Abstract: Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
Type:
Application
Filed:
April 17, 2008
Publication date:
April 29, 2010
Applicant:
LG INNOTEK CO., LTD.
Inventors:
Sung Min Kong, Choong Youl Kim, Hee Seok Choi
Abstract: The LED module comprises a first and a second printed circuit boards comprising one surface formed with at least one of concave and convex parts so that the first and the second printed circuit boards are coupled to each other, and an LED on at least one of the first and the second printed circuit boards, in which a concave part is formed at a portion of a coupling surface of the second printed circuit board corresponding to a convex part formed at a portion of a coupling surface of the first printed circuit board, and an insulating layer is formed at a portion of the coupling surface of the second printed circuit board so as to support a convex part of the first printed circuit board.
Abstract: A half tone mask having a transparent substrate, a light semitransmission layer, and a light shield layer; and a method for fabricating the same. The halftone mask is applied to multiple cycles of a photolithography process, thus shortening a time taken to fabricate the mask and reducing the production costs of the mask. Since a desired pattern is uniformly formed through a light semitransmission layer of the half tone mask of the present invention according to the uniformity of a chrome oxide (CrxOy) film, i.e., the uniformity in sputtering, the halftone mask is not limited in size.
Type:
Grant
Filed:
November 7, 2005
Date of Patent:
April 27, 2010
Assignee:
LG Innotek Co., Ltd.
Inventors:
Sang-Uk Park, Kap-Seok Kang, Keun-Sik Lee, Jae-Woo Park, Yu-Kyung Sim
Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
Abstract: A signal processing apparatus is provided. The signal processing apparatus comprises a plurality of ports which are grouped according to types of signals, in which the signals are grouped according to at least one standard of a communication mode, a frequency use area, a signal band, and a type of a transmission/reception signal.
Abstract: A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1-xN/InyGa1?yN super lattice structure layer formed above the first In-doped GaN layer; a first electrode contact layer formed above the InxGa1-31 xN/InyGa1?yN super lattice structure layer; an active layer formed above the first electrode contact layer and functioning to emit light; a second In-doped GaN layer; a GaN layer formed above the second In-doped GaN layer; and a second electrode contact layer formed above the GaN layer. The present invention can reduce crystal defects of the nitride based 3-5 group compound semiconductor light emitting device and improve the crystallinity of a GaN GaN based single crystal layer in order to improve the performance of the light emitting device and ensure the reliability thereof.
Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.
Type:
Grant
Filed:
February 9, 2007
Date of Patent:
March 30, 2010
Assignees:
LG Electronics Inc., LG Innotek Co., Ltd.
Abstract: A spindle motor is disclosed. The spindle motor includes a base including a PCB, a bearing housing installed on the base and having a bearing therein, a rotating shaft rotatably supported by the bearing, a stator including a core arranged around the bearing housing and a coil wound around the core, a rotor including a rotor yoke supported by the rotating shaft and a magnet coupled to the rotor yoke, and a stopper supported by the base at an outer side of the rotor yoke, and partially located above a portion of the rotor yoke to inhibit the rotor yoke from moving upward.
Abstract: The present invention relates to a light emitting device package and a method for manufacturing the same. The present invention has advantages in that a light emitting device is electrically connected to other devices without use of wire bonding, thereby saving a space for wire bonding and reducing the size of a package.
Type:
Grant
Filed:
May 16, 2006
Date of Patent:
March 23, 2010
Assignees:
LG Electronics Inc., LG Innotek Co., Ltd.
Abstract: A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 ?.
Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
Abstract: Provided is a flat type vibrating motor capable of reducing a consumed current of the motor while maintaining torque of the motor, lengthening even more an operating time of an apparatus such as a mobile communication apparatus in which the flat type vibrating motor is mounted, and shortening a charging period. At least one auxiliary coil separated at a predetermined mechanical degree with respect to a center of the primary coil mounted on the substrate, and series-connected to the primary coil is provided, so that a current flowing through the coil is reduced and torque equivalent to or greater than that of a related art motor can be obtained. Accordingly, an amount of a consumed current of the motor is reduced.
Abstract: Disclosed is a vibration motor. The vibration motor includes a bracket including a support tube protruding from the bracket, a case coupled with the bracket, a support shaft supported by the bracket and the case, a bearing rotatably fitted around the support shaft, a rotor fixed to the bearing to rotate together with the bearing, thereby generating vibration, a stator mounted on the bracket to rotate the rotor through interaction with the rotor, a support member installed around the support tube, and a first washer interposed between the support tube and the bearing and supported by the support member.
Abstract: A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.
Abstract: Provided is a method of fabricating a nitride semiconductor light-emitting device comprising; providing a nitride semiconductor light-emitting device with a GaN layer, bringing the nitride semiconductor light-emitting device into contact with hydrogen separation metal, vibrating the nitride semiconductor light-emitting device and the hydrogen separation metal, removing hydrogen from the GaN layer of the nitride semiconductor light-emitting device and separating the hydrogen separation metal from the nitride semiconductor light-emitting device.
Abstract: Disclosed are a phosphor, method for preparing the same, and light emitting diode using the same. The method comprises the steps of preparing a precursor solution by mixing strontium nitrate (Sr(NO3)2), tetraethyl orthosilicate (TEOS), and europium oxide (Eu) with each other, forming a gel by heating the precursor solution, drying the gel specimen, performing calcination by removing water and organic materials from the dried gel, and preparing a phosphor by reducing the Eu of the gel.
Abstract: A lightening apparatus includes an LED (Light Emitting Diode) module having a plurality of LEDs and a connection terminal for supplying electric power, a diffusing guide for diffusing light emitted from the LEDs, and a cover in which the diffusing guide is installed and to which the LED module is coupled.
Abstract: A stepping motor includes a bracket, a housing having a first end coupled to the bracket and a second end having a reduced width compared with the first end, a stator disposed in the housing to form electric field, a first supporting unit formed on a first end of the bracket, a magnet fixed corresponding to the stator to provide the electric field, a second supporting unit supported on the second end of the housing, a rotor supported by the first and second supporting units, and a stopper fitted on an opened end of the second end of the housing to support the second supporting unit.
Abstract: A camera module, including a printed circuit board, an image sensor chip, and a housing, is provided. A plating line can be formed in an inner layer of the printed circuit board. A method of manufacturing the camera module can include connecting the plating line of the inner layer of the printed circuit board to a pattern of an outer layer using a via hole, performing a plating process, and forming an image sensor, the housing, and a lens part on the printed circuit board.
Abstract: Disclosed are a backlight unit and a display device having the same. The backlight unit comprises a light emitting diode (LED) module comprising an LED, a case supporting the LED module and comprising a bending part that guides and fixes an end portion of the LED module, and a fixing part fixing the LED module to the case.