Abstract: Provided are an apparatus for controlling a lamp driving, and a light unit. The apparatus comprises a trans-portion, a plurality of lamps, a first cable, and a current attenuator. The trans-portion outputs a first AC power and a second AC power. The plurality of lamps are lighted-on by the first and second AC powers. The first cable and a second cable transfer an output power from the transformer to both ends of the lamps. The current attenuator removes a deviation in currents input to both ends of the lamps.
Abstract: An automatic exposure (AE) controlling device and method are provided. According to the method, an electric shutter (ES) value and an analog gain control (AGC) value can be calculated through a proportional integral control method according to a brightness value of an inputted image frame. Then, AE compensation on a present image frame can be performed using the calculated ES value and AGC value.
Abstract: Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
Type:
Grant
Filed:
April 17, 2008
Date of Patent:
December 28, 2010
Assignee:
LG Innotek Co., Ltd.
Inventors:
Sung Min Kong, Choong Youl Kim, Hee Seok Choi
Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.
Abstract: Provided are a lens unit, a lens assembly, a camera module, a method of fabricating the camera module and the lens assembly, a method of fabricating an optic member, and an apparatus of fabricating the optic member. The lens unit comprises a lens portion and a supporting portion. The lens portion has a curved surface. The supporting portion extends from the lens portion. The supporting portion comprises a protrusion or a recess. The method of fabricating the optic member comprises injecting a resin composition inside a mold die, pressing the resin composition; and irradiating light onto the resin composition. Due to the pressure, shrinkage of a photo-curable resin composition can be reduced, and thus, the lens unit comprising the protrusion or recess can be easily fabricated.
Type:
Application
Filed:
January 8, 2009
Publication date:
December 23, 2010
Applicant:
LG INNOTEK CO., LTD.
Inventors:
Bum Keun Kim, Jin Han Song, Myoung Jin An, Kee Tae Um, Chan Kwon Lee
Abstract: A lead frame and a light emitting device package using the same are disclosed. More particularly, a lead frame and a light emitting device package using the lead frame which can be easily manufactured and employ a multi-chip structure. The light emitting device package includes a first frame including a heat sink, a second frame coupled to an upper side of the first frame, the second frame including at least one pair of leads and a mount formed with a hole, and a molded structure for coupling the first and second frames to each other.
Type:
Grant
Filed:
February 2, 2007
Date of Patent:
December 21, 2010
Assignees:
LG Electronics Inc., LG Innotek Co., Ltd.
Abstract: An embodiment of this invention relates to a method for manufacturing a light emitting device. The disclosed method for manufacturing a light emitting device includes the steps of: preparing a substrate wherein the crystal growth surface is a-plane or an m-plane; forming a buffer layer on said substrate; forming a semiconductor layer on said buffer layer, and separating said semiconductor layer from said substrate by removing said buffer layer.
Abstract: An embodiment of this invention relates to a light emitting device. The light emitting device disclosed in the embodiment includes: a reflective layer, and a semiconductor layer which includes an emissive layer on said reflective layer, wherein the distance from the reflective layer to the center of the emissive layer corresponds to a constructive interference condition.
Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.
Abstract: Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to a grown epitaxial layer is reduced, and a size of an active layer increases, so that a light-emission efficiency increases. Even when a size of a light-emitting device is small, a short-circuit occurring between electrodes can be prevented. Further, brightness and reliability of the light-emitting device are improved.
Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type super lattice layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type super lattice layer comprises a second conductive type nitride layer and an undoped nitride layer on the active layer. The second conductive type semiconductor layer is formed on the second conductive type super lattice layer.
Abstract: A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1-xN layer formed on the first electrode layer; an active layer formed on the InxGa1-xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.
Abstract: A dual mode vibrator is disclosed. There are available two vibrating units to enable obtainment of a variety of vibrations. Each lateral portion of the first and second vibrating units respectively supported by the first and second elastic members is supported by the first and second support bars secured at the housing for rotatable installation. Therefore, although the first and second vibrating units may rotate about the first and second support bars, the first and second vibrating units are not allowed to deviated or disengaged from the first and second support bars, whereby the plastic deformation of the first and second elastic members is prevented, and the first and second vibrating units can be positioned at predetermined positions at all times to enhance reliability of product.
Abstract: A encoder spacer for a spindle motor and an encoder assembly including the same are disclosed wherein the encoder spacer comprises: a body in monolithic structure made of insulation material; a first terminal electrically connected to a main PCB (Printed Circuit Board) of the spindle motor and protruded from a lateral surface of the body; a second terminal electrically connected to the first terminal via a conduction path through the body, electrically connected to an auxiliary PCB and protruded from an upper surface of the body; a substrate groove including an accommodation space for accommodating the encoder formed at an upper center of the body, wherein the auxiliary PCB slides in the accommodation space by being inserted into a both sides of the accommodation space; and a third terminal exposed at the substrate groove for electrically connecting the auxiliary PCB with the first terminal.
Abstract: Provided are a pulse width modulation (PWM) apparatus and a light source-driving apparatus including the PWM apparatus. The PWM apparatus includes a voltage division part, a capacitor part, a first operational amplifier, a first noise reduction part, and a second operational amplifier. The voltage division part divides and outputs an input voltage. The capacitor part charged by an input current or discharged for provides a charge voltage. The first operational amplifier operates according to a result of comparing a divided voltage output from the voltage division part with the charge voltage output from the capacitor part. The first noise reduction part removes a high frequency noise of the divided voltage. The second operational amplifier converts a signal generated from the capacitor part into a pulse width modulation signal by a dimming control signal.
Abstract: A steering angle sensing apparatus and method are provided. The apparatus and method sense the steering angle of a steering shaft by using a rotated bit value difference corresponding to the rotated angles of magnets, which are respectively coupled on an axis of one of a plurality of sub gears, when the sub gears with respectively different gear ratios rotate with a shaft gear that rotates together with the steering shaft.
Type:
Grant
Filed:
July 13, 2007
Date of Patent:
November 30, 2010
Assignee:
LG Innotek Co., Ltd.
Inventors:
Kyong Ho Kang, Choon Wook Park, Sung Kyu Bae, Chang Hwan Lee
Abstract: A light emitting device may comprise a first semiconductor layer having a first and second surfaces, the first and second surfaces being opposite surfaces, the first semiconductor layer having a plurality of semiconductor columns extending from the second surface, the plurality of semiconductor columns being separated from each other; a light emitting structure formed over the first semiconductor layer, the light emitting structure including a first conductive semiconductor layer, an active layer and a second semiconductor layer, the light emitting structure having a side surface and an exposed side surface of a semiconductor column closest to the side surface of the light emitting structure being non-aligned with the side surface of the light emitting structure; and a substrate provided adjacent to the plurality of semiconductor columns.