Abstract: Provided are channel state information processing methods and apparatuses. The method includes: determining a target compression algorithm; compressing Channel State Information (CSI) using the target compression algorithm to obtain compressed CSI; and sending the compressed CSI to a network device.

Abstract: A wire includes: a core; and a shell that covers an outer periphery of the core, wherein the core includes silver, the shell includes 33.0 mass % or more and 37.0 mass % or less of nickel, 9.0 mass % or more and 10.5 mass % or less of molybdenum, 19.0 mass % or more and 21.0 mass % or less of chromium, 0.5 mass % or more and 1.2 mass % or less of titanium, and a remainder including cobalt and an inevitable impurity, a diameter of the wire is 100 ?m or less, and an elongation of the wire is 12% or more.

Abstract: Provided is a battery system, including a first battery pack including a first battery cell, a second battery pack including a second battery cell, a charger, and at least one processor configured to control the charger to sequentially perform constant current (CC) charging on the second battery pack and the first battery pack based on input power being identified, and control the charger to sequentially perform constant voltage (CV) charging on the second battery pack and the first battery pack based on the CC charging of the second battery pack and the first battery pack being completed, wherein a discharging performance of the first battery pack is greater than a discharging performance of the second battery pack, and wherein a charging performance of the second battery pack is greater than a charging performance of the first battery pack.

Abstract: A charge field-effect linear charger for charging a battery may include a charge pump configured to drive a field-effect transistor external to the charge field-effect linear charger and a variable output impedance for the charge pump, the variable output impedance depending on a mode of operation of the charge field-effect linear charger and an impedance of the field-effect transistor.

Abstract: Provided is a battery module assembly in which unit modules are stacked. Each of the unit modules includes: a plurality of battery cells; and a plurality of cartridge assemblies for respectively fixing the plurality of battery cells. The battery module assembly includes: a sensing assembly mounted to upper ends of the plurality of cartridge assemblies and assembled thereto; a front cover for covering front surfaces of the cartridge assemblies; and a connector coupled and fixed to the front cover. The connector includes: a connector body; and a first protrusion region that protrudes from the connector body. An upper sensing assembly connection hole is formed in an upper region of each of the cartridge assemblies.

Abstract: A battery module, and a battery pack and a vehicle including the same are disclosed. A battery module according to an embodiment of the present disclosure includes a plurality of battery cells; a case in which the plurality of battery cells are accommodated; a cover coupled to the case; at least one cooling block coupled to the cover and in contact with the case to cool the battery cell; and a cooling pipe coupled to the cooling block, wherein the cooling block has a variable coupling position in the cover.

Abstract: A battery module according to one embodiment of the present disclosure includes: a plurality of battery cells; a module casing that accommodates the plurality of battery cells, and having a first venting hole on one side surface, the first venting hole that discharges venting gas to outside; and a rupture member coupled to the module casing so as to cover the first venting hole from both sides, and that is at least partially ruptured by the venting gas.

Abstract: Provided are a semiconductor device, and/or an electronic device and a memory device both including the semiconductor device. The semiconductor device includes a lower electrode, an upper electrode spaced apart from the lower electrode, a channel layer between the lower electrode and the upper electrode, a gate insulating layer in the channel layer, an insertion layer provided between the channel layer and the gate insulating layer, and a gate electrode on the gate insulating layer. The channel layer has a vertical channel structure extending in a vertical direction from the lower electrode toward the upper electrode. The insertion layer may include a nitride of a metal and/or an oxynitride of a metal, and the metal may include one or more of niobium (Nb), vanadium (V), or tantalum (Ta).

Abstract: A nonvolatile memory device includes a plurality of cell strings each including a channel layer extending in a first direction, at least one charge tunneling layer adjacent to the channel layer in a second direction intersecting the first direction, a plurality of charge storage layers adjacent to the at least one charge tunneling layer in the second direction, the plurality of charge storage layers spaced apart in the first direction, a plurality of charge blocking layers adjacent to respective charge storage layers of the plurality of charge storage layers in the second direction, a plurality of gate electrodes adjacent to respective charge blocking layers of the plurality of charge blocking layers in the second direction, and a plurality of separation layers configured to isolate the plurality of charge storage layers, the plurality of charge blocking layers, and the plurality of gate electrodes in the first direction.

Abstract: Provided are a semiconductor structure including high kappa (high-K) material for source/drain (S/D) and/or thermal heat spreader and a method of forming the same. The semiconductor device includes a substrate, a plurality of channel layers stacked over the substrate, a gate structure wrapping the plurality of channel layers, and source/drain (S/D) regions disposed over the substrate at opposite sides of the gate structure and connecting the plurality of channel layers. A material of the S/D regions includes a high thermal conductivity material with a single crystal structure, such as boron arsenide (BAs) with a thermal conductivity greater than 1000 W/mK. In this case, the high thermal conductivity material can efficiently dissipate the heat generated by the semiconductor structure to enhance the yield and the reliability of the semiconductor structure.

Abstract: An uplink full-power transmission method and a device. The method is applied to a terminal device and includes: performing uplink transmission based on an uplink transmit power obtained through scaling by a power scaling coefficient, where the power scaling coefficient is determined based on a power control factor, and the power control factor includes at least one of the following: an uplink full-power transmission capability of the terminal device, a supported transmission precoding matrix indicator TPMI reported by the terminal device, a TPMI delivered by a network device, a working mode reported by the terminal device, or the number of antenna ports for each SRS resource in a sounding reference signal SRS resource set that is configured by the network device based on the working mode.

Abstract: A method of configuring a multiple Access Points (M-AP) set includes transmitting, by an access point (AP) initiating a new M-AP set, an information element including a plurality of octets. One of the plurality of octets indicates the presence of an extended capabilities octet of the plurality of octets. A bit of the extended capabilities octet indicates if an M-AP Coordinated Transmissions (CT) Basic Service Set (BSS) is enabled for this AP. A method of establishing a multiple Access Points (M-AP) set between APs includes transmitting, by a first AP, a first message advertising an M-AP Coordinated Transmission (CT) Basic Service Set (BSS), receiving, by the first AP, from a second AP, a second message advertising a second M-AP CT BSS, and initiate peering, in response to receiving the first message or the second message, used by an M-AP set including the first AP and the second AP.

Abstract: A display device includes a display element layer on a substrate. The display element layer includes an anode electrode, a cathode electrode, an overcoat pattern, a light emitting element including first and second element electrodes, an anode transparent electrode electrically connecting the first and second element electrodes to each other, and a cathode transparent electrode that electrically connects the second element electrode and the cathode electrode to each other. The cathode transparent electrode includes a line electrode extending in a second direction intersecting a first direction, and a branch electrode extending in the first direction from the line electrode. The first and second element electrodes are spaced apart from each other at a first distance in the first direction, and the anode transparent electrode and the branch electrode are spaced apart from each other at a second distance greater than or equal to the first distance in the first direction.

Abstract: A display device includes a display element layer disposed on a substrate, and the display element layer includes an anode electrode and a cathode electrode, a first reflective electrode disposed on the anode electrode, a second reflective electrode disposed on the cathode electrode, a light emitting element including a first bonding electrode and a second bonding electrode, a first organic layer disposed on the light emitting element and disposed between the anode electrode and the cathode electrode in a plan view, a first transparent electrode directly electrically connecting the first reflective electrode and the first bonding electrode, and a second transparent electrode directly electrically connecting the second reflective electrode and the second bonding electrode.

Abstract: The present disclosure discloses a light emitting module including at least one light emitting device, the light emitting device comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

Abstract: An organic electroluminescence device includes an anode, a cathode, and an emitting layer, in which the emitting layer contains a delayed fluorescent compound M2 represented by a formula (1), and the compound M2 has at least one deuterium atom in a molecule. In the formula (1), CN is a cyano group, D11 and D12 are each independently a group represented by a formula (11), (12) or (13), at least one D11 is a group represented by the formula (12) or (13), and R is a hydrogen atom, an aryl group, etc.

Abstract: Disclosed is a display panel. The display panel includes a substrate, a first electrode layer, a pixel defining layer, a light-emitting layer, a second electrode layer, and a peripheral conductive structure. When the light-emitting layer is formed through an ink-jet printing process, an organic solution may be printed into auxiliary dummy openings in an initial printing phase, and then printed into effective pixel openings after printing becomes stable.

Abstract: Disclosed is a display panel including a first light emitting element including a first anode, a first cathode, and a first intermediate layer disposed between the first anode and the first cathode, a second light emitting element including a second cathode, a second anode, and a second intermediate layer disposed between the second cathode and the second anode, a first transistor, a second transistor, a connection wiring line, and a pixel defining film, and the second cathode includes an end portion connected to a light emitting connection part and another end portion spaced apart from the end portion on a cross section.

Abstract: A mechanical extending mechanism includes a first connecting member, a second connecting member, a third connecting member, a fourth connecting member, a fifth connecting member and a sixth connecting member. The first connecting member is provided with a first rotating portion, the third connecting member is provided with a second rotating portion, and the first rotating portion is rotatably connected to the second rotating portion.

Abstract: A cooking appliance includes a housing having a base portion defining a base cavity and an open top end of the base cavity, a top portion alterable relative to the base portion between an open state and a closed state, and a base locking mechanism coupled to the base portion of the housing. The cooking appliance further includes a first cooking plate removably coupled to the base portion of the housing to close the open top end of the base cavity. The cooking plate defines a first engagement feature and is configured to be locked to the housing via engagement between the base locking mechanism of the base portion and the first engagement feature. The base locking mechanism is alterable into an unlocked state to allow the first cooking plate to be detached from the housing.