Patents Assigned to LSI
  • Patent number: 6064588
    Abstract: A logically complementary pair of charge storage capacitors are employed in each memory cell of an embedded dynamic random access memory (DRAM) segment. The complementary capacitors establish a data bit signal from each cell by a relative difference in charge stored on the capacitors. The adverse influences of noise are reduced or eliminated because the noise will generally equally effect both of the complementary capacitors, as well as complementary bit lines connected to the capacitors. Differential sensing of the bit line signals also avoids the influence of noise. A capacitor reference potential conductor distributes substantially equal capacitor reference voltage to each capacitor to allow each capacitor to charge and discharge more uniformly under the influence of noise.
    Type: Grant
    Filed: March 30, 1998
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventor: Harold S. Crafts
  • Patent number: 6062163
    Abstract: An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil.
    Type: Grant
    Filed: June 13, 1997
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventors: Roger Patrick, Philippe Schoenborn, Mark Franklin, Frank Bose
  • Patent number: 6064691
    Abstract: When a mobile communication unit (e.g. a cellular telephone) is powered up, the unit must lock on to a local base station, or "acquire" a base station signal, to enable the user to send and receive calls. To lock on a local base station, the mobile unit must determine the delay at which the base station is sending the pseudo random (PN) code. This process is called the "acquisition." The current art of acquiring a base station involves searching the possible code phases, or delays, one by one until the first signal is found. However, multiple base stations may be available to the mobile user, and the first found pilot signal may not be the strongest and may not be from the nearest base station. The present invention discloses a method and apparatus for searching all possible PN code phases and selecting the strongest phase instead of selecting the first phase.
    Type: Grant
    Filed: October 22, 1997
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventors: Brian Banister, Mark Davis, Roland Rick
  • Patent number: 6065134
    Abstract: A method provides an on-chip repair technique to fix defective row or I/O memory lines in an ASIC memory array with redundancy row or I/O memory lines. The method employs progressive urgency and dynamic repair schemes to optimize the allotted time for repairing defective row and I/O memory lines. Progressive urgency scheme increases the need to repair relative to the available redundancy row or I/O memory lines over the entire repairing time. Dynamic repair executes a mandatory-row or a mandatory-I/O repair as defective row or I/O memory lines are detected. In addition, a recurrence error reroutes the address location of a redundancy memory line to another address location of another redundancy memory line in the event that such redundancy memory line itself is defective, and thus requires further repair.
    Type: Grant
    Filed: March 30, 1998
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventors: Owen S. Bair, Saravana Soundararajan, Adam Kablanian, Thomas P. Anderson, Chuong T. Le
  • Patent number: 6063672
    Abstract: MOS functional devices and electrostatic discharge protection devices are formed on a substrate having a relatively low-resistance area beneath the functional devices to inhibit latch-up of the functional devices and a relatively high resistance area beneath each electrostatic protection device to reduce the snapback holding voltage of each electrostatic discharge protection device.
    Type: Grant
    Filed: February 5, 1999
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventors: Gayle Miller, Samuel C. Gioia, Todd A. Randazzo
  • Patent number: 6064113
    Abstract: A semiconductor device package is presented for housing an integrated circuit which includes bonding fingers located within a conductive ring structure and routed to device terminals on an underside surface of the semiconductor device package. The semiconductor device package includes a die area defined upon a planar upper surface, a conductive ring surrounding the die area, and a first set of bonding fingers arranged within the conductive ring. The die area is dimensioned to receive the integrated circuit. The conductive ring may be a power ring or a ground ring. The conductive ring and the first set of bonding fingers are located within a first signal layer adjacent to the upper surface. A set of bonding pads which serve as device terminals reside within a second signal layer adjacent to a planar underside surface.
    Type: Grant
    Filed: January 13, 1998
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventor: Scott L. Kirkman
  • Patent number: 6065085
    Abstract: The method and apparatus provides a data processing system. The data processing system includes a primary bus, a secondary bus, and a host processor connected to the primary bus. The data processing system includes a first secondary processor connected to the primary bus and the secondary bus. Additionally, a second secondary processor is connected to the secondary bus. The first secondary processor and the second secondary processor forms cascaded processors for input/output functions. Selected functions normally performed by the second secondary processor are performed by the first secondary processor, wherein a division of workload increases performance of the data processing system. This architecture allows shifting of workload down to the secondary bus.
    Type: Grant
    Filed: January 27, 1998
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventors: Louis H. Odenwald, Jr., Steven R. Schremmer
  • Patent number: 6064220
    Abstract: Magnetic sensors are positioned adjacent a semiconductor integrated circuit under test while the circuit is subjected to selected electrical stimuli for purposes of failure analysis. The magnetic image data can be acquired from one or more selected locations about the circuit without any physical connection. By comparing the magnetic sensor information to a predetermined database of magnetic information acquired from known devices, failure modes can be identified. Conventional tester equipment can be used for providing the electrical stimuli to the device under test.
    Type: Grant
    Filed: July 29, 1997
    Date of Patent: May 16, 2000
    Assignee: LSI Logic Corporation
    Inventors: Emery Sugasawara, Stefan Graef
  • Patent number: 6061194
    Abstract: A storage device is described for reading data from a hard disk drive wherein delays due to rotational latency are substantially reduced. The storage device includes a platter having a substantially planar annular surface with a geometrical center. On the platter are a plurality of generally arcuate concentric tracks. Each of the tracks is divided into a plurality of sectors that are radially outwardly disposed from the geometrical center of the platter and are bounded by radii extending from the geometrical center. Original data is written on at least one of the sectors. Further, a copy of the original data is maintained at a fixed azimuth angle from the original data during rotation of the platter about the center.
    Type: Grant
    Filed: April 15, 1997
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventor: Wayne P. Bailey
  • Patent number: 6059422
    Abstract: A canopy luminaire (10, 110, 210) for mounting by a single individual in a canopy comprises a luminaire housing (12, 112, 212) having a bulbous body (14, 114) configured to receive the light-emitting section of a lamp and a narrow neck (16, 116). Spring clips (26, 124) are secured to opposing sides of the narrow neck (16, 116) and are adapted to support the luminaire (10, 110) from a canopy. A locking component (31) may be attached to the narrow neck (16, 116) to fixedly secure the luminaire (10,110, 210) to the canopy. The luminaire (10, 110, 210) may also include externally mounted control gear (80), such as the ballast. Further, the luminaire (10, 110, 210) may include a hingedly attached glass lens (42) to permit quick and easy replacement of lamps. Alternatively, luminaire (210) may include a rotatably attached glass lens (240).
    Type: Grant
    Filed: July 9, 1997
    Date of Patent: May 9, 2000
    Assignee: LSI Industries Inc.
    Inventors: Jerry F. Fischer, Robert E. Kaeser
  • Patent number: 6060370
    Abstract: A process for fabricating a trench filled with an insulating material in a surface of an integrated circuit substrate is described. One step of the process includes defining a masking layer on a composite layered stack above a region to be protected on the integrated circuit substrate surface. The composite layered stack includes a layer of a first material and a polishing stopping layer. The layer of the first material has a polishing rate by chemical mechanical polishing that is greater than a polishing rate by chemical mechanical polishing of the insulating material. Another step of the process includes etching through the composite layered stack and the integrated circuit substrate to form the trench in the integrated circuit substrate surface and depositing the insulating material on the integrated circuit substrate surface such that the trench is filled with the insulating material.
    Type: Grant
    Filed: June 16, 1998
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Shouli Steve Hsia, Yanhua Wang, Jayanthi Pallinti
  • Patent number: 6061806
    Abstract: A method and apparatus for maintaining automatic termination of a bus in the event of failure of a host computer are disclosed. The method includes the steps of (a) powering a first termination control circuit and a first terminating circuit of the first bus controller with the bus; (b) generating a first control signal (1) that is of an enable state if the first bus controller is located at an end of the bus, and (2) that is of a disable state if the first bus controller is located in a middle portion of the bus; (c) coupling the first terminating circuit to the bus if the first control signal is of the enable state; and (d) decoupling the first terminating circuit from the bus if the first control signal is of the disable state.
    Type: Grant
    Filed: May 12, 1997
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Barry E. Caldwell, Raymond S. Rowhuff, Kenneth J. Thompson
  • Patent number: 6061264
    Abstract: Provided are a self-aligned semiconductor fuse structure, a method of making such a fuse structure, and apparatuses incorporating such a fuse structure. The fuse break point, that point at which the electrical link of which the fuse is part is severed by a laser beam, is self-aligned by the use of photolithography and an anti-reflective coating. The self-alignment allows the size and location of the break point to be less sensitive to the laser beam size and alignment. This has several advantages, including allowing photolithographic control and effective size reduction of the laser spot irradiating the fuse material and surrounding structure. This permits reduced fuse pitch, increasing density and the efficiency of use of chip area, and results in reduced thermal exposure, which causes less damage to chip. In addition, laser alignment is less critical and therefore less time-consuming, which increases throughput in fabrication.
    Type: Grant
    Filed: July 17, 1998
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Gary K. Giust, Ruggero Castagnetti, Yauh-Ching Liu, Subramanian Ramesh
  • Patent number: 6061747
    Abstract: An improved transceiver pair that are tightly integrated into a computer system. The transceiver pair include a base transceiver and a remote transceiver, with a high speed serial connection between them. The base transceiver has a base transmitter with a parallel input port for accepting parallel, encoded data and a serial output port for transmitting a serial, encoded data stream. The remote transceiver has a receiver with a serial input port for receiving the serial, encoded data stream and an audio/video output port for passing deserialized data to an audio and video control unit after decoding. The high speed serial connection links the base serial output port to the remote serial input port. The remote receiver further includes a feedback input port adapted for receiving feedback data forwarded from a sensor. The sensor may respond to palpable, optical or sonic input or to physical contact.
    Type: Grant
    Filed: October 16, 1997
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Francois Ducaroir, Karl S. Nakamura, Michael O. Jenkins
  • Patent number: 6059637
    Abstract: Described is an improvement in a process wherein integrated circuit structures are formed on a front surface of a silicon substrate and at least one layer of copper is deposited on the front surface of the substrate to form a layer of copper interconnects, and wherein at least some copper is also deposited on the back surface of the substrate during this deposition. The improvement comprises: prior to the end of the formation of the integrated circuit structures, abrasively removing, from the backside of the substrate, copper deposited thereon during the deposition of copper on the front surface.
    Type: Grant
    Filed: December 15, 1997
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Nicholas F. Pasch, Joe W. Zhao
  • Patent number: 6060375
    Abstract: A crystalline semiconductor gate electrode having a re-entrant geometry and a process for making same are disclosed. The novel gate electrode may be formed from a polysilicon layer on a substrate by first implanting a masked polysilicon layer with a neutral species, i.e., a species which will not introduce a dopant into the polysilicon, such as a Group IV element, e.g., silicon, or a Group VIII element, e.g., argon. The neutral species is implanted into the masked polysilicon layer at an angle to provide a tapered implanted region which undercuts one side of the length (long dimension) of the mask. The substrate may then be rotated 180.degree. and then again implanted to provide a tapered implanted region which undercuts the opposite side of the length of the mask. When gate electrodes with such re-entrant geometry are to be formed on a substrate with their long axes at right angles to one another, i.e.
    Type: Grant
    Filed: July 31, 1996
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Jon Owyang, Sheldon Aronowitz, James P. Kimball
  • Patent number: 6061814
    Abstract: A test structure according to the present invention provides a technique for determining defects as a function of metal layers. The technique is implemented by dividing the test structure into individual test blocks that correspond to certain metal layers. In the disclosed embodiment, for example, a test structure formed by a semiconductor process utilizing three layers of interconnect metal includes three distinct test blocks having similar or identical underlying test logic. In a first test block, the underlying test logic is predominantly connected by the first metal layer. In a second test block, the underlying test logic is predominantly connected by the second metal layer. In a third test block, the underlying test logic is primarily connected by the third metal layer. During the testing stage, test patterns are applied to each test block and the results are tabulated.
    Type: Grant
    Filed: April 21, 1998
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Emery O. Sugasawara, V. Swamy Irrinki
  • Patent number: 6061655
    Abstract: An audio decoder is described that can concurrently produce two synchronized outputs of a digital audio stream at different sampling rates and can provide for seamless switching between the rates. In one embodiment, the audio decoder includes a first output buffer, an arithmetic logic unit (ALU), a second output buffer, and a control module. The first audio buffer is configured to buffer a sequence of digital audio samples and to provide the first sequence of digital audio samples to an output device at 96 kHz. The arithmetic logic unit (ALU) is coupled to the first output buffer to retrieve the first sequence of digital audio samples and to convert the first sequence of digital audio samples into a decimated sequence of digital audio samples. The second output buffer is coupled to the ALU to buffer the decimated sequence of digital audio and to provide the decimated sequence of digital audio samples to a second output device at 48 kHz.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Ning Xue, Takumi Nagasako
  • Patent number: 6060787
    Abstract: Provided is a method and composition for reducing the rate of, and rendering more uniform the oxidation of alignment mark trench side walls by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a nucleation layer of tungsten having an equiaxed grain structure with fine grain size and conformity is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. The fine grain size and equiaxed grain structure of this nucleation layer make it more resistant and more uniform in response to slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: May 9, 2000
    Assignee: LSI Logic Corporation
    Inventors: Joe W. Zhao, Shumay X. Dou, Keith K. Chao
  • Patent number: 6057848
    Abstract: A high order surface patch rendering system. A patch is rendered by subdividing a patch until the subpatches are sufficiently flat that they can be approximated by a quadrilateral, which can then be split diagonally and written to a rasterizer in the form of two triangles. In one embodiment, the patch rendering system receives rational coordinates (X,Y,Z,W) and attribute coordinates (color, opacity, texture) of control points of the Bezier surface patch. The patch rendering system divides and subdivides the surface patch by operating on the surface patch control points to produce subpatch control points. The rational coordinates of the control points are converted to spatial coordinates, and if the current subpatch is determined to be flat, the spatial coordinates and attributes of the subpatch corner points are provided to an output buffer in the form of triangle vertices with associated attributes.
    Type: Grant
    Filed: August 27, 1997
    Date of Patent: May 2, 2000
    Assignee: LSI Logic Corporation
    Inventor: Vineet Goel