Abstract: Tunable LED lighting systems, devices and methods are described herein. A light emitting device includes at least a first phosphor-converted LED configured to emit light having a desaturated orange color point characterized by CIE 1976 color coordinates 0.3<u?<0.35 and v?>0.52 and at least a second phosphor-converted LED configured to emit light having a cyan color point characterized by CIE 1976 color coordinates 0.15<u?<0.20 and 0.47<v?<0.52. The first phosphor-converted LED and the second phosphor-converted LED are arranged to combine the light emitted by the first phosphor-converted LED with the light emitted by the second phosphor-converted LED to provide a white light output from the light emitting device.

Abstract: Described herein is a method and system for dual stretching of wafers to create isolated segmented chip scale packages. A wafer having an array of light-emitting diodes (LEDs) is scribed into LED segments, where each LED segment includes a predetermined number of LEDs. The scribed wafer is placed on a stretchable substrate or tape. The tape is stretched and a layer of optically material is placed in the separation gaps. The stretched wafer is scribed on a LED level. The tape is stretched and another layer of optically opaque material is placed in the separation gaps. The same or different optically opaque material can be used for the layers. The two layers of optically opaque material are formed to provide electrical connectivity between the LEDs in each LED segment. In an implementation, each segment or LED is individually addressable.

Abstract: The invention describes a light conversion device comprising: a light converter, wherein the light converter is adapted to convert primary light to converted light, wherein a peak emission wavelength of the converted light is in a longer wavelength range than a peak emission wavelength of the primary light, a reflective structure attached to at least a part of a front surface of the light converter, wherein the front surface defines a light emission surface of the light conversion device, wherein the reflective structure is arranged to reflect a defined part of the converted light, wherein the defined part of the converted light is characterized by a wavelength above a threshold wavelength, and wherein the light conversion device is arranged to emit at least a part of the defined part of the converted light via the light emission surface such that a color point of light emitted via the light emission surface is shifted to a longer wavelength range than obtained without emission of such part.

Abstract: A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

Abstract: An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Abstract: The invention describes a method of manufacturing an LED lighting assembly, which method comprises the steps of preparing a flexible carrier for a number of light-emitting diodes; mounting the light-emitting diodes onto the flexible carrier; providing a flexible shaping element made of a material that can be bent into a desired shape or form and incorporating a heat spreader; and winding the flexible carrier about the flexible shaping element in a helical manner. The invention further describes such an LED lighting assembly, and an LED lighting unit comprising such an LED lighting assembly.

Abstract: Systems, devices, and methods are disclosed in which one or more light sources, a detector, a processor and a controller are configured such that light from the one or more light sources improves the ability of a human or automated motor vehicle driver to identify and avoid pedestrians. The one or more light sources may provide spot illumination to moving objects or pedestrians on a road surface, with the spot illumination following the moving object or pedestrians along the portion of the road surface. The one or more light sources may project images on the ground or on other surfaces. The light source may be carried by a pedestrian or on personal transport used by a pedestrian. The light sources may be stationary and provide lighting for a pedestrian street crossing.

Abstract: A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

Abstract: A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

Abstract: An LED structure includes an epi layer grown on a substrate and a plurality of dielectric nanoantennas positioned within the epi layer. The dielectric antennas can be periodically arranged to reduce reabsorption of light and redirect oblique incident light to improve overall light coupling efficiency. Each of the dielectric nanoantennas can have a top, a bottom, a height less than 1000 nm and greater than 200 nm and a diameter less than 2000 nm and greater than 300 nm.

Abstract: A light emitting device comprises a plurality of coherent light sources, and a plurality of light scattering structures. Each light scattering structure is located in an optical path for light output from a different corresponding one of the coherent light sources. Each light scattering structure comprises an arrangement of nanoantennas embedded in an electrically responsive material and electrical contacts by which to apply a voltage to the electrically responsive material. Application of a time varying electrical signal causes the refractive index of the electrically responsive material in a light scattering structure to vary and thereby varies light scattering by the nanoantennas in the light scattering structure. This effect may be used to reduce speckle caused by interference of light output by the coherent light sources.

Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.

Abstract: A wavelength converting layer is disclosed that includes a plurality of phosphor grains 50-500 nm in size and encapsulated in cerium free YAG shells and a binder material binding the plurality of phosphor grains, the wavelength converting layer having a thickness of 5-20 microns attached to the light emitting surface.

Abstract: A coated luminescent particle 100, a luminescent converter element, a light source, a luminaire and a method of manufacturing coating luminescent particles are provided. The coated luminescent particle 100 comprises a luminescent particle 102, a first coating layer 104 and a second coating layer 106. The luminescent particle 102 comprises luminescent material for absorbing light in a first spectral range and for converting the absorbed light towards light of a second spectral range. The luminescent material is sensitive for water. The first coating layer 104 forms a first barrier for water and comprises a metal oxide or a nitride, phosphide, sulfide based coating. The second coating layer 106 forms a second barrier for water and comprises a silicon based polymer or comprises a continuous layer of one of the materials AlPO4, SiO2, Al2O3, and LaPO4. The first coating layer 104 and the second coating layer 106 are light transmitting.

Abstract: An optical isolation material may be applied to walls of a first cavity and a second cavity in a wafer mesh. A wavelength converting layer may be deposited into the first cavity to create a first segment and into the second cavity to create a second segment. The first segment may be attached to a first light emitting device to create a first pixel and the second segment to a second light emitting device to create a second pixel. The wafer mesh may be removed.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: A control circuit for a light emitting diode (LED) lighting system for achieving a dim-to-warm effect is provided. The control circuit includes an LED controller, a clamp circuit coupled to a set of warm correlated-color-temperature (“CCT”) LEDs, a switch coupled to a set of cool LEDs, and a feedback circuit coupled to the clamp and the switch. The LED controller is configured to control the clamp circuit to clamp current through the set of warm LEDs based on the input current, and control the switch to switch on the set of cool LEDs responsive to the input current being greater than a first threshold level and to switch off the set of cool LEDs responsive to the input current being lower than the first threshold level. The feedback circuit is configured to divert current from the set of warm LEDs to the set of cool LEDs.

Abstract: A light engine and system are disclosed in which the light engine contains a core comprising an opening extending through opposing surfaces and a flexible printed circuit board (PCB). The PCB includes a flexible body disposed on an outside of the core and having independently addressable sets of illumination sources mounted thereto, and flexible legs extending from the body and through the opening. The legs are bent such that a terminal portion of each leg is substantially parallel to the opposing surfaces of the core. Independent control of the sets of illumination sources is provided via the legs. The body is separated into segments, each on a different section of the outside and containing body contacts electrically independent of the body contacts of each other segment. Each leg is associated with a different segment, and contains leg contacts on the terminal portion in electrical contact with the associated body contacts.

Abstract: The invention describes a semiconductor die comprising at least a first light-emitting diode and a second light-emitting diode, wherein the first light-emitting diode comprises a first diode formed in a first die area and a first phosphor layer deposited over the first die area; the second light-emitting diode comprises a second diode and a second phosphor layer deposited over the second die area; the first diode and the second diode are electrically connected in anti-parallel; and wherein the optical properties of the second phosphor layer differ from the optical properties of the first phosphor layer.