimally arranged to ensure that the light emitting module is suitably utilized as a high-density linear light source including a great number of light emitting diode chips and emits light outward with minimum loss.

Abstract: A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.

Abstract: A spread lens including a first lens surface through which the emitted light from the light emitting device is inputted; a second lens surface spreading the inputted light to an outside; refraction parts which extend between both side ends of each of the first and second lens surfaces, are formed in a concave-convex shape, and refract the emitted light from the light emitting device; and support parts which extend at both side ends of the second lens surface and separate the refraction parts and the light emitting device from each other.

Abstract: The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity.

Abstract: A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: A retrofit kit allows retrofitting a non-LED canopy or other light fixture for use with LED lamps. The retrofit procedure removes the original electrical components and replaces them with components for use with LED lamps. The same components may be used to manufacture a new LED light fixture that can be used in the same applications as non-LED light fixtures.

Abstract: An optical lens includes: a lens body having an outer surface extending in a longitudinal direction (a first direction) and formed to be symmetrical in a lateral direction (a second direction); and a cavity formed at a lower portion of the lens body and having inner side faces asymmetrical in the longitudinal direction.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

Abstract: An LED based module designed to be easily retrofitted into existing incandescent based light fixtures with minimum or no modification is provided. The LED module of the present disclosure includes a generally cylindrical threaded adapter module including a flat top surface and a conical bottom portion. The bottom portion includes a threaded cavity for receiving a conventional threaded rod of a light fixture which then couples the LED module to the light fixture. The top surface of the LED module is configured to mount a metal core printed circuit board including at least one LED (light emitting diode). Furthermore, the LED module includes at least two channels running therethrough to accommodate wires or conductors from the light fixture to the metal core printed circuit board. The threaded surface of the LED module is configured to accept a conventional shade retainer ring or nut.

Abstract: A colour tunable lighting module is described which includes at least three solid state lighting emitters (such as light emitting diodes) and at least two wavelength converting elements (such as phosphors). The three solid state lighting emitters are formed of the same semiconductor material system and the light generated by them has dominant wavelengths in the blue-green-orange range of the optical spectrum. The two wavelengths converters are used re-emit some of the light from two of the emitters in broader spectra having longer dominant wavelengths, while the third emitter is selected to emit light at a wavelength between the dominant wavelengths of the light from the two emitters and the two converters. A control system may be employed to monitor and control the module and the lighting module can be optimised for tunable high colour quality white light applications.

Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract: A light emitting diode lighting device and system that can be used for illuminating the interior and/or exterior of vehicles, aircraft, watercraft, signage or buildings is provided. It includes a voltage feedback constant current power supply circuitry and high power LEDs. The printed circuit assemblies are firmly mounted onto a continuous or semi-continuous mounting channel case that also works as a heat sink. By this means, it not only increases the reliability of the LED lighting tube but also it provides sufficient heat dissipation capability for the heat generated by the LEDs. Since the operating temperature of the LEDs is controlled and stays in cool condition, it dramatically increases the LED's lifetime and efficiency.

Abstract: A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

Abstract: A susceptor and an apparatus for chemical vapor deposition (CVD) are provided. The susceptor includes a main body configured to include a mounting unit having an uneven plane, and a substrate supporting unit configured to be seated on the mounting unit. A bottom surface of the substrate supporting unit has a shape corresponding to a shape of the mounting unit, and the mounting unit includes a gas discharge hole to discharge gas to the substrate supporting unit. Accordingly, accurate positioning of the substrate supporting unit may not be required when the substrate supporting unit is being returned. Also, the vapor deposition may be stably performed.

Abstract: An optical semiconductor lighting apparatus including a housing with a first end portion and a second end portion that is open, a light source module disposed in the housing, a fan disposed adjacent to the light source module in the housing, the fan rotating in a first direction to blow air toward the light source module, and a reflector disposed adjacent to the second end portion of the housing, the reflector enhancing an illumination scope. A moving path, in which at least a portion of the air drawn into the housing by the fan externally flows through the light source module, is formed in the housing.

Abstract: A method of manufacturing an optical component embedded printed circuit board, the method including: stacking a first insulation layer on one side of a metal core; embedding an optical component in a cavity formed in the metal core; stacking a second insulation layer of a transparent material on the other side of the metal core; and forming a circuit pattern on the first insulation layer, the circuit pattern electrically connected with the optical component.

Abstract: The invention relates to a high power LED package, in which a package body is integrally formed with resin to have a recess for receiving an LED chip. A first sheet metal member is electrically connected with the LED chip, supports the LED chip at its upper partial portion in the recess, is surrounded by the package body extending to the side face of the package body, and has a heat transfer section for transferring heat generated from the LED chip to the metal plate of the board and extending downward from the inside of the package body so that a lower end thereof is exposed at a bottom face of the package body thus to contact the board. A second sheet metal member is electrically connected with the LED chip spaced apart from the first sheet metal member for a predetermined gap, and extends through the inside of the package body to the side face of the package body in a direction opposite to the first sheet metal member. A transparent sealant is sealingly filled up into the recess.