Abstract: A method for forming a light-emitting package structure provided with a predetermined view angle is provided. The method includes the steps of: disposing a flip chip on a carrier substrate; filling an underfill material between at least two electrodes of the flip chip for supporting the flip-chip; laser lifting-off a growing substrate from the flip chip for forming a thin film chip and exposing an epitaxial structure from the thin film chip; roughening the epitaxial structure exposed from the thin film chip; providing a view angle adjusting structure including a wavelength converting layer on the thin film chip, and selecting a predetermined view angle and achieving the predetermined view angle by adjusting the view angle adjusting structure according to a linear regression formula.

Abstract: An LED package structure includes a conductive frame assembly, a reflective housing, an UV LED chip disposed on the conductive frame assembly, and a die-attach adhesive for bonding the UV LED chip to the conductive frame assembly. The reflective housing includes Silicone Molding Compound (SMC) and filler mixed in the SMC. The energy gap of the filler is greater than or equal to 4 eV. The energy gap of the filler thereof can be chosen by the following formulas. When the refractive index difference between the filler and the SMC is less than or equal to 0.2, the energy gap of the filler is satisfied the following formula. E?1240 (nm·eV)/(??150(nm)). When the refractive index difference between the filler and the SMC is greater than 0.2, the energy gap of the filler is satisfied the following formula. E?1240(nm·eV)/(??50(nm)).

Abstract: An LED package structure includes a ceramic substrate, a ceramic board, a light-emitting unit, a first adhesive layer, a second adhesive layer, and a cover. The ceramic board having a thru-hole is disposed on the ceramic substrate. The light-emitting unit is disposed on the ceramic substrate and is arranged in the thru-hole of the ceramic board. The first and second adhesive layers are disposed on the ceramic board, and the second adhesive layer covers the first adhesive layer. The cover is fixed on the ceramic board by the first and second adhesive layers. Thus, the shearing force of the LED package structure of the instant disclosure is increased by having the first and second adhesive layers, which are connected to each other.

Abstract: A method for manufacturing a light emitting diode structure uses a removable prefilled layer to attach the flip-type chip on a temporary substrate. A growth substrate of the flip-type chip is removed by laser lift-off, and then the light emitting diode structure is attached to a transparent support body. Lastly, the temporary substrate and the prefilled layer are removed.

Abstract: A gas sensor includes a base, an insulating layer, two sensing electrodes, a heating layer, a gas-sensing material, and an exciting light source. A thru-hole is formed on the base, the insulating layer is disposed on the base to cover the thru-hole, and a portion of the insulating layer corresponding to the thru-hole is defined as an element area. Each sensing electrode disposed on the insulating layer has a sensing segment disposed on the element area and a sensing pad disposed outside the element area. The heating layer disposed on the insulating layer has a heating segment disposed on the element area and two heating pads disposed outside the element area. The gas-sensing material is disposed on the element area and covers the sensing segments and the heating segment. The exciting light source is arranged in the thru-hole and is configured to emit light toward the gas-sensing material.

Abstract: A lens of an LED package structure includes a square-shaped base layer, a first light-guiding portion integrally connected to the base layer, a second light-guiding portion taperedly extended from the first light-guiding portion. The second light-guiding portion has an apex located away from the first light-guiding portion. The lens includes four side curved surfaces and four boundary curved surfaces connected to the apex. Four first projecting regions are defined by orthogonally projecting the four boundary curved surfaces onto the base layer, and the four first projecting regions are arranged on two diagonals of the base layer. Any two adjacent boundary curved surfaces are provided with one of the side curved surfaces there-between. Each boundary curved surface has a first radius of curvature (R1), a portion of each side curved surface arranged on the second light-guiding portion has a second radius of curvature (R2), wherein R1/R2=M?{square root over (2)} and M=0.8˜1.2.

Abstract: A light-emitting display device includes a substrate, several light emitting units for emitting light with different wavelengths, and an optical lens. The substrate has at least one receiver for containing these light emitting units. A light guide structure of the light-emitting display device can be the receiver with a specific designed, a frame body with at least one corresponding through hole formed on the corresponding receiver, or at least one optical element formed on the corresponding receiver, so as the light emitted by the light emitting units can be reflected towards the preset optical axis. And the optical lens is formed on the light guide structure as medium for mixing lights of different wavelengths for achieving a uniform lighting effect.

Abstract: A deep UV LED chip includes a light-emitting unit, an electrode unit, an electron blocking layer, and an optical layer. The electron blocking layer is disposed between a multiple quantum well layer and a p-type aluminum gallium nitride layer of the light-emitting unit. The optical layer is formed on the light-emitting unit and has a refractive index ranging from 1.0 to 2.3. Another deep UV LED chip further includes a light-transmitting substrate. The optical layer is formed on the light-transmitting substrate and has a refractive index ranging from 1.0 to a refractive index of the light-transmitting substrate. A package structure containing the deep UV LED chip is also disclosed.

Abstract: A manufacturing method of filling a resin into a housing includes the steps of: providing a housing that has at least one recess, with the recess having first and second spaces, and the first space being disposed above the second space; inverting the housing; injecting a fluid into the recess to fill the first space, with the fluid having a viscosity coefficient and a surface tension less than those of water; and injecting a first resin into the recess, with the first resin having a specific gravity greater than that of the fluid, such that the first resin fills the first space and the fluid fills the second space.

Abstract: An LED package structure includes a chip carrier and an LED chip. The chip carrier includes a ceramic substrate, a circuit layer, a ceramic reflective plate disposed on the ceramic substrate, and a metal slug. The ceramic substrate has a first thru-hole. A main portion of the metal slug is embedded in the first thru-hole, and partially protrudes from the first thru-hole with a height of 10˜30 ?m to define as a protrusion block. An extending portion of the metal slug is connected to the outer edge of protrusion block, and the top surfaces of extending portion and protrusion block are coplanar to define a mounting surface. The ceramic reflective plate has a second thru-hole, and the mounting surface is exposed from the ceramic reflective plate via the second thru-hole. The LED chip is fixed on the mounting surface and is electrically connected to the circuit layer.

Abstract: An LED package structure includes a substrate, a circuit layer and an insulating layer both disposed on the substrate, a light-emitting unit, and a reflective housing integrally formed with the insulating layer. The light-emitting unit includes an LED chip and a fluorescent body encapsulating the LED chip. The light-emitting unit is mounted on the insulating layer and the circuit layer. The fluorescent body of the light emitting unit is spaced apart from the circuit layer with a gap in a range of 3˜10 ?m. The reflective housing is formed on the insulating layer and the circuit layer and is further filled within the gap. A top plane of the reflective housing arranged away from the substrate is lower than or equal to that of the light-emitting unit, and a distance between the two top planes is in a range of 0˜30 ?m.

Abstract: An LED carrier includes a substrate, a metallic layer, an insulating layer, and a reflecting layer. The metallic layer is disposed on the substrate and has a die bonding region and a ring-shaped wiring region separated from the die bonding region. A region arranged between the die bonding region and the ring-shaped wiring region is defined as an insulating region. The insulating layer at least partially covers the insulating region. The reflecting layer is arranged above the die bonding region and at least partially covers the top surface of the insulating layer. Moreover, the instant disclosure also provides a manufacturing method of an LED carrier.

Abstract: An LED package structure includes a base, an LED chip disposed on the base, at least one metal wire, a phosphor sheet, and an encapsulation resin disposed in the base and encapsulating the LED chip, the metal wire, and the phosphor sheet. The LED chip has at least one electrode thereon. The metal wire has an apex and a loop height being defined by the apex. The metal wire is electrically connected to the electrode and the base. The phosphor sheet includes a B-stage resin and a plurality of phosphor powders mixed therewith. The phosphor sheet is adhered to the LED chip by the B-stage resin capable of viscosity and covers the top surface, the side surface, and the electrode of the LED chip. A thickness of the phosphor sheet is smaller than the loop height, and the apex of the metal wire is exposed from the phosphor sheet.

Abstract: An LED package includes a chip carrier, an adhesive layer, one high-voltage LED die, and an encapsulating member. The chip carrier defines a receiving space. The adhesive layer is disposed in the receiving space and has a thermal conductivity of larger than or equal to 1 W/mK. The high-voltage LED die is attached to the adhesive layer to be received in the reflective space and has a top surface formed with a trench. The trench of the high-voltage LED die is disposed at an optical center of the receiving space. The encapsulating member encapsulates the high-voltage LED die and includes a plurality of diffusers. The trench is embedded with the encapsulating member and has a width ranging from 1 ?m to 10 ?m and a depth of less than or equal to 50 ?m.

Abstract: A metallic frame of an LED structure includes two conductive frames spaced apart from each other with a gap and a plurality of extending arms respectively and integrally extended from the conductive frames. Each conductive frame includes a top surface, a bottom surface, and a lateral surface connecting the top and bottom surfaces. Each top surface comprises a sealed region and a mounting region surrounded by the sealed region, and the sealed and mounting regions of each conductive frame are defined by an insulating body. Each conductive frame has at least one slot concavely formed on the sealed region, and the lateral surface is formed with two openings and the slot is communicated with the two openings, such that the slot of each of the conductive frames is configured to separate at least one of the extending arms from the mounting region of the conductive frames.

Abstract: A light emitting device includes a substrate having a top surface, upper and lower metal layers, multiple LED chips, at least one Zener diode, multiple conductive wires and an encapsulant. The top surface includes a central region bounded by an imaginary boundary with a profile conforming to an outline of a circle stacked with a polygon. The central region has a die bonding area corresponding to the circle, and at least one polygonal extension area formed outside the die bonding area. The upper metal layer includes multiple conducting pads surrounding the central region. The LED chips are disposed on the die bonding area. The Zener diode is disposed on the polygonal extension area. The encapsulant is disposed on the substrate and covers the LED chips.

Abstract: A white light emitting device includes an LED chip capable of emitting light with a peak wavelength of 390 to 430 nm, and a wavelength conversion layer including first, second and third fluorescent materials. The first fluorescent material is capable of being excited to emit light with a peak wavelength of 450 to 470 nm. The second fluorescent material is capable of being excited to emit light with a peak wavelength of 450 to 470 nm. The third fluorescent material is capable of being excited to emit light with a peak wavelength of 630 to 650 nm. Light emitted by the white light emitting device has a color temperature below 5000 K, and a general color rendering index value (Ra) and special color rendering index values (R9-R15) all greater than 90.

Abstract: A manufacturing method of an LED package structure includes the steps of providing a base; disposing an LED chip on the base; electrically connecting the base and the LED chip by at least one metal wire, wherein the metal wire has an apex, and a height between the apex and a top surface of the LED chip is defined as a loop height; adhering a first phosphor sheet to the LED chip by a B-stage resin of the first phosphor sheet, wherein the first phosphor sheet covers the top surface, the side surface, and the electrode of the LED chip, the thickness of the first phosphor sheet is smaller than the loop height, and the apex of the metal wire is exposed from the first phosphor sheet; and disposing an encapsulation resin in the base to encapsulate the LED chip, the metal wire, and the first phosphor sheet.

Abstract: An LED device includes a substrate, a number (N) of flip-chip LED die(s), an electrical conductive structure and a lens structure. The substrate has upper and lower surfaces and is formed with multiple through holes. A ratio of LED die(s) surface area to an area of the upper surface of the substrate ranges from 22.7% to 76.2%. The electrical conductive structure includes a number (N) of upper bonding pad assembly (assemblies), a number (N+1) of lower bonding pads and a number (2N) of interconnectors. Each upper bonding pad assembly includes two upper bonding pads electrically connected to the LED die(s). The interconnectors are disposed in the through holes and interconnect the upper and lower bonding pads. The lens structure covers the LED die(s).

Abstract: An LED carrier includes a substrate, a metallic layer, an insulating layer, and a reflecting layer. The metallic layer is disposed on the substrate and has a die bonding region and a ring-shaped wiring region separated from the die bonding region. A region arranged between the die bonding region and the ring-shaped wiring region is defined as an insulating region. The insulating layer at least partially covers the insulating region. The reflecting layer is arranged above the die bonding region and at least partially covers the top surface of the insulating layer. Moreover, the instant disclosure also provides a manufacturing method of an LED carrier.