Abstract: A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

Abstract: An optical chip may include a vertical-cavity surface-emitting laser (VCSEL) structure. The optical chip may include a capacitor over at least a portion of an active layer of the VCSEL structure that is outside of an active region of the VCSEL structure. The capacitor may include a first metal layer over the portion of the active layer, a dielectric layer on the first metal layer, and a second metal layer on the dielectric layer. The optical chip may include an isolation region between a substrate of the VCSEL and a portion of the capacitor outside of the VCSEL.

Abstract: A heat sink assembly may include an alignment body with an opening configured to receive a crystal rod, wherein the opening is configured to maintain a crystalline orientation of the crystal rod relative to a physical orientation of the alignment body. The heat sink assembly may include a first cooling stack, wherein the first cooling stack includes a first cutout to receive the crystal rod and the alignment body. The heat sink assembly may include a second cooling stack, wherein the second cooling stack includes a second cutout to receive the crystal rod and the alignment body, and wherein the first cooling stack and the second cooling stack are configured to mate and at least partially sandwich the crystal rod and the alignment body.

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

Abstract: A method and system for forming a photonic device. A photonic device may include a substrate, a cladding layer disposed on the substrate, an electrical device region formed within the cladding layer, the electrical device region having a plurality of electrical device component layers that include at least one metal layer, and a grating region formed within the cladding layer, the grating region including a grating coupler and the at least one metal layer. The at least one metal layer is deposited simultaneously in the electrical device and grating regions and is used in the grating region to reflect light emitted from the grating coupler.

Abstract: In some implementations, an optical fiber may include a core and a cladding surrounding the core. The core and the cladding may provide light guidance along the optical fiber in a light propagation direction. The core may have a taper in the light propagation direction in a section of the optical fiber. A diameter of the core may decrease independently of a diameter of the cladding in the section of the optical fiber.

Abstract: A VCSEL/VECSEL array design is disclosed that results in arrays that can be directly soldered to a PCB using conventional surface-mount assembly and soldering techniques for mass production. The completed VCSEL array does not need a separate package and no precision sub-mount and flip-chip bonding processes are required. The design allows for on-wafer probing of the completed arrays prior to singulation of the die from the wafer. Embodiments relate to semiconductor devices, and more particularly to multibeam arrays of semiconductor lasers for high power and high frequency applications and methods of making and using the same.

Abstract: A dot projector may include a vertical-cavity surface-emitting laser (VCSEL). The dot projector may include one or more collimating elements to collimate light emitted by the VCSEL. An effective focal length of the one or more collimating elements may be larger than an optics length of the dot projector. The dot projector may include an optical element including a periodic optical phase function to replicate the light after collimation by the one or more collimating elements and an aberration-correcting phase function to correct spot aberrations in a dot pattern resulting from the tiling or splitting of the light.

Abstract: In some implementations, an electro-optic modulator may include a waveguide to propagate an optical signal in a direction of propagation. The electro-optic modulator may include a signal electrode, associated with the waveguides, to modulate the optical signal. The signal electrode may include a base structure. The signal electrode may include a loading line structure comprising one or more segments, where a segment, of the one or more segments, connects to the base structure via a plurality of electrically-conductive bridges.

Abstract: In some implementations, an electrical drive circuit may include a first optical load terminal to receive an anode of a first optical load. The electrical drive circuit may include a junction section that includes a first electrical junction and a second optical load terminal to receive a cathode of the first optical load and an anode of a second optical load. The electrical drive circuit may include a third optical load terminal to receive a cathode of the second optical load; a first switch connected between the third optical load terminal and a common ground; a coupling capacitor connected between the first electrical junction and a second electrical junction; a second switch connected between the second electrical junction and the common ground; and an inductor connected from a second branch of the second electrical junction and between the second electrical junction and the common ground.

Abstract: An optical device may include a substrate including a conductive core, a first layer stack on a first surface of the conductive core, a conductor-filled trench extending through the first layer stack to the conductive core such that the conductor-filled trench is on the first surface of the conductive core, and a second layer stack on a second surface of the conductive core. The optical device may include a vertical-cavity surface-emitting laser (VCSEL) chip above the conductor-filled trench. The VCSEL chip may include an array of VCSELs. A size of the conductor-filled trench may match a size of the VCSEL chip, match a size of an emission region of the array of VCSELs, or be greater than the size of the emission region of the array of VCSELs and less than the size of the VCSEL chip.

Abstract: An optical device may include an outer box. The optical device may include an inner box within the outer box. The optical device may include a heating element on a surface of the inner box. The heating element may include one or more openings. The optical device may include one or more mounting pads. A mounting pad of the one or more mounting pads may be arranged in an opening of the one or more openings and mechanically couple the inner box to the outer box through the opening.

Abstract: An optical device may include a laser component to emit a source beam and an optical component to split the source beam to generate a first beam and a second beam. The optical device may include a multiplexing component to multiplex the first beam and the second beam to form a first multiplexed beam, an optical system to receive the first multiplexed beam and demultiplex the first beam and the second beam, and a scanning component to scan a field of view with the first beam and the second beam and receive the first beam and the second beam reflected from the field of view. The optical system may multiplex the first beam and the second beam reflected from the field of view to form a second multiplexed beam, and a demultiplexing component may demultiplex the first beam and the second beam reflected from the field of view.

Abstract: In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.

Abstract: The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 ?m or more.

Abstract: A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) chip may include a VCSEL array including plurality of VCSELs and an integrated optical element including a plurality of lens segments. The integrated optical element may direct beams provided by the plurality of VCSELs to a particular range of angles to create a diffusion pattern using the beams provided by the plurality of VCSELs. A surface of a first lens segment may be sloped to cause a beam from a first VCSEL to be steered at a first angle and a surface of a second (adjacent) lens segment may be sloped to cause a beam from a second VCSEL to be steered at a second angle. A direction of the second angle with respect to a surface of the VCSEL array may be opposite to a direction of the first angle with respect to the surface of the VCSEL array.

Abstract: A vertical cavity surface emitting laser (VCSEL) may include a substrate layer, epitaxial layers on the substrate layer, and angled reflectors configured to receive an optical beam emitted toward a bottom surface of the VCSEL and redirect the optical beam through an exit window in a top surface of the VCSEL. In some implementations, the angled reflectors may be formed in the substrate layer. Additionally, or alternatively, the VCSEL may include molded optics, where the molded optics include the angled reflectors. In some implementations, the exit window may include an integrated lens.

Abstract: A micro-electro-mechanical system (MEMS) device includes a mirror; at least one hinge; an electrostatic comb structure; and a control device. The control device causes, for a period of time, a voltage to be supplied to the electrostatic comb structure to cause the electrostatic comb structure to tilt the mirror about the at least one hinge in a particular direction. The control device causes, after the period of time and at an instant of time, the voltage to cease being supplied to the electrostatic comb structure. A tilt angle of the mirror, at the first instant of time, is less than a maximum tilt angle of the mirror in the particular direction. An angular momentum of the mirror, at the instant of time, is greater than zero kilogram meters squared per second in the particular direction.

Abstract: An optical device may comprise a laser configured to generate an optical beam and a Mach-Zehnder Interferometer (MZI) configured to amplify the optical beam. The MZI may comprise a first coupler and a second coupler connected via a plurality of arms of the MZI. An arm, of the plurality of arms, may provide an optical path for part of the optical beam and may comprise a semiconductor optical amplifier (SOA) configured to amplify the part of the optical beam and a phase shifter configured to adjust a phase of the part of the optical beam.

Abstract: In some implementations, an electrical drive circuit may generate a rectangular optical pulse using cathode pre-charge and cathode-pull compensation. The electrical drive circuit may include an anode and a cathode to connect an optical load, a switch, a first source connected between the anode and a ground, a rectifier connected between the cathode and the switch, a capacitor connected in parallel with the rectifier, a second source connected to the ground, and an inductor connected between the switch and the second source. In some implementations, when the switch is closed and the optical load is connected, a first current is provided to the optical load through the first source, the rectifier, and the switch, and a second current is provided to the optical load through the first source, the capacitor, and the switch, where a rise time of the first current complements a fall time of the second current.