Patents Assigned to LG Innotek Co., LTD
  • LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20100295089
    Abstract: Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.
    Type: Application
    Filed: November 3, 2008
    Publication date: November 25, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Geun Ho Kim, Yong Seon Song, Yu Ho Won
  • Nitride semiconductor and method for manufacturing thereof
    Patent number: 7834343
    Abstract: A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: November 16, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Chul Choi
  • Light emitting diode having vertical topology and method of making the same
    Patent number: 7834374
    Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: November 16, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Jae Wan Choi, Duk Kyu Bae, Hyun Kyong Cho, Jong Kook Park, Sun Jung Kim, Jeong Soo Lee
  • Semiconductor light emitting device having roughness and method of fabricating the same
    Patent number: 7829881
    Abstract: A semiconductor light emitting device including a first electrode contact layer, an active layer formed on the first electrode contact layer, a second electrode contact layer formed on the active layer, and a first roughness layer formed on at least one of the first and second electrode contact layers.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: November 9, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ho Sang Yoon
  • Photoluminescent sheet
    Patent number: 7829179
    Abstract: A photoluminescent sheet is disclosed. In one embodiment, the photoluminescent sheet has a phosphor, absorbs some light, of at least one wavelength, of light emitted from a light source, emits particular light of a wavelength different from the wavelength of the emitted light and allows the remaining of the light emitted from the light source to penetrates the photoluminescent sheet, whereas the photoluminescent sheet comprises at least a surface comprising a wet preventing layer for minimizing a contracting area between the photoluminescent sheet and another sheet. According to at least one embodiment, wet is not generated on a screen even though the photoluminescent sheet is connected to other sheets.
    Type: Grant
    Filed: March 12, 2007
    Date of Patent: November 9, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventors: Choong-Yong Sohn, Young-Wook Ko
  • RFID antenna and RFID tag
    Patent number: 7828221
    Abstract: Provided are a radio frequency identification (RFID) antenna and an RFID tag including the RFID antenna. The RFID antenna includes an electric conductor and a conductor that radiate electromagnetic fields isotropically. The RFID tag including the RFID antenna can be installed on a metal plate.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: November 9, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hong Il Kwon
  • Nitride semiconductor light-emitting device comprising a buffer layer including a plurality of layers having different lattice constants and method for manufacturing the same
    Patent number: 7829914
    Abstract: There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire substrate, wherein the buffer layer includes a plurality of layers having different lattice constants, a first n-type nitride semiconductor layer on the buffer layer, an active layer on the first n-type nitride semiconductor layer, and a p-type nitride semiconductor layer on the active layer.
    Type: Grant
    Filed: November 22, 2006
    Date of Patent: November 9, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyo Kun Son
  • Spindle motor and fabricating method thereof
    Patent number: 7830054
    Abstract: A spindle motor, obtaining more accurate shaft perpendicularity and more convenient assembling process, is disclosed, the spindle motor includes: a rotor; a bearing housing into which the rotor is inserted; a base plate fixing the bearing housing; a housing guide fixed to the base plate, the housing guide having at least one vertical portion guiding an outer surface of the bearing housing; a printed circuit board mounted on the base plate; and a stator coupled to an outer surface of the bearing housing and supplied with power from the printed circuit board.
    Type: Grant
    Filed: April 24, 2006
    Date of Patent: November 9, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Tae Wook Lee
  • Lens assembly and method for manufacturing the same
    Patent number: 7826153
    Abstract: Disclosed are a lens assembly and a method for manufacturing the same. The method includes delineating and processing a surface of a lens substrate to form a plurality of lens units; bonding a plurality of such lens substrates having different properties to each other as one integrated body; and dicing the integrated body into a lens unit, thereby producing a plurality of lens assemblies.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: November 2, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jung Ha Hong
  • Package for light emitting device with metal base to conduct heat
    Patent number: 7821020
    Abstract: A light emitting device includes a metal base, an electrical circuit layer provided at an upper side of the metal base for providing a conductive path, a light emitting device mounted in a second region having a smaller thickness than a first region on the metal base, an insulating layer sandwiched between the metal base and the electrical circuit layer, an electrode layer provided at an upper side of the electrical circuit layer, and a wire for electrically connecting the electrode layer and the light emitting device. The light emitting device package has improved light emission efficiency since the light emitting device is placed on a small thickness portion of the metal base.
    Type: Grant
    Filed: July 21, 2005
    Date of Patent: October 26, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jun Seok Park
  • Semiconductor light emitting device having roughness layer
    Patent number: 7821024
    Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a roughness layer on the second conductive semiconductor layer. The second conductive semiconductor layer includes a shape of multiple horns, and the roughness layer includes a shape of multiple horns. The second conductive semiconductor layer includes a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 ?m to about 1.2 ?m and a diameter of about 0.3 ?m to about 1.0 ?m.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: October 26, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Rotor and Vibration Motor
    Publication number: 20100264766
    Abstract: A rotor is provided. The rotor includes a bearing yoke, a supporting member, a rotor substrate, a coil, and a weight coupled to the supporting member. The supporting member is coupled to the bearing yoke. The rotor substrate is supported by the supporting member. The coil is supported by the supporting member and electrically connected to the rotor substrate. The weight is coupled to the supporting member.
    Type: Application
    Filed: November 10, 2008
    Publication date: October 21, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Do Hyun Kim, Jun Hee Ryu, Byung Hee Mun, Young II Park
  • Spindle motor
    Patent number: 7816831
    Abstract: Provided is a spindle motor. The spindle motor includes a base, a bearing housing, a bearing, a shaft, a stator, and a rotor. The bearing housing is disposed at the base. The bearing is fixed to an inside of the bearing housing. The shaft is rotatably supported by the bearing. The stator is disposed around the bearing housing. The rotor includes a rotor yoke coupled to the shaft and a magnet coupled to the rotor yoke. The rotor yoke includes a contact protrusion configured to guide a position of the magnet.
    Type: Grant
    Filed: December 3, 2008
    Date of Patent: October 19, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Se Jong Kim
  • Semiconductor light emitting device
    Patent number: 7816701
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: October 19, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 7812337
    Abstract: A nitride semiconductor light emitting device includes a first nitride semiconductor layer, a first Al-doped nitride semiconductor layer formed on the first semiconductor layer, an activation layer formed on the first Al-doped nitride semiconductor buffer layer, and a second nitride semiconductor layer formed on the activation layer. Another nitride semiconductor light emitting device includes a first nitride semiconductor layer, an activation layer formed on the first nitride semiconductor layer, a second Al-doped nitride semiconductor buffer layer formed on the activation layer, and a second nitride semiconductor layer formed on the second Al-doped nitride semiconductor buffer layer.
    Type: Grant
    Filed: August 19, 2005
    Date of Patent: October 12, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • LED having vertical structure and method for fabricating the same
    Patent number: 7812357
    Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: October 12, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jong Wook Kim, Jae Wan Choi, Hyun Kyong Cho, Jong Ho Na, Jun Ho Jang
  • Display Device and Backlight Unit
    Publication number: 20100254157
    Abstract: Disclosed are a display device and a backlight unit. The display device comprises a flexible light guide plate, a light source disposed at one side of the light guide plate, and a support member disposed in opposition to the light guide plate and the light source to support the light guide plate. The support member allows the light source and the light guide plate to have constant interval therebetween, and prevents the light source and the light guide plate from being tilted each other. The display device and the backlight unit ensure improved brightness and brightness uniformity.
    Type: Application
    Filed: December 1, 2008
    Publication date: October 7, 2010
    Applicant: LG Innotek Co., Ltd.
    Inventor: Hyun Ho Choi
  • Phase shift circuit and backlight unit having the same
    Patent number: 7808216
    Abstract: Disclosed is a phase shift circuit. The phase shift circuit comprises a frequency multiplier outputting a square wave signal by frequency-multiplying a reference signal, a frequency synchronizer receiving the square wave signal to output a triangle wave signal, and a PWM nodule receiving the triangle wave signal to output a phase-shifted multi-channel control signal.
    Type: Grant
    Filed: April 16, 2008
    Date of Patent: October 5, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Taek Soo Kim
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 7808010
    Abstract: A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1-xN layer on the first electrode layer, forming on the first InxGa1-xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.
    Type: Grant
    Filed: August 19, 2005
    Date of Patent: October 5, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME
    Publication number: 20100230685
    Abstract: Provided are a light emitting device, a light emitting device package and a lighting system including the same. The light emitting device (LED) comprises a light emitting structure comprising a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer and a first electrode over the light emitting structure. A portion of the light emitting structure is sloped at a predetermined angle.
    Type: Application
    Filed: March 16, 2010
    Publication date: September 16, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventors: HYUN KYONG CHO, HYUN DON SONG, CHANG HEE HONG, HYUNG GU KIM